scholarly journals Moiré-Based Alignment Using Centrosymmetric Grating Marks for High-Precision Wafer Bonding

Micromachines ◽  
2019 ◽  
Vol 10 (5) ◽  
pp. 339 ◽  
Author(s):  
Boyan Huang ◽  
Chenxi Wang ◽  
Hui Fang ◽  
Shicheng Zhou ◽  
Tadatomo Suga
Keyword(s):  
High Precision ◽  
Wafer Bonding ◽  
Alignment Accuracy ◽  
Heterogeneous Integration ◽  
Alignment Method ◽  
Wafer Level ◽  
Bonding System ◽  
Alignment System ◽  
Working Principle ◽  
Better Than

High-precision aligned wafer bonding is essential to heterogeneous integration, with the device dimension reduced continuously. To get the alignment more accurately and conveniently, we propose a moiré-based alignment method using centrosymmetric grating marks. This method enables both coarse and fine alignment steps without requiring additional conventional cross-and-box alignment marks. Combined with an aligned wafer bonding system, alignment accuracy better than 300 nm (3σ) was achieved after bonding. Furthermore, the working principle of the moiré-based alignment for the backside alignment system was proposed to overcome the difficulty in bonding of opaque wafers. We believe this higher alignment accuracy is feasible to satisfy more demanding requirements in wafer-level stacking technologies.

High Precision Low Temperature Direct Wafer Bonding Technology for Wafer-Level 3D ICs Manufacturing

2016 ◽  
Vol 75 (9) ◽  
pp. 345-353 ◽  
Author(s):  
F. Kurz ◽  
T. Plach ◽  
J. Suss ◽  
T. Wagenleitner ◽  
D. Zinner ◽  
...  
Keyword(s):  
Low Temperature ◽  
High Precision ◽  
Wafer Bonding ◽  
Wafer Level ◽  
3D Ics ◽  
Direct Wafer Bonding ◽  
Bonding Technology

Effects of Bonding Process Parameters on Wafer-to-Wafer Alignment Accuracy in Benzocyclobutene (BCB) Dielectric Wafer Bonding

2005 ◽  
Vol 863 ◽  
Author(s):  
F. Niklaus ◽  
R.J. Kumar ◽  
J.J. McMahon ◽  
J. Yu ◽  
T. Matthias ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Layer Thickness ◽  
Wafer Bonding ◽  
Three Dimensional ◽  
Bonding Process ◽  
Alignment Accuracy ◽  
Wafer Level ◽  
Bonding Parameters ◽  
Wafer Pair ◽  
The Impact

AbstractWafer-level three-dimensional (3D) integration is an emerging technology to increase the performance and functionality of integrated circuits (ICs). Aligned wafer-to-wafer bonding with dielectric polymer layers (e.g., benzocyclobutene (BCB)) is a promising approach for manufacturing of 3D ICs, with minimum bonding impact on the wafer-to-wafer alignment accuracy essential. In this paper we investigate the effects of thermal and mechanical bonding parameters on the achievable post-bonding wafer-to-wafer alignment accuracy for polymer wafer bonding with 200 mm diameter wafers. Our baseline wafer bonding process with softbaked BCB (∼35% cross-linked) has been modified to use partially cured (∼ 43% crosslinked) BCB. The partially cured BCB layer does not reflow during bonding, minimizing the impact of inhomogeneities in BCB reflow under compression and/or slight shear forces at the bonding interface. As a result, the non-uniformity of the BCB layer thickness after wafer bonding is less than 0.5% of the nominal layer thickness and the wafer shift relative to each other during the wafer bonding process is less than 1 μm (average) for 200 mm diameter wafers. The critical adhesion energy of a bonded wafer pair with the partially cured BCB wafer bonding process is similar to that with soft-baked BCB.

High-precision wafer-level Cu-Cu bonding for 3DICs

2014 ◽  
Author(s):  
Masashi Okada ◽  
Isao Sugaya ◽  
Hajime Mitsuishi ◽  
Hidehiro Maeda ◽  
Toshimasa Shimoda ◽  
...  
Keyword(s):  
High Precision ◽  
Wafer Level ◽  
Cu Bonding

A Precision Alignment Method to <100> Direction on (110) Silicon Wafer

2001 ◽  
Author(s):  
Fan-Gang Tseng ◽  
Kai-Chen Chang
Keyword(s):  
Silicon Wafer ◽  
Crystal Orientation ◽  
Silicon Wafers ◽  
Innovative Approach ◽  
Alignment Accuracy ◽  
Alignment Method

Abstract This paper proposes a novel pre-etch method to determine the lt;100gt; direction on (110) silicon wafers for bulk etching. Series of circular windows were arranged in an arc of radius 48.9 mm, and bulk-etched to form hexagonal shapes for crystal orientation finding. The corners of the hexagons can be used as an alignment reference for the indication of the lt;100gt; direction on (110) silicon wafers. This innovative approach has been demonstrated experimentally to give an orientation-alignment accuracy of ± 0.03° for (110) wafers with 4-inch diameter.

Effect of Mechanical Alignment System on Assembly Accuracy

2000 ◽  
Author(s):  
Neville K. S. Lee ◽  
Grace H. Yu ◽  
Y. Zou ◽  
J. Y. Chen ◽  
Ajay Joneja
Keyword(s):  
Alignment Accuracy ◽  
Mechanical Alignment ◽  
Mechanical Assembly ◽  
Surface Waviness ◽  
Form Errors ◽  
Multi Stage ◽  
Assembly Accuracy ◽  
Alignment System ◽  
Simulation Based ◽  
Selection Of

Abstract Mechanical means of positioning are frequently used in mechanical assembly processes. However, very little attention has been paid to the selection of mechanical alignment systems (MAS) for assembly processes. Our analysis shows that if the MAS are not properly selected, the form errors as well surface waviness and roughness of the workpieces to be assembled can badly limit the level of accuracy achievable. A simulation-based methodology is described to study the alignment accuracy for multi-stage processes. Such cases are common, where fabrication operations are done on parts before they are assembled. The study shows that if the workpieces are aligned in the same orientation, using similar or identical MAS for the fabrication processes and assembly processes, then the effect of the form errors as well as surface waviness and roughness of the workpieces can be greatly suppressed.

(Invited) High Accuracy Aligned Wafer Bonding for Wafer-Level Integration

2018 ◽  
Vol 86 (5) ◽  
pp. 145-158 ◽  
Author(s):  
Thomas Plach ◽  
Bernhard Rebhan ◽  
Viorel Dragoi ◽  
Thomas Wagenleitner ◽  
Markus Wimplinger ◽  
...  
Keyword(s):  
Wafer Bonding ◽  
High Accuracy ◽  
Wafer Level

Void-free BCB adhesive wafer bonding with high alignment accuracy

2014 ◽  
Vol 21 (8) ◽  
pp. 1633-1641 ◽  
Author(s):  
Zhen Song ◽  
Zhimin Tan ◽  
Litian Liu ◽  
Zheyao Wang
Keyword(s):  
Wafer Bonding ◽  
Alignment Accuracy
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