scholarly journals Enhancement of Light Extraction Efficiency for InGaN/GaN Light-Emitting Diodes Using Silver Nanoparticle Embedded ZnO Thin Films

Micromachines ◽  
2019 ◽  
Vol 10 (4) ◽  
pp. 239 ◽  
Author(s):  
Lei ◽  
Yang ◽  
Huang ◽  
Yeh
Keyword(s):  
Thin Film ◽  
Silver Nanoparticle ◽  
Surface Texture ◽  
Extraction Efficiency ◽  
Light Extraction ◽  
Window Layer ◽  
Light Extraction Efficiency ◽  
Zno Thin Film ◽  
Light Emitting ◽  
Gan Led

In this study, we propose a liquid-phase-deposited silver nanoparticle embedded ZnO (LPD-Ag NP/ZnO) thin film at room temperature to improve the light extraction efficiency (LEE) for InGaN/GaN light-emitting diodes (LEDs). The treatment solution for the deposition of the LPD-Ag/NP ZnO thin film comprised a ZnO-powder-saturated HCl and a silver nitrate (AgNO3) aqueous solution. The enhanced LEE of an InGaN/GaN LED with the LPD-Ag NP/ZnO window layer can be attributed to the surface texture and localized surface plasmon (LSP) coupling effect. The surface texture of the LPD-Ag/NP ZnO window layer relies on the AgNO3 concentration, which decides the root-mean-square (RMS) roughness of the thin film. The LSP resonance or extinction wavelength also depends on the concentration of AgNO3, which determines the Ag NP size and content of Ag atoms in the LPD-Ag NP/ZnO thin film. The AgNO3 concentration for the optimal LEE of an InGaN/GaN LED with an LPD-Ag NP/ZnO window layer occurs at 0.05 M, which demonstrates an increased light output intensity that is approximately 1.52 times that of a conventional InGaN/GaN LED under a 20-mA driving current.

Analytical Calculation of the Light Extraction Efficiency of Micro Cavities Light-Emitting Diodes

2007 ◽  
Vol 364-366 ◽  
pp. 98-103
Author(s):  
Paul C.P. Chao ◽  
Lun De Liao ◽  
Yi Hua Fan ◽  
Chien Yu Shen ◽  
Yung Yuan Kao ◽  
...  
Keyword(s):  
Extraction Efficiency ◽  
Substrate Surface ◽  
Surface Texturing ◽  
Three Dimensional ◽  
Analytical Calculation ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Light Emitting ◽  
Gan Led ◽  
Micro Cavity

Using TracePro® Monte-Carlo ray-tracing simulations, this paper investigates the improved light extraction efficiency (LEE) obtained by patterning the surface and/or substrate of GaN LEDs with unique three-dimensional micro-cavity patterns. The simulations commence by considering the case of a sapphire-based GaN LED. The effects on the LEE of the micro-cavity dimensions, the absorption coefficient of the active layer, the point source location, and the chip dimensions are systematically examined. Subsequently, the LEE performance of the sapphire-based GaN LED is compared with that of a thin-GaN LED for various surface texturing strategies. In general, the results show that patterning either the surface or the substrate of the LED structure provides an effective improvement in the LEE of both the sapphire-based GaN LED and the thin- GaN LED. For both LED structures, the maximum LEE enhancement is obtained by patterning both the upper surface of the LED and the substrate surface. However, the simulation results indicate that the improvement obtained in the LEE is the result primarily of pattering the upper surface of the LED.

Enhanced light extraction efficiency from AlGaInP thin-film light-emitting diodes with photonic crystals

2008 ◽  
Vol 93 (4) ◽  
pp. 041105 ◽  
Author(s):  
K. Bergenek ◽  
Ch. Wiesmann ◽  
R. Wirth ◽  
L. O’Faolain ◽  
N. Linder ◽  
...  
Keyword(s):  
Thin Film ◽  
Photonic Crystals ◽  
Light Emitting Diodes ◽  
Extraction Efficiency ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Light Emitting
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