Three Color Detection in the Charge Integration Regime by ATCD for Large Area Applications

1996 ◽  
Vol 420 ◽  
Author(s):  
F. Irrera ◽  
F. Lemmi ◽  
F. Palma
Keyword(s):  
Color Image ◽  
Red Light ◽  
Incident Radiation ◽  
Applied Bias ◽  
Large Area ◽  
Applied Bias Voltage ◽  
Device Structure ◽  
Color Detection ◽  
Electrical Connections ◽  
Charge Integration

AbstractLarge area color image scanners are currently being widely investigated. The a-Si:H/a-SiC:H Adjustable Threshold Color Detector (ATCD) recently presented by the authors is suitable for greatly simplifying the structure of the arrays since ATCDs have just two external electrical connections. This makes possible to use the row-column addressing of pixels.In this work, the transient operation of ATCDs in the charge integration regime is discussed. Charge integration is operated by photocurrent discharging the three series connected capacitances which compose the device structure. The penetration depth of the incident radiation depends on the wavelength and determines which of the three capacitances is discharged. The applied bias voltage determines the polarization of the three junctions and the three capacitance actually sensed. Correct blue, green and red light detection is shown in the read-out transients and the read-out and saturation times are presented. Finally design rules of the device and read-out system are given in order to achieve a correct detection of the three colors.

Design of Atcd three Color Detector for Color Detection in Transient Regime

1998 ◽  
Vol 507 ◽  
Author(s):  
F. Irrera ◽  
F. Palma ◽  
F. Lemmi ◽  
M. Diotallevi
Keyword(s):  
System Architecture ◽  
The Self ◽  
Large Area ◽  
Sampling Process ◽  
Self Bias ◽  
Color Detection ◽  
Charge Sampling ◽  
Charge Integration ◽  
New System

ABSTRACTIn this paper we present the characterization of an ATCD three color detector used in the charge integration regime, as necessary in large area matrices. In particular, we present linearity measurements of mesa insulated devices and characterization of the self-bias process occurring in the transient read-out of stacked structures. A new system architecture is introduced which considers interlaced row charge restore, and separates the charge restore process from the charge sampling process in order to reach self-bias within a short frame time.

scholarly journals Rolling Nanoelectrode Lithography

Micromachines ◽  
2020 ◽  
Vol 11 (7) ◽  
pp. 656
Author(s):  
Rashed Md. Murad Hasan ◽  
Xichun Luo ◽  
Jining Sun
Keyword(s):  
Oxidation Process ◽  
Pattern Transfer ◽  
Primary Control ◽  
Control Parameters ◽  
Test Bed ◽  
Applied Bias ◽  
Large Area ◽  
Applied Bias Voltage ◽  
Local Oxidation ◽  
First Time

Non-uniformity and low throughput issues severely limit the application of nanoelectrode lithography for large area nanopatterning. This paper proposes, for the first time, a new rolling nanoelectrode lithography approach to overcome these challenges. A test-bed was developed to realize uniform pressure distribution over the whole contact area between the roller and the silicon specimen, so that the local oxidation process occurred uniformly over a large area of the specimen. In this work, a brass roller wrapped with a fabricated polycarbonate strip was used as a stamp to generate nanopatterns on a silicon surface. The experimental results show that a uniform pattern transfer for a large area can be achieved with this new rolling nanoelectrode lithography approach. The rolling speed and the applied bias voltage were identified as the primary control parameters for oxide growth. Furthermore, the pattern direction showed no significant influence on the oxide process. We therefore demonstrated that nanoelectrode lithography can be scaled up for large-area nanofabrication by incorporating a roller stamp.

scholarly journals Large Area Emission in p-Type Polymer-Based Light-Emitting Field-Effect Transistors by Incorporating Charge Injection Interlayers

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 901
Author(s):  
Gizem Acar ◽  
Muhammad Javaid Iqbal ◽  
Mujeeb Ullah Chaudhry
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Injection ◽  
Limiting Factors ◽  
Hole Injection ◽  
Large Area ◽  
Device Structure ◽  
Light Emitting ◽  
Emission Area ◽  
P Type

Organic light-emitting field-effect transistors (LEFETs) provide the possibility of simplifying the display pixilation design as they integrate the drive-transistor and the light emission in a single architecture. However, in p-type LEFETs, simultaneously achieving higher external quantum efficiency (EQE) at higher brightness, larger and stable emission area, and high switching speed are the limiting factors for to realise their applications. Herein, we present a p-type polymer heterostructure-based LEFET architecture with electron and hole injection interlayers to improve the charge injection into the light-emitting layer, which leads to better recombination. This device structure provides access to hole mobility of ~2.1 cm2 V−1 s−1 and EQE of 1.6% at a luminance of 2600 cd m−2. Most importantly, we observed a large area emission under the entire drain electrode, which was spatially stable (emission area is not dependent on the gate voltage and current density). These results show an important advancement in polymer-based LEFET technology toward realizing new digital display applications.

scholarly journals Influence of Applied Bias Voltage on the Composition, Structure, and Properties of Ti:Si-Codoped a-C:H Films Prepared by Magnetron Sputtering

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Jinlong Jiang ◽  
Qiong Wang ◽  
Yubao Wang ◽  
Zhang Xia ◽  
Hua Yang ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Bias Voltage ◽  
Tribological Properties ◽  
Structure And Properties ◽  
Applied Bias ◽  
Applied Bias Voltage ◽  
Methane Mixture ◽  
Composition Structure

The titanium- and silicon-codoped a-C:H films were prepared at different applied bias voltage by magnetron sputtering TiSi target in argon and methane mixture atmosphere. The influence of the applied bias voltage on the composition, surface morphology, structure, and mechanical properties of the films was investigated by XPS, AFM, Raman, FTIR spectroscopy, and nanoindenter. The tribological properties of the films were characterized on an UMT-2MT tribometer. The results demonstrated that the film became smoother and denser with increasing the applied bias voltage up to −200 V, whereas surface roughness increased due to the enhancement of ion bombardment as the applied bias voltage further increased. The sp3carbon fraction in the films monotonously decreased with increasing the applied bias voltage. The film exhibited moderate hardness and the superior tribological properties at the applied bias voltage of −100 V. The tribological behaviors are correlated to the H/E or H3/E2ratio of the films.

scholarly journals Laser-Induced Growth of Titanium Nitride Microcolumns on Biased Titanium Targets

2005 ◽  
Vol 20 (1) ◽  
pp. 62-67 ◽  
Author(s):  
E. György ◽  
A. Pérez del Pino ◽  
P. Serra ◽  
J.L. Morenza
Keyword(s):  
Bias Voltage ◽  
Single Pulse ◽  
Laser Pulses ◽  
High Repetition Rate ◽  
Applied Bias ◽  
Applied Bias Voltage ◽  
Surface Microrelief ◽  
High Repetition ◽  
Melting Threshold ◽  
Biased Samples

Titanium targets with a bias voltage ranging from −500 to +500 V were submitted to multipulse high repetition rate Nd:yttrium aluminum garnet (YAG; λ = 1.064 μm, τ ∼ 300 ns, ν = 30 kHz) laser irradiations in nitrogen at intensity values below the single-pulse melting threshold. The morphology of the TiN structures formed under the cumulative action of the laser pulses on the surface of the unbiased and biased targets was investigated by profilometry and scanning electron microscopy. Under these irradiation conditions, a specific columnar surface microrelief developed. The height of the microcolumns reached about 10–15 μm, and their diameter about 1–2 μm. The development of TiN microcolumns was enhanced by the applied bias voltage. The enhancement in the negative biased samples was stronger than that in the positive biased ones.

scholarly journals Current-Induced Spin Photocurrent in GaAs at Room Temperature

Sensors ◽  
2022 ◽  
Vol 22 (1) ◽  
pp. 399
Author(s):  
Yang Zhang ◽  
Yu Liu ◽  
Xiao-Lan Xue ◽  
Xiao-Lin Zeng ◽  
Jing Wu ◽  
...  
Keyword(s):  
Electric Field ◽  
Spin Polarization ◽  
Applied Electric Field ◽  
Room Temperature ◽  
Polarization Direction ◽  
Applied Bias ◽  
Applied Bias Voltage ◽  
Sample Plane ◽  
Bulk Gaas ◽  
Circularly Polarized

Circularly polarized photocurrent, observed in p-doped bulk GaAs, varies nonlinearly with the applied bias voltage at room temperature. It has been explored that this phenomenon arises from the current-induced spin polarization in GaAs. In addition, we found that the current-induced spin polarization direction of p-doped bulk GaAs grown in the (001) direction lies in the sample plane and is perpendicular to the applied electric field, which is the same as that in GaAs quantum well. This research indicates that circularly polarized photocurrent is a new optical approach to investigate the current-induced spin polarization at room temperature.

scholarly journals Interlayer Engineering of Flexible and Large Area Red Organic Light Emitting Diodes Based on a N-Annulated Perylene Diimide Dimer

2019 ◽  
Author(s):  
Mohammad Rahmati ◽  
Majid Pahlevani ◽  
Gregory Welch
Keyword(s):  
Red Light ◽  
Ambient Air ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Injection ◽  
Hole Transport Layer ◽  
Large Area ◽  
Average Roughness ◽  
Light Emitting ◽  
Slot Die

<p>Flexible red OLEDs based on a quadruple layer stack in-between electrodes with 160 mm<sup>2</sup> active area were fabricated in ambient air on PET via slot-die coating. For the OLED structure PET/ITO/PEDOT:PSS/PVK/PFO:tPDI<sub>2</sub>N-EH/ZnO/Ag the ink formulations and coating parameters for each layer were systematically evaluated and optimized. The air-stable red-light emitting material tPDI<sub>2</sub>N-EH was successfully utilized as blended homogeneous film with PFO for the emitting layer. The use of an organic hole-transport layer (PVK) and inorganic electron injection layer (ZnO) significantly improved the brightness of the reference device from 4 cd/m<sup>2</sup> to 303 cd/m<sup>2</sup>. Surface analysis using AFM measurements showed that PVK interlayer reduced the surface roughness of the hole injection layer (PEDT:PSS) from 0.45 nm to 0.17 nm, which improved the ability to form uniform emitting layers on top. In addition, the ZnO interlayer improved the average roughness of the device from 1.26 nm to 0.85 nm and reduced the turn-on voltage of the device from 5.0 V to 2.8 V.</p>

scholarly journals Регистрация терагерцового излучения с помощью наноструктур карбида кремния

2021 ◽  
Vol 55 (12) ◽  
pp. 1195
Author(s):  
Н.Т. Баграев ◽  
С.А. Кукушкин ◽  
А.В. Осипов ◽  
Л.Е. Клячкин ◽  
A.М. Маляренко ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Incident Radiation ◽  
Thz Radiation ◽  
Device Structure ◽  
Paramagnetic Resonance ◽  
Kinetic Dependence ◽  
Proposed Model ◽  
Source Current ◽  
Electron Paramagnetic ◽  
The Magnetic Field

The response to external terahertz (THz) radiation from the silicon carbide nanostructures prepared by the method of substitution of atoms on silicon is investigated. The kinetic dependence of the longitudinal voltage is recorded at room temperature by varying the drain-source current in the device structure performed in a Hall geometry. In the frameworks of proposed model based on the quantum Faraday effect the incident radiation results in the appearance of a generated current in the edge channels with a change in the number of magnetic flux quanta and in the appearance of features in the kinetic dependence of the longitudinal voltage. The generation of intrinsic terahertz radiation inside the silicon carbide nanostructures is also revealed by the electrically-detected electron paramagnetic resonance (EDEPR) measured the longitudinal voltage as a function of the magnetic field value.

scholarly journals Interlayer Engineering of Flexible and Large Area Red Organic Light Emitting Diodes Based on a N-Annulated Perylene Diimide Dimer

2019 ◽  
Author(s):  
Mohammad Rahmati ◽  
Majid Pahlevani ◽  
Gregory Welch
Keyword(s):  
Red Light ◽  
Ambient Air ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Injection ◽  
Hole Transport Layer ◽  
Large Area ◽  
Average Roughness ◽  
Light Emitting ◽  
Slot Die

<p>Flexible red OLEDs based on a quadruple layer stack in-between electrodes with 160 mm<sup>2</sup> active area were fabricated in ambient air on PET via slot-die coating. For the OLED structure PET/ITO/PEDOT:PSS/PVK/PFO:tPDI<sub>2</sub>N-EH/ZnO/Ag the ink formulations and coating parameters for each layer were systematically evaluated and optimized. The air-stable red-light emitting material tPDI<sub>2</sub>N-EH was successfully utilized as blended homogeneous film with PFO for the emitting layer. The use of an organic hole-transport layer (PVK) and inorganic electron injection layer (ZnO) significantly improved the brightness of the reference device from 4 cd/m<sup>2</sup> to 303 cd/m<sup>2</sup>. Surface analysis using AFM measurements showed that PVK interlayer reduced the surface roughness of the hole injection layer (PEDT:PSS) from 0.45 nm to 0.17 nm, which improved the ability to form uniform emitting layers on top. In addition, the ZnO interlayer improved the average roughness of the device from 1.26 nm to 0.85 nm and reduced the turn-on voltage of the device from 5.0 V to 2.8 V.</p>

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