scholarly journals Surface Analysis of TMCTS-Based SiOC(H) Low-k Dielectrics in Post-Etch Strip of ACL Hardmask

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1144
Author(s):  
Min Kyu Park ◽  
Wan Soo Song ◽  
Min Ho Kim ◽  
Sang Jeen Hong
Keyword(s):  
Thin Film ◽  
Aspect Ratio ◽  
Amorphous Carbon ◽  
High Aspect Ratio ◽  
Photoelectron Spectroscopy ◽  
Carbon Layer ◽  
Film Structure ◽  
Plasma Exposure ◽  
Cage Structure ◽  
Low K

The miniaturization of devices requires the introduction of a high aspect ratio through patterning in the Damascene copper interconnect process. The high aspect ratio etch process employs hardmasks, such as amorphous carbon, that can withstand high-powered plasma exposure. When an etch hardmask is removed after patterning, the properties of the underlying film can be altered by the effect of plasma exposure during the strip process. In this study, surface properties of SiOC(H) are investigated after an amorphous carbon strip with O2/Ar plasma. Since the low-k film of SiOC(H) structure shows characteristics according to the Si-O internal bonding structure, the Si-O bonding ratio of the ring, network and cage structure was analyzed through Fourier-transform infrared (FT-IR) analysis to measure changes in thin film properties. X-ray photoelectron spectroscopy (XPS) was also used to add reliability to the SiOC(H) film structure. In addition, the end point of the strip process was obtained using an optical emission spectroscopy sensor and variations in thin film characteristics over the plasma exposure time were analyzed. These results revealed the structural modification of the SiCO(H) thin film in the post-etch strip of the amorphous carbon layer (ACL) hardmask.

Formation of GaN Self-Organized Nanotips by Nanomasking Effect

2001 ◽  
Vol 707 ◽  
Author(s):  
Harumasa Yoshida ◽  
Tatsuhiro Urushido ◽  
Hideto Miyake ◽  
Kazumasa Hiramtsu
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Aspect Ratio ◽  
Formation Mechanism ◽  
High Aspect Ratio ◽  
Photoelectron Spectroscopy ◽  
Nanometer Scale ◽  
Xps Analysis ◽  
X Ray ◽  
Self Organized

ABSTRACTWe have successfully fabricated self-organized GaN nanotips by reactive ion etching using chlorine plasma, and have revealed the formation mechanism. Nanotips with a high density and a high aspect ratio have been formed after the etching. We deduce from X-ray photoelectron spectroscopy (XPS) analysis that the nanotip formation is attributed to nanometer-scale masks of SiO2 on GaN. The structures calculated by Monte Carlo simulation of our formation mechanism are very similar to the experimental nanotip structures.

Role of high aspect-ratio thin-film metal deposition in Cu back-end-of-line technology

2020 ◽  
Vol 38 (5) ◽  
pp. 053402
Author(s):  
Andrew Simon ◽  
Oscar van der Straten ◽  
Nicholas A. Lanzillo ◽  
Chih-Chao Yang ◽  
Takeshi Nogami ◽  
...  
Keyword(s):  
Thin Film ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Metal Deposition ◽  
Line Technology

High aspect ratio contact hole etching using relatively transparent amorphous carbon hard mask deposited from propylene

2010 ◽  
Vol 518 (21) ◽  
pp. 6076-6079 ◽  
Author(s):  
Ching-Yuan Ho ◽  
X.J. Lin ◽  
H.R. Chien ◽  
Chenhsin Lien
Keyword(s):  
Aspect Ratio ◽  
Amorphous Carbon ◽  
High Aspect Ratio ◽  
Hard Mask

Large-scale synthesis of AgNWs with ultra-high aspect ratio above 4000 and their application in conductive thin film

2016 ◽  
Vol 28 (7) ◽  
pp. 5308-5314 ◽  
Author(s):  
Yongyun Mao ◽  
Hongwei Yang ◽  
Changyi Hu ◽  
Junmei Guo ◽  
Xianwei Meng ◽  
...  
Keyword(s):  
Thin Film ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Large Scale ◽  
Large Scale Synthesis

Formation of GaN Self-Organized Nanotips by Nanomasking Effect

2001 ◽  
Vol 693 ◽  
Author(s):  
Harumasa Yoshida ◽  
Tatsuhiro Urushido ◽  
Hideto Miyake ◽  
Kazumasa Hiramtsu
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Aspect Ratio ◽  
Formation Mechanism ◽  
High Aspect Ratio ◽  
Photoelectron Spectroscopy ◽  
Nanometer Scale ◽  
Xps Analysis ◽  
X Ray ◽  
Self Organized

AbstractWe have successfully fabricated self-organized GaN nanotips by reactive ion etching using chlorine plasma, and have revealed the formation mechanism. Nanotips with a high density and a high aspect ratio have been formed after the etching. We deduce from X-ray photoelectron spectroscopy (XPS) analysis that the nanotip formation is attributed to nanometer-scale masks of SiO2 on GaN. The structures calculated by Monte Carlo simulation of our formation mechanism are very similar to the experimental nanotip structures.

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