scholarly journals Rolling Nanoelectrode Lithography

Micromachines ◽  
2020 ◽  
Vol 11 (7) ◽  
pp. 656
Author(s):  
Rashed Md. Murad Hasan ◽  
Xichun Luo ◽  
Jining Sun
Keyword(s):  
Oxidation Process ◽  
Pattern Transfer ◽  
Primary Control ◽  
Control Parameters ◽  
Test Bed ◽  
Applied Bias ◽  
Large Area ◽  
Applied Bias Voltage ◽  
Local Oxidation ◽  
First Time

Non-uniformity and low throughput issues severely limit the application of nanoelectrode lithography for large area nanopatterning. This paper proposes, for the first time, a new rolling nanoelectrode lithography approach to overcome these challenges. A test-bed was developed to realize uniform pressure distribution over the whole contact area between the roller and the silicon specimen, so that the local oxidation process occurred uniformly over a large area of the specimen. In this work, a brass roller wrapped with a fabricated polycarbonate strip was used as a stamp to generate nanopatterns on a silicon surface. The experimental results show that a uniform pattern transfer for a large area can be achieved with this new rolling nanoelectrode lithography approach. The rolling speed and the applied bias voltage were identified as the primary control parameters for oxide growth. Furthermore, the pattern direction showed no significant influence on the oxide process. We therefore demonstrated that nanoelectrode lithography can be scaled up for large-area nanofabrication by incorporating a roller stamp.

Three Color Detection in the Charge Integration Regime by ATCD for Large Area Applications

1996 ◽  
Vol 420 ◽  
Author(s):  
F. Irrera ◽  
F. Lemmi ◽  
F. Palma
Keyword(s):  
Color Image ◽  
Red Light ◽  
Incident Radiation ◽  
Applied Bias ◽  
Large Area ◽  
Applied Bias Voltage ◽  
Device Structure ◽  
Color Detection ◽  
Electrical Connections ◽  
Charge Integration

AbstractLarge area color image scanners are currently being widely investigated. The a-Si:H/a-SiC:H Adjustable Threshold Color Detector (ATCD) recently presented by the authors is suitable for greatly simplifying the structure of the arrays since ATCDs have just two external electrical connections. This makes possible to use the row-column addressing of pixels.In this work, the transient operation of ATCDs in the charge integration regime is discussed. Charge integration is operated by photocurrent discharging the three series connected capacitances which compose the device structure. The penetration depth of the incident radiation depends on the wavelength and determines which of the three capacitances is discharged. The applied bias voltage determines the polarization of the three junctions and the three capacitance actually sensed. Correct blue, green and red light detection is shown in the read-out transients and the read-out and saturation times are presented. Finally design rules of the device and read-out system are given in order to achieve a correct detection of the three colors.

scholarly journals Adaptability of Ultrasonic Lamb Wave Touchscreen to the Variations in Touch Force and Touch Area

Sensors ◽  
2021 ◽  
Vol 21 (5) ◽  
pp. 1736
Author(s):  
Zengchong Yang ◽  
Xiucheng Liu ◽  
Bin Wu ◽  
Ren Liu
Keyword(s):  
Lamb Wave ◽  
Weight Coefficient ◽  
The Self ◽  
Reference Database ◽  
Learning Method ◽  
Improved Method ◽  
Large Area ◽  
Localization Model ◽  
Reference Databases ◽  
First Time

Previous studies on Lamb wave touchscreen (LWT) were carried out based on the assumption that the unknown touch had the consistent parameters with acoustic fingerprints in the reference database. The adaptability of LWT to the variations in touch force and touch area was investigated in this study for the first time. The automatic collection of the databases of acoustic fingerprints was realized with an experimental prototype of LWT employing three pairs of transmitter–receivers. The self-adaptive updated weight coefficient of the used transmitter–receiver pairs was employed to successfully improve the accuracy of the localization model established based on a learning method. The performance of the improved method in locating single- and two-touch actions with the reference database of different parameters was carefully evaluated. The robustness of the LWT to the variation of the touch force varied with the touch area. Moreover, it was feasible to locate touch actions of large area with reference databases of small touch areas as long as the unknown touch and the reference databases met the condition of equivalent averaged stress.

scholarly journals Influence of Applied Bias Voltage on the Composition, Structure, and Properties of Ti:Si-Codoped a-C:H Films Prepared by Magnetron Sputtering

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Jinlong Jiang ◽  
Qiong Wang ◽  
Yubao Wang ◽  
Zhang Xia ◽  
Hua Yang ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Bias Voltage ◽  
Tribological Properties ◽  
Structure And Properties ◽  
Applied Bias ◽  
Applied Bias Voltage ◽  
Methane Mixture ◽  
Composition Structure

The titanium- and silicon-codoped a-C:H films were prepared at different applied bias voltage by magnetron sputtering TiSi target in argon and methane mixture atmosphere. The influence of the applied bias voltage on the composition, surface morphology, structure, and mechanical properties of the films was investigated by XPS, AFM, Raman, FTIR spectroscopy, and nanoindenter. The tribological properties of the films were characterized on an UMT-2MT tribometer. The results demonstrated that the film became smoother and denser with increasing the applied bias voltage up to −200 V, whereas surface roughness increased due to the enhancement of ion bombardment as the applied bias voltage further increased. The sp3carbon fraction in the films monotonously decreased with increasing the applied bias voltage. The film exhibited moderate hardness and the superior tribological properties at the applied bias voltage of −100 V. The tribological behaviors are correlated to the H/E or H3/E2ratio of the films.

scholarly journals Laser-Induced Growth of Titanium Nitride Microcolumns on Biased Titanium Targets

2005 ◽  
Vol 20 (1) ◽  
pp. 62-67 ◽  
Author(s):  
E. György ◽  
A. Pérez del Pino ◽  
P. Serra ◽  
J.L. Morenza
Keyword(s):  
Bias Voltage ◽  
Single Pulse ◽  
Laser Pulses ◽  
High Repetition Rate ◽  
Applied Bias ◽  
Applied Bias Voltage ◽  
Surface Microrelief ◽  
High Repetition ◽  
Melting Threshold ◽  
Biased Samples

Titanium targets with a bias voltage ranging from −500 to +500 V were submitted to multipulse high repetition rate Nd:yttrium aluminum garnet (YAG; λ = 1.064 μm, τ ∼ 300 ns, ν = 30 kHz) laser irradiations in nitrogen at intensity values below the single-pulse melting threshold. The morphology of the TiN structures formed under the cumulative action of the laser pulses on the surface of the unbiased and biased targets was investigated by profilometry and scanning electron microscopy. Under these irradiation conditions, a specific columnar surface microrelief developed. The height of the microcolumns reached about 10–15 μm, and their diameter about 1–2 μm. The development of TiN microcolumns was enhanced by the applied bias voltage. The enhancement in the negative biased samples was stronger than that in the positive biased ones.

scholarly journals Current-Induced Spin Photocurrent in GaAs at Room Temperature

Sensors ◽  
2022 ◽  
Vol 22 (1) ◽  
pp. 399
Author(s):  
Yang Zhang ◽  
Yu Liu ◽  
Xiao-Lan Xue ◽  
Xiao-Lin Zeng ◽  
Jing Wu ◽  
...  
Keyword(s):  
Electric Field ◽  
Spin Polarization ◽  
Applied Electric Field ◽  
Room Temperature ◽  
Polarization Direction ◽  
Applied Bias ◽  
Applied Bias Voltage ◽  
Sample Plane ◽  
Bulk Gaas ◽  
Circularly Polarized

Circularly polarized photocurrent, observed in p-doped bulk GaAs, varies nonlinearly with the applied bias voltage at room temperature. It has been explored that this phenomenon arises from the current-induced spin polarization in GaAs. In addition, we found that the current-induced spin polarization direction of p-doped bulk GaAs grown in the (001) direction lies in the sample plane and is perpendicular to the applied electric field, which is the same as that in GaAs quantum well. This research indicates that circularly polarized photocurrent is a new optical approach to investigate the current-induced spin polarization at room temperature.

GaN MSM UV Sensor Using Multi-Layer Graphene Schottky Electrodes

2013 ◽  
Vol 481 ◽  
pp. 146-149 ◽  
Author(s):  
Chang Ju Lee ◽  
Hyeon Gu Cha ◽  
Seul Ki Hong ◽  
Seung Hyun Doh ◽  
Yi Sak Koo ◽  
...  
Keyword(s):  
Current Density ◽  
Applied Bias ◽  
Uv Sensor ◽  
Response Characteristics ◽  
Layer Graphene ◽  
Metal Type ◽  
Metal Semiconductor Metal ◽  
Uv Visible ◽  
Uv Response ◽  
First Time

We demonstrated a metal-semiconductor-metal type GaN UV sensor for the first time by using multi-layer graphene as a Schottky electrode. Multi-layer graphene shows good Schottky electrode characteristic and fabricated UV sensor shows good UV response characteristics. The maximum dark current density and photo-responsive current density were 6.42 × 10-9 A/cm2 and 5.57 × 10-5 A/cm2 at the 10 V bias, respectively. UV/visible rejection ratios were higher than 103 with each applied bias from 1 V to 15 V.

Microstrip Gas Counters

2014 ◽  
pp. 31-51
Keyword(s):  
Glass Surface ◽  
Two Dimensional ◽  
Large Area ◽  
Proportional Chamber ◽  
Microelectronic Technology ◽  
Multiwire Proportional Chamber ◽  
Dimensional Version ◽  
A Chain ◽  
New Generation ◽  
First Time

In this chapter, the first micropattern gaseous detector, the microstrip gas counter, invented in 1988 by A. Oed, is presented. It consists of alternating anode and cathode strips with a pitch of less than 1 mm created on a glass surface. It can be considered a two-dimensional version of a multiwire proportional chamber. This was the first time microelectronic technology was applied to manufacturing of gaseous detectors. This pioneering work offers new possibilities for large area planar detectors with small gaps between the anode and the cathode electrodes (less than 0.1 mm). Initially, this detector suffered from several serious problems, such as charging up of the substrate, discharges which destroyed the thin anode strips, etc. However, by efforts of the international RD28 collaboration hosted by CERN, most of them were solved. Although nowadays this detector has very limited applications, its importance was that it triggered a chain of similar developments made by various groups, and these collective efforts finally led to the creation of a new generation of gaseous detectors-micropattern detectors.

scholarly journals NGC 3894: a young radio galaxy seen by Fermi-LAT

2020 ◽  
Vol 635 ◽  
pp. A185 ◽  
Author(s):  
G. Principe ◽  
G. Migliori ◽  
T. J. Johnson ◽  
F. D’Ammando ◽  
M. Giroletti ◽  
...  
Keyword(s):  
Radio Galaxy ◽  
Radio Galaxies ◽  
High Energy ◽  
Apparent Velocity ◽  
Large Area ◽  
Long Baseline ◽  
Full Period ◽  
Very Long Baseline Array ◽  
High Energy Emission ◽  
First Time

Context. According to radiative models, radio galaxies may produce γ-ray emission from the first stages of their evolution. However, very few such galaxies have been detected by the Fermi Large Area Telescope (LAT) so far. Aims. NGC 3894 is a nearby (z = 0.0108) object that belongs to the class of compact symmetric objects (CSOs, i.e., the most compact and youngest radio galaxies), which is associated with a γ-ray counterpart in the Fourth Fermi-LAT source catalog. Here we present a study of the source in the γ-ray and radio bands aimed at investigating its high-energy emission and assess its young nature. Methods. We analyzed 10.8 years of Fermi-LAT data between 100 MeV and 300 GeV and determined the spectral and variability characteristics of the source. Multi-epoch very long baseline array (VLBA) observations between 5 and 15 GHz over a period of 35years were used to study the radio morphology of NGC 3894 and its evolution. Results. NGC 3894 is detected in γ-rays with a significance >9σ over the full period, and no significant variability has been observed in the γ-ray flux on a yearly time-scale. The spectrum is modeled with a flat power law (Γ = 2.0 ± 0.1) and a flux on the order of 2.2 × 10−9 ph cm−2 s−1. For the first time, the VLBA data allow us to constrain with high precision the apparent velocity of the jet and counter-jet side to be βapp, NW = 0.132 ± 0.004 and βapp, SE = 0.065 ± 0.003, respectively. Conclusions. Fermi-LAT and VLBA results favor the youth scenario for the inner structure of this object, with an estimated dynamical age of 59 ± 5 years. The estimated range of viewing angle (10° < θ <  21°) does not exclude a possible jet-like origin of the γ-ray emission.

scholarly journals Radio counterparts of gamma-ray pulsars

2012 ◽  
Vol 8 (S291) ◽  
pp. 87-92
Author(s):  
L. Guillemot
Keyword(s):  
Gamma Ray ◽  
Population Studies ◽  
Radio Observations ◽  
Large Area ◽  
Millisecond Pulsars ◽  
Follow Up Studies ◽  
First Time

AbstractObservations of pulsars with the Large Area Telescope (LAT) on the Fermi satellite have revolutionized our view of the gamma-ray pulsar population. For the first time, a large number of young gamma-ray pulsars have been discovered in blind searches of the LAT data. More generally, the LAT has discovered many new gamma-ray sources whose properties suggest that they are powered by unknown pulsars. Radio observations of gamma-ray sources have been key to the success of pulsar studies with the LAT. For example, radio observations of LAT-discovered pulsars provide constraints on the relative beaming fractions, which are crucial for pulsar population studies. Also, radio searches of LAT sources with no known counterparts have been very efficient, with the discovery of over forty millisecond pulsars. I review radio follow-up studies of LAT-discovered pulsars and unidentified sources, and discuss some of the implications of the results.

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