scholarly journals Atomistic Simulations to Predict Favored Glass-Formation Composition and Ion-Beam-Mixing of Nano-Multiple-Metal-Layers to Produce Ternary Amorphous Films

Metals ◽  
2018 ◽  
Vol 8 (2) ◽  
pp. 129 ◽  
Author(s):  
◽  
◽  
◽  
Keyword(s):  
Glass Formation ◽  
Ion Beam ◽  
Atomistic Simulations ◽  
Amorphous Films ◽  
Ion Beam Mixing ◽  
Metal Layers

Ion beam mixing to study the metallic glass formation of the Cu–Zr system

2010 ◽  
Vol 64 (1) ◽  
pp. 96-98 ◽  
Author(s):  
T.L. Wang ◽  
W.T. Huang ◽  
W.C. Wang ◽  
B.X. Liu
Keyword(s):  
Metallic Glass ◽  
Glass Formation ◽  
Ion Beam ◽  
Ion Beam Mixing

On metallic glass formation in CuNb by ion beam mixing

1989 ◽  
Vol 115 ◽  
pp. 123-126 ◽  
Author(s):  
L.-U Aaen Andersen ◽  
J Bøttiger ◽  
K Dyrbye
Keyword(s):  
Metallic Glass ◽  
Glass Formation ◽  
Ion Beam ◽  
Ion Beam Mixing

Ion-beam mixing and thermal annealing of Al–Nb and Al–Ta thin films

1988 ◽  
Vol 3 (6) ◽  
pp. 1082-1088 ◽  
Author(s):  
A. K. Rai ◽  
R. S. Bhattacharya ◽  
M. G. Mendiratta ◽  
P. R. Subramanian ◽  
D. M. Dimiduk
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Phase Formation ◽  
Ion Beam ◽  
Amorphous Films ◽  
Individual Layer ◽  
Ion Beam Mixing ◽  
Partial Reaction ◽  
Complete Reaction ◽  
The Individual

Ion-beam mixing and thermal annealing of thin, alternating layers of Al and Nb, as well as Al and Ta, were investigated by selected area diffraction and Rutherford backscattcring. The individual layer thicknesses were adjusted to obtain the overall compositions as Al3Nb and Al3Ta. The films were ion mixed with 1 MeV Au+ ions at a dose of 1 × 1016 ions cm−2. Uniform mixing and amorphization were achieved for both Al−Nb and Al−Ta systems. Equilibrium crystalline A13Nb and Al13Ta phases were formed after annealing of ion mixed amorphous films at 400 °C for 1 h. Unmixed films, however, remained unreacted at 400 °C for 1 h. Partial reaction was observed in the unmixed film of Al–Nb at 400 °C for 6 h. After annealing at 500 °C for 1 h, a complete reaction and formation of Al3Nb and Al3Ta phases in the respective films were observed. The influence of thermodynamics on the phase formation by ion mixing and thermal annealing is discussed.

Electrical properties of AlMn amorphous films formed by ion beam mixing

Vacuum ◽  
1989 ◽  
Vol 39 (2-4) ◽  
pp. 251-253 ◽  
Author(s):  
Xiangjun Fan ◽  
Huaixi Guo ◽  
Shuqi Wang ◽  
Quanhua Yu ◽  
Chengming Tian
Keyword(s):  
Electrical Properties ◽  
Ion Beam ◽  
Amorphous Films ◽  
Ion Beam Mixing

Proposed correlation of glass formation ability with critical dosage for the amorphous alloys formed by ion beam mixing

RSC Advances ◽  
2015 ◽  
Vol 5 (21) ◽  
pp. 16400-16404 ◽  
Author(s):  
M. H. Yang ◽  
J. H. Li ◽  
B. X. Liu
Keyword(s):  
Negative Correlation ◽  
Glass Formation ◽  
Amorphous Alloys ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Glass Formation Ability

A negative correlation of glass formation ability (GFA) with the critical dosage (Dc) is first proposed for amorphous alloys formed by ion beam mixing (IBM), i.e. the lower the Dc the better the GFA, implying that Dc could serve as a GFA indicator.

Metallic glass formation in the ternary Ni-Nb-Mo system by ion beam mixing

2012 ◽  
Vol 55 (8) ◽  
pp. 2206-2211 ◽  
Author(s):  
Yang Li ◽  
TongLe Wang ◽  
Ning Ding ◽  
JianBo Liu ◽  
BaiXin Liu
Keyword(s):  
Metallic Glass ◽  
Glass Formation ◽  
Ion Beam ◽  
Ion Beam Mixing

Ion Beam Mixing of Ni-Ti Bilayered Thin Films

1985 ◽  
Vol 43 ◽  
pp. 290-291
Author(s):  
A. K. Rai ◽  
R. S. Bhattacharya ◽  
M. H. Rashid
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Amorphous Alloys ◽  
Ion Beam ◽  
Ion Bombardment ◽  
High Energy ◽  
Mixing Efficiency ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Binary Metal

Ion beam mixing has recently been found to be an effective method of producing amorphous alloys in the binary metal systems where the two original constituent metals are of different crystal structure. The mechanism of ion beam mixing are not well understood yet. Several mechanisms have been proposed to account for the observed mixing phenomena. The first mechanism is enhanced diffusion due to defects created by the incoming ions. Second is the cascade mixing mechanism for which the kinematicel collisional models exist in the literature. Third mechanism is thermal spikes. In the present work we have studied the mixing efficiency and ion beam induced amorphisation of Ni-Ti system under high energy ion bombardment and the results are compared with collisional models. We have employed plan and x-sectional veiw TEM and RBS techniques in the present work.

Automatic Determination of Optimal FIB Operations for Improved Circuit Probing and Fast Reconfiguration

2000 ◽  
Author(s):  
Romain Desplats ◽  
Timothee Dargnies ◽  
Jean-Christophe Courrege ◽  
Philippe Perdu ◽  
Jean-Louis Noullet
Keyword(s):  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Devices ◽  
Front Side ◽  
Automatic Determination ◽  
Metal Line ◽  
New Approach ◽  
Metal Layers

Abstract Focused Ion Beam (FIB) tools are widely used for Integrated Circuit (IC) debug and repair. With the increasing density of recent semiconductor devices, FIB operations are increasingly challenged, requiring access through 4 or more metal layers to reach a metal line of interest. In some cases, accessibility from the front side, through these metal layers, is so limited that backside FIB operations appear to be the most appropriate approach. The questions to be resolved before starting frontside or backside FIB operations on a device are: 1. Is it do-able, are the metal lines accessible? 2. What is the optimal positioning (e.g. accessing a metal 2 line is much faster and easier than digging down to a metal 6 line)? (for the backside) 3. What risk, time and cost are involved in FIB operations? In this paper, we will present a new approach, which allows the FIB user or designer to calculate the optimal FIB operation for debug and IC repair. It automatically selects the fastest and easiest milling and deposition FIB operations.

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