Damage Related Defect Levels in Oxygen Implanted GaAs and InP

1991 ◽  
Vol 240 ◽  
Author(s):  
L. He ◽  
W. A. Anderson
Keyword(s):  
Deep Level ◽  
High Resistivity ◽  
Oxygen Ion ◽  
Current Voltage ◽  
Surface Disturbance ◽  
Different Temperatures ◽  
Related Defect ◽  
Transient Spectroscopy ◽  
Comparison Of The Results ◽  
Substrate Doping

ABSTRACTOxygen ion-implantation can be used to create high resistivity regions in GaAs and InP. We have studied the low dose oxygen implantation in GaAs and InP by photoreflectance spectroscopy (PR), deep level transient spectroscopy (DLTS) and current-voltage (I-V) characteristics. Rapid thermal annealing (RTA) treatments were carried out at different temperatures after implantation to study the annealing temperature effect. The surface disturbance by implantation was studied by PR. Free carrier compensation was observed in every implanted sample and gave improved I-V properties. By DLTS tests, one electron trap with Ea = Ec-0.15eV and a hole trap with Ea = Ev + 0.76eV in the starting GaAs wafer disappeared after O+ implantation due to carrier compensation. In undoped InP, three new electron traps with Ea = Ec-0.47eV, 0.28eV and O.lleV were created after O+ implantation which are believed to be damage related. The comparison of the results from undoped and n-type doped InP indicated that the carrier compensation effect is substrate doping dependent.

scholarly journals Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions

Materials ◽  
2021 ◽  
Vol 14 (8) ◽  
pp. 1966
Author(s):  
Domenico Pellegrino ◽  
Lucia Calcagno ◽  
Massimo Zimbone ◽  
Salvatore Di Franco ◽  
Antonella Sciuto
Keyword(s):  
Deep Level ◽  
Electrical Characterization ◽  
High Fluence ◽  
Defect States ◽  
Exponential Parameter ◽  
Current Voltage ◽  
Different Temperatures ◽  
In Series ◽  
Transient Spectroscopy ◽  
Fluence Range

In this study, 4H-SiC p–n junctions were irradiated with 700 keV He+ ions in the fluence range 1.0 × 1012 to 1.0 × 1015 ions/cm2. The effects of irradiation were investigated by current–voltage (I–V) and capacitance–voltage (C–V) measurements, while deep-level transient spectroscopy (DLTS) was used to study the traps introduced by irradiation defects. Modifications of the device’s electrical performances were observed after irradiation, and two fluence regimes were identified. In the low fluence range (≤1013 ions/cm2), I–V characteristics evidenced an increase in series resistance, which can be associated with the decrease in the dopant concentration, as also denoted by C–V measurements. In addition, the pre-exponential parameter of junction generation current increased with fluence due to the increase in point defect concentration. The main produced defect states were the Z1/2, RD1/2, and EH6/7 centers, whose concentrations increased with fluence. At high fluence (>1013 ions/cm2), I–V curves showed a strong decrease in the generation current, while DLTS evidenced a rearrangement of defects. The detailed electrical characterization of the p–n junction performed at different temperatures highlights the existence of conduction paths with peculiar electrical properties introduced by high fluence irradiation. The results suggest the formation of localized highly resistive regions (realized by agglomeration of point defects) in parallel with the main junction.

Contact-Related Deep States in AI-GaInP/GaAs Interface

1993 ◽  
Vol 325 ◽  
Author(s):  
Z.C. Huang ◽  
C.R. Wie
Keyword(s):  
Deep Level ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Oxygen Contamination ◽  
Related Defect ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy ◽  
Recombination Current

AbstractDeep levels have been measured in molecular beam epitaxy grown Ga0.51In0.49P/GaAs heterostructure by double correlation deep level transient spectroscopy. Gold(Au) and Aluminum (Al) metals were used for Schottky contact. A contact-related hole trap with an activation energy of 0.50-0.75eV was observed at the A1/GaInP interface, but not at the Au/GaInP interface. To our knowledge, this contact-related trap has not been reported before. We attribute this trap to the oxygen contamination, or a vacancy-related defect, VIn or VGa. A new electron trap at 0.28eV was also observed in both Au- and Al-Schottky diodes. Its depth profile showed that it is a bulk trap in GaInP epilayer. The temperature dependent current-voltage characteristics (I-V-T) show a large interface recombination current at the GaInP surface due to the Al-contact. Concentration of the interface trap and the magnitude of recombination current are both reduced by a rapid thermal annealing at/or above 450°C after the aluminum deposition.

Study of Substrate Induced Deep Level Defects in Bulk GaN Layers Grown by Molecular Beam Epitaxy Using Deep Level Transient Spectroscopy

2011 ◽  
Vol 295-297 ◽  
pp. 777-780 ◽  
Author(s):  
M. Ajaz Un Nabi ◽  
M. Imran Arshad ◽  
Adnan Ali ◽  
M. Asghar ◽  
M. A Hasan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Beam ◽  
Deep Level ◽  
Diffusion Mechanism ◽  
Electron Trap ◽  
Si Substrate ◽  
Bulk Gan ◽  
Related Defect ◽  
Transient Spectroscopy

In this paper we have investigated the substrate-induced deep level defects in bulk GaN layers grown onp-silicon by molecular beam epitaxy. Representative deep level transient spectroscopy (DLTS) performed on Au-GaN/Si/Al devices displayed only one electron trap E1at 0.23 eV below the conduction band. Owing to out-diffusion mechanism; silicon diffuses into GaN layer from Si substrate maintained at 1050°C, E1level is therefore, attributed to the silicon-related defect. This argument is supported by growth of SiC on Si substrate maintained at 1050°C in MBE chamber using fullerene as a single evaporation source.

EL2 and gallium antisite defects in GaAs: Si

1989 ◽  
Vol 67 (4) ◽  
pp. 375-378 ◽  
Author(s):  
C. K. Teh ◽  
F. L. Weichman ◽  
C. C. Tin ◽  
P. A. Barnes
Keyword(s):  
Fourier Transform ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Fourier Transform Infrared ◽  
Antisite Defect ◽  
Longitudinal Optic ◽  
Related Defect ◽  
Antisite Defects ◽  
Transient Spectroscopy ◽  
Silicon Doped

Photoluminescence (PL), Fourier-transform infrared (FTIR), and deep-level transient spectroscopy (DLTS) measurements have been made on various samples of silicon-doped liquid-encapsulated Czochralski-grown GaAs. All the samples show prominent PL peaks at 1.443 and 1.325 eV together with their longitudinal optic (LO) phonon peaks. The PL peak at 1.443 eV has been reported in the literature as being due to either GaAs or a boron-related defect. The FTIR results show the presence of BGa at 540.3 and 517.0 cm−1 and SiGa at 383.6 cm−1. We have observed that there is no correlation between the PL peak at 1.443 eV and BGa. Thus, we believe that this PL peak is related to the GaAs antisite defect. The presence of EL2 in the samples has been measured using DLTS. We have found that the intensity of the PL peak at 1.443 eV varies inversely with that of the EL2 peak. This relationship indirectly confirms that the 1.443 eV peak is due to the gallium antisite defect. The PL peak at 1.325 eV is significantly different from those reported in the literature for GaAs:Si. Measurements have also been made on samples of GaAs:Si annealed under different arsenic overpressures.

Transport Properties and Conduction Band Offset of n-ZnO/n-6H-SiC Heterostructures

2006 ◽  
Vol 957 ◽  
Author(s):  
Yahya Alivov ◽  
Xiao Bo ◽  
Fan Qian ◽  
Daniel Johnstone ◽  
Cole Litton ◽  
...  
Keyword(s):  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Band Offset ◽  
Measured Temperature ◽  
Temperature Dependent ◽  
Conduction Band Offset ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy

ABSTRACTThe conduction band offset of n-ZnO/n-6H-SiC heterostructures fabricated by rf-sputtered ZnO on commercial n-type 6H-SiC substrates has been measured. Temperature dependent current-voltage characteristics, photocapacitance, and deep level transient spectroscopy measurements showed the conduction band offsets to be 1.25 eV, 1.1 eV, and 1.22 eV, respectively.

Investigation of Deep Levels In X-Ray Detector Material With Photo Induced Current Transient Spectroscopy (Picts)

1993 ◽  
Vol 302 ◽  
Author(s):  
C Eiche ◽  
M Fiederle ◽  
J Weese ◽  
D Maier ◽  
D Ebling ◽  
...  
Keyword(s):  
Tikhonov Regularization ◽  
Deep Level ◽  
Great Influence ◽  
Simulated Data ◽  
Radiation Detectors ◽  
Deep Levels ◽  
High Resistivity ◽  
Pulse Excitation ◽  
Detector Performance ◽  
Transient Spectroscopy

ABSTRACTDeep levels have a great influence on the recombination behavior of the free carriers in semiconductors. For several years PICTS has been used to investigate the deep levels in high resistivity material such as GaAs or CdTe used in detector applications. An important feature of the PICTS measurements is the analysis of the current transients after pulse excitation. We propose using a new method based on Tikhonov regularization. This method was implemented in the program FTIKREG (Fast Tikhonov Regularization) by one of the authors. The superior resolution of the regularization method in comparison to conventional techniques is shown using simulated data. Moreover, the method is applied to investigate deep levels in CdTe:Cl, SI-GaAs and GaAs:Cr samples used for room temperature radiation detectors. A relation between deep level properties and detector performance is proposed.

Electronic Properties of ZnO/Si Heterojunction Prepared by ALD.

2011 ◽  
Vol 178-179 ◽  
pp. 130-135 ◽  
Author(s):  
Vincent Quemener ◽  
Mari Alnes ◽  
Lasse Vines ◽  
Ola Nilsen ◽  
Helmer Fjellvåg ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Deep Level ◽  
Atomic Layer ◽  
Substantial Improvement ◽  
Conduction Band Edge ◽  
Energy Position ◽  
Layer Deposition ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Transient Spectroscopy

ZnO/n-Si and ZnO/p-Si heterostructures were prepared by Atomic layer deposition (ALD) and the electronic properties have been investigated by Current-Voltage (I-V), Capacitance-Voltage (C-V) and Deep level transient spectroscopy (DLTS) measurements. DLTS measurements show two dominants electron traps at the interface of the ZnO/n-Si junction with energy position at 0.07 eV and 0.15 eV below the conduction band edge, labelled E(0.07) and E(0.15), respectively, and no electrically active defects at the interface of the ZnO/p-Si junction. E(0.07) is reduced by annealing up to 400°C while E(0.15) is created at 500°C. The best heterostructure is found after heat treatment at 400°C with a substantial improvement of the current rectification for ZnO/n-Si and the formation of Ohmic contact on ZnO/p-Si. A reduction of the interface defects correlates with an improvement of the crystal structure of the ZnO film with a preferred orientation along the c-axis.

Electrical Characterization of N+-implanted n-type ZnO Single Crystals: p-n Homojunction and Deep Level Defects

2007 ◽  
Vol 1035 ◽  
Author(s):  
Qilin Gu ◽  
Xuemin Dai ◽  
Chi-Chung Ling ◽  
Shijie Xu ◽  
Liwu Lu ◽  
...  
Keyword(s):  
Single Crystals ◽  
Thermal Evolution ◽  
Deep Level ◽  
Schottky Diodes ◽  
Control Sample ◽  
Electrical Characterization ◽  
Type Layer ◽  
Current Voltage ◽  
Transient Spectroscopy ◽  
Induced Defects

AbstractUnintentionally doped n-type ZnO single crystals were implanted by nitrogen ions with different fluences of 1013, 1014 and 1015 cm−2 respectively. ZnO p-n homojunction was successfully fabricated due to the formation of p-type layer after 650°C post-implantation annealing in air for 30 minutes. Further thermal evolution of deep level defects was studied through thermal annealing up to 1200°C. Electrical characterization techniques including current-voltage (I-V), capacitance-voltage (C-V), Deep Level Transient Spectroscopy (DLTS) and double-correlation DLTS (DDLTS) were used for investigating the control sample, all the as-implanted and annealed samples through Au/n-ZnO Schottky diodes as well as ZnO p-n junctions. Detailed electrical properties of fabricated devices and characteristics of implantation induced defects were analyzed based on plentiful DLTS spectra. Moreover, low-temperature photoluminescence experiments of all the as-implanted and annealed samples were performed and the correlation between results from electrical and optical characterizations was discussed.

scholarly journals Electronic Properties and Density of States of Self-Assembled GaSb/GaAs Quantum Dots

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
T. Nowozin ◽  
A. Wiengarten ◽  
L. Bonato ◽  
D. Bimberg ◽  
Wei-Hsun Lin ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Density Of States ◽  
Deep Level ◽  
Material System ◽  
A Value ◽  
Capacitance Voltage ◽  
Different Temperatures ◽  
Self Assembled ◽  
Transient Spectroscopy ◽  
The Individual

The electronic properties of a self-assembled GaSb/GaAs QD ensemble are determined by capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS). The charging and discharging bias regions of the QDs are determined for different temperatures. With a value of 335 (±15) meV the localization energy is rather small compared to values previously determined for the same material system. Similarly, a very small apparent capture cross section is measured (1·10−16 cm2). DLTS signal analysis yields an equivalent to the ensemble density of states for the individual energies as well as the density function of the confinement energies of the QDs in the ensemble.

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