scholarly journals Floating Ni Capping for High-Mobility p-Channel SnO Thin-Film Transistors

Materials ◽  
2020 ◽  
Vol 13 (14) ◽  
pp. 3055 ◽  
Author(s):  
Min-Gyu Shin ◽  
Kang-Hwan Bae ◽  
Hyun-Seok Cha ◽  
Hwan-Seok Jeong ◽  
Dae-Hwan Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Electric Field Distribution ◽  
Hole Concentration ◽  
High Mobility ◽  
Field Effect Mobility ◽  
Capping Layer ◽  
Vertical Electric Field ◽  
Enhanced Mobility

We utilized Ni as a floating capping layer in p-channel SnO thin-film transistors (TFTs) to improve their electrical performances. By utilizing the Ni as a floating capping layer, the p-channel SnO TFT showed enhanced mobility as high as 10.5 cm2·V−1·s−1. The increase in mobility was more significant as the length of Ni capping layer increased and the thickness of SnO active layer decreased. The observed phenomenon was possibly attributed to the changed vertical electric field distribution and increased hole concentration in the SnO channel by the floating Ni capping layer. Our experimental results demonstrate that incorporating the floating Ni capping layer on the channel layer is an effective method for increasing the field-effect mobility in p-channel SnO TFTs.

Dependence of Field-Effect Mobility on Deposition Conditions in a-Si:H TFT

1994 ◽  
Vol 336 ◽  
Author(s):  
Y. Chida ◽  
M. Kondo ◽  
G. Ganguly ◽  
A. Matsuda
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Performance ◽  
High Mobility ◽  
High Electron ◽  
Field Effect Mobility ◽  
Si Substrate ◽  
High Electron Mobility ◽  
Deposition Conditions

ABSTRACTHigh electron Mobility (over 3 cm2/Vs) thin film transistors (TFTs) have been fabricated using a-Si:H on thermally oxidized crystalline Si substrate. The procedures for fabricating the high performance TFTs are presented and the possible reasons for the high mobility are discussed.

The importance of spinning speed in fabrication of spin-coated organic thin film transistors: Film morphology and field effect mobility

2014 ◽  
Vol 104 (23) ◽  
pp. 233306 ◽  
Author(s):  
Kenji Kotsuki ◽  
Hiroshige Tanaka ◽  
Seiji Obata ◽  
Sven Stauss ◽  
Kazuo Terashima ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Organic Thin Film Transistors ◽  
Film Morphology ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Spinning Speed

Remarkable Increase in Field Effect Mobility of Amorphous IZTO Thin-Film Transistors With Purified ZrOxGate Insulator

2018 ◽  
Vol 39 (3) ◽  
pp. 371-374 ◽  
Author(s):  
Ravindra Naik Bukke ◽  
Christophe Avis ◽  
Mude Narendra Naik ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Remarkable Increase

Hydrogenation Effect of Amorphous Silicon Thin Film Transistors by Atmospheric Pressure CVD

1993 ◽  
Vol 297 ◽  
Author(s):  
Byung Chul Ahn ◽  
Jeong Hyun Kim ◽  
Dong Gil Kim ◽  
Byeong Yeon Moon ◽  
Kwang Nam Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
Hydrogenation Effect

The hydrogenation effect was studied in the fabrication of amorphous silicon thin film transistor using APCVD technique. The inverse staggered type a-Si TFTs were fabricated with the deposited a-Si and SiO2 films by the atmospheric pressure (AP) CVD. The field effect mobility of the fabricated a-Si TFT is 0.79 cm2/Vs and threshold voltage is 5.4V after post hydrogenation. These results can be applied to make low cost a-Si TFT array using an in-line APCVD system.

scholarly journals Improving the electrical performance of solution processed oligothiophene thin-film transistors via structural similarity blending

2017 ◽  
Vol 5 (21) ◽  
pp. 5048-5054 ◽  
Author(s):  
Tim Leydecker ◽  
Laura Favaretto ◽  
Duc Trong Duong ◽  
Gabriella Zappalà ◽  
Karl Börjesson ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Structural Similarity ◽  
Single Component ◽  
Electrical Performance ◽  
Field Effect Mobility ◽  
Solution Processed

Here we show that the blending of structurally similar oligothiophene molecules is an effective approach to improve the field-effect mobility and Ion/Ioff as compared to single component based transistors.

Instability of OTFT with Organic Gate Dielectrics

2007 ◽  
Vol 124-126 ◽  
pp. 407-410
Author(s):  
Sang Chul Lim ◽  
Seong Hyun Kim ◽  
Gi Heon Kim ◽  
Jae Bon Koo ◽  
Jung Hun Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Gate Dielectrics ◽  
Gate Insulator ◽  
Semiconductor Layer ◽  
Field Effect Mobility ◽  
Current Ratio ◽  
Dielectric Thickness ◽  
Inverter Circuit

We report the effects of instability with gate dielectrics of pentacene thin film transistors (OTFTs) inverter circuits. We used to the UV sensitive curable resin and poly-4-vinylphenol(PVP) by gate dielectrics. The inverter supply bias is VDD= -40 V. For a given dielectric thickness and applied voltage, pentacene OTFTs with inverter circuits measurements field effect mobility, on-off current ratio, Vth. The field effect mobility 0.03~0.07 cm2/Vs, and the threshold voltage is -3.3 V ~ -8.8 V. The on- and off-state currents ratio is about 103~106. From the OTFT device and inverter circuit measurement, we observed hysteresis behavior was caused by interface states of between the gate insulator and the pentacene semiconductor layer.

Effect of High-Speed Blade Coating on Electrical Characteristics in Polymer Based Transistors

2020 ◽  
Vol 20 (9) ◽  
pp. 5486-5490
Author(s):  
Jun-Ik Park ◽  
Hyun-Seok Jeong ◽  
Premkumar Vincent ◽  
Jihwan Park ◽  
Do-Kyung Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Conjugated Polymer ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Speed ◽  
Electrical Characteristics ◽  
Field Effect Mobility ◽  
Polymer Thin Film ◽  
Blade Coating

We explore the effect of high-speed blade coating on electrical characteristics of conjugated polymer-based thin-film transistors (TFTs). As the blade-coating speed increased, the thickness of the polymer thin-film was naturally increased while the surface roughness was found to be unchanged. Polymer TFTs show two remarkable tendencies on the magnitude of field-effect mobility with increasing blade-coating speed. As the blade-coating speed increased up to 2 mm/s, the fieldeffect mobility increased to 4.72 cm2V−1s−1. However, when the coating speed reached 6 mm/s beyond 2 mm/s, the field-effect mobility rather decreased to 3.18 cm2V−1s−1. The threshold voltage was positively shifted from 2.09 to 8.29 V with respect to increase in blade-coating speed.

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