scholarly journals Improving the W Coating Uniformity by a COMSOL Model-Based CVD Parameter Study for Denser Wf/W Composites

Metals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1089
Author(s):  
Leonard Raumann ◽  
Jan Willem Coenen ◽  
Johann Riesch ◽  
Yiran Mao ◽  
Daniel Schwalenberg ◽  
...  
Keyword(s):  
Relative Density ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Process Time ◽  
Parameter Study ◽  
Reactor Model ◽  
Production Route ◽  
Coating Uniformity ◽  
Hydrogen Retention ◽  
Return Lead

Tungsten (W) has the unique combination of excellent thermal properties, low sputter yield, low hydrogen retention, and acceptable activation. Therefore, W is presently the main candidate for the first wall and armor material for future fusion devices. However, its intrinsic brittleness and its embrittlement during operation bears the risk of a sudden and catastrophic component failure. As a countermeasure, tungsten fiber-reinforced tungsten (Wf/W) composites exhibiting extrinsic toughening are being developed. A possible Wf/W production route is chemical vapor deposition (CVD) by reducing WF6 with H2 on heated W fabrics. The challenge here is that the growing CVD-W can seal gaseous domains leading to strength reducing pores. In previous work, CVD models for Wf/W synthesis were developed with COMSOL Multiphysics and validated experimentally. In the present article, these models were applied to conduct a parameter study to optimize the coating uniformity, the relative density, the WF6 demand, and the process time. A low temperature and a low total pressure increase the process time, but in return lead to very uniform W layers at the micro and macro scales and thus to an optimized relative density of the Wf/W composite. High H2 and low WF6 gas flow rates lead to a slightly shorter process time and an improved coating uniformity as long as WF6 is not depleted, which can be avoided by applying the presented reactor model.

Dépôt chimique en phase vapeur et à basse pression de couches minces à base de silicium dans un réacteur à lampes halogène

2000 ◽  
Vol 77 (9) ◽  
pp. 737-743
Author(s):  
B Semmache ◽  
S Kallel ◽  
H El Omari ◽  
M Lemiti ◽  
A Laugier
Keyword(s):  
Thin Films ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Environmental Safety ◽  
Device Fabrication ◽  
Process Time ◽  
Halogen Lamp ◽  
New Device ◽  
Si Films ◽  
Silicon Based

Low-pressure chemical vapor deposition (LPCVD) in halogen lamp-heated reactor (RTLPCVD: rapid thermal LPCVD) is a promising technique for silicon-based thin films deposition. Indeed, overall process time and gas consumption reduction in RTP reactors allows to project new device fabrication technologies (microsensors, solar cells) in order to reach a higher environmental safety with respect to classical technologies.Various gases available on our RTP installation (SiH4, NH3, N2O, O2, PH3, B2H6) enable several silicon-based thin films RTLPCVD deposition: intrinsic polycrystalline silicon (poly-Si) films or in situ doped poly-Si, silicon nitride (Si-N) and oxynitride (Si-O-N). In this paper, we discuss our results on deposition kinetics and physical properties of these thin films. It appeared that RTLPCVD silicon-based thin films with interesting structural, electrical, and optical properties can be synthesized in our lamp-heated reactor with a tight control of process parameters such as temperature, pressure, and gas flow ratios.

Heat and Mass Transfer in a CVD Optical Fiber Coating Process

Volume 3 ◽  
2004 ◽  
Author(s):  
Wei Huang ◽  
Wilson K. S. Chiu
Keyword(s):  
Heat Transfer ◽  
Optical Fiber ◽  
Reaction Kinetics ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Parameter Study ◽  
Inlet Temperature ◽  
Transfer Model ◽  
Phase Reaction ◽  
Empirical Parameter

In this paper, we study the chemical vapor deposition (CVD) process used to hermetically coat optical fibers during draw. Temperature is calculated by coupling radiation and convection heat transfer by the reactor walls and gas flow with a radially-lumped heat transfer model for the moving optical fiber. Multi-component species diffusion is modeled using the Maxwell-Stefan equations. Gas-phase reaction kinetics is modeled using a 2-step chemical kinetics mechanism derived from RRKM theory with detailed kinetics data compiled from literature. Surface reaction kinetics are described using collision theory in which a sticking coefficient is used as an empirical parameter to predict surface reactions. A parameter study is carried out with various optical fiber inlet temperature and drawing speed, and validated with experiment results.

Analysis of plasma for carbon nanotube growth by plasma-enhanced chemical vapor deposition

2005 ◽  
Vol 901 ◽  
Author(s):  
Atsushi Ozeki ◽  
Yoshiyuki Suda ◽  
Atsushi Okita ◽  
Junji Nakamura ◽  
Akinori Oda ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Relative Density ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Catalyst Support ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
Number Density ◽  
Support Materials

AbstractOptical emission spectra of a CH4/H2/Ar gas mixture plasma were observed during carbon nanotube (CNT) growth in RF plasma-enhanced chemical vapor deposition. CNTs with diameters of ∼10-30 nm and length of ∼6 μm were grown on double- and triple-layered films of catalyst/support materials (FexOy/TiO2 and Al2O3/FexOy/Al2O3) at the total gas pressures of 1-10 Torr with gas flow rates of CH4 = 27 sccm, H2 = 3 sccm, and Ar = 1 sccm. The number density of CNTs increased with the gas pressure, and Al2O3/FexOy/Al2O3 (each thickness of 1 nm) film yielded the thinnest CNTs with a high number density among the present catalysts. The spatial distributions of H atom relative density in the plasma were obtained by actinometry. The H relative density decreased with the pressure, and this suggests the suppression of CH3 radical generation in the plasma.

TEM evaluation of graded SixGe1-x heterolayers

1991 ◽  
Vol 49 ◽  
pp. 894-895
Author(s):  
N. David Theodore ◽  
Mamoru Tomozane ◽  
Ming Liaw
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Gas Flow ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Dark Field ◽  
Bipolar Transistors ◽  
Structural Quality ◽  
Weak Beam ◽  
Transmission Electron ◽  
And Behavior

There is extensive interest in SiGe for use in heterojunction bipolar transistors. SiGe/Si superlattices are also of interest because of their potential for use in infrared detectors and field-effect transistors. The processing required for these materials is quite compatible with existing silicon technology. However, before SiGe can be used extensively for devices, there is a need to understand and then control the origin and behavior of defects in the materials. The present study was aimed at investigating the structural quality of, and the behavior of defects in, graded SiGe layers grown by chemical vapor deposition (CVD).The structures investigated in this study consisted of Si1-xGex[x=0.16]/Si1-xGex[x= 0.14, 0.13, 0.12, 0.10, 0.09, 0.07, 0.05, 0.04, 0.005, 0]/epi-Si/substrate heterolayers grown by CVD. The Si1-xGex layers were isochronally grown [t = 0.4 minutes per layer], with gas-flow rates being adjusted to control composition. Cross-section TEM specimens were prepared in the 110 geometry. These were then analyzed using two-beam bright-field, dark-field and weak-beam images. A JEOL JEM 200CX transmission electron microscope was used, operating at 200 kV.

Effect of Temperature and Gas Flow on Bi2Se3 Nanoplates Grown by Chemical Vapor Deposition

2018 ◽  
Vol 18 (11) ◽  
pp. 7590-7594 ◽  
Author(s):  
Peng Gu ◽  
Jinling Yu ◽  
Xiaolin Zeng ◽  
Shuying Cheng ◽  
Yunfeng Lai ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Effect Of Temperature

Hydrogen Concentration Analysis in Pecvd and Rtcvd Silicon Nitride Thin Films and It's Impact on Device Performance

2001 ◽  
Vol 664 ◽  
Author(s):  
C. Y. Wang ◽  
E. H. Lim ◽  
H. Liu ◽  
J. L. Sudijono ◽  
T. C. Ang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Threshold Voltage ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Gate Oxide ◽  
Nitride Film ◽  
Device Performance ◽  
Gas Flow Ratio ◽  
The Impact

ABSTRACTIn this paper the impact of the ESL (Etch Stop layer) nitride on the device performance especially the threshold voltage (Vt) has been studied. From SIMS analysis, it is found that different nitride gives different H concentration, [H] in the Gate oxide area, the higher [H] in the nitride film, the higher H in the Gate Oxide area and the lower the threshold voltage. It is also found that using TiSi instead of CoSi can help to stop the H from diffusing into Gate Oxide/channel area, resulting in a smaller threshold voltage drift for the device employed TiSi. Study to control the [H] in the nitride film is also carried out. In this paper, RBS, HFS and FTIR are used to analyze the composition changes of the SiN films prepared using Plasma enhanced Chemical Vapor deposition (PECVD), Rapid Thermal Chemical Vapor Deposition (RTCVD) with different process parameters. Gas flow ratio, RF power and temperature are found to be the key factors that affect the composition and the H concentration in the film. It is found that the nearer the SiN composition to stoichiometric Si3N4, the lower the [H] in SiN film because there is no excess silicon or nitrogen to be bonded with H. However the lowest [H] in the SiN film is limited by temperature. The higher the process temperature the lower the [H] can be obtained in the SiN film and the nearer the composition to stoichiometric Si3N4.

The SiNx films process research by plasma-enhanced chemical vapor deposition in crystalline silicon solar cells

2017 ◽  
Vol 31 (16-19) ◽  
pp. 1744101 ◽  
Author(s):  
Bitao Chen ◽  
Yingke Zhang ◽  
Qiuping Ouyang ◽  
Fei Chen ◽  
Xinghua Zhan ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Solar Cell ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Silicon Solar Cell ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Double Layers ◽  
Crystalline Silicon Solar Cell

SiNx thin film has been widely used in crystalline silicon solar cell production because of the good anti-reflection and passivation effect. We can effectively optimize the cells performance by plasma-enhanced chemical vapor deposition (PECVD) method to change deposition conditions such as temperature, gas flow ratio, etc. In this paper, we deposit a new layer of SiNx thin film on the basis of double-layers process. By changing the process parameters, the compactness of thin films is improved effectively. The NH3passivation technology is augmented in a creative way, which improves the minority carrier lifetime. In sight of this, a significant increase is generated in the photoelectric performance of crystalline silicon solar cell.

Hydrogen Release and Si-N Bond-Healing Infrared Study of Rapid Thermal Annealed Amorphous Silicon Nitride Thin Films

1995 ◽  
Vol 398 ◽  
Author(s):  
P. Santos-Filho ◽  
G. Stevens ◽  
Z. Lu ◽  
K. Koh ◽  
G. Lucovsky
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Gas Flow ◽  
Structural Changes ◽  
Thermal Dissociation ◽  
Chemical Vapor ◽  
Hydrogen Release ◽  
Ex Situ ◽  
Infrared Study ◽  
Amorphous Silicon Nitride

ABSTRACTWe address aspects of hydrogen bonding and its thermal evolution in amorphous Silicon nitride films grown by Remote Plasma Enhanced Chemical Vapor Deposition (RPECVD) from SiH4 and NH3 (or ND3) source gases. Rapid Thermal Annealing (RTA) decreases the Si-H(D) and SiN-H(D) bond populations. The hydrogen bonds break, and H2 (HD, D2) forms and evolves from the film with the heat treatment. This molecular hydrogen release is accompanied by Si- and N- bond healing as detected by a SiN infra red stretch mode signal gain. The ex-situ RTA experiment temperatures ranged from 400 °C to 1200 °C, in 100 °C steps and the film structural changes were monitored by Fourier Transform Infrared spectroscopy (FTIR) after each incremental anneal. Gas flow ratios R=NH3/SiH4 > 2 produced films in which SiN-H(D) bonds dissociated, and a gas desorption rate equation estimated an activation energy barrier of Ea = 0.3 eV. The release of hydrogen from the films in the form of H2 (D2) and ammonia radicals was detected by mass spectrometry and is shown here. The re-bonding of nitrogen to silicon upon thermal dissociation of hydrogen's is consistent with the improvement of the electrical properties of a-SiN:H films following RTA treatment.

Heat Transfer in Chemical Vapor Deposited Optical Fiber Coatings

2001 ◽  
Author(s):  
Patricia O. Iwanik ◽  
Wilson K. S. Chiu
Keyword(s):  
Heat Transfer ◽  
Optical Fiber ◽  
Gas Flow ◽  
Convection Heat Transfer ◽  
Fiber Surface ◽  
Chemical Vapor ◽  
Temperature Changes ◽  
Flow And Heat Transfer ◽  
Chemical Vapor Deposited ◽  
Fiber Coatings

Abstract A fundamental understanding of how reactor parameters influence the fiber surface temperature is essential to manufacturing high quality optical fiber coatings by chemical vapor deposition (CVD). In an attempt to better understand this process, a finite volume model has been developed to study the gas flow and heat transfer of an optical fiber as it travels through a CVD reactor. This study showed that draw speed significantly affects fiber temperature inside the reactor, with temperature changes up to 45% observed under the conditions studied. Multiple heat transfer modes contribute to this phenomena, with convection heat transfer dominating the process.

Effect of Nitrogen Doping on the Structure and Optical Properties of N-Type Hydrogenated Amorphous Silicon Thin Films

2011 ◽  
Vol 383-390 ◽  
pp. 6980-6985
Author(s):  
Mao Yang Wu ◽  
Wei Li ◽  
Jun Wei Fu ◽  
Yi Jiao Qiu ◽  
Ya Dong Jiang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Amorphous Silicon ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Silicon Thin Films ◽  
Frequency Plasma ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon (a-Si:H) thin films doped with both Phosphor and Nitrogen are deposited by ratio frequency plasma enhanced chemical vapor deposition (PECVD). The effect of gas flow rate of ammonia (FrNH3) on the composition, microstructure and optical properties of the films has been investigated by X-ray photoelectron spectroscopy, Raman spectroscopy and ellipsometric spectra, respectively. The results show that with the increase of FrNH3, Si-N bonds appear while the short-range order deteriorate in the films. Besides, the optical properties of N-doped n-type a-Si:H thin films can be easily controlled in a PECVD system.

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