scholarly journals Realization of Deep UV Plasmonic Enhancement to Photo Response through Al Mesh

Materials ◽  
2020 ◽  
Vol 13 (15) ◽  
pp. 3252
Author(s):  
Gaoming Li ◽  
Jingwen Zhang ◽  
Yaoting Hu ◽  
Yongning He
Keyword(s):  
High Performance ◽  
Optical Constants ◽  
Fabrication Method ◽  
Plasmonic Enhancement ◽  
Uv Detectors ◽  
Uv Photodetectors ◽  
Plasmonic Structures ◽  
Supporting Layer ◽  
Photo Response ◽  
Deep Uv

High-performance UV detectors are of great significance for various applications. Plasmonic structures enable great improvement of the performance of detectors. However, to push the plasmonic enhancement to photo response into the deep-UV region presents some challenges. In this work, we found that the optical properties of the supporting layer play important roles in achieving the optimal plasmonic enhancement. Therefore, we fully considered the dependence of the optical constants of the MgZnO supporting layer, which is a promising material to realize deep-UV photodetectors, on microstructure and crystalline quality, which are related to the fabrication method. Based on the optical constants, we designed an Al mesh plasmonic structure and fabricated it with a polystyrene monolayer as a mask. Finally, we demonstrated a three-times enhancement to photo response with UV radiation at 254 nm.

scholarly journals Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors

AIP Advances ◽  
2016 ◽  
Vol 6 (8) ◽  
pp. 085117 ◽  
Author(s):  
R. Velazquez ◽  
A. Aldalbahi ◽  
M. Rivera ◽  
P. Feng
Keyword(s):  
High Performance ◽  
Single Crystalline ◽  
Uv Photodetectors ◽  
Deep Uv

scholarly journals High-performance solar-blind flexible deep-UV photodetectors based on quantum dots synthesized by femtosecond-laser ablation

Nano Energy ◽  
2018 ◽  
Vol 48 ◽  
pp. 551-559 ◽  
Author(s):  
Somak Mitra ◽  
Assa Aravindh ◽  
Gobind Das ◽  
Yusin Pak ◽  
Idris Ajia ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Laser Ablation ◽  
Femtosecond Laser ◽  
High Performance ◽  
Femtosecond Laser Ablation ◽  
Uv Photodetectors ◽  
Solar Blind ◽  
Deep Uv

scholarly journals High-Performance and Self-Powered Deep UV Photodetectors Based on High Quality 2D Boron Nitride Nanosheets

Nanomaterials ◽  
2017 ◽  
Vol 7 (12) ◽  
pp. 454 ◽  
Author(s):  
Ali Aldalbahi ◽  
Manuel Rivera ◽  
Mostafizur Rahaman ◽  
Andrew Zhou ◽  
Waleed Mohammed Alzuraiqi ◽  
...  
Keyword(s):  
Boron Nitride ◽  
High Performance ◽  
High Quality ◽  
Uv Photodetectors ◽  
Boron Nitride Nanosheets ◽  
Deep Uv ◽  
Self Powered

Highly selective ozone-treated β-Ga2O3 solar-blind deep-UV photodetectors

2020 ◽  
Vol 117 (26) ◽  
pp. 261101
Author(s):  
Suhyun Kim ◽  
Jihyun Kim
Keyword(s):  
Uv Photodetectors ◽  
Solar Blind ◽  
Deep Uv

Integrated Flexible Ga 2 O 3 Deep UV Photodetectors Powered by Environmental Electromagnetic Radiation Energy

2021 ◽  
Vol 6 (3) ◽  
pp. 2000945
Author(s):  
Tao Wang ◽  
Huili Liang ◽  
Zuyin Han ◽  
Yanxin Sui ◽  
Zengxia Mei
Keyword(s):  
Electromagnetic Radiation ◽  
Radiation Energy ◽  
Uv Photodetectors ◽  
Deep Uv

High performance self-powered CuZnS/GaN UV photodetectors with ultrahigh on/off ratio (3 × 108)

2021 ◽  
Vol 9 (14) ◽  
pp. 4799-4807
Author(s):  
Yong Zhang ◽  
Weidong Song
Keyword(s):  
Chemical Bath Deposition ◽  
High Performance ◽  
Response Speed ◽  
Fast Response ◽  
Uv Photodetector ◽  
Uv Photodetectors ◽  
Simple Chemical ◽  
Self Powered

P-CuZnS/n-GaN UV photodetector is prepared by a simple chemical bath deposition, showing excellent self-powered properties, including ultrahigh on/off ratio (3 × 108), fast response speed (0.14/40 ms) and large detectivity of 3 × 1013 Jones.

Chemical amplification & dissolution inhibition: a novel high performance positive tone deep UV resist.

1992 ◽  
Vol 5 (1) ◽  
pp. 55-66 ◽  
Author(s):  
GEORG PAWLOWSKI ◽  
KLAUS-JÜRGEN PRZYBILLA ◽  
WALTER SPIESS ◽  
HORST WENGENROTH ◽  
HORST RÖSCHERT
Keyword(s):  
High Performance ◽  
Chemical Amplification ◽  
Deep Uv

High quality AlN for deep UV photodetectors

2009 ◽  
Vol 95 (5) ◽  
pp. 054101 ◽  
Author(s):  
S. Nikishin ◽  
B. Borisov ◽  
M. Pandikunta ◽  
R. Dahal ◽  
J. Y. Lin ◽  
...  
Keyword(s):  
High Quality ◽  
Uv Photodetectors ◽  
Deep Uv

Selective 4H-SiC UV Detectors

2013 ◽  
Vol 740-742 ◽  
pp. 1014-1017
Author(s):  
Evgenia V. Kalinina ◽  
O. Konstantinov ◽  
A.A. Lebedev ◽  
Yu. Gol’dberg
Keyword(s):  
Quantum Efficiency ◽  
Uv Radiation ◽  
Wavelength Range ◽  
Optical Transition ◽  
Human Beings ◽  
Radiation Level ◽  
Uv Detectors ◽  
Uv Photodetectors ◽  
Oncological Diseases ◽  
Direct Optical Transition

Carcinogenic (bactericidal) radiation (λ = 200–300 nm with a peak at 254 nm) is present in natural (Sun) and artificial (lamps) source of UV radiation. Its intensity is very low as compared to other types of radiation, but it strongly affects the health of human beings. To prevent oncological diseases, it is important to monitor the carcinogenic radiation level; i.e., selective photodetectors are required. A UV photodetectors based on n-4H-SiC Schottly barriers and p+-n junctions are proposed. The quantum efficiency spectrum of such detectors is very close to the spectrum of relative action of carcinogenic radiation on human beings due to the direct optical transition at 4.9 eV in 4H-SiC. The quantum efficiency (at the spectral peak 254 nm) amounts to about 0.3 electrons/photon for virtually zero sensitivity in other spectral regions. Quantum efficiency in the wavelength range 247–254 nm is practically independent of temperature in the range from −100 to +300°C.

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