scholarly journals Thermal Impedance Characterization Using Optical Measurement Assisted by Multi-Physics Simulation for Multi-Chip SiC MOSFET Module

Micromachines ◽  
2020 ◽  
Vol 11 (12) ◽  
pp. 1060
Author(s):  
Min-Ki Kim ◽  
Sang Won Yoon
Keyword(s):  
Thermal Resistance ◽  
Fiber Optics ◽  
Optical Measurement ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Junction Temperature ◽  
Cooling Curve ◽  
Temperature Sensitive ◽  
Thermal Impedance ◽  
Power Module

In this paper, an approach to determine the thermal impedance of a multi-chip silicon carbide (SiC) power module is proposed, by fusing optical measurement and multi-physics simulations. The tested power module consists of four parallel SiC metal-oxide semiconductor field-effect transistors (MOSFETs) and four parallel SiC Schottky barrier diodes. This study mainly relies on junction temperature measurements performed using fiber optic temperature sensors instead of temperature-sensitive electrical parameters (TESPs). However, the fiber optics provide a relatively slow response compared to other available TSEP measurement methods and cannot detect fast responses. Therefore, the region corresponding to undetected signals is estimated via multi-physics simulations of the power module. This method provides a compensated cooling curve. We analyze the thermal resistance using network identification by deconvolution (NID). The estimated thermal resistance is compared to that obtained via a conventional method, and the difference is 3.8%. The proposed fusion method is accurate and reliable and does not require additional circuits or calibrations.

Numerical Thermal Simulation of Cryogenic Power Modules Under Liquid Nitrogen Cooling

2005 ◽  
Vol 128 (3) ◽  
pp. 267-272 ◽  
Author(s):  
Hua Ye ◽  
Harry Efstathiadis ◽  
Pradeep Haldar
Keyword(s):  
Liquid Nitrogen ◽  
Electrical Current ◽  
Oxide Semiconductor ◽  
Junction Temperature ◽  
Electronic Systems ◽  
Power Module ◽  
Power Modules ◽  
Allowable Range ◽  
Liquid Nitrogen Cooling ◽  
Thermal Simulations

Understanding the thermal performance of power modules under liquid nitrogen cooling is important for the design of cryogenic power electronic systems. When the power device is conducting electrical current, heat is generated due to Joule heating. The heat needs to be efficiently dissipated to the ambient in order to keep the temperature of the device within the allowable range; on the other hand, it would be advantageous to boost the current levels in the power devices to the highest possible level. Projecting the junction temperature of the power module during cryogenic operation is a crucial step in designing the system. In this paper, we present the thermal simulations of two different types of power metal-oxide semiconductor field effect transistor modules used to build a cryogenic inverter under liquid nitrogen pool cooling and discussed their implications on the design of the system.

Performance and Reliability Characteristics of 1200 V, 100 A, 200°C Half-Bridge SiC MOSFET-JBS Diode Power Modules

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000289-000296 ◽  
Author(s):  
James D. Scofield ◽  
J. Neil Merrett ◽  
James Richmond ◽  
Anant Agarwal ◽  
Scott Leslie
Keyword(s):  
Selection Process ◽  
Free Module ◽  
Junction Temperature ◽  
Thermal Impedance ◽  
Power Module ◽  
Package Design ◽  
Module Design ◽  
Reliability Characteristics ◽  
Power Modules ◽  
Environmental Requirement

A custom multi-chip power module packaging was designed to exploit the electrical and thermal performance potential of silicon carbide MOSFETs and JBS diodes. The dual thermo-mechanical package design was based on an aggressive 200°C ambient environmental requirement and 1200 V blocking and 100 A conduction ratings. A novel baseplate-free module design minimizes thermal impedance and the associated device junction temperature rise. In addition, the design incorporates a free-floating substrate configuration to minimize thermal expansion coefficient induced stresses between the substrate and case. Details of the module design and materials selection process will be discussed in addition to highlighting deficiencies in current packaging materials technologies when attempting to achieve high thermal cycle life reliability over an extended temperature range.

Silica Glasses

MRS Bulletin ◽  
1987 ◽  
Vol 12 (5) ◽  
pp. 20-25 ◽  
Author(s):  
David L. Griscom
Keyword(s):  
Fiber Optics ◽  
Field Effect Transistors ◽  
Coefficient Of Thermal Expansion ◽  
Fused Silica ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
Beach Sand ◽  
Crystal Silicon ◽  
Lattice Match ◽  
Perfect Lattice

Fifty years ago, who could have imagined that silicon dioxide—the material of ordinary beach sand—would become one of the most important materials of present-day optics and electronics? Yet SiO2 is arguably the most crucial material component in current-generation fiber optics and metal-oxide-semiconductor (MOS) device technology. In MOS field-effect transistors (MOSFETs), SiO2 serves not only as the gate insulator, but also as the “field oxide” (which isolates various components of an integrated circuit) and as the packaging material which seals the device from outside contamination. In these roles silica acts as a “perfect dielectric,” being characterized by an essentially infinite resistivity (actually ~1016 Ohm · m at 300 K). The ability to form such a high quality dielectric film with a near-perfect lattice match on single-crystal silicon continues to favor silicon-based MOS technology over technologies founded on electrically superior GaAs.In the rapidly developing fiber optic arena, fused silica is still “king” due to a combination of properties, including extremely high transparency over a range of usable wavelengths (Figure 1), low material dispersion (~0 at 1.3/üm), high tensile strength (~ 150 kpsi), and high chemical durability. In addition, bulk forms of silica continue to find application in lenses, prisms, windows, and low-coefficient-of-thermal-expansion reflective optics; thin silica films are common components of the highly reflective and anti-reflective surface coatings which are laid down on reflective and transmissive optics, respectively.

scholarly journals Online Junction Temperature Cycle Recording of an IGBT Power Module in a Hybrid Car

2015 ◽  
Vol 2015 ◽  
pp. 1-14 ◽  
Author(s):  
Marco Denk ◽  
Mark-M. Bakran
Keyword(s):  
Integrated Control ◽  
Control Unit ◽  
Relevant Information ◽  
Junction Temperature ◽  
Voltage Source ◽  
Temperature Cycle ◽  
Temperature Sensitive ◽  
Voltage Source Inverter ◽  
Power Module ◽  
Temperature Cycles

The accuracy of the lifetime calculation approach of IGBT power modules used in hybrid-electric powertrains suffers greatly from the inaccurate knowledge of application typical load-profiles. To verify the theoretical load-profiles with data from the field this paper presents a concept to record all junction temperature cycles of an IGBT power module during its operation in a test vehicle. For this purpose the IGBT junction temperature is measured with a modified gate driver that determines the temperature sensitive IGBT internal gate resistor by superimposing the negative gate voltage with a high-frequency identification signal. An integrated control unit manages the TJ measurement during the regular switching operation, the exchange of data with the system controller, and the automatic calibration of the sensor system. To calculate and store temperature cycles on a microcontroller an online Rainflow counting algorithm was developed. The special feature of this algorithm is a very accurate extraction of lifetime relevant information with a significantly reduced calculation and storage effort. Until now the recording concept could be realized and tested within a laboratory voltage source inverter. Currently the IGBT driver with integrated junction temperature measurement and the online cycle recording algorithm is integrated in the voltage source inverter of first test vehicles. Such research will provide representative load-profiles to verify and optimize the theoretical load-profiles used in today’s lifetime calculation.

scholarly journals Temperature Estimation of SiC Power Devices Using High Frequency Chirp Signals

Energies ◽  
2021 ◽  
Vol 14 (16) ◽  
pp. 4912
Author(s):  
Xiang Lu ◽  
Volker Pickert ◽  
Maher Al-Greer ◽  
Cuili Chen ◽  
Xiang Wang ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Frequency ◽  
Oxide Semiconductor ◽  
Junction Temperature ◽  
Temperature Sensitive ◽  
Frequency Chirp ◽  
Single Chip ◽  
Chirp Signals ◽  
Power Switches ◽  
Source Voltage

Silicon carbide devices have become increasingly popular in electric vehicles, predominantly due to their fast-switching speeds, which allow for the construction of smaller power converters. Temperature sensitive electrical parameters (TSEPs) can be used to determine the junction temperature, just like silicon-based power switches. This paper presents a new technique to estimate the junction temperature of a single-chip silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET). During off-state operation, high-frequency chirp signals below the resonance frequency of the gate-source impedance are injected into the gate of a discrete SiC device. The gate-source voltage frequency response is captured and then processed using the fast Fourier transform. The data is then accumulated and displayed over the chirp frequency spectrum. Results show a linear relationship between the processed gate-source voltage and the junction temperature. The effectiveness of the proposed TSEPs is demonstrated in a laboratory scenario, where chirp signals are injected in a stand-alone biased discrete SiC module, and in an in-field scenario, where the TSEP concept is applied to a MOSFET operating in a DC/DC converter.

scholarly journals Extraction of Junction Temperature of SiC MOSFET Module Based on Turn-On dIDS/dt

Energies ◽  
2018 ◽  
Vol 11 (8) ◽  
pp. 1951 ◽  
Author(s):  
Delei Huang ◽  
Guojun Tan ◽  
Chengfei Geng ◽  
Jingwei Zhang ◽  
Chang Liu
Keyword(s):  
Printed Circuit Board ◽  
Field Effect Transistors ◽  
Rogowski Coil ◽  
Circuit Board ◽  
Oxide Semiconductor ◽  
Junction Temperature ◽  
Driving Voltage ◽  
Factors Affecting ◽  
Turn On ◽  
Gate Resistance

In this paper, a method of extracting the junction temperature based on the turn-on current switching rate (dIDS/dt) of silicon carbide (SiC) metal-oxide semiconductor field effect transistors (MOSFETs) is proposed. The temperature dependence of dIDS/dt is analyzed theoretically, and experimentally to show that dIDS/dt increases with the rising junction temperature. In addition, other factors affecting dIDS/dt are also discussed by using the fundamental device physics equations and experiments. The result shows that the increase of the DC-link voltage VDC, the external gate resistance RG-ext, and the decrease of the driving voltage VGG can increase the temperature sensitivity of the dIDS/dt. A PCB (printed circuit board) Rogowski coil measuring circuit based on the fact that the SiC MOSFET chip temperature and dIDS/dt is estimated in a linear way is designed to obtain the junction temperature. The experimental results demonstrate that the proposed junction temperature extracting is effective.

High Temperature SiC Power Module Packaging

2009 ◽  
Author(s):  
Brian Rowden ◽  
Alan Mantooth ◽  
Simon Ang ◽  
Alex Lostetter ◽  
Jared Hornberger ◽  
...  
Keyword(s):  
High Temperature ◽  
High Temperatures ◽  
High Reliability ◽  
Extreme Environments ◽  
Transient Liquid Phase ◽  
Wide Band ◽  
Junction Temperature ◽  
System Level ◽  
Thermal Impedance ◽  
Power Module

Wide band gap semiconductors such as silicon carbide (SiC) provide the potential for significant advantages over traditional silicon alternatives including operation at high temperatures for extreme environments and applications, higher voltages reducing the number of devices required for high power applications, and higher switching frequencies to reduce the size of passive elements in the circuit and system. All of these attributes contribute to increased power density at the device and system levels, but the ability to exploit these properties requires complementary high temperature packaging techniques and materials to connect these semiconductors to the system around them. With increasing temperature, the balance of thermal, mechanical, and electrical properties for these packaging materials becomes critical to ensure low thermal impedance, high reliability, and minimal electrical losses. A primary requirement for module operation at high temperatures is a suitable high temperature attachment technology at both the device and module levels. This paper presents a transient liquid phase (TLP) attachment method implemented to provide lead-free bonding for a SiC half-bridge power module. This module was designed for continuous operation above 250 °C for use as a building block for multiple system level applications including hybrid electric vehicles, distributed energy resources, and multilevel converters. A silver-based TLP system was used to accommodate the device and substrate bond with a single TLP system compatible with the device metallurgy. A SiC power module was built using this system and electrically tested at a 250 °C continuous junction temperature. The TLP bonding process was demonstrated for multiple devices in parallel and large substrate bonding surfaces with traditional device and substrate metallization and no requirements for surface planarization or treatment. The results are presented in the paper.

scholarly journals Specificity of solar cells thermal resistance measurement.

2021 ◽  
Author(s):  
V.I. Smirnov ◽  
◽  
V.A. Sergeev ◽  
A.A. Gavrikov ◽  
◽  
...  
Keyword(s):  
Solar Cells ◽  
Thermal Resistance ◽  
Modulation Frequency ◽  
High Heat ◽  
Junction Temperature ◽  
Modulation Method ◽  
Variable Component ◽  
Thermal Impedance ◽  
Current Pulses ◽  
Resistance Component

The results of power solar batteries' thermal resistance measurements are described. A distinctive feature of such batteries is the high heat capacity of the semiconductor material, as well as the high total electrical capacity of p-n-junctions. This complicates the thermal resistance of the measuring process, based on heating the object by the heating current pulses and measuring the temperature of the p-n-junction in the pauses between pulses. To measure the thermal resistance of power solar battery the modulation method was used, a device under test (DUT) heated with current pulses with duration modulated harmonically. The response to the heat (a variable component of the p-n-junction temperature) is measured in the pauses between the pulses. To detect the thermal resistance component junction-to-case, the dependence of the thermal impedance on heating power modulation frequency was measured. In the measured dependence, a frequency range is found when the real part of the thermal impedance value remains constant. This allows the determining of the "junction-to-case" thermal resistance component. Were made estimates of the duration of a single measurement of thermal resistance and a conclusion about the possibility of implementing selective technological control of this parameter in the production of powerful solar cells.

Development of a Wire-Bonding-Less SiC Power Module Operating over a Wide Temperature Range

2016 ◽  
Vol 858 ◽  
pp. 1066-1069 ◽  
Author(s):  
Shinya Sato ◽  
Hidekazu Tanisawa ◽  
Takeshi Anzai ◽  
Hiroki Takahashi ◽  
Yoshinori Murakami ◽  
...  
Keyword(s):  
High Temperature ◽  
Wide Temperature Range ◽  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Power Module ◽  
Active Metal ◽  
Switching Characteristics

In this paper, we describe a power module fabricated using SiC metal–oxide–semiconductor field-effect transistors (MOSFETs). A C-R snubber is integrated into this power module for reduction of the surge voltage and dumping of the voltage ringing. The four SiC MOSFETs are sandwiched between active metal copper (AMC) substrates. The surfaces of the SiC MOSFETs are attached to AMC substrates by Al bumps, owing to which the power module shows low inductance. Moreover, this power module ensures credibility and reliability at higher operating temperatures beyond 200 °C. The switching characteristics of the module are studied experimentally for high-temperature and high-frequency operations.

Thermal and mechanical properties of sintered Ag layers for power module assembly

2015 ◽  
Vol 32 (1) ◽  
pp. 37-42 ◽  
Author(s):  
Marcin Myśliwiec ◽  
Ryszard Kisiel
Keyword(s):  
Mechanical Properties ◽  
Thermal Resistance ◽  
Point Of View ◽  
Future Research ◽  
Temperature Sensitive ◽  
Thermal And Mechanical Properties ◽  
Power Module ◽  
Content Type ◽  
Sintered Ag

Purpose – The purpose of our paper is to investigate thermal and mechanical properties of Ag sintered layers used for assembly of SiC diode to Direct Bonding Copper (DBC) interposer. How SiC devices are assembled to ceramic package defines efficiency of heat transfer and mechanical support. Design/methodology/approach – Ag microparticles, sized 2-4 μm and flake shaped, were used as joining material. The parameters of sintering process were as follows: temperature 400°C, pressure 10 MPa and time 40 min. It was found that after sintering and long-term aging in air at 350°C the adhesion is in the range of 10 MPa, which is enough from a practical point of view. The thermal properties of the SiC die assembled into a ceramic package were also investigated. In the first step, the calibration of the temperature-sensitive parameter VF (IF = 2 mA) was done and the relation between VF and temperature was found. In the next step, the thermal resistance between junction and case was determined knowing junction and case temperature. Findings – For SiC diode with Au bottom metallization joined to the DBC interposer by Ni/Au metallization by Ag microparticle layer, Rth j-c is in the range of 2-3.5°C/W, and for SiC diode with Ag bottom metallization joined to DBC interposer with Ag metallization by Ag microparticle layer, Rth j-c is in the range of 4.5-5.5°C/W. Research limitations/implications – In the future, research on thermal resistance of SiC diodes assembled onto the DBC interposer with Au and Ag metallization in the temperature range up to 350°C needs to be carried out. To do this, it necessary to find a solution for the attaches that leads to ceramic package able to work at such high temperature. Originality/value – Obtained results are comparable with results mentioned by other studies for eutectic Au/Sn or SAC solder joints; however, the solution proposed by us can properly work at significantly higher temperatures.

Sign in / Sign up

Export Citation Format

Share Document