scholarly journals Application-Oriented Growth of a Molybdenum Disulfide (MoS2) Single Layer by Means of Parametrically Optimized Chemical Vapor Deposition

Materials ◽  
2020 ◽  
Vol 13 (12) ◽  
pp. 2786
Author(s):  
Pinakapani Tummala ◽  
Alessio Lamperti ◽  
Mario Alia ◽  
Erika Kozma ◽  
Luca Giampaolo Nobili ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Molybdenum Disulfide ◽  
Vapor Deposition ◽  
Large Scale ◽  
Molybdenum Trioxide ◽  
Chemical Vapor ◽  
Transition Metal Dichalcogenide ◽  
Large Area ◽  
Oriented Growth ◽  
Growth Pressure

In the 2D material framework, molybdenum disulfide (MoS2) was originally studied as an archetypical transition metal dichalcogenide (TMD) material. The controlled synthesis of large-area and high-crystalline MoS2 remains a challenge for distinct practical applications from electronics to electrocatalysis. Among the proposed methods, chemical vapor deposition (CVD) is a promising way for synthesizing high-quality MoS2 from isolated domains to a continuous film because of its high flexibility. Herein, we report on a systematic study of the effects of growth pressure, temperature, time, and vertical height between the molybdenum trioxide (MoO3) source and the substrate during the CVD process that influence the morphology, domain size, and uniformity of thickness with controlled parameters over a large scale. The substrate was pretreated with perylene-3,4,9,10-tetracarboxylic acid tetrapotassium salt (PTAS) seed molecule that promoted the layer growth of MoS2. Further, we characterized the as-grown MoS2 morphologies, layer quality, and physical properties by employing scanning electron microscopy (SEM), Raman spectroscopy, and photoluminescence (PL). Our experimental findings demonstrate the effectiveness and versatility of the CVD approach to synthesize MoS2 for various target applications.

Catalytic chemical vapor deposition of large-area uniform two-dimensional molybdenum disulfide using sodium chloride

2017 ◽  
Vol 28 (46) ◽  
pp. 465103 ◽  
Author(s):  
Jeong-Gyu Song ◽  
Gyeong Hee Ryu ◽  
Youngjun Kim ◽  
Whang Je Woo ◽  
Kyung Yong Ko ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Sodium Chloride ◽  
Molybdenum Disulfide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Two Dimensional ◽  
Large Area ◽  
Catalytic Chemical Vapor Deposition

A Reactive Molecular Dynamics Study of Atomistic Mechanisms During Synthesis of MoS2 Layers by Chemical Vapor Deposition

MRS Advances ◽  
2018 ◽  
Vol 3 (6-7) ◽  
pp. 307-311
Author(s):  
Sungwook Hong ◽  
Aravind Krishnamoorthy ◽  
Chunyang Sheng ◽  
Rajiv K. Kalia ◽  
Aiichiro Nakano ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Experimental Studies ◽  
Chemical Vapor ◽  
Reaction Pathways ◽  
Transition Metal Dichalcogenide ◽  
Large Area ◽  
Reactive Molecular Dynamics ◽  
Cvd Synthesis

ABSTRACTTransition metal dichalcogenide (TMDC) monolayers like MoS2 are promising materials for future electronic applications. Large-area monolayer MoS2 samples for these applications are typically synthesized by chemical vapor deposition (CVD) using MoO3 reactants and gas-phase sulfur precursors. Recent experimental studies have greatly improved our understanding of reaction pathways in the CVD growth process. However, atomic mechanisms of sulfidation process remain to be fully elucidated. In this work, we present quantum-mechanically informed and validated reactive molecular dynamics (RMD) simulations for CVD synthesis of MoS2 layers using S2 precursors. Our RMD simulations clarify atomic-level reaction pathways for the sulfidation of MoO3 surfaces by S2, which is a critical reaction step for CVD synthesis of MoS2 layers. These results provide a better understanding of the sulfidation process for the scalable synthesis of defect-free MoS2 and other TMDC materials.

scholarly journals Control of the Nucleation Density of Molybdenum Disulfide in Large-Scale Synthesis Using Chemical Vapor Deposition

Materials ◽  
2018 ◽  
Vol 11 (6) ◽  
pp. 870 ◽  
Author(s):  
Haitao Xu ◽  
Weipeng Zhou ◽  
Xiaowu Zheng ◽  
Jiayao Huang ◽  
Xiliang Feng ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Molybdenum Disulfide ◽  
Vapor Deposition ◽  
Large Scale ◽  
Chemical Vapor ◽  
Nucleation Density ◽  
Large Scale Synthesis

Direct growth of molybdenum disulfide on arbitrary insulating surfaces by chemical vapor deposition

RSC Advances ◽  
2015 ◽  
Vol 5 (6) ◽  
pp. 4364-4367 ◽  
Author(s):  
Jiao Wang ◽  
Linfeng Chen ◽  
Wenjing Lu ◽  
Mengqi Zeng ◽  
Lifang Tan ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Molybdenum Disulfide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Large Area ◽  
Insulating Surfaces ◽  
Direct Growth ◽  
Insulating Substrates

Direct growth of large area, uniform and patternable few-layer molybdenum disulfide is achieved on arbitrary insulating substrates by CVD.

scholarly journals Controlled Epitaxial Growth and Atomically Sharp Interface of Graphene/Ferromagnetic Heterostructure via Ambient Pressure Chemical Vapor Deposition

Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 3112
Author(s):  
Ruinan Wu ◽  
Yueguo Hu ◽  
Peisen Li ◽  
Junping Peng ◽  
Jiafei Hu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Ambient Pressure ◽  
Chemical Vapor ◽  
Sharp Interface ◽  
Large Area ◽  
Oriented Growth ◽  
High Quality ◽  
Pressure Chemical

The strong spin filtering effect can be produced by C-Ni atomic orbital hybridization in lattice-matched graphene/Ni (111) heterostructures, which provides an ideal platform to improve the tunnel magnetoresistance (TMR) of magnetic tunnel junctions (MTJs). However, large-area, high-quality graphene/ferromagnetic epitaxial interfaces are mainly limited by the single-crystal size of the Ni (111) substrate and well-oriented graphene domains. In this work, based on the preparation of a 2-inch single-crystal Ni (111) film on an Al2O3 (0001) wafer, we successfully achieve the production of a full-coverage, high-quality graphene monolayer on a Ni (111) substrate with an atomically sharp interface via ambient pressure chemical vapor deposition (APCVD). The high crystallinity and strong coupling of the well-oriented epitaxial graphene/Ni (111) interface are systematically investigated and carefully demonstrated. Through the analysis of the growth model, it is shown that the oriented growth induced by the Ni (111) crystal, the optimized graphene nucleation and the subsurface carbon density jointly contribute to the resulting high-quality graphene/Ni (111) heterostructure. Our work provides a convenient approach for the controllable fabrication of a large-area homogeneous graphene/ferromagnetic interface, which would benefit interface engineering of graphene-based MTJs and future chip-level 2D spintronic applications.

scholarly journals SYNTHETIC GRAPHENE GROWN BY CHEMICAL VAPOR DEPOSITION ON COPPER FOILS

2013 ◽  
Vol 27 (10) ◽  
pp. 1341002 ◽  
Author(s):  
TING FUNG CHUNG ◽  
TIAN SHEN ◽  
HELIN CAO ◽  
LUIS A. JAUREGUI ◽  
WEI WU ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Large Scale ◽  
Rapid Development ◽  
Graphene Film ◽  
Single Layer ◽  
Chemical Vapor ◽  
Mechanical And Thermal Properties ◽  
Large Area ◽  
Exfoliated Graphene

The discovery of graphene, a single layer of covalently bonded carbon atoms, has attracted intense interest. Initial studies using mechanically exfoliated graphene unveiled its remarkable electronic, mechanical and thermal properties. There has been a growing need and rapid development in large-area deposition of graphene film and its applications. Chemical vapor deposition on copper has emerged as one of the most promising methods in obtaining large-scale graphene films with quality comparable to exfoliated graphene. In this paper, we review the synthesis and characterizations of graphene grown on copper foil substrates by atmospheric pressure chemical vapor deposition. We also discuss potential applications of such large-scale synthetic graphene.

Synthesis of Large-Area Monolayer and Few-Layer MoSe2 Continuous Films by Chemical Vapor Deposition without Hydrogen assisted and Formation Mechanism

Nanoscale ◽  
2021 ◽  
Author(s):  
Hui Yan ◽  
Tong Yu ◽  
Heng Li ◽  
Zhuocheng Li ◽  
Haitao Tang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Layered Structure ◽  
Vapor Deposition ◽  
Large Scale ◽  
Chemical Vapor ◽  
Controlled Synthesis ◽  
Two Dimensional ◽  
Large Area ◽  
High Quality

Two dimensional (2D) MoSe2 with layered structure has attracted extensive research due to its excellent electronic and optical properties. Controlled synthesis of large-scale and high-quality MoSe2 is highly desirable but...

scholarly journals Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Zhenzhen Tian ◽  
Xiaoming Yuan ◽  
Ziran Zhang ◽  
Wuao Jia ◽  
Jian Zhou ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Driving Force ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Nanowire Growth ◽  
Calphad Approach ◽  
Deposition Method ◽  
Large Area ◽  
Growth Phenomenon

AbstractGrowth of high-quality III–V nanowires at a low cost for optoelectronic and electronic applications is a long-term pursuit of research. Still, controlled synthesis of III–V nanowires using chemical vapor deposition method is challenge and lack theory guidance. Here, we show the growth of InP and GaP nanowires in a large area with a high density using a vacuum chemical vapor deposition method. It is revealed that high growth temperature is required to avoid oxide formation and increase the crystal purity of InP nanowires. Introduction of a small amount of Ga into the reactor leads to the formation of GaP nanowires instead of ternary InGaP nanowires. Thermodynamic calculation within the calculation of phase diagrams (CALPHAD) approach is applied to explain this novel growth phenomenon. Composition and driving force calculations of the solidification process demonstrate that only 1 at.% of Ga in the catalyst is enough to tune the nanowire formation from InP to GaP, since GaP nucleation shows a much larger driving force. The combined thermodynamic studies together with III–V nanowire growth studies provide an excellent example to guide the nanowire growth.

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