scholarly journals Morphological Study of Nanostructures Induced by Direct Femtosecond Laser Ablation on Diamond

Micromachines ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 583
Author(s):  
Ahmed Abdelmalek ◽  
Argyro N. Giakoumaki ◽  
Vibhav Bharadwaj ◽  
Belén Sotillo ◽  
Thien Le Phu ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
High Spatial Frequency ◽  
Femtosecond Laser Ablation ◽  
Pulse Number ◽  
Diamond Surface ◽  
Force Microscopy ◽  
Periodic Surface Structure ◽  
Frequency Laser ◽  
Thermal Melting ◽  
The Impact

High spatial frequency laser induced periodic surface structure (HSFL) morphology induced by femtosecond laser with 230 fs pulse duration, 250 kHz repetition rate at 1030 nm wavelength on CVD diamond surface is investigated and discussed. The spatial modification was characterized and analyzed by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM) and 2D-Fast Fourier Transform (2D-FFT). We studied the effect of pulse number and laser power on the spatial development of nanostructures, and also deduced the impact of thermal accumulation effect on their morphology. A generalized plasmonic model has been used to follow the optical evolution of the irradiated surface and to determine the periodic value of the nanostructures. We suggest that non-thermal melting and plasmonic excitation are the main processes responsible for the formation of HSFL-type nanostructures.

Spot size and pulse number dependence of femtosecond laser ablation thresholds of silicon and stainless steel

2017 ◽  
Vol 396 ◽  
pp. 1736-1740 ◽  
Author(s):  
Oskar Armbruster ◽  
Aida Naghilou ◽  
Markus Kitzler ◽  
Wolfgang Kautek
Keyword(s):  
Stainless Steel ◽  
Laser Ablation ◽  
Femtosecond Laser ◽  
Femtosecond Laser Ablation ◽  
Spot Size ◽  
Pulse Number

scholarly journals High spatial frequency laser induced periodic surface structure formation in germanium by mid-IR femtosecond pulses

2016 ◽  
Vol 120 (14) ◽  
pp. 143103 ◽  
Author(s):  
Drake. R. Austin ◽  
Kyle R. P. Kafka ◽  
Yu Hang Lai ◽  
Zhou Wang ◽  
Kaikai Zhang ◽  
...  
Keyword(s):  
Spatial Frequency ◽  
Surface Structure ◽  
Structure Formation ◽  
High Spatial Frequency ◽  
Femtosecond Pulses ◽  
Periodic Surface ◽  
Periodic Surface Structure ◽  
Frequency Laser

Rapid Microfluidc Biochips Fabrication by Femtosecond Laser on Glass Substrate

2011 ◽  
Vol 483 ◽  
pp. 359-363
Author(s):  
Chin Lung Chang ◽  
Weij Hong Ju ◽  
Ching Liang Liou ◽  
Jik Chang Leong ◽  
Lung Ming Fu
Keyword(s):  
Femtosecond Laser ◽  
Glass Substrate ◽  
Measurement Techniques ◽  
Computer Software ◽  
Femtosecond Laser Ablation ◽  
Microfluidic Chips ◽  
Direct Writing ◽  
Force Microscopy ◽  
Smooth Channel ◽  
Microfluidic Biochips

This paper uses a femtosecond laser scriber to perform the direct-writing ablation of glass substrate for the development of microfluidic biochips. The surface quality of the ablated microchannels was examined by scanning electron microscopy (SEM) and atomic force microscopy (AFM) measurement techniques. The developed femtosecond laser ablation system provides a versatile and economic approach for the fabrication of glass-base microfluidic chips. In the laser writing process, the desired microfluidic patterns are designed using commercial computer software and are then transferred to the laser scriber to ablate the trenches. The results show that a very smooth channel wall can be achieved through the annealing process at the temperature 650°C and 5 hours. The system provides an economic and powerful means of rapid glass microfluidic biochips development.

Femtosecond Laser Ablation of a Single Crystal Superalloy CMSX-4 in Different Environments

2007 ◽  
Vol 546-549 ◽  
pp. 1309-1312 ◽  
Author(s):  
Quan Wen ◽  
Qiang Feng ◽  
Guang Hua Cheng ◽  
Wei Zhao ◽  
Zu Qing Sun
Keyword(s):  
Laser Ablation ◽  
Femtosecond Laser ◽  
Single Crystal ◽  
Laser System ◽  
Femtosecond Laser Ablation ◽  
Pulse Number ◽  
Single Crystal Superalloy ◽  
Titanium:Sapphire Laser ◽  
Argon Gas

The femtosecond laser ablation has been investigated on second generation single crystal superalloy CMSX-4 using a commercial titanium:sapphire laser system (λ = 780nm, τ = 120 fs). The ablation thresholds of bulk alloy CMSX-4 have been determined as a function of the pulse number (1, 10, 100, 1000) in air, argon gas and vacuum. The results indicate that the multiple-pulse threshold of this material decreased with increasing the pulse number in all the cases. For the same pulse number, the threshold changed in the descending order: air, vacuum and argon gas. The incubation coefficient in air has been determined: ξ = 0.86 ± 0.03. The preliminary results showed the better quality of femtosecond laser machining of CMSX-4 in vacuum and argon gas than in air.

scholarly journals Structure-Mediated Excitation of Air Plasma and Silicon Plasma Expansion in Femtosecond Laser Pulses Ablation

Research ◽  
2018 ◽  
Vol 2018 ◽  
pp. 1-11 ◽  
Author(s):  
Qingsong Wang ◽  
Lan Jiang ◽  
Jingya Sun ◽  
Changji Pan ◽  
Weina Han ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Femtosecond Laser Ablation ◽  
Longitudinal Direction ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Pulse Number ◽  
Air Plasma ◽  
Laser Material ◽  
Anisotropic Expansion ◽  
Multiple Pulses

Femtosecond laser-induced surface structures upon multiple pulses irradiation are strongly correlated with the pulse number, which in turn significantly affects successive laser-material interactions. By recording the dynamics of femtosecond laser ablation of silicon using time-resolved shadowgraphy, here we present direct visualization of the excitation of air plasma induced by the reflected laser during the second pulse irradiation. The interaction of the air plasma and silicon plasma is found to enhance the shockwave expansion induced by silicon ablation in the longitudinal direction, showing anisotropic expansion dynamics in different directions. We further demonstrate the vanishing of air plasma as the pulse number increases because of the generation of a rough surface without light focusing ability. In the scenario, the interaction of air plasma and silicon plasma disappears; the expansion of the silicon plasma and shockwave restores its original characteristic that is dominated by the laser-material coupling. The results show that the excitation of air plasma and the laser-material coupling involved in laser-induced plasma and shockwave expansion are structure mediated and dependent on the pulse number, which is of fundamental importance for deep insight into the nature of laser-material interactions during multiple pulses ablation.

SUBWAVELENGTH PERIODIC RIPPLE FORMATION ON GaN SURFACE BY FEMTOSECOND LASER PULSES

2005 ◽  
Vol 12 (04) ◽  
pp. 651-657 ◽  
Author(s):  
X. C. WANG ◽  
G. C. LIM ◽  
F. L. NG ◽  
W. LIU ◽  
S. J. CHUA
Keyword(s):  
Femtosecond Laser ◽  
Laser Beam ◽  
Defect Density ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Pulse Number ◽  
Process Window ◽  
Incident Laser ◽  
Ripple Formation ◽  
Periodic Surface Structure

The formation of femtosecond pulsed laser-induced periodic surface structure on GaN is reported for the first time (to our knowledge) in this paper. It has been found that the formation of the laser-induced ripples is very much dependent and quite sensitive to the laser conditions of the incident laser beam energy fluence and pulse numbers. Possibly due to the unique property of high-defect density of GaN material, the process window for laser-induced ripple formation is quite narrow compared to other materials such as InP , GaP , Al 2 O 3 etc. Nevertheless, through finely adjusting laser beam fluence and pulse number, subwavelength periodic ripples could be formed on the GaN surface. The formation of such periodic two-dimensional structures was attributed to optical interference of the incident laser light with scattered waves from a surface disturbance. Photoluminescence emission could still be detected on the GaN ripple area, indicating little degradation of GaN optical property after femtosecond laser processing. The femtosecond laser-induced ripple structure has potential applications in the fabrication of nanostructures for the GaN -based devices.

Single Femtosecond Laser Pulse Irradiation of Silicon on Different Crystallographic Facet Planes

2011 ◽  
Vol 314-316 ◽  
pp. 1885-1888
Author(s):  
Li Tao Qi
Keyword(s):  
Laser Pulse ◽  
Femtosecond Laser ◽  
Silicon Wafer ◽  
Ablation Threshold ◽  
Pulsed Laser ◽  
Femtosecond Laser Ablation ◽  
Pulse Irradiation ◽  
Force Microscopy ◽  
Atomic Force ◽  
The Relationship

Experiment on ablation of silicon wafer on different crystallographic facet planes by single laser pulse irradiation was carried out with a femtosecond pulsed laser operating at a wavelength of 780 nm and a pulse width of 160 fs. The quality and morphology of the laser ablated silicon surface were evaluated by atomic force microscopy. The ablation threshold fluences on different crystallographic facet planes were obtained through the relationship between the squared diameter of the craters and pulse energy. The effects of different crystallographic facet planes of silicon wafer on the process of femtosecond laser ablation of silicon wafer were studied.

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