scholarly journals Mechanical/Electrical Characterization of ZnO Nanomaterial Based on AFM/Nanomanipulator Embedded in SEM

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 248
Author(s):  
Mei Liu ◽  
Weilin Su ◽  
Xiangzheng Qin ◽  
Kai Cheng ◽  
Wei Ding ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Zno Nanorods ◽  
Schottky Contact ◽  
Electrical Characterization ◽  
Cost Effective ◽  
Atomic Force ◽  
Zno Nanomaterials ◽  
Operation Duration ◽  
Acceleration Voltage

ZnO nanomaterials have been widely used in micro/nano devices and structure due to special mechanical/electrical properties, and its characterization is still deficient and challenging. In this paper, ZnO nanomaterials, including nanorod and nanowire are characterized by atomic force microscope (AFM) and nanomanipulator embedded in scanning electron microscope (SEM) respectively, which can manipulate and observe simultaneously, and is efficient and cost effective. Surface morphology and mechanical properties were observed by AFM. Results showed that the average Young’s modulus of ZnO nanorods is 1.40 MPa and the average spring rate is 0.08 N/m. Electrical properties were characterized with nanomanipulator, which showed that the ZnO nanomaterial have cut-off characteristics and good schottky contact with the tungsten probes. A two-probe strategy was proposed for piezoelectric property measurement, which is easy to operate and adaptable to multiple nanomaterials. Experiments showed maximum voltage of a single ZnO nanowire is around 0.74 mV. Experiment criteria for ZnO manipulation and characterization were also studied, such as acceleration voltage, operation duration, sample preparation. Our work provides useful references for nanomaterial characterization and also theoretical basis for nanomaterials application.

Electrical Characterization of Electrochemically Grown ZnO Nanorods using STM

2012 ◽  
Vol 1391 ◽  
Author(s):  
Yuji Suzuki ◽  
Bright Ibheanacho ◽  
Arman Ahnood ◽  
Poopathy Kathirgamanathan ◽  
William Wong ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Solar Cells ◽  
Solar Cell ◽  
Electrical Properties ◽  
Electronic Devices ◽  
Zno Nanorods ◽  
Electrochemical Techniques ◽  
Electrical Characterization ◽  
Solar Cell Performance

AbstractZnO nanorods were grown homogenously and vertically on ITO using electrochemical techniques. The physical properties of the nanorods were characterized using SEM and optical absorption. The electrical conductivity, deduced using STM at different tip heights, and was found to be 20 Ω-cm with a carrier concentration of 3x1015 cm-3.The results show that electrochemically grown ZnO nanorods have electrical properties suitable for use in electronic devices such as solar cells and transistors. A-Si:H p-i-n solar cells were then deposited after the fabrication on the ZnO on ITO-coated substrates. The results show that the textured solar cell performance was 30% higher than the planar solar cell.

Electrical Properties of Graphene Contacts to AlGaN/GaN Heterostructures

2015 ◽  
Vol 821-823 ◽  
pp. 986-989
Author(s):  
Gabriele Fisichella ◽  
Giuseppe Greco ◽  
Fabrizio Roccaforte ◽  
Filippo Giannazzo
Keyword(s):  
Barrier Height ◽  
Schottky Barrier Height ◽  
Schottky Contact ◽  
Electrical Characterization ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Free Sample ◽  
The Impact

A nanoscale electrical characterization of graphene (Gr) contacts to AlxGa1-xN/GaN heterostructures has been carried out using conductive atomic force microscopy. The impact of the AlGaN microstructure on the current transport at Gr/AlGaN interface was evaluated considering two Al0.25Ga0.75N/GaN heterostructures with very different quality in terms of surface roughness and defectivity, i.e. a uniform and defect-free sample and a sample with a high density of V-defects, that locally cause a reduction of the AlGaN thickness. Rectifying contacts were found on the bare (Gr-free) AlGaN surfaces of both samples, but with a more inhomogeneous and lower Schottky barrier height (ΦB≈0.6 eV) in the presence of V-defects with respect to the case of the uniform AlGaN (ΦB≈0.9 eV). Very different electrical behaviour was observed for Gr on the two AlGaN samples, i.e. a low barrier height Schottky contact (ΦB≈0.4 eV) for the uniform AlGaN and an Ohmic contact for the defective AlGaN. Both Schottky and ohmic Gr/AlGaN contacts exhibit an excellent lateral uniformity, that can be ascribed to an averaging effect of the Gr electrode over the AlGaN interfacial inhomogeneities.

Case Studies in Atomic Force Probe Analysis

2006 ◽  
Author(s):  
Randal Mulder ◽  
Sam Subramanian ◽  
Tony Chrastecky
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Light Emission ◽  
Electrical Characterization ◽  
Logic Circuits ◽  
Contrast Imaging ◽  
Atomic Force ◽  
Measuring Surface ◽  
Analysis Environment

Abstract The use of atomic force probe (AFP) analysis in the analysis of semiconductor devices is expanding from its initial purpose of solely characterizing CMOS transistors at the contact level with a parametric analyzer. Other uses found for the AFP include the full electrical characterization of failing SRAM bit cells, current contrast imaging of SOI transistors, measuring surface roughness, the probing of metallization layers to measure leakages, and use with other tools, such as light emission, to quickly localize and identify defects in logic circuits. This paper presents several case studies in regards to these activities and their results. These case studies demonstrate the versatility of the AFP. The needs and demands of the failure analysis environment have quickly expanded its use. These expanded capabilities make the AFP more valuable for the failure analysis community.

Electrical Characterization of the Graphene-SiC Heterojunction

2012 ◽  
Vol 717-720 ◽  
pp. 641-644
Author(s):  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
Luke O. Nyakiti ◽  
Virginia D. Wheeler ◽  
Rachael L. Myers-Ward ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Charge Carrier ◽  
Graphene Sheet ◽  
Carrier Transport ◽  
Electrical Characterization ◽  
Epitaxial Graphene ◽  
Charge Carrier Transport ◽  
Semiconductor System ◽  
Significant Research

Graphene, a 2D material, has motivated significant research in the study of its in-plane charge carrier transport in order to understand and exploit its unique physical and electrical properties. The vertical graphene-semiconductor system, however, also presents opportunities for unique devices, yet there have been few attempts to understand the properties of carrier transport through the graphene sheet into an underlying substrate. In this work, we investigate the epitaxial graphene/4H-SiC system, studying both p and n-type SiC substrates with varying doping levels in order to better understand this vertical heterojunction.

Characterization of the Electrical Properties of Nickel-Based CMSX-4 Super-alloys Using Atomic Force Microscopy (AFM)

2004 ◽  
Vol 10 (S02) ◽  
pp. 1102-1103
Author(s):  
Guangchun Cui ◽  
Rosario A Gerhardt
Keyword(s):  
Atomic Force Microscopy ◽  
Electrical Properties ◽  
Force Microscopy ◽  
Atomic Force

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

Conducting atomic force microscopy for nanoscale electrical characterization of thin SiO2

1998 ◽  
Vol 73 (21) ◽  
pp. 3114-3116 ◽  
Author(s):  
Alexander Olbrich ◽  
Bernd Ebersberger ◽  
Christian Boit
Keyword(s):  
Atomic Force Microscopy ◽  
Electrical Characterization ◽  
Force Microscopy ◽  
Atomic Force
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