scholarly journals Rapid Thermal Annealing of Double Perovskite Thin Films Formed by Polymer Assisted Deposition

Materials ◽  
2020 ◽  
Vol 13 (21) ◽  
pp. 4966
Author(s):  
Hailin Wang ◽  
Carlos Frontera ◽  
Benjamín Martínez ◽  
Narcís Mestres
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Magnetic Behavior ◽  
Double Perovskite ◽  
Epitaxial Films ◽  
Epitaxial Thin Films ◽  
Heating Rates ◽  
Solution Deposition ◽  
Final Microstructure

The annealing process is an important step common to epitaxial films prepared by chemical solution deposition methods. It is so because the final microstructure of the films can be severely affected by the precise features of the thermal processing. In this work we analyze the structural and magnetic properties of double perovskite La2CoMnO6 and La2NiMnO6 epitaxial thin films prepared by polymer-assisted deposition (PAD) and crystallized by rapid thermal annealing (RTA). It is found that samples prepared by RTA have similar values of saturation magnetization and Curie temperature to their counterparts prepared by using conventional thermal annealing (CTA) processes, thus indicating low influence of the heating rates on the B-B’ site cationic ordering of the A2BB’O6 double perovskite structure. However, a deeper analysis of the magnetic behavior suggested some differences in the actual microstructure of the films.

scholarly journals Aqueous Chemical Solution Deposition of Functional Double Perovskite Epitaxial Thin Films

2020 ◽  
Vol 26 (42) ◽  
pp. 9338-9347 ◽  
Author(s):  
Hailin Wang ◽  
Carlos Frontera ◽  
Javier Herrero‐Martín ◽  
Alberto Pomar ◽  
Pere Roura ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Double Perovskite ◽  
Epitaxial Thin Films ◽  
Chemical Solution ◽  
Solution Deposition

Leakage Current Reduction and Ferroelectric Property of BiFe1-xCoxO3 Thin Films Prepared by Chemical Solution Deposition Using Rapid Thermal Annealing

2009 ◽  
Vol 1199 ◽  
Author(s):  
TruongTho Nguyen ◽  
Takeshi Kanashima ◽  
Masanori Okuyama
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Chemical Solution Deposition ◽  
Hysteresis Loops ◽  
Zero Field ◽  
Apparent Difference ◽  
Chemical Solution ◽  
Solution Deposition

AbstractFerroelectric Bi1.1Fe0.9Co0.1O3 (BFCO) thin films were prepared on Pt/TiO2/SiO2/Si substrates by chemical solution deposition method using rapid thermal annealing (RTA). The thickness of all BFCO thin films is about 100 nm. Although the BFCO prepared at 545°C has a large value of difference of polarization at zero field, 88 C/cm2, the P-E hysteresis loop of the BFCO thin film prepared at 520°C looks like more saturated and shows 47 C/cm2 of difference of polarization at zero field in the applied electric field of 2 MV/cm. The leakage current of the BFCO film annealed at 520°C, is about 2 × 10-2 A/cm2 at room temperature (RT). Moreover, it is also shown that the saturated possibility of P-E hysteresis loops and in 2 MV/cm their apparent difference of polarization at zero field depend on not only the leakage current but also scanning frequency used to measure BFCO thin films. Accordingly, the P-E hysteresis loops of BFCO thin films prepared from 520°C to 545°C seem to be saturated at high frequency from 10 KHz to 20 KHz when these samples are measured at RT.

L10 Ordering of FePt Thin Films by Rapid Thermal Annealing

2003 ◽  
Vol 27 (11) ◽  
pp. 1083-1086 ◽  
Author(s):  
H. Ito ◽  
T. Kusunoki ◽  
H. Saito ◽  
S. Ishio
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Fept Thin Films

Effect of rapid thermal annealing on sprayed Cu2SnS3 thin films for solar-cell application

2020 ◽  
Vol 59 (10) ◽  
pp. 105503
Author(s):  
Wafaa Magdy ◽  
Ayaka Kanai ◽  
F. A. Mahmoud ◽  
E. T. El Shenawy ◽  
S. A. Khairy ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solar Cell Application

Rapid Thermal Annealing Effects in CdTe (111) Thin Films Grown on GaAs (100) Substrates

1996 ◽  
Vol 35 (Part 1, No. 8) ◽  
pp. 4220-4224 ◽  
Author(s):  
M. D. Kim ◽  
T. W. Kang ◽  
M. S. Han ◽  
T. W. Kim
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Effects

Rapid Thermal Transformation of A-15 Crystal Structure Metallic Thin Films

1995 ◽  
Vol 387 ◽  
Author(s):  
M. J. O'Keefe ◽  
C. L. Cerny
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Physical Vapor Deposition ◽  
Thermal Transformation ◽  
The Body ◽  
Cubic Phase ◽  
Body Centered Cubic ◽  
Body Center Cubic

AbstractPhysical vapor deposition of Group VI elements (Cr, Mo, W) can lead to the formation of a metastable A-15 crystal structure under certain processing conditions. Typically, a thermally induced transformation of the metastable A-15 structure into the equilibrium body centered cubic structure has been accomplished by conventional furnace annealing at T/Tm ≈ 0.3 from tens of minutes to several hours. In this study we report on the use of rapid thermal annealing to transform sputter deposited A- 15 crystal structure tungsten and chromium thin films into body centered cubic films within the same temperature range but at times on the order of one minute. The minimum annealing times and temperatures required for complete transformation of the A-15 phase into the BCC phase varied from sample to sample, indicating that the transformation was dependent on the film characteristics. The electrical resistivity of A-15 Cr and W films was measured before and after rapid thermal annealing and was found to significantly decrease after transformation into the body center cubic phase.

STRUCTURAL CHARACTERISTICS OF (Ba,Sr)TiO3 THIN FILMS BY RAPID THERMAL ANNEALING

2007 ◽  
Vol 14 (01) ◽  
pp. 141-145
Author(s):  
Q. Y. ZHANG ◽  
S. W. JIANG ◽  
Y. R. LI
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Heating Rate ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Rapid Heating ◽  
Structural Characteristics ◽  
High Heating Rate ◽  
Duration Time ◽  
Temperature Heating

The rapid thermal annealing (RTA) process was adapted to crystallize the amorphous ( Ba,Sr ) TiO 3 thin films prepared on Si (111) substrates by RF magnetic sputtering deposition. The effect of annealing temperature, heating rate and duration time on crystallization was studied through X-ray diffraction and atomic force microscopy. The result shows that the crystallinity and grain size were strongly dependent on the temperature, heating rate, and duration time. Higher heating rate leads to smaller grain size. In high heating rate, the grain size shows different dependence of temperature from that of low heating rate. For a heating rate of 50°C/s, the grain size decreased with temperature increasing below 700°C, while after that temperature, the grain size increased slightly with the temperature increasing. At a certain temperature, the crystallinity and surface roughness improved with increase in annealing time, while grain size changed little. The effect of rapid heating rate on the nucleation and grain growth has been discussed, which contributes to the limited grain size of the annealed ( Ba,Sr ) TiO 3 thin films.

Rapid thermal annealing of YBaCuO thin films sputtered on substrates

1990 ◽  
Vol 164-165 ◽  
pp. 359-365 ◽  
Author(s):  
J. Baixeras ◽  
F. Carrie ◽  
F.Hosseini Teherani ◽  
A. Kreisler
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing
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