scholarly journals Structural Dependent Eu3+ Luminescence, Photoelectric and Hysteresis Effects in Porous Strontium Titanate

Materials ◽  
2020 ◽  
Vol 13 (24) ◽  
pp. 5767
Author(s):  
Maryia Rudenko ◽  
Nikolai Gaponenko ◽  
Vladimir Litvinov ◽  
Alexander Ermachikhin ◽  
Eugene Chubenko ◽  
...  
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Xrd Analysis ◽  
Frequency Range ◽  
X Ray Diffraction ◽  
X Ray ◽  
Capacitance Voltage ◽  
Voltage Hysteresis ◽  
Secondary Ion

Eu3+ doped porous nanostructured SrTiO3 films and powder fabricated by sol-gel route without using any precursor template are characterized by different morphology and phase composition. The films and the power show red and yellow luminescence with the most intensive photoluminescence (PL) bands at 612 nm and 588 nm, respectively. Raman, secondary ion mass spectrometry (SIMS), and X-ray diffraction (XRD) analysis of undoped nanostructured porous SrTiO3 films showed the presence of TiO2, SrO, and SrTiO3 phases and their components. The undoped porous SrTiO3 films are photosensitive and demonstrate resistive switching. The capacitance-voltage hysteresis loops with the width of about 6 V in the frequency range of 2 kHz—2 MHz were observed.

scholarly journals Effect of Re and Tm-site on morphology structure and optical band gap of ReTmO3 (Re: La, Ce, Nd, Gd, Dy, Y and Tm: Fe, Cr) prepared by sol-gel method

2018 ◽  
Vol 64 (4) ◽  
pp. 381
Author(s):  
Muhammad Tufiq Jamil ◽  
Javed Ahmad ◽  
Syed Hamad Bukhari ◽  
Murtaza Saleem
Keyword(s):  
Band Gap ◽  
Sol Gel ◽  
Xrd Analysis ◽  
Sem Analysis ◽  
X Ray Diffraction ◽  
Orthorhombic Crystal ◽  
X Ray ◽  
Average Grain Size ◽  
Auto Combustion ◽  
Uv Visible

Rare earth nano sized pollycrystalline orthoferrites and orthocromites ReT mO3 (Re = La, Nd, Gd, Dy, Y and T m = Fe, Cr) have been synthesized by sol-gel auto combustion citrate method. The samples have been characterized by means of X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDX), and UV-visible spectroscopy. The samples are single phase as confirmed by XRD analysis and correspond to the orthorhombic crystal symmetry with space group pbnm. Debye Scherer formula and Williamson Hall analysis have been used to calculate the average grain size which is consistent with that of determined from SEM analysis and varied between 25-75 nm. The elemental compositions of all samples have been checked by EDX analysis. Different crystallographic parameters are calculated with strong structural correlation among Re and Tm sites. The optical energy band gap has been calculated by using Tauc relation estimated to be in the range of 1.77 - 1.87 eV and 2.77 - 3.14 eV, for ReFeO3 and ReCrO3, respectively.

The Oxide Scale Growth Mechanism on Fe20Cr5Al+RE Alloy in SO2+O2

2009 ◽  
Vol 289-292 ◽  
pp. 541-550 ◽  
Author(s):  
Jerzy Jedlinski ◽  
Zbigniew Żurek ◽  
Martah Homa ◽  
G. Smoła ◽  
J. Camra
Keyword(s):  
Phase Composition ◽  
Secondary Ion Mass Spectrometry ◽  
Grazing Angle ◽  
Oxidation Mechanism ◽  
Complex Oxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Thin Foils ◽  
Manufacturing Procedure ◽  
Secondary Ion

The oxidation mechanism of FeCrAl (+RE), RE: reactive elements: Y and Hf) thin foils was studied at temperatures ranging from 1093 K to 1173 K in SO2+1%O2 atmosphere. Materials were subjected to isothermal and thermal cycling exposures as well as to the so-called two-stage-oxidation. In the latter, an oxygen isotope 18O2 was used as a tracer. Starting materials and scales were characterized using Grazing Angle X-Ray Diffraction (GA-XRD), EDX, SEM, XPS and High Spatial Resolution Secondary Ion Mass Spectrometry (HSR-SIMS). The obtained results showed within the studied range of exposure conditions the scales on all the studied alloys grow via outward mechanism typical for transient oxides and not for the -Al2O3 which is consistent with phase composition results and scale morphology and/or microstructure. It was also found that ‘as received’ foils are not bare metals but complex oxide-on-metal systems resulting from their manufacturing procedure. The obtained results are discussed in terms of the diffusion-related transport properties of the scale and of the scale phase composition.

scholarly journals Disordering of InGaN/GaN Superlattices After High-Pressure Annealing

1998 ◽  
Vol 537 ◽  
Author(s):  
M.D. McCluskey ◽  
L.T. Romano ◽  
B.S. Krusor ◽  
D. Hofstetter ◽  
D.P. Bour ◽  
...  
Keyword(s):  
Quantum Well ◽  
Secondary Ion Mass Spectrometry ◽  
Multiple Quantum Well ◽  
Blue Shift ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Annealing Temperatures ◽  
Composition Profiles ◽  
Secondary Ion

AbstractInterdiffusion of In and Ga is observed in InGaN multiple-quantum-well superlattices for annealing temperatures of 1250 to 1400°C. Hydrostatic pressures of up to 15 kbar were applied during the annealing treatments to prevent decomposition of the InGaN and GaN. In as-grown material, x-ray diffraction spectra show InGaN superlattice peaks up to the fourth order. After annealing at 1400°C for 15 min, only the zero-order InGaN peak is observed, a result of compositional disordering of the superlattice. Composition profiles from secondary ion mass spectrometry indicate significant diffusion of Mg from the p-type GaN layer into the quantum well region. This Mg diffusion may lead to an enhancement of superlattice disordering. For annealing temperatures between 1250 and 1300°C, a blue shift of the InGaN spontaneous emission peak is observed, consistent with interdiffusion of In and Ga in the quantum-well region.

Strain-Induced Diffusion in Heteroepitaxially Grown CuInSe2 on GaAs Substrates

1995 ◽  
Vol 399 ◽  
Author(s):  
P. Fons ◽  
S. Niki ◽  
A. Yamada ◽  
A. Okada ◽  
D.J. Tweet
Keyword(s):  
Thin Film ◽  
Secondary Ion Mass Spectrometry ◽  
Second Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
State Of Stress ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Secondary Ion ◽  
Lattice Matched

ABSTRACTA series of CuInSe2 thin films of varying thicknesses were grown on both GaAs(001) substrates and nominally lattice-matched In0.29Ga0.71As (001) linearly graded buffers by MBE at 450°C. Transmission electron microscopy and high resolution x-ray diffraction measurements revealed the presence of a second phase with chalcopyrite symmetry strained to the CuInSe2 thin film in-plane lattice constant for CuInSe2 films grown on GaAs substrates. Further examination confirmed that the second phase possessed chalcopyrite symmetry. No second phase was observed in films grown on nearly lattice-matched In0.29Ga0.71As (001) linearly graded buffers. Secondary ion mass spectrometry confirmed the presence of interdiffusion from of Ga from the substrate into the CuInSe2layer. It is speculated that this diffusion is related to the state of stress due to heteroepitaxial misfit.

CdTe Films Grown on InSb Substrates by Organometallic Epitaxy

1986 ◽  
Vol 90 ◽  
Author(s):  
I. B. Bhat ◽  
N. R. Taskar ◽  
J. Ayers ◽  
K. Patel ◽  
S. K. Ghandhi
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Organometallic Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Cdte Films ◽  
Secondary Ion ◽  
Cdte Growth

ABSTRACTCadmium telluride layers were grown on InSb substrates by organometallic vapor phase epitaxy and examined using secondary ion mass spectrometry (SIMS), photoluminescence (Pb) and double crystal x-ray diffraction (DCD). The substrate temperature and the nature of the surface prior to growth are shown to be the most important parameters which influence the quality of CdTe layers. Growth on diethyltelluride (DETe) stabilized InSb substrates resulted in CdTe growth with a misorientation of about 4 minutes of arc with respect to the substrates. On the other hand, the grown layers followed the orientation of the substrates when a dimethylcadmium (DMCd) stabilized InSb was used. Growth at 350°C resulted in the smallest x-ray rocking curve (DCRC) full width at half maximum (FWHM) of about 20 arc seconds.

scholarly journals Synthesis and Characterization of Ni2+-doped SnO2 Powders

2019 ◽  
Vol 35 (4) ◽  
Author(s):  
Trinh Thi Loan ◽  
Nguyen Ngoc Long
Keyword(s):  
Oxygen Vacancies ◽  
Sol Gel ◽  
Xrd Analysis ◽  
Near Band Edge ◽  
X Ray Diffraction ◽  
Violet Emission ◽  
Dopant Content ◽  
X Ray ◽  
Undoped Sno2

The SnO2:Ni2+ powders with dopant contents ranging from 0.0 to 12 mol% have been synthesized by sol-gel method. The samples were characterized by X-ray diffraction (XRD) Raman spectroscopy, energy-dispersive X-ray spectrometer (EDS) and photoluminescense (PL) spectra. XRD analysis showed that samples doped with low Ni- concentrations exhibited single SnO2 crystalline phase, whereas the samples with high Ni- concentrations exhibited a mixture of SnO2 and NiO phases. The lattice parameters of the SnO2 host were independent on Ni2+ dopant content, while Raman mode positions were dependenton Ni2+ dopant content. The PL spectrum of the undoped SnO2 was characterized by the emission peaks due to near band edge (NBE) emission and the violet emission peaks associated with surface dangling bonds or oxygen vacancies and Sn interstitials.

Low thermal budget epitaxial lift off (ELO) for Ge (111)-on-insulator structure

2021 ◽  
Author(s):  
Wen-Hsin Chang ◽  
Hsien-Wen Wan ◽  
Yi-Ting Cheng ◽  
Yen-Hsun Glen Lin ◽  
Toshifumi IRISAWA ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
X Ray Diffraction ◽  
Thermal Budget ◽  
X Ray ◽  
Transmission Electron ◽  
Lift Off ◽  
Low Thermal Budget ◽  
3D Applications ◽  
Secondary Ion

Abstract Germanium-on-Insulator (GeOI) structures with the surface orientation of (111) have been successfully fabricated by using low thermal budget epitaxial-lift-off (ELO) technology via direct bonding and selective etching. The material characteristics and transport properties of the Ge(111)OI structure have been systematically investigated through secondary-ion mass spectrometry, Raman spectroscopy, X-ray diffraction, high-resolution transmission electron microscope, and Hall measurement. The transferred Ge (111) layer remained almost intact from the as-grown epitaxial layers, indicating the benefits of ELO technology. The low thermal budget ELO technology demonstrated in this work is promising to integrate Ge channels with different surface orientations on Si (100) substrates for future monolithic 3D applications.

Implantation and Activation of High Concentrations of Boron and Phosphorus in Germanium

2005 ◽  
Vol 891 ◽  
Author(s):  
Yong Seok Suh ◽  
Malcolm S. Carroll ◽  
Roland A. Levy ◽  
Gabriele Bisognin ◽  
Davide De Salvador ◽  
...  
Keyword(s):  
Peak Concentration ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
Nuclear Reaction Analysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
High Concentrations ◽  
X Ray Absorption ◽  
Secondary Ion ◽  
Activation Behavior

ABSTRACTThe effect of increasing boron or phosphorus implant dose (i.e., 5×1013-5×1016 cm−2) and subsequent annealing (400-600°C for 3 hrs in N2) on the activation, diffusion and structure of germanium is studied in this work. The peak concentration of implant dose is ∼ 2×1021 cm−3. Secondary ion mass spectrometry (SIMS), spreading resistance profiling (SRP), high resolution X-ray diffraction (HRXRD), X-ray absorption fine structure (XAFS), Rutherford backscattering spectrometry (RBS), and nuclear reaction analysis (NRA) were used to characterize the implant and activation behavior. Boron is found to have a high solid solubility (i.e., > 2×1020 cm−3), even immediately after implant; while in contrast, phosphorus is limited to ∼ 1–2×1019 cm−3. Diffusion of phosphorus is also extremely extrinsic, while boron is practically immobile.

Bioglasses in the SiO2-CaO-P2O5 System

2008 ◽  
Vol 47-50 ◽  
pp. 1063-1066 ◽  
Author(s):  
Costel Birsan ◽  
Cristina Ghitulica ◽  
Ecaterina Andronescu ◽  
Cristina Ionita ◽  
Mihaela Birsan
Keyword(s):  
Body Fluid ◽  
Sol Gel ◽  
Xrd Analysis ◽  
Silica Content ◽  
Synthesis And Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Physiological Serum ◽  
P2o5 System

The aim of the study was the synthesis and characterization of bioactive osteoinductive glasses, in the SiO2 – CaO – P2O5 system. In order to maintain the bioactive character of bioglasses, for SiO2 contents higher than 60%, the sol – gel method was used for preparation. On the obtained powders, thermal, grain size and X - ray diffraction analysis were performed. The X - ray diffraction emphasized the formation of phosphate phases, whose proportion decreases as the silica content is increased. Later, the powders were thermally treated at temperatures between 1000 and 14000C, the phase composition evolution being monitored through XRD analysis. On the powder suspensions in physiological serum, the evolution of pH was investigated, in order to establish the chemical stability. The behavior of the obtained powders in physiological medium was studied, by immersing samples in simulated body fluid and excerpted after different periods of time.

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