scholarly journals A Time Delay Neural Network Based Technique for Nonlinear Microwave Device Modeling

Micromachines ◽  
2020 ◽  
Vol 11 (9) ◽  
pp. 831
Author(s):  
Wenyuan Liu ◽  
Lin Zhu ◽  
Feng Feng ◽  
Wei Zhang ◽  
Qi-Jun Zhang ◽  
...  
Keyword(s):  
Neural Network ◽  
Time Delay ◽  
High Electron Mobility Transistor ◽  
Microwave Device ◽  
Microwave Devices ◽  
Neural Network Modeling ◽  
Device Modeling ◽  
High Electron ◽  
Large Signal ◽  
New Formulation

This paper presents a nonlinear microwave device modeling technique that is based on time delay neural network (TDNN). The proposed technique can accurately model the nonlinear microwave devices when compared to static neural network modeling method. A new formulation is developed to allow for the proposed TDNN model to be trained with DC, small-signal, and large signal data, which can enhance the generalization of the device model. An algorithm is formulated to train the proposed TDNN model efficiently. This proposed technique is verified by GaAs metal-semiconductor-field-effect transistor (MESFET), and GaAs high-electron mobility transistor (HEMT) examples. These two examples demonstrate that the proposed TDNN is an efficient and valid approach for modeling various types of nonlinear microwave devices.

scholarly journals Improvement of Small Signal Equivalent Simulations for Power and Efficiency Matching of GaN HEMTs

Electronics ◽  
2021 ◽  
Vol 10 (3) ◽  
pp. 263
Author(s):  
Roberto Quaglia
Keyword(s):  
Power Amplifier ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Large Signal ◽  
Signal Model ◽  
Or Efficiency ◽  
Summary Table ◽  
Matching Networks ◽  
Amplifier Design ◽  
Frequency Power

In high-frequency power-amplifier design, it is common practice to approach the design of reactive matching networks using linear simulators and targeting a reflection loss limit (referenced to the target impedance). It is well known that this is only a first-pass design technique, since output power or efficiency contours do not correspond to mismatch circles. This paper presents a method to improve the accuracy of this approach in the case of matching network design for power amplifiers based on gallium nitride (GaN) technology. Equivalent mismatch circles, which lay within the power or efficiency contours targeted by the design, are analytically obtained thanks to geometrical considerations. A summary table providing the parameters to use for typical contours is provided. The technique is demonstrated on two examples of power-amplifier design on the 6–12 GHz band using the non-linear large-signal model of a GaN High Electron Mobility Transistor (HEMT).

Intersubband Device Modeling of Gallium Nitride High Electron Mobility Transistor for Terahertz Applications

Radio Science ◽  
2019 ◽  
Vol 54 (12) ◽  
pp. 1172-1180
Author(s):  
R. K. Kaneriya ◽  
Gunjan Rastogi ◽  
P. K. Basu ◽  
R. B. Upadhyay ◽  
A. N. Bhattacharya
Keyword(s):  
Gallium Nitride ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Device Modeling ◽  
High Electron ◽  
High Electron Mobility ◽  
Terahertz Applications

scholarly journals Charge-conservative GaN HEMT nonlinear modeling from non-isodynamic multi-bias S-parameter measurements

2019 ◽  
Vol 11 (5-6) ◽  
pp. 431-440 ◽  
Author(s):  
Gian Piero Gibiino ◽  
Alberto Santarelli ◽  
Fabio Filicori
Keyword(s):  
Nonlinear Modeling ◽  
Charge Trapping ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Large Signal ◽  
Model Accuracy ◽  
Charge Conservation ◽  
Gan Hemt ◽  
S Parameter ◽  
Systematic Identification

AbstractGuaranteeing charge conservation of empirically extracted Gallium Nitride (GaN) High-Electron-Mobility Transistor (HEMT) models is necessary to avoid simulation issues and artifacts in the prediction. However, dispersive effects, such as thermal and charge-trapping phenomena, may compromise the model extraction flow resulting in poor model accuracy. Although GaN HEMT models should be extracted, in principle, from an isodynamic dataset, this work deals with the systematic identification of an approximate, yet most suitable, charge-conservative empirical model from standard multi-bias S-parameters, i.e., from non-isodynamic data. Results show that the obtained model maintains a reasonable accuracy in predicting both small- and large-signal behavior, while providing the benefits of charge conservation.

Sign in / Sign up

Export Citation Format

Share Document