scholarly journals 4H-SiC Drift Step Recovery Diode with Super Junction for Hard Recovery

Materials ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 684 ◽  
Author(s):  
Xiaoxue Yan ◽  
Lin Liang ◽  
Xinyuan Huang ◽  
Heqing Zhong ◽  
Zewei Yang
Keyword(s):  
Silicon Carbide ◽  
Recovery Process ◽  
Wide Bandgap ◽  
Pulsed Power ◽  
Power Device ◽  
Structure Parameters ◽  
Electrical Characteristics ◽  
Device Model ◽  
Wide Bandgap Material ◽  
First Time

Silicon carbide (SiC) drift step recovery diode (DSRD) is a kind of opening-type pulsed power device with wide bandgap material. The super junction (SJ) structure is introduced in the SiC DSRD for the first time in this paper, in order to increase the hardness of the recovery process, and improve the blocking capability at the same time. The device model of the SJ SiC DSRD is established and its breakdown principle is verified. The effects of various structure parameters including the concentration, the thickness, and the width of the SJ layer on the electrical characteristics of the SJ SiC DSRD are discussed. The characteristics of the SJ SiC DSRD and the conventional SiC DSRD are compared. The results show that the breakdown voltage of the SJ SiC DSRD is 28% higher than that of the conventional SiC DSRD, and the dv/dt output by the circuit based on SJ SiC DSRD is 31% higher than that of conventional SiC DSRD. It is verified that the SJ SiC DSRD can achieve higher voltage, higher cut-off current and harder recovery characteristics than the conventional SiC DSRD, so as to output a higher dv/dt voltage on the load.

scholarly journals Analytical formulas and measurement technique for the built-in potential of practical semiconductor junctions

2019 ◽  
Vol 12 (2) ◽  
pp. 11-14
Author(s):  
Miron Cristea
Keyword(s):  
Silicon Carbide ◽  
Electric Field ◽  
Measurement Technique ◽  
Analytical Formula ◽  
Wide Bandgap ◽  
Semiconductor Materials ◽  
Computer Assisted ◽  
Computer Assisted Design ◽  
Analytical Formulas ◽  
First Time

Abstract Based on Gauss’ law for the electric field, new formulas were deduced, that enable for the first time the writing of an analytical formula of the built-in potential of implanted and diffused semiconductor junctions. Consequently, in this work is devised a measurement technique for the built-in potential of such junctions. Such measurement is useful because new semiconductor materials besides silicon are more and more used today, like silicon-carbide (SiC) and gallium-nitride (GaN), which have larger bandgap and junction built-in potential. Finding the built-in potential helps adjusting the computer assisted design (CAD) tools and validates the simulation of such wide-bandgap devices.

Effect of a pulsed power supply on the spectral and electrical characteristics of HID lamps

2005 ◽  
Vol 38 (8) ◽  
pp. 1170-1177 ◽  
Author(s):  
Abdeljelil Chammam ◽  
Hatem Elloumi ◽  
Brahim Mrabet ◽  
Kamel Charrada ◽  
Mongi Stambouli ◽  
...  
Keyword(s):  
Power Supply ◽  
Pulsed Power ◽  
Electrical Characteristics ◽  
Pulsed Power Supply ◽  
Hid Lamps

The electrical characteristics of silicon carbide alloyed with germanium

2001 ◽  
Vol 175-176 ◽  
pp. 505-511 ◽  
Author(s):  
G Katulka ◽  
K Roe ◽  
J Kolodzey ◽  
G Eldridge ◽  
R.C Clarke ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Electrical Characteristics

Surface Characterization of Silicon Carbide Following Shallow Implantation of Palladium Ions

2005 ◽  
Vol 900 ◽  
Author(s):  
Claudiu I. Muntele ◽  
Sergey Sarkisov ◽  
Iulia Muntele ◽  
Daryush Ila
Keyword(s):  
Silicon Carbide ◽  
Surface Characterization ◽  
Wide Bandgap ◽  
Electrical Contacts ◽  
Temperature Dependent ◽  
Wide Bandgap Semiconductor ◽  
Hydrogen Sensing ◽  
Fast Switching ◽  
Sensing Applications

ABSTRACTSilicon carbide is a promising wide-bandgap semiconductor intended for use in fabrication of high temperature, high power, and fast switching microelectronics components running without cooling. For hydrogen sensing applications, silicon carbide is generally used in conjunction with either palladium or platinum, both of them being good catalysts for hydrogen. Here we are reporting on the temperature-dependent surface morphology and depth profile modifications of Au, Ti, and W electrical contacts deposited on silicon carbide substrates implanted with 20 keV Pd ions.

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