scholarly journals Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory

Materials ◽  
2010 ◽  
Vol 3 (11) ◽  
pp. 4950-4964 ◽  
Author(s):  
Shigeki Sakai ◽  
Mitsue Takahashi
Keyword(s):  
Flash Memory ◽  
Field Effect ◽  
Recent Progress ◽  
Field Effect Transistors

Recent progress on organic donor–acceptor complexes as active elements in organic field-effect transistors

2018 ◽  
Vol 6 (14) ◽  
pp. 3485-3498 ◽  
Author(s):  
Jing Zhang ◽  
Jianqun Jin ◽  
Haixiao Xu ◽  
Qichun Zhang ◽  
Wei Huang
Keyword(s):  
Field Effect ◽  
Recent Progress ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Active Elements ◽  
Potential Applications ◽  
Donor Acceptor

The recent progress on the methods to prepare donor (D)–acceptor (A) co-crystals and their potential applications in OFETs has been reviewed.

Silicon Carbide Power Field-Effect Transistors

MRS Bulletin ◽  
2005 ◽  
Vol 30 (4) ◽  
pp. 293-298 ◽  
Author(s):  
Jian H. Zhao
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Field Effect ◽  
Recent Progress ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Power Density ◽  
Advantages And Disadvantages ◽  
Power Switches

AbstractSilicon carbide power field-effect transistors, including power vertical-junction FETs (VJFETs) and metal oxide semiconductor FETs (MOSFETs), are unipolar power switches that have been investigated for high-temperature and high-power-density applications. Recent progress and results will be reviewed for different device designs such as normally-OFF and normally-ON VJFETs, double-implanted MOSFETs, and U-shaped-channel MOSFETs. The advantages and disadvantages of SiC VJFETs and MOSFETs will be discussed. Remaining challenges will be identified.

scholarly journals MESFET Electronics: Recent Progress on ZnO-Based Metal-Semiconductor Field-Effect Transistors and Their Application in Transparent Integrated Circuits (Adv. Mater. 47/2010)

2010 ◽  
Vol 22 (47) ◽  
pp. 5323-5323
Author(s):  
Heiko Frenzel ◽  
Alexander Lajn ◽  
Holger von Wenckstern ◽  
Michael Lorenz ◽  
Friedrich Schein ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Field Effect ◽  
Recent Progress ◽  
Field Effect Transistors

scholarly journals The Development of Silicon Nanowire as Sensing Material and Its Applications

2013 ◽  
Vol 2013 ◽  
pp. 1-16 ◽  
Author(s):  
Jahwarhar Izuan Abdul Rashid ◽  
Jaafar Abdullah ◽  
Nor Azah Yusof ◽  
Reza Hajian
Keyword(s):  
Field Effect ◽  
Recent Progress ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Chemical Species ◽  
Short Description ◽  
Sensing Material ◽  
Surface Enhanced ◽  
Surface Enhanced Raman ◽  
Enhanced Raman Scattering

The application of silicon nanowire (SiNW) as a sensing nanomaterial for detection of biological and chemical species has gained attention due to its unique properties. In this review, a short description is also demonstrated on the synthesis techniques of SiNWs and recent progress on sensor development based on electrochemical methods, fluorescence field-effect transistors (FET), and surface-enhanced Raman scattering (SERS) spectroscopy. We also discussed the challenges of SiNW-based sensors in the future.

Recent progress in the development of n-type organic semiconductors for organic field effect transistors

2017 ◽  
Vol 5 (34) ◽  
pp. 8654-8681 ◽  
Author(s):  
Jesse T. E. Quinn ◽  
Jiaxin Zhu ◽  
Xu Li ◽  
Jinliang Wang ◽  
Yuning Li
Keyword(s):  
Electron Transport ◽  
Organic Semiconductors ◽  
Field Effect ◽  
Recent Progress ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Major Progress

This article reviews recent major progress in the development of organic semiconductors as electron transport n-channel materials in organic field effect transistors (OFETs).

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