scholarly journals A Large Measurable Range Capacitance-to-Digital Converter for Smart Humidity Sensors

Micromachines ◽  
2019 ◽  
Vol 10 (9) ◽  
pp. 561
Author(s):  
Rongshan Wei ◽  
Weiwen Lin ◽  
Xiaoxia Xiao ◽  
Qunchao Chen ◽  
Fanyang Li
Keyword(s):  
Humidity Sensor ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Digital Converter ◽  
Third Order ◽  
Digital Conversion ◽  
Sigma Delta Modulator ◽  
Sigma Delta ◽  
Input Range ◽  
Measurable Range

This study aims to propose a capacitance-to-digital converter (CDC) based on a third-order cascade of integrators with a feed-forward (CIFF) incremental sigma-delta modulator for smart humidity sensor application. Disguised zoom-in technology was proposed to enlarge the measurable range of the CDC. The input range of the CDC was 0–388 pF. The proposed CDC was realized using 0.18 μm complementary metal-oxide-semiconductor technology. Results show that the CDC performs a 13-bit capacitance-to-digital conversion in 0.8 ms. The analog system consumes 169.7 μA from a 1.8 V supply, which corresponds to a figure of merit (FOM) of 3.0 nJ/step. The proposed CDC was combined with a HS1101 humidity sensor to demonstrate its incorporation in an overall system design. The resolution was 0.7% relative humidity (RH) over a range of 30%–90% RH.

Stable boundaries of a third-order sigma-delta modulator

2003 ◽  
Author(s):  
J. Zhang ◽  
P.V. Brennan ◽  
D. Jiang ◽  
E. Vinogradova ◽  
P.D. Smith
Keyword(s):  
Third Order ◽  
Sigma Delta Modulator ◽  
Sigma Delta

On-Chip Touch Sensor Readout Circuit Using Passive Sigma-Delta Modulator Capacitance-to-Digital Converter

2015 ◽  
Vol 15 (7) ◽  
pp. 3893-3902 ◽  
Author(s):  
Bo Liu ◽  
Zaniar Hoseini ◽  
Kye-Shin Lee ◽  
Yong-Min Lee
Keyword(s):  
Readout Circuit ◽  
Digital Converter ◽  
Sigma Delta Modulator ◽  
Sigma Delta ◽  
Touch Sensor ◽  
On Chip

Design of Third-Order Single-Loop Full Feed-Forward Sigma Delta Modulator

2014 ◽  
Vol 609-610 ◽  
pp. 1176-1180
Author(s):  
Liang Liu ◽  
Song Chen ◽  
Chong He ◽  
Liang Yin ◽  
Xiao Wei Liu
Keyword(s):  
Model Building ◽  
Inertial Sensors ◽  
Sampling Rate ◽  
Third Order ◽  
Sigma Delta Modulator ◽  
Sigma Delta ◽  
Feed Forward ◽  
Single Loop ◽  
Local Feedback ◽  
Sigma Delta Adc

Sigma Delta modulator is widely used in ADC for kinds of micro inertial sensors, Sigma Delta ADC can be easily integrated with digital circuits. It possesses some performances of good linearity and high accuracy, while it has no such strict requirements for the match of device dimensions. In this paper, the design of third-order Sigma Delta modulator with a structure of single-loop full feed-forward is accomplished, meanwhile it uses local feedback for zero optimization to improve the shaping capacity of the modulator noise within the signal bandwidth. The OSR (over-sampling rate) of the modulator is 128 and the signal bandwidth is 10 kHz. By the system model building and simulation in the Simulink of MATALAB, the SNR is 96.3 dB and the ENOB is 15.71 bits. Then the modulator is implemented into transistor-level circuits with 0.5um process, by the simulation in Spectre of Cadence, the SNR is 88.5 dB and the ENOB is 14.41 bits. 搜

A 20-MHz BW MASH Sigma–Delta Modulator with Mismatch Noise Randomization for Multi-Bit DACs

2019 ◽  
Vol 29 (07) ◽  
pp. 2050108
Author(s):  
Di Li ◽  
Chunlong Fei ◽  
Qidong Zhang ◽  
Yani Li ◽  
Yintang Yang
Keyword(s):  
Dynamic Range ◽  
Sampling Rate ◽  
Oxide Semiconductor ◽  
Quantization Noise ◽  
Cmos Process ◽  
Noise Shaping ◽  
Signal To Noise ◽  
Sigma Delta Modulator ◽  
Sigma Delta ◽  
Chip Area

A high-linearity Multi-stAge noise SHaping (MASH) 2–2–2 sigma–delta modulator (SDM) for 20-MHz signal bandwidth (BW) was presented. Multi-bit quantizers were employed in each stage to provide a sufficiently low quantization noise level and thus improve the signal-to-noise ratio (SNR) performance of the modulator. Mismatch noise in the internal multi-bit digital-to-analog converters (DACs) was analyzed in detail, and an alternative randomization scheme based on multi-layer butterfly-type network was proposed to suppress spurious tones in the output spectrum. Fabricated in a 0.18-[Formula: see text]m single–poly 4-metal Complementary Metal Oxide Semiconductor (CMOS) process, the modulator occupied a chip area of 0.45[Formula: see text]mm2, and dissipated a power of 28.8[Formula: see text]mW from a 1.8-V power supply at a sampling rate of 320[Formula: see text]MHz. The measured spurious-free dynamic range (SFDR) was 94[Formula: see text]dB where 17-dB improvement was achieved by applying the randomizers for multi-bit DACs in the first two stages. The peak signal-to-noise and distortion ratio (SNDR) was 76.9[Formula: see text]dB at [Formula: see text]1 dBFS @ 2.5-MHz input, and the figure-of-merit (FOM) was 126[Formula: see text]pJ/conv.

scholarly journals Radiation Assessment of a 15.6ps Single-Shot Time-to-Digital Converter in Terms of TID

Electronics ◽  
2019 ◽  
Vol 8 (5) ◽  
pp. 558 ◽  
Author(s):  
Bjorn Van Bockel ◽  
Jeffrey Prinzie ◽  
Paul Leroux
Keyword(s):  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Ring Oscillator ◽  
Oxide Semiconductor ◽  
Single Shot ◽  
Digital Converter ◽  
Time To Digital Converter ◽  
Pvt Variations ◽  
Radiation Tolerant ◽  
Radiation Measurements

This article presents a radiation tolerant single-shot time-to-digital converter (TDC) with a resolution of 15.6 ps, fabricated in a 65 nm complementary metal oxide semiconductor (CMOS) technology. The TDC is based on a multipath pseudo differential ring oscillator with reduced phase delay, without the need for calibration or interpolation. The ring oscillator is placed inside a Phase Locked Loop (PLL) to compensate for Process, Voltage and Temperature (PVT) variations- and variations due to ionizing radiation. Measurements to evaluate the performance of the TDC in terms of the total ionizing dose (TID) were done. Two different samples were irradiated up to a dose of 2.2 MGy SiO 2 while still maintaining a resolution of 15.6 ps. The TDC has a differential non-linearity (DNL) and integral non-linearity (INL) of 0.22 LSB rms and 0.34 LSB rms respectively.

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