scholarly journals Fabrication of a Flexible Photodetector Based on a Liquid Eutectic Gallium Indium

Materials ◽  
2020 ◽  
Vol 13 (22) ◽  
pp. 5210
Author(s):  
Peng Xiao ◽  
Hyun-Jong Gwak ◽  
Soonmin Seo
Keyword(s):  
Thin Film ◽  
Electrical Conductivity ◽  
Reliable Method ◽  
Stretchable Electronics ◽  
Pdms Substrate ◽  
Pdms Film ◽  
Photo Response ◽  
Flexible Photodetector ◽  
Response Current ◽  
Laser Marker

A fluidic gallium-based liquid metal (LM) is an interesting material for producing flexible and stretchable electronics. A simple and reliable method developed to facilitate the fabrication of a photodetector based on an LM is presented. A large and thin conductive eutectic gallium indium (EGaIn) film can be fabricated with compressed EGaIn microdroplets. A solution of LM microdroplets can be synthesized by ultrasonication after mixing with EGaIn and ethanol and then dried on a PDMS substrate. In this study, a conductive LM film was obtained after pressing with another substrate. The film was sufficiently conductive and stretchable, and its electrical conductivity was 2.2 × 106 S/m. The thin film was patterned by a fiber laser marker, and the minimum line width of the pattern was approximately 20 μm. Using a sticky PDMS film, a Ga2O3 photo-responsive layer was exfoliated from the fabricated LM film. With the patterned LM electrode and the transparent photo-responsive film, a flexible photodetector was fabricated, which yielded photo-response-current ratios of 30.3%, 14.7%, and 16.1% under 254 nm ultraviolet, 365 nm ultraviolet, and visible light, respectively.

Electrical Conductivity Manipulation and Switching Phenomena of Poly(p-Phenylenebenzobisthiazole) Thin Film by Doping Process

2010 ◽  
Author(s):  
Jiahua Zhu ◽  
Thomas C. Ho ◽  
Zhanhu Guo ◽  
Suying Wei ◽  
Sung Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Conductivity

scholarly journals Tunable Perfect THz Absorber Based on a Stretchable Ultrathin Carbon-Polymer Bilayer

Materials ◽  
2019 ◽  
Vol 12 (1) ◽  
pp. 143 ◽  
Author(s):  
Alesia Paddubskaya ◽  
Marina Demidenko ◽  
Konstantin Batrakov ◽  
Gintaras Valušis ◽  
Tommi Kaplas ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Film ◽  
Sandwich Structure ◽  
Thick Layer ◽  
Pyrolytic Carbon ◽  
Thz Radiation ◽  
Pdms Film ◽  
Absorption Resonance ◽  
Screen Approach ◽  
Polymer Thickness

By exploring the Salisbury screen approach, we propose and demonstrate a thin film absorber of terahertz (THz) radiation. The absorber is comprised of a less than 100 nm thick layer of pyrolytic carbon deposited on a stretchable polydimethylsiloxane (PDMS) film followed by the metal film. We demonstrate that being overall less than 200 microns thick, such a sandwich structure absorbs resonantly up to 99.9%of the incident THz radiation, and that the absorption resonance is determined by the polymer thickness, which can be adjusted by stretching.

Molecularly Mediated Thin Film Assembly of Nanoparticles on Flexible Devices: Electrical Conductivity versus Device Strains in Different Gas/Vapor Environment

ACS Nano ◽  
2011 ◽  
Vol 5 (8) ◽  
pp. 6516-6526 ◽  
Author(s):  
Jun Yin ◽  
Peipei Hu ◽  
Jin Luo ◽  
Lingyan Wang ◽  
Melissa F. Cohen ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Conductivity ◽  
Flexible Devices ◽  
Film Assembly

scholarly journals Thin-film structures with nanocrystals: an origin of enhanced photo-response

2010 ◽  
Vol 249 ◽  
pp. 012063
Author(s):  
O Goncharova ◽  
R M Montereali ◽  
G Baldacchini
Keyword(s):  
Thin Film ◽  
Photo Response

Development of High-Efficiency Zn2SiO4:Mn Thin Films for Flat Panel Cathodoluminescent Displays

1997 ◽  
Vol 471 ◽  
Author(s):  
J. Liu ◽  
D. C. Morton ◽  
M. R. Miller ◽  
Y. Li ◽  
E. W. Forsythe ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Response Time ◽  
Decay Time ◽  
High Efficiency ◽  
Fast Response ◽  
Flat Panel ◽  
Powder Phosphor ◽  
Fast Response Time

ABSTRACTZn2SiO4:Mn thin films were deposited and studied as thin film phosphors for flat panel cathodoluminescent displays. Crystallized films with improved electrical conductivity were obtained after conventional and rapid thermal annealings in a N2 environment at 850Xy11100 °C for 0.25 to 60 minutes. A maximum cathodoluminescent efficiency of 1.3 Lm/W was achieved under dc excitation at 1500 volts. The luminescent emission from these thin films was peaked around 525 nm. The decay time of these films was controlled in the range of 2 to 10 ms by varying the deposition and annealing parameters. The fast response time of these thin films overcomes the long decay limitation of the Zn2SiO4:Mn powder phosphor in practical display applications.

scholarly journals Band Gap Shift and Electrical Conductivity of (Ag-xSnO2)NPs-β-Carotene Thin Film

2018 ◽  
Vol 1093 ◽  
pp. 012032 ◽  
Author(s):  
Ulwiyatus Sa’adah ◽  
Arif Hidayat ◽  
Solehudin ◽  
Sujito ◽  
Nandang Mufti ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Conductivity ◽  
Band Gap ◽  
Β Carotene

Enhanced UV Photon-response of Tin Nano Cluster Loaded- laser Irradiated ZnO Thin film detector

2011 ◽  
Vol 1288 ◽  
Author(s):  
Rashmi Menon ◽  
K. Sreenivas ◽  
Vinay Gupta
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Surface States ◽  
Response Speed ◽  
Rf Magnetron Sputtering ◽  
Fast Response ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Photo Response

ABSTRACTZinc Oxide (ZnO), II-VI compound semiconductor, is a promising material for ultraviolet (UV) photon sensor applications due to its attractive properties such as good photoconductivity, ease processing at low temperatures and excellent radiation hardness. The rf magnetron sputtering is a suitable deposition technique due to better control over stoichiometry and deposition of uniform film. Studies have shown that the presence of surface defects in ZnO and subsequently their passivation are crucial for enhanced photo-response characteristics, and to obtain the fast response speed. Worldwide efforts are continuing to develop good quality ZnO thin films with novel design structures for realization of an efficient UV photon sensor. In the present work, UV photon sensor is fabricated using a ZnO thin films deposited by rf magnetron sputtering on the corning glass substrate. Photo-response, (Ion/Ioff) of as-grown ZnO film of thickness 100 nm is found to be 3×103 with response time of 90 ms for UV intensity of 140 μW/cm2 (λ = 365 nm). With irradiation on ZnO thin film by pulsed Nd:YAG laser (forth harmonics 266 nm), the sensitivity of the UV sensor is found to enhance. The photo-response increases after laser irradiation to 4x104 with a fast response speed of 35 ms and attributed to the change in surface states and the native defects in the ZnO thin film. Further, enhancement in the ultraviolet (UV) photo-response (8×104) of detector was observed after integrating the nano-scale islands of Sn metal on the surface of laser irradiated ZnO thin film.

Absorber Films of Ag2S and AgBiS2 prepared by Chemical Bath Deposition

2002 ◽  
Vol 730 ◽  
Author(s):  
A. Nuñez Rodriguez ◽  
M.T.S. Nair ◽  
P.K. Nair
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Silver Nitrate ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Optical Band Gap ◽  
Sodium Thiosulfate ◽  
Xrd Pattern ◽  
Glass Substrates

AbstractAg2S thin films of 90 nm to 300 nm in thickness were deposited at 70°C on glass substrates immersed in a bath mixture containing silver nitrate, sodium thiosulfate and dimethylthiourea. When the films are heated in nitrogen at temperatures 200°C to 400°C, crystallinity is improved and XRD pattern similar to that of acanthite is observed. These films possess electrical conductivity of 10-3 (ohm cm)-1, are photoconductive and exhibit an optical band gap of 1.36 eV. When Ag2S thin film is deposited over a thin film of Bi2S3, also obtained by chemical bath deposition from bismuth nitrate, triethanolamine and thioacetamide, and heated at 300°C to 400°C in nitrogen, a ternary compound, AgBiS2 is formed. This material has an electrical conductivity of 5x10-5 (ohm cm)-1, is photoconductive and possesses optical band gap 0.95 eV.

Enhanced ultraviolet photo-response in Dy doped ZnO thin film

2018 ◽  
Vol 123 (5) ◽  
pp. 054502 ◽  
Author(s):  
Pawan Kumar ◽  
Ranveer Singh ◽  
Praveen C. Pandey
Keyword(s):  
Thin Film ◽  
Zno Thin Film ◽  
Photo Response ◽  
Doped Zno

Ferroelectric Oxide Thin Film with an Out-of-Plane Electrical Conductivity

Nano Letters ◽  
2019 ◽  
Vol 20 (2) ◽  
pp. 1047-1053
Author(s):  
Tingting Yao ◽  
Yixiao Jiang ◽  
Chunlin Chen ◽  
Xuexi Yan ◽  
Ang Tao ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Conductivity ◽  
Oxide Thin Film ◽  
Out Of Plane ◽  
Ferroelectric Oxide
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