Analysis on the effect of amorphous photonic crystals on light extraction efficiency enhancement for GaN-based thin-film-flip-chip light-emitting diodes

2016 ◽  
Vol 367 ◽  
pp. 72-79 ◽  
Author(s):  
Qingyang Yue ◽  
Kang Li ◽  
Fanmin Kong ◽  
Jia Zhao ◽  
Meng Liu
Keyword(s):  
Thin Film ◽  
Photonic Crystals ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Extraction Efficiency ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Efficiency Enhancement ◽  
Light Emitting

Enhanced light extraction efficiency from AlGaInP thin-film light-emitting diodes with photonic crystals

2008 ◽  
Vol 93 (4) ◽  
pp. 041105 ◽  
Author(s):  
K. Bergenek ◽  
Ch. Wiesmann ◽  
R. Wirth ◽  
L. O’Faolain ◽  
N. Linder ◽  
...  
Keyword(s):  
Thin Film ◽  
Photonic Crystals ◽  
Light Emitting Diodes ◽  
Extraction Efficiency ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Light Emitting

Analysis of the Light-Extraction Efficiency of Flip-Chip Deep-Ultraviolet Light-Emitting Diodes with Embedded Photonic Crystals

2021 ◽  
Vol 16 (4) ◽  
pp. 591-596
Author(s):  
Meng Liu ◽  
Xuan Zheng ◽  
Wenfei Liu ◽  
Juan Li ◽  
Wenjing Wang ◽  
...  
Keyword(s):  
Photonic Crystals ◽  
Ultraviolet Light ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Extraction Efficiency ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

In the present study, embedded photonic crystals were introduced into the p-GaN contact layer of light-emitting diodes to increase the light-extraction efficiency of flip-chip deep-ultraviolet light-emitting diodes. As demonstrated by performing three-dimensional finite-difference time domain simulation, the embedded photonic crystals could be designed to increase the total reflectivity on the p-GaN contact layer, thereby increasing the light-extraction efficiency. In addition, the effects of the embedded photonic crystals configurations on the light-extraction efficiency of deep-ultraviolet light-emitting diodes were examined. Light-extraction efficiency over 21% for transverse magnetic polarized emission could be generally expected by rigorously optimizing the active layer position, as well as the depth, period, and filling factor of photonic crystals. Moreover, an investigation was conducted on the light-extraction efficiency over the whole ultraviolet spectrum, and more light-extraction efficiency harvest on a broadband ultraviolet spectrum has been achieved as compared with flip-chip planar deep-ultraviolet light-emitting diodes. The optimized structure will be promising for increasing the light-extraction efficiency of AlGaN-based flip-chip deep-ultraviolet light-emitting diodes.

Light extraction efficiency enhancement of CH3NH3PbBr3 light-emitting diodes using nanopatterned PEDOT:PSS layers

2021 ◽  
Vol 119 (23) ◽  
pp. 233302
Author(s):  
Shukun Weng ◽  
Min Sun ◽  
Liping Zhang ◽  
Lubing Jiang ◽  
Chao Shi ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Extraction Efficiency ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Efficiency Enhancement ◽  
Light Emitting

scholarly journals Study on Modulation Bandwidth and Light Extraction Efficiency of Flip-Chip Light-Emitting Diode with Photonic Crystals

Micromachines ◽  
2019 ◽  
Vol 10 (11) ◽  
pp. 767 ◽  
Author(s):  
Hong Wang ◽  
Ming Zhong ◽  
Lijun Tan ◽  
Wei Shi ◽  
Quanbin Zhou
Keyword(s):  
Photonic Crystal ◽  
Photonic Crystals ◽  
Flip Chip ◽  
Extraction Efficiency ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Experimental Result ◽  
Modulation Bandwidth ◽  
Light Emitting ◽  
Current Densities

In this study, the photonic crystal structure is employed to increase both the light extraction efficiency and the modulation bandwidth of flip-chip GaN-based light-emitting diodes (LEDs). The finite difference time domain method is utilized to investigate the influence of structure of photonic crystals on the Purcell factor and light extraction efficiency of flip-chip GaN-based LEDs. Simulation results show that the modulation bandwidth is estimated to be 202 MHz at current densities of 1000 A/cm2. The experimental result of modulation bandwidth is in accord with the simulation. The optical f-3dB of the device achieves 212 MHz at current densities of 1000 A/cm2 and up to 285 MHz at current densities of 2000 A/cm2. This design of photonic crystal flip-chip LED has the potential for applications in high-frequency visible light communication.

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