scholarly journals Carrier Dynamic Investigations of AlGaInAs Quantum Well Revealed by Temperature-Dependent Time-Resolved Photoluminescence

Materials ◽  
2020 ◽  
Vol 13 (19) ◽  
pp. 4227
Author(s):  
Yue Song ◽  
Yongyi Chen ◽  
Ligong Zhang ◽  
Yugang Zeng ◽  
Cheng Qiu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Decay Channel ◽  
Relaxation Times ◽  
Emission Spectra ◽  
Nonradiative Recombination ◽  
Temperature Dependent ◽  
Time Resolved ◽  
Carrier Relaxation ◽  
Carrier Dynamic ◽  
Time Resolved Photoluminescence

AlGaInAs quantum well (QW) lasers have great potential in the application fields of optical communications and eye-safety lidars, owing to the advantages of good gain performance. A large amount of experimental evidence indicated that carrier dynamic affects the resonant frequency and modulation response performance of QW lasers. However, the mechanism of carrier dynamic in AlGaInAs QW structure is still ambiguous for complicated artificial multilayers. In this paper, the carrier dynamic of AlGaInAs QW structure was investigated by temperature-dependent time-resolved photoluminescence (TRPL) in the range of 14 to 300 K. Two relaxation times (a fast component and a slow one) have a major impact on the PL emission spectra of the AlGaInAs QW below 200 K. The carriers prefer a fast decay channel in the low temperature regime, whereas the slow one a higher temperature. An unconventional temperature dependence of carrier relaxation is observed in both decay processes. The carriers’ lifetime decreases with the temperature increasing till 45 K and then increases with temperature up to 250 K. It is quite different from that in the bulk semiconductor. The mechanism of temperature-dependent carrier relaxation at temperatures above 45 K is a combination of dark state occupation and a nonradiative recombination process.

Photoluminescence Properties Of Gan/AlGaN Multiple Quantum Well Microdisks

1997 ◽  
Vol 482 ◽  
Author(s):  
R. A. Mair ◽  
K. C. Zeng ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
B. Zhang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Emission Spectra ◽  
Fold Increase ◽  
Multiple Quantum ◽  
Photoluminescence Properties ◽  
Transition Intensity ◽  
Exciton Transition ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

AbstractAn array of microdisks with diameter of about 9 μm and spacing of 50 μm has been fabricated by dry etching from a 50 Å/50 Å GaN/AlxGa1-xN (x∼ 0.07) multiple quantum well (MQW) structure grown by reactive molecular beam epitaxy. The as-grown MQWs and the microdisk structures have been studied by picosecond time-resolved photoluminescence (PL) spectroscopy. PL emission spectra and decay dynamics were measured at various temperatures and pump intensities. With respect to the original MQWs, we observe strong enhancement of the transition intensity and lifetime for both the intrinsic and barrier transitions. The intrinsic transition is excitonic at low temperatures and exhibits an approximate 10 fold increase in both lifetime and PL intensity upon formation of the microdisks. The exciton transition magnitude diminishes rapidly with increased temperature however, while the enhanced lifetime shows little change. At room temperature the dominant GaN well transition is found to be band-to-band in nature as evidenced by effective band gap shrinkage and band-filling effects seen within the PL spectrum. The implications of our results to III-Nitride microdisk lasers are discussed.

scholarly journals The thermal stability of FAPbBr3 nanocrystals from temperature-dependent photoluminescence and first-principles calculations

RSC Advances ◽  
2020 ◽  
Vol 10 (72) ◽  
pp. 44373-44381
Author(s):  
Xiaozhe Wang ◽  
Qi Wang ◽  
Zhijun Chai ◽  
Wenzhi Wu
Keyword(s):  
First Principles ◽  
First Principle ◽  
First Principles Calculations ◽  
Temperature Dependent ◽  
Time Resolved ◽  
First Principle Calculations ◽  
Steady State Time ◽  
Time Resolved Photoluminescence ◽  
Thermal Stability Of ◽  
Temperature Dependent Photoluminescence

The thermal properties of FAPbBr3 perovskite nanocrystals (PNCs) is investigated by use of temperature-dependent steady-state/time-resolved photoluminescence and first-principle calculations.

scholarly journals Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures.

1999 ◽  
Vol 4 (1) ◽  
Author(s):  
A.N. Cartwright ◽  
Paul M. Sweeney ◽  
Thomas Prunty ◽  
David P. Bour ◽  
Michael Kneissl
Keyword(s):  
Quantum Well ◽  
Electric Field Distribution ◽  
Theoretical Calculations ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Quantum Well Structures ◽  
Piezoelectric Field ◽  
Piezoelectric Fields ◽  
Time Resolved Photoluminescence

The presence of piezoelectric fields within p-i-n GaN/InGaN multiple quantum well structures is discussed. Time integrated and time-resolved photoluminescence measurements and theoretical calculations of the effect of these fields is presented. Furthermore, a description of how these fields influence the carrier dynamics and a discussion of how the piezoelectric field effects the design of GaN/InGaN devices is presented.

UNDERSTANDING ULTRAVIOLET EMITTER PERFORMANCE USING INTENSITY DEPENDENT TIME-RESOLVED PHOTOLUMINESCENCE

2007 ◽  
Vol 17 (01) ◽  
pp. 179-188 ◽  
Author(s):  
MICHAEL WRABACK ◽  
GREGORY A. GARRETT ◽  
ANAND V. SAMPATH ◽  
PAUL H. SHEN
Keyword(s):  
Radiative Lifetime ◽  
Active Regions ◽  
Pump Intensity ◽  
Performance Comparison ◽  
Nonradiative Recombination ◽  
Extended Defects ◽  
Light Emitters ◽  
Time Resolved ◽  
Photoluminescence Studies ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence studies of nitride semiconductors and ultraviolet light emitters comprised of these materials are performed as a function of pump intensity as a means of understanding and evaluating device performance. Comparison of time-resolved photoluminescence (TRPL) on UV LED wafers prior to fabrication with subsequent device testing indicate that the best performance is attained from active regions that exhibit both reduced nonradiative recombination due to saturation of traps associated with point and extended defects and concomitant lowering of radiative lifetime with increasing carrier density. Similar behavior is observed in optically pumped UV lasers. Temperature and intensity dependent TRPL measurements on a new material, AlGaN containing nanoscale compositional inhomogeneities (NCI), show that it inherently combines inhibition of nonradiative recombination with reduction of radiative lifetime, providing a potentially higher efficiency UV emitter active region.

Time‐resolved photoluminescence study on AlxGa1−xAs spontaneous vertical quantum well structures

1996 ◽  
Vol 68 (23) ◽  
pp. 3221-3223 ◽  
Author(s):  
Noritaka Usami ◽  
Wugen Pan ◽  
Hiroyuki Yaguchi ◽  
Ryoichi Ito ◽  
Kentaro Onabe ◽  
...  
Keyword(s):  
Quantum Well ◽  
Time Resolved ◽  
Quantum Well Structures ◽  
Photoluminescence Study ◽  
Time Resolved Photoluminescence

Instrumentation for Reliably Determining Porous Silicon Photoluminescence Responses to Gaseous Analyte Vapors

2016 ◽  
Vol 70 (12) ◽  
pp. 1974-1980 ◽  
Author(s):  
Justin M. Reynard ◽  
Nathan S. Van Gorder ◽  
Caley A. Richardson ◽  
Richie D. Eriacho ◽  
Frank V. Bright
Keyword(s):  
Porous Silicon ◽  
Vapor Concentration ◽  
Photoluminescence Intensity ◽  
Spectral Measurements ◽  
Temperature Dependent ◽  
Time Resolved ◽  
Hyper Spectral ◽  
New Instrumentation ◽  
Time Resolved Photoluminescence ◽  
New System

We report new instrumentation for rapidly and reliably measuring the temperature-dependent photoluminescence response from porous silicon as a function of analyte vapor concentration. The new system maintains the porous silicon under inert conditions and it allows on-the-fly steady-state and time-resolved photoluminescence intensity and hyper-spectral measurements between 293 K and 450 K. The new system yields reliable data at least 100-fold faster in comparison to previous instrument platforms.

Spectroscopic System for Direct Lanthanide Photoluminescence Spectroscopy with Nanomolar Detection Limits

2009 ◽  
Vol 63 (5) ◽  
pp. 483-493 ◽  
Author(s):  
Christopher M. Andolina ◽  
William G. Holthoff ◽  
Phillip M. Page ◽  
Ryan A. Mathews ◽  
Janet R. Morrow ◽  
...  
Keyword(s):  
Aqueous Solutions ◽  
Ethylenediaminetetraacetic Acid ◽  
Bound Water ◽  
Emission Spectra ◽  
Lanthanide Ions ◽  
Visible Range ◽  
Time Resolved ◽  
Nanomolar Detection ◽  
Time Resolved Photoluminescence ◽  
The Eu

A new spectroscopic system for direct photoluminescence of lanthanide ions (Ln(III)) through electronic transitions within the 4fn manifold is described. The system is based on an injection seeded frequency tripled (λ = 355 nm) Nd:YAG pump laser coupled with a master oscillator power oscillator (MOPO). The MOPO delivers an average pulse energy of ⪝60 mJ/pulse, is continuously tunable from 425 to 690 nm (Signal) and 735 to 1800 nm (Idler) with a linewidth of <0.2 cm−1, and has a pulse duration of 10–12 ns. Aqueous solutions containing two polyaminocarboxylate complexes, ethylenediaminetetraacetic acid (EDTA) and diethylenetriaminepentaacetic acid (DTPA), and Ln3+ aqua ion for several lanthanides including Eu(III), Tb(III), Dy(III), and Sm(III)) are used as steady-state and time-resolved photoluminescence standards. The versatility of the instrument is demonstrated by excitation scans over a broad visible range for aqueous solutions of complexes of Eu(III), Dy(III), Sm(III), and Tb(III). The Eu(III) excitation band (7Fo→5Do) is recorded over a range of complex concentrations that are 1000–fold less than reported previously, including Eu(EDTA) (1.00 nM), Eu(DTPA) (1.00 nM), and Eu(III) aqua ion (50.0 nM). Emission spectra are recorded in the visible range for Ln(III) complexes at pH 6.5 and 1.00 mM. Excited-state lifetimes for the standards were constant as a function of concentration from 10.0 nM to 1.00 mM for Eu(EDTA) and Eu(DTPA) and from 100 nM to 1.00 mM for Eu(III) aqua ion. Photoluminescence lifetimes in H2O and D2O are recorded and used to calculate the number of bound water molecules for all complexes.

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