Chemically enhanced physical vapor deposition of tantalum nitride-based films for ultra-large-scale integrated devices

2004 ◽  
Vol 22 (6) ◽  
pp. 2734 ◽  
Author(s):  
Ning Li ◽  
D. N. Ruzic ◽  
R. A. Powell
Keyword(s):  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Large Scale ◽  
Tantalum Nitride ◽  
Integrated Devices

scholarly journals Clinoenstatite/Tantalum Coating for Enhancement of Biocompatibility and Corrosion Protection of Mg Alloy

2020 ◽  
Vol 11 (2) ◽  
pp. 26 ◽  
Author(s):  
Hamid Reza Bakhsheshi-Rad ◽  
Aliakbar Najafinezhad ◽  
Esah Hamzah ◽  
Ahmad Fauzi Ismail ◽  
Filippo Berto ◽  
...  
Keyword(s):  
Corrosion Rate ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Biomedical Applications ◽  
Tantalum Nitride ◽  
Anticorrosion Property ◽  
Compact Structure ◽  
Electrochemical Tests ◽  
Surface Enhanced ◽  
Zn Alloy

Biodegradable Mg alloys have appeared as the most appealing metals for biomedical applications, particularly as temporary bone implants. However, issues regarding high corrosion rate and biocompatibility restrict their application. Hence, in the present work, nanostructured clinoenstatite (CLT, MgSiO3)/tantalum nitride (TaN) was deposited on the Mg-Ca-Zn alloy via electrophoretic deposition (EPD) along with physical vapor deposition (PVD) to improve the corrosion and biological characteristics of the Mg-Ca-Zn alloy. The TaN intermediate layer with bubble like morphology possessed a compact and homogenous structure with a thickness of about 950 nm while the thick CLT over-layer (~15 μm) displayed a less compact structure containing nano-porosities as well as nanoparticles with spherical morphology. The electrochemical tests demonstrated that the as prepared CLT/TaN film is able to substantially increase the anticorrosion property of Mg-Ca-Zn bare alloy. Cytocompatibility outcomes indicated that formation of CLT and TaN on the Mg bare alloy surface enhanced cell viability, proliferation and growth, implying excellent biocompatibility. Taken together, the CLT/TaN coating exhibits appropriate characteristic including anticorrosion property and biocompatibility in order to employ in biomedical files.

scholarly journals Recent Advances in Barrier Layer of Cu Interconnects

Materials ◽  
2020 ◽  
Vol 13 (21) ◽  
pp. 5049
Author(s):  
Zhi Li ◽  
Ye Tian ◽  
Chao Teng ◽  
Hai Cao
Keyword(s):  
Barrier Layer ◽  
Vapor Deposition ◽  
Dielectric Layer ◽  
Seed Layer ◽  
Physical Vapor Deposition ◽  
Tantalum Nitride ◽  
High Resistivity ◽  
Future Research ◽  
Barrier Materials ◽  
Recent Advances

The barrier layer in Cu technology is essential to prevent Cu from diffusing into the dielectric layer at high temperatures; therefore, it must have a high stability and good adhesion to both Cu and the dielectric layer. In the past three decades, tantalum/tantalum nitride (Ta/TaN) has been widely used as an inter-layer to separate the dielectric layer and the Cu. However, to fulfill the demand for continuous down-scaling of the Cu technology node, traditional materials and technical processes are being challenged. Direct electrochemical deposition of Cu on top of Ta/TaN is not realistic, due to its high resistivity. Therefore, pre-deposition of a Cu seed layer by physical vapor deposition (PVD) or chemical vapor deposition (CVD) is necessary, but the non-uniformity of the Cu seed layer has a devastating effect on the defect-free fill of modern sub-20 or even sub-10 nm Cu technology nodes. New Cu diffusion barrier materials having ultra-thin size, high resistivity and stability are needed for the successful super-fill of trenches at the nanometer scale. In this review, we briefly summarize recent advances in the development of Cu diffusion-proof materials, including metals, metal alloys, self-assembled molecular layers (SAMs), two-dimensional (2D) materials and high-entropy alloys (HEAs). Also, challenges are highlighted and future research directions are suggested.

scholarly journals Physical vapor deposition of large-scale PbSe films and its applications in pulsed fiber lasers

Nanophotonics ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 2367-2375
Author(s):  
Qun Gao ◽  
Hao Yang ◽  
Cuichen Hu ◽  
Zhiwen He ◽  
Hua Lu ◽  
...  
Keyword(s):  
Polyvinyl Alcohol ◽  
Saturable Absorber ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Large Scale ◽  
Mode Locking ◽  
Environmental Stability ◽  
Saturable Absorption ◽  
Optical Modulators ◽  
Polyvinyl Alcohol Film

AbstractLead selenide (PbSe) is a new emerging semiconductor with layer-dependent bandgap that has attracted much interest due to its high infrared response and good environmental stability. We have prepared large-scale PbSe films with the area of 7 cm2 and thickness of 25 nm based on physical vapor deposition approach at 160°C. The PbSe films exhibit saturable absorption property at 1.55 μm and a polarization-sensitive saturable absorber is obtained by growing PbSe on D-shaped fiber. Single-pulse with the duration of 490 fs is generated at the pump of 12 mW and the mode-locking operation is maintained at the pump of 1500 mW, indicating the high damage threshold of the D-shaped fiber based saturable absorber. Two polarization-insensitive saturable absorbers are achieved by depositing PbSe on fiber facet and polyvinyl alcohol film, respectively. For fiber facet (polyvinyl alcohol film) based saturable absorber, the repetition rate of Q-switched pulses increases from 8.6 (16.3) kHz to 45.4 (59.2) kHz while the duration decreases from 7.92 (12) μs to 2.06 (3.12) μs by tuning the pump from 15 mW to 90 (60) mW. Such large-scale PbSe films possess features of low cost and high modulation ability, and can find important applications in infrared optical modulators and detectors.

TEM characterization of WSix films

1994 ◽  
Vol 52 ◽  
pp. 848-849
Author(s):  
V. C. Kannan ◽  
S. M. Merchant ◽  
R. B. Irwin ◽  
A. K. Nanda ◽  
M. Sundahl ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Vapor Deposition ◽  
High Purity ◽  
Physical Vapor Deposition ◽  
Thermal Treatments ◽  
Rapid Thermal Anneal ◽  
Tungsten Silicide ◽  
Tem Characterization ◽  
Metal Silicides

Metal silicides such as WSi2, MoSi2, TiSi2, TaSi2 and CoSi2 have received wide attention in recent years for semiconductor applications in integrated circuits. In this study, we describe the microstructures of WSix films deposited on SiO2 (oxide) and polysilicon (poly) surfaces on Si wafers afterdeposition and rapid thermal anneal (RTA) at several temperatures. The stoichiometry of WSix films was confirmed by Rutherford Backscattering Spectroscopy (RBS). A correlation between the observed microstructure and measured sheet resistance of the films was also obtained.WSix films were deposited by physical vapor deposition (PVD) using magnetron sputteringin a Varian 3180. A high purity tungsten silicide target with a Si:W ratio of 2.85 was used. Films deposited on oxide or poly substrates gave rise to a Si:W ratio of 2.65 as observed by RBS. To simulatethe thermal treatments of subsequent processing procedures, wafers with tungsten silicide films were subjected to RTA (AG Associates Heatpulse 4108) in a N2 ambient for 60 seconds at temperatures ranging from 700° to 1000°C.

scholarly journals Noble Metals for Modern Implant Materials: MOCVD of Film Structures and Cytotoxical, Antibacterial, and Histological Studies

Biomedicines ◽  
2021 ◽  
Vol 9 (8) ◽  
pp. 851
Author(s):  
Svetlana I. Dorovskikh ◽  
Evgeniia S. Vikulova ◽  
Elena V. Chepeleva ◽  
Maria B. Vasilieva ◽  
Dmitriy A. Nasimov ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Noble Metals ◽  
Mononuclear Cells ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Ti Alloy ◽  
Peripheral Blood Mononuclear ◽  
Histological Studies

This work is aimed at developing the modification of the surface of medical implants with film materials based on noble metals in order to improve their biological characteristics. Gas-phase transportation methods were proposed to obtain such materials. To determine the effect of the material of the bottom layer of heterometallic structures, Ir, Pt, and PtIr coatings with a thickness of 1.4–1.5 μm were deposited by metal–organic chemical vapor deposition (MOCVD) on Ti6Al4V alloy discs. Two types of antibacterial components, namely, gold nanoparticles (AuNPs) and discontinuous Ag coatings, were deposited on the surface of these coatings. AuNPs (11–14 nm) were deposited by a pulsed MOCVD method, while Ag films (35–40 nm in thickness) were obtained by physical vapor deposition (PVD). The cytotoxic (24 h and 48 h, toward peripheral blood mononuclear cells (PBMCs)) and antibacterial (24 h) properties of monophase (Ag, Ir, Pt, and PtIr) and heterophase (Ag/Pt, Ag/Ir, Ag/PtIr, Au/Pt, Au/Ir, and Au/PtIr) film materials deposited on Ti-alloy samples were studied in vitro and compared with those of uncoated Ti-alloy samples. Studies of the cytokine production by PBMCs in response to incubation of the samples for 24 and 48 h and histological studies at 1 and 3 months after subcutaneous implantation in rats were also performed. Despite the comparable thickness of the fibrous capsule after 3 months, a faster completion of the active phase of encapsulation was observed for the coated implants compared to the Ti alloy analogs. For the Ag-containing samples, growth inhibition of S. epidermidis, S. aureus, Str. pyogenes, P. aeruginosa, and Ent. faecium was observed.

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