scholarly journals Analytical Modeling and Validation of a Preloaded Piezoceramic Current Output

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 353
Author(s):  
Bin Zhang ◽  
Hongsheng Liu ◽  
Dezhi Li ◽  
Jinhui Liang ◽  
Jun Gao

Energy harvesting using piezoceramic has drawn a lot of attention in recent years. Its potential usage in microelectromechanical systems is starting to become a reality thanks to the development of an integrated circuit. An accurate equivalent circuit of piezoceramic is important in energy harvesting and the sensing system. A piezoceramic is always considered to be a current source according to empirical testing, instead of the derivation from its piezoelectric characteristics, which lacks accuracy under complicated mechanical excitation situations. In this study, a new current output model is developed to accurately estimate its value under various kinds of stimulation. Considering the frequency, amplitude and preload variation imposed on a piezoceramic, the multivariate model parameters are obtained in relation to piezo coefficients. Using this model, the current output could be easily calculated without experimental testing in order to quickly estimate the output power in energy harvesting whatever its geometric shape and the various excitations.

2018 ◽  
Vol 97 (3) ◽  
pp. 515-531 ◽  
Author(s):  
Gabriel Chong ◽  
Harikrishnan Ramiah ◽  
Jun Yin ◽  
Jagadheswaran Rajendran ◽  
Wei Ru Wong ◽  
...  

Electronics ◽  
2019 ◽  
Vol 8 (5) ◽  
pp. 568 ◽  
Author(s):  
Roman Sotner ◽  
Jan Jerabek ◽  
Ladislav Polak ◽  
Roman Prokop ◽  
Vilem Kledrowetz

This paper introduces new integrated analog cells fabricated in a C035 I3T25 0.35-μm ON Semiconductor process suitable for a modular design of advanced active elements with multiple terminals and controllable features. We developed and realized five analog cells on a single integrated circuit (IC), namely a voltage differencing differential buffer, a voltage multiplier with current output in full complementary metal–oxide–semiconductor (CMOS) form, a voltage multiplier with current output with a bipolar core, a current-controlled current conveyor of the second generation with four current outputs, and a single-input and single-output adjustable current amplifier. These cells (sub-blocks of the manufactured IC device), designed to operate in a bandwidth of up to tens of MHz, can be used as a construction set for building a variety of advanced active elements, offering up to four independently adjustable internal parameters. The performances of all individual cells were verified by extensive laboratory measurements, and the obtained results were compared to simulations in the Cadence IC6 tool. The definition and assembly of a newly specified advanced active element, namely a current-controlled voltage differencing current conveyor transconductance amplifier (CC-VDCCTA), is shown as an example of modular interconnection of the selected cells. This device was implemented in a newly synthesized topology of an electronically linearly tunable quadrature oscillator. Features of this active element were verified by simulations and experimental measurements.


Micromachines ◽  
2020 ◽  
Vol 11 (11) ◽  
pp. 957
Author(s):  
Lixin Xu ◽  
Yiyuan Li ◽  
Jianhua Li

Microelectromechanical systems (MEMS) suspended inductors have excellent radio frequency (RF) performance and they are compatible with integrated circuit (IC). They will be shocked during manufacturing, transportation, and operation; in some applications, the shock amplitude can be as high as tens of thousands of gravitational acceleration (g, 9.8 m/s2). High-g shock will lead to the inductor deformation which affects its performance or even failure of the inductor structure. However, few studies have been carried out on the inductors under high-g shock. In this study, a kind of MEMS suspended inductor with excellent RF and mechanical performance is designed and fabricated. The failure and performance variation mechanism of the inductor under high-g shock is analyzed by measuring and comparing the performance measurement results and the π model parameters extraction results of the inductors before and after air cannon shock test. The results show that the increase of energy loss caused by substrate parasitic effect and the properties variation of the coil material affected by high-g shock are the main reasons for the decrease of RF performance parameters, and the critical stress exceeding the interlayer adhesion is the main reason for the failure of the inductor.


2018 ◽  
Author(s):  
Steve Wang ◽  
Jim McGinn ◽  
Peter Tvarozek ◽  
Amir Weiss

Abstract Secondary electron detector (SED) plays a vital role in a focused ion beam (FIB) system. A successful circuit edit requires a good effective detector. Novel approach is presented in this paper to improve the performance of such a detector, making circuit altering for the most advanced integrated circuit (IC) possible.


1987 ◽  
Vol 115 ◽  
Author(s):  
W. E. Rhoden ◽  
J. V. Maskowitz ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd

IntroductionElectromigration in aluminum films has been identified as an increasing concern for integrated circuit reliability. Electromigration is the mass transport of atoms in a conductor under a current stress. Electromigration occurs in conductors experiencing current densities greater than 105 A/cm2 and is accelerated by high temperature. The damage to aluminum films manifests itself in the formation of voids, hillocks and whiskers along the conductor. This paper presents a test vehicle preparation procedure which can be used to investigate electromigration.


Author(s):  
Douglas A. Gemme ◽  
Steven P. Bastien ◽  
Raymond B. Sepe ◽  
John Montgomery ◽  
Stephan T. Grilli ◽  
...  

2013 ◽  
Vol 22 (09) ◽  
pp. 1340001 ◽  
Author(s):  
JIUN-WEI HORNG ◽  
TO-YAO CHIU ◽  
CHING-PAO HSIAO ◽  
GUANG-TING HUANG

A current-mode universal biquadratic filter with three input terminals and one output terminal is presented. The architecture uses two current conveyors (CCs), two grounded capacitors and two grounded resistors; and can realize all standard second-order filter functions — highpass, bandpass, lowpass, notch and allpass. Moreover, the circuit still offers the following advantage features: very low active and passive sensitivities, using of grounded capacitors and resistors which is ideal for integrated circuit implementation, without requirements for critical component matching conditions and very high output impedance. The workability of the proposed circuit has been verified via HSPICE simulations using TSMC 0.18 μm, level 49 MOSFET technology.


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