scholarly journals Photoluminescence Study of Gallium Nitride Thin Films Obtained by Infrared Close Space Vapor Transport

Materials ◽  
2013 ◽  
Vol 6 (3) ◽  
pp. 1050-1060 ◽  
Author(s):  
Guillermo Santana ◽  
Osvaldo de Melo ◽  
Jorge Aguilar-Hernández ◽  
Rogelio Mendoza-Pérez ◽  
B. Monroy ◽  
...  
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Vapor Transport ◽  
Photoluminescence Study

Photoluminescence study of laser ablated gallium nitride thin films

2002 ◽  
Author(s):  
Jerzy M. Wrobel ◽  
Ewa Placzek-Popko ◽  
Jan J. Dubowski ◽  
Haipeng Tang ◽  
James B. Webb
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Photoluminescence Study

Electronic band structure of gallium nitride: a comparative angle-resolved photoemission study of single crystals and thin films

2002 ◽  
Vol 507-510 ◽  
pp. 223-228 ◽  
Author(s):  
L. Plucinski ◽  
T. Strasser ◽  
B.J. Kowalski ◽  
K. Rossnagel ◽  
T. Boetcher ◽  
...  
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Band Structure ◽  
Single Crystals ◽  
Electronic Band Structure ◽  
Electronic Band ◽  
Photoemission Study

scholarly journals C-VCalculations in CdS/CdTe Thin Films Solar Cells with aCdSxTe1-xInterlayer

2013 ◽  
Vol 2013 ◽  
pp. 1-4
Author(s):  
A. Gonzalez-Cisneros ◽  
F. L. Castillo-Alvarado ◽  
J. Ortiz-Lopez ◽  
G. Contreras-Puente
Keyword(s):  
Experimental Data ◽  
Thin Films ◽  
Solar Cells ◽  
Photovoltaic Cells ◽  
Cdte Film ◽  
Vapor Transport ◽  
Cdte Solar Cells ◽  
Cdte Thin Films ◽  
Cds Film ◽  
Theoretical Results

In CdS/CdTe solar cells, chemical interdiffusion at the interface gives rise to the formation of an interlayer of the ternary compoundCdSxCdTe1-x. In this work, we evaluate the effects of this interlayer in CdS/CdTe photovoltaic cells in order to improve theoretical results describing experimentalC-V(capacitance versus voltage) characteristics. We extended our previous theoretical methodology developed on the basis of three cardinal equations (Castillo-Alvarado et al., 2010). The present results provide a better fit to experimental data obtained from CdS/CdTe solar cells grown in our laboratory by the chemical bath deposition (for CdS film) and the close-spaced vapor transport (for CdTe film) techniques.

Space-charge-limited current flow in gallium nitride thin films

1974 ◽  
Vol 10 (2) ◽  
pp. 582-590 ◽  
Author(s):  
J. C. Vesely ◽  
M. Shatzkes ◽  
P. J. Burkhardt
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Space Charge ◽  
Current Flow ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Space Charge Limited

Experimental Study of the Effect of Precursor Composition On the Microstructure of Gallium Nitride Thin Films Grown by the MOCVD Process

2021 ◽  
Author(s):  
Omar D. Jumaah ◽  
Yogesh Jaluria
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Transport Processes ◽  
Carrier Gas ◽  
Precursor Composition

Abstract Chemical vapor deposition (CVD) is a widely used manufacturing process for obtaining thin films of materials like silicon, silicon carbide, graphene and gallium nitride that are employed in the fabrication of electronic and optical devices. Gallium nitride (GaN) thin films are attractive materials for manufacturing optoelectronic device applications due to their wide band gap and superb optoelectronic performance. The reliability and durability of the devices depend on the quality of the thin films. The metal-organic chemical vapor deposition (MOCVD) process is a common technique used to fabricate high-quality GaN thin films. The deposition rate and uniformity of thin films are determined by the thermal transport processes and chemical reactions occurring in the reactor, and are manipulated by controlling the operating conditions and the reactor geometrical configuration. In this study, the epitaxial growth of GaN thin films on sapphire (AL2O3) substrates is carried out in two commercial MOCVD systems. This paper focuses on the composition of the precursor and the carrier gases, since earlier studies have shown the importance of precursor composition. The results show that the flow rate of trimethylgallium (TMG), which is the main ingredient in the process, has a significant effect on the deposition rate and uniformity of the films. Also the carrier gas plays an important role in deposition rate and uniformity. Thus, the use of an appropriate mixture of hydrogen and nitrogen as the carrier gas can improve the deposition rate and quality of GaN thin films.

Piezoelectric Coefficients of Aluminum Nitride and Gallium Nitride

1999 ◽  
Vol 572 ◽  
Author(s):  
C. M. Lueng ◽  
H. L. W. Chan ◽  
W. K. Fong ◽  
C. Surya ◽  
C. L. Choy
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Aluminum Nitride ◽  
Composite Film ◽  
High Frequency ◽  
Molecular Beam ◽  
Silicon Substrates ◽  
Heterodyne Interferometer

ABSTRACTAluminum nitride (AlN) and gallium nitride (GaN) thin films have potential uses in high temperature, high frequency (e.g. microwave) acoustic devices. In this work, the piezoelectric coefficients of wurtzite AlN and GaN/AlN composite film grown on silicon substrates by molecular beam epitaxy were measured by a Mach-Zehnder type heterodyne interferometer. The effects of the substrate on the measured coefficients are discussed.

Growth, structure and optoelectronic characterizations of high quality Cu2ZnSnS4 thin films obtained by close spaced vapor transport

2015 ◽  
Vol 85 ◽  
pp. 918-924 ◽  
Author(s):  
A. Sagna ◽  
K. Djessas ◽  
C. Sene ◽  
M. Belaqziz ◽  
H. Chehouani ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Transport ◽  
High Quality ◽  
Growth Structure

Structural and photoluminescent properties of CuGaxIn1−xSe2 thin films prepared by close-spaced vapor transport technique

2018 ◽  
Vol 88 ◽  
pp. 167-172 ◽  
Author(s):  
Houda Tassoult ◽  
Abdesselam Bouloufa ◽  
Marek Pawlowski ◽  
Malgorzata Igalson
Keyword(s):  
Thin Films ◽  
Vapor Transport ◽  
Transport Technique
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