Self-Assembled Monolayer (SAM) is a single layer of ordered molecules absorbed on a
surface by chemical bonding between the molecular head group and the surface. The surface
properties can be controlled by the terminal functional group of the SAM layer. In order to utilize
SAM layers for device applications, SAM layer needs to be patterned as a sub-micron size. Patterning
of SAM layer in sub-micron size has been done by various techniques including direct-writing by
dip-pen nano lithography, selective etching with UV photons, and selective deposition of SAM layer
by &-contact printing. In this study, silane based SAM layer was patterned to the sub-micron size
using zero residual Nano imprint Lithography, which is regarded as next generation lithography
technique due to its simplicity, high throughput and high resolution pattern transferring capability.
Using zero-residual layer imprinting, 300nm~2um sized SAM patterns can successfully fabricated. In
order to check the surface property of patterned SAM layer, a solution containing nano Ag particles
was spin-coated on the SAM patterned substrate and nano Ag particles were selectively deposited on
the substrate.