scholarly journals Effect of Sputtering Oxygen Partial Pressure on the Praseodymium-Doped InZnO Thin Film Transistor Using Microwave Photoconductivity Decay Method

Micromachines ◽  
2021 ◽  
Vol 12 (9) ◽  
pp. 1044
Author(s):  
Huansong Tang ◽  
Kuankuan Lu ◽  
Zhuohui Xu ◽  
Honglong Ning ◽  
Dengming Yao ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
High Performance ◽  
Thin Film Transistor ◽  
Preparation Process ◽  
Defect States ◽  
Photoconductivity Decay ◽  
New Generation

The praseodymium-doped indium-zinc-oxide (PrIZO) thin film transistor (TFT) shows broad application prospects in the new generation of display technologies due to its high performance and high stability. However, traditional device performance evaluation methods need to be carried out after the end of the entire preparation process, which leads to the high-performance device preparation process that takes a lot of time and costs. Therefore, there is a lack of effective methods to optimize the device preparation process. In this paper, the effect of sputtering oxygen partial pressure on the properties of PrIZO thin film was studied, and the quality of PrIZO thin film was quickly evaluated by the microwave photoconductivity decay (µ-PCD) method. The μ-PCD results show that as the oxygen partial pressure increases, the peak first increases and then decreases, while the D value shows the opposite trend. The quality of PrIZO thin film prepared under 10% oxygen partial pressure is optimal due to its low localized defect states. The electric performance of PrIZO TFTs prepared under different oxygen partial pressures is consistent with the μ-PCD results. The optimal PrIZO TFT prepared under 10% oxygen partial pressure exhibits good electric performance with a threshold voltage (Vth) of 1.9 V, a mobility (µsat) of 24.4 cm2·V−1·s−1, an Ion/Ioff ratio of 2.03 × 107, and a subthreshold swing (SS) of 0.14 V·dec−1.

scholarly journals The Investigation of Indium-Free Amorphous Zn-Al-Sn-O Thin Film Transistor Prepared by Magnetron Sputtering

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 585
Author(s):  
Mingyu Zhang ◽  
Kuankuan Lu ◽  
Zhuohui Xu ◽  
Honglong Ning ◽  
Xiaochen Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Localized States ◽  
Oxide Semiconductor ◽  
High Definition ◽  
Force Microscopy ◽  
Amorphous Oxide Semiconductor ◽  
Photoconductivity Decay ◽  
Output Characteristics ◽  
New Generation

The indium-free amorphous oxide semiconductor thin film transistor (AOS-TFT) with aluminum (Al) electrodes shows broad application prospects in new-generation display technologies, such as ultra-high definition large-screen display, OLED display and 3D display. In this work, the thin film transistor (TFT) with a zinc-aluminum-tin-oxide (ZATO) semiconductor as the active layer and an Al electrodes as the source and drain (S/D) was investigated. The optical, electrical and semiconductive properties of the ZATO films were evaluated by atomic force microscopy (AFM), ultraviolet–visible spectrophotometry and microwave photoconductivity decay (μ-PCD), respectively. The result shows that the film is smooth and transparent and has low localized states and defects at a moderate oxygen concentration (~5%) and a low sputtering gas pressure (~3 mTorr). After the analysis of the transfer and output characteristics, it can be concluded that the device exhibits an optimal performance at the 623 K annealing temperature with an Ion/Ioff ratio of 5.5 × 107, an SS value of 0.15 V/decade and a saturation mobility (μsat) of 3.73 cm2·V−1·s−1. The ZATO TFT at the 623 K annealing has a −8.01 V negative shift under the −20 V NBS and a 2.66 V positive shift under the 20 V PBS.

Effect of oxygen partial pressure on the performance of indium gallium zinc oxide thin film transistor

2016 ◽  
Vol 31 (6) ◽  
pp. 558-562
Author(s):  
孙建明 SUN Jian-ming ◽  
周婷婷 ZHOU Ting-ting ◽  
任庆荣 REN Qing-rong ◽  
胡合合 HU He-he ◽  
陈 宁 CHEN Ning ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium ◽  
Effect Of Oxygen

Minimizing Residual Images of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistor-Based Flexible Organic Light-Emitting Diode Displays by Controlling Oxygen Partial Pressure

2020 ◽  
Vol 20 (11) ◽  
pp. 6916-6919
Author(s):  
Do Young Won ◽  
Hyun Min Kim ◽  
Yun Ju Oh ◽  
Manh-Cuong Nguyen ◽  
Rino Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Light Emitting Diode ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Light Emitting ◽  
Organic Light Emitting Diode

Plastic organic light emitting diode displays suffer from residual image, which is closely connected with the hysteresis of the driving thin-film transistor in the pixels. Therefore, in researching paper, we manufactured an OLED display comprise a polyimide substrate and an amorphous indium gallium zinc oxide thin film transistor active layer. Paper proposed a solution for reducing hysteresis through oxygen partial pressure control and evaluated it using hysteresis analysis. The results showed that hysteresis is strongly dependent on the threshold voltage is settled by the oxygen partial pressure while active layer deposition of the TFT. Moreover, hysteresis decreases with increasing temperature.

Improvement in the Electrical Performance of Ge-Doped InZnO Thin-Film Transistor

2015 ◽  
Vol 15 (10) ◽  
pp. 7537-7541 ◽  
Author(s):  
Yong Jin Im ◽  
Sang Jo Kim ◽  
Ji Hun Shin ◽  
Seung Soo Ha ◽  
Chan Hee Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Thin Film Transistor ◽  
Processing Parameters ◽  
Binding Energies ◽  
Oxide Semiconductor ◽  
Electrical Performance ◽  
Sputtering Power

We fabricated amorphous oxide semiconductor thin-film transistors (TFTs) using Ge-doped InZnO (Ge–IZO) thin films as active-channel layers. The Ge–IZO thin films were deposited at room temperature by radio-frequency (RF) magnetron co-sputtering system, and then annealed in air for 1 h at 300 °C. Some processing parameters such as sputtering oxygen partial pressure [O2/(Ar + O2)] and sputtering power for GeO2 target were changed to investigate what was the optimal amount of Ge in the Ge–IZO active layer. A small concentration of Ge added to IZO by co-sputtering enhanced the carrier concentration, mobility, and conductivity; but further increase in Ge concentration degraded the device performance. In order to optimize the electrical properties of Ge–IZO TFTs, we tried to adjust the processing parameters and the best Ge–IZO TFT was obtained at a co-sputtering oxygen partial pressure of 2% and GeO2 target power of 10 W. The fabricated Ge–IZO TFT exhibited an on/off ratio of 3.0×107, a saturation mobility of 13.05 cm2/V · s, a subthreshold swing of 0.95 V/dec, and a threshold voltage of 0 V. XPS and XRD analyses of Ge–IZO films were performed to investigate the binding energies of atoms in Ge–IZO films and the crystallinity of the films. 90% transmittance of visible light was achieved, which makes the technology useful for transparent devices.

Selenophene-containing Semiconducting Polymers for High-performance Ambipolar Thin Film Transistor Application

Polymer ◽  
2021 ◽  
pp. 123685
Author(s):  
Yanjun Guo ◽  
Mingchao Xiao ◽  
Xi Zhang ◽  
Jiayao Duan ◽  
Shengyu Cong ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Thin Film Transistor ◽  
Semiconducting Polymers
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