scholarly journals Recent Advances in Barrier Layer of Cu Interconnects

Materials ◽  
2020 ◽  
Vol 13 (21) ◽  
pp. 5049
Author(s):  
Zhi Li ◽  
Ye Tian ◽  
Chao Teng ◽  
Hai Cao
Keyword(s):  
Barrier Layer ◽  
Vapor Deposition ◽  
Dielectric Layer ◽  
Seed Layer ◽  
Physical Vapor Deposition ◽  
Tantalum Nitride ◽  
High Resistivity ◽  
Future Research ◽  
Barrier Materials ◽  
Recent Advances

The barrier layer in Cu technology is essential to prevent Cu from diffusing into the dielectric layer at high temperatures; therefore, it must have a high stability and good adhesion to both Cu and the dielectric layer. In the past three decades, tantalum/tantalum nitride (Ta/TaN) has been widely used as an inter-layer to separate the dielectric layer and the Cu. However, to fulfill the demand for continuous down-scaling of the Cu technology node, traditional materials and technical processes are being challenged. Direct electrochemical deposition of Cu on top of Ta/TaN is not realistic, due to its high resistivity. Therefore, pre-deposition of a Cu seed layer by physical vapor deposition (PVD) or chemical vapor deposition (CVD) is necessary, but the non-uniformity of the Cu seed layer has a devastating effect on the defect-free fill of modern sub-20 or even sub-10 nm Cu technology nodes. New Cu diffusion barrier materials having ultra-thin size, high resistivity and stability are needed for the successful super-fill of trenches at the nanometer scale. In this review, we briefly summarize recent advances in the development of Cu diffusion-proof materials, including metals, metal alloys, self-assembled molecular layers (SAMs), two-dimensional (2D) materials and high-entropy alloys (HEAs). Also, challenges are highlighted and future research directions are suggested.

Extendibility of Cu Damascene to 0.1 μm Wide Interconnections

1998 ◽  
Vol 514 ◽  
Author(s):  
C-K. Hu ◽  
K. Y. Lee ◽  
L. Gignac ◽  
S. M. Rossnagel ◽  
C. Uzoh ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Vapor Deposition ◽  
Chemical Mechanical Polishing ◽  
Seed Layer ◽  
Physical Vapor Deposition ◽  
Ion Etching ◽  
Damascene Process ◽  
Effective Resistivity ◽  
Ionized Physical Vapor Deposition ◽  
Deposition Techniques

ABSTRACTWe demonstrate the extendibility of the Cu damascene process to 0.1 μm wide lines. Cu interconnects, 0.1 - 1 μm wide, were fabricated by a damascene process that produced planarized lines and vias, imbedded in insulators. This process was defined by 1) trench and via formation in blanket dielectrics using e-beam lithography and reactive ion etching, 2) trench fill using a series of metal depositions, and 3) chemical mechanical polishing to remove the field metals. Physical vapor and ionized physical vapor deposition techniques were used to deposit the adhesion/diffusion barrier liner and the Cu seed layer, respectively. The main Cu conductor was deposited by an electroplating method. The width of lines and vias were varied from 0.1 μm to 1 μm while the thicknesses were held constant at 0.45 μm. A near bamboo-like structure was observed in the sub-μm wide lines. The effective resistivity of the Cu lines was found to be about 2.3 μΩ-cm and was independent of width after annealing at 400 °C.

scholarly journals Clinoenstatite/Tantalum Coating for Enhancement of Biocompatibility and Corrosion Protection of Mg Alloy

2020 ◽  
Vol 11 (2) ◽  
pp. 26 ◽  
Author(s):  
Hamid Reza Bakhsheshi-Rad ◽  
Aliakbar Najafinezhad ◽  
Esah Hamzah ◽  
Ahmad Fauzi Ismail ◽  
Filippo Berto ◽  
...  
Keyword(s):  
Corrosion Rate ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Biomedical Applications ◽  
Tantalum Nitride ◽  
Anticorrosion Property ◽  
Compact Structure ◽  
Electrochemical Tests ◽  
Surface Enhanced ◽  
Zn Alloy

Biodegradable Mg alloys have appeared as the most appealing metals for biomedical applications, particularly as temporary bone implants. However, issues regarding high corrosion rate and biocompatibility restrict their application. Hence, in the present work, nanostructured clinoenstatite (CLT, MgSiO3)/tantalum nitride (TaN) was deposited on the Mg-Ca-Zn alloy via electrophoretic deposition (EPD) along with physical vapor deposition (PVD) to improve the corrosion and biological characteristics of the Mg-Ca-Zn alloy. The TaN intermediate layer with bubble like morphology possessed a compact and homogenous structure with a thickness of about 950 nm while the thick CLT over-layer (~15 μm) displayed a less compact structure containing nano-porosities as well as nanoparticles with spherical morphology. The electrochemical tests demonstrated that the as prepared CLT/TaN film is able to substantially increase the anticorrosion property of Mg-Ca-Zn bare alloy. Cytocompatibility outcomes indicated that formation of CLT and TaN on the Mg bare alloy surface enhanced cell viability, proliferation and growth, implying excellent biocompatibility. Taken together, the CLT/TaN coating exhibits appropriate characteristic including anticorrosion property and biocompatibility in order to employ in biomedical files.

scholarly journals Deposition Methods for Microstructured and Nanostructured Coatings on Metallic Bone Implants: A Review

2017 ◽  
Vol 2017 ◽  
pp. 1-9 ◽  
Author(s):  
Bailey Moore ◽  
Ebrahim Asadi ◽  
Gladius Lewis
Keyword(s):  
Plasma Spray ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Chemical Vapor ◽  
Aerosol Deposition ◽  
Deposition Process ◽  
Future Research ◽  
Bone Implants ◽  
Implant Surface ◽  
Deposition Processes

A review of current deposition processes is presented as they relate to osseointegration of metallic bone implants. The objective is to present a comprehensive review of different deposition processes used to apply microstructured and nanostructured osteoconductive coatings on metallic bone implants. Implant surface topography required for optimal osseointegration is presented. Five of the most widely used osteoconductive coating deposition processes are reviewed in terms of their microstructure and nanostructure, usable thickness, and cost, all of which are summarized in tables and charts. Plasma spray techniques offer cost-effective coatings but exhibit deficiencies with regard to osseointegration such as high-density, amorphous coatings. Electrodeposition and aerosol deposition techniques facilitate the development of a controlled-microstructure coating at a similar cost. Nanoscale physical vapor deposition and chemical vapor deposition offer an alternative approach by allowing the coating of a highly structured surface without significantly affecting the microstructure. Various biomedical studies on each deposition process are reviewed along with applicable results. Suggested directions for future research include further optimization of the process-microstructure relation, crystalline plasma spray coatings, and the deposition of discrete coatings by additive manufacturing.

scholarly journals Synthesis and Characterizations of ZnO Thin Films Grown by Physical Vapor Deposition Technique

2020 ◽  
Vol 1 (4) ◽  
pp. 135-139
Author(s):  
Raghad Mohammed ◽  
Sabah Ahmed ◽  
Ahmed Abdulrahman ◽  
Samir Hamad
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapor Deposition ◽  
High Purity ◽  
Seed Layer ◽  
Physical Vapor Deposition ◽  
Glass Slide ◽  
Zno Thin Films ◽  
Chemical Compositions ◽  
Zno Thin Film

In the current study, Zinc oxide (ZnO) thin films have been synthesized over the whole the glass-slide substrate by utilizing the physical vapor deposition (PVD) technique. The Zinc (Zn) seed layer was deposited by heating the high purity Zn powder by using a molybdenum (Mo) boat at 37.503×10-3 Torr vacuum pressure of the PVD chamber. The ZnO thin films were fabricated by oxidation of the Zn seed layer coated glass-slide substrate at 400 °C. The morphological, chemical compositions, crystal quality, structural and optical properties of fabricated ZnO thin film were characterized and studied utilizing several characterization techniques. The results found that the high distribution density, homogenous, uniform, and high-quality ZnO thin film was grown over the entire substrate. The synthesized ZnO thin film with a thickness of 130 nm was grown with high purity and polycrystalline hexagonal-Wurtzite phase of ZnO. The sharp, and dominant diffraction peak was observed at peak position 34.3375 along (002) plane and c-axis. The investigated crystal size, dislocation density, and interplanar spacing were about 13.33 nm, 5.63×10-5 A°, and 2.609 A°, respectively. Also, UV-visible spectroscopy results show the high transmittance and low absorbance in the visible (Vis.) region and were about 90%, and the transmittance decreases sharply near the UV region at a wavelength around 383 nm. Besides, obtained the energy band-gap (Eg) was about 3.24 eV.

PROPERTIES OF COPPER LAYER ON Si(100) FROM Cu(dmamb)2

2010 ◽  
Vol 17 (03) ◽  
pp. 307-310
Author(s):  
SEONG-EON JIN ◽  
DOHAN LEE ◽  
SEUNGMOO LEE ◽  
JONG-MUN CHOI ◽  
BUMJOON KIM ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Buffer Layer ◽  
Barrier Layer ◽  
Vapor Deposition ◽  
Seed Layer ◽  
Chemical Vapor ◽  
Cu Films ◽  
Seed Layers

Cu seed layer was deposited by chemical vapor deposition using new Cu precursor, Cu(dmamb) 2. The Cu layers still need the barrier layer to prevent the diffusion, so Ta and Ti were used for the barrier layer on Si(100) . Low temperature (LT) copper buffer layer was introduced and the effect of the buffer on the Cu films was investigated. The grown Cu layers were analyzed using FESEM, XRD, and four point probe measurement. The Cu seed layers were successfully deposited using Cu(dmamb) 2 precursor. Better thickness uniformity was obtained in the Cu films with the LT Cu buffer, which lowered the electrical resistivity.

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