Direct growth of molybdenum disulfide on arbitrary insulating surfaces by chemical vapor deposition

RSC Advances ◽  
2015 ◽  
Vol 5 (6) ◽  
pp. 4364-4367 ◽  
Author(s):  
Jiao Wang ◽  
Linfeng Chen ◽  
Wenjing Lu ◽  
Mengqi Zeng ◽  
Lifang Tan ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Molybdenum Disulfide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Large Area ◽  
Insulating Surfaces ◽  
Direct Growth ◽  
Insulating Substrates

Direct growth of large area, uniform and patternable few-layer molybdenum disulfide is achieved on arbitrary insulating substrates by CVD.

Catalytic chemical vapor deposition of large-area uniform two-dimensional molybdenum disulfide using sodium chloride

2017 ◽  
Vol 28 (46) ◽  
pp. 465103 ◽  
Author(s):  
Jeong-Gyu Song ◽  
Gyeong Hee Ryu ◽  
Youngjun Kim ◽  
Whang Je Woo ◽  
Kyung Yong Ko ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Sodium Chloride ◽  
Molybdenum Disulfide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Two Dimensional ◽  
Large Area ◽  
Catalytic Chemical Vapor Deposition

scholarly journals Application-Oriented Growth of a Molybdenum Disulfide (MoS2) Single Layer by Means of Parametrically Optimized Chemical Vapor Deposition

Materials ◽  
2020 ◽  
Vol 13 (12) ◽  
pp. 2786
Author(s):  
Pinakapani Tummala ◽  
Alessio Lamperti ◽  
Mario Alia ◽  
Erika Kozma ◽  
Luca Giampaolo Nobili ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Molybdenum Disulfide ◽  
Vapor Deposition ◽  
Large Scale ◽  
Molybdenum Trioxide ◽  
Chemical Vapor ◽  
Transition Metal Dichalcogenide ◽  
Large Area ◽  
Oriented Growth ◽  
Growth Pressure

In the 2D material framework, molybdenum disulfide (MoS2) was originally studied as an archetypical transition metal dichalcogenide (TMD) material. The controlled synthesis of large-area and high-crystalline MoS2 remains a challenge for distinct practical applications from electronics to electrocatalysis. Among the proposed methods, chemical vapor deposition (CVD) is a promising way for synthesizing high-quality MoS2 from isolated domains to a continuous film because of its high flexibility. Herein, we report on a systematic study of the effects of growth pressure, temperature, time, and vertical height between the molybdenum trioxide (MoO3) source and the substrate during the CVD process that influence the morphology, domain size, and uniformity of thickness with controlled parameters over a large scale. The substrate was pretreated with perylene-3,4,9,10-tetracarboxylic acid tetrapotassium salt (PTAS) seed molecule that promoted the layer growth of MoS2. Further, we characterized the as-grown MoS2 morphologies, layer quality, and physical properties by employing scanning electron microscopy (SEM), Raman spectroscopy, and photoluminescence (PL). Our experimental findings demonstrate the effectiveness and versatility of the CVD approach to synthesize MoS2 for various target applications.

scholarly journals Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Zhenzhen Tian ◽  
Xiaoming Yuan ◽  
Ziran Zhang ◽  
Wuao Jia ◽  
Jian Zhou ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Driving Force ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Nanowire Growth ◽  
Calphad Approach ◽  
Deposition Method ◽  
Large Area ◽  
Growth Phenomenon

AbstractGrowth of high-quality III–V nanowires at a low cost for optoelectronic and electronic applications is a long-term pursuit of research. Still, controlled synthesis of III–V nanowires using chemical vapor deposition method is challenge and lack theory guidance. Here, we show the growth of InP and GaP nanowires in a large area with a high density using a vacuum chemical vapor deposition method. It is revealed that high growth temperature is required to avoid oxide formation and increase the crystal purity of InP nanowires. Introduction of a small amount of Ga into the reactor leads to the formation of GaP nanowires instead of ternary InGaP nanowires. Thermodynamic calculation within the calculation of phase diagrams (CALPHAD) approach is applied to explain this novel growth phenomenon. Composition and driving force calculations of the solidification process demonstrate that only 1 at.% of Ga in the catalyst is enough to tune the nanowire formation from InP to GaP, since GaP nucleation shows a much larger driving force. The combined thermodynamic studies together with III–V nanowire growth studies provide an excellent example to guide the nanowire growth.

scholarly journals Practical Route for the Low-Temperature Growth of Large-Area Bilayer Graphene on Polycrystalline Nickel by Cold-Wall Chemical Vapor Deposition

ACS Omega ◽  
2021 ◽  
Author(s):  
Muhammad Aniq Shazni Mohammad Haniff ◽  
Nur Hamizah Zainal Ariffin ◽  
Poh Choon Ooi ◽  
Mohd Farhanulhakim Mohd Razip Wee ◽  
Mohd Ambri Mohamed ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Bilayer Graphene ◽  
Cold Wall ◽  
Polycrystalline Nickel ◽  
Large Area ◽  
Temperature Growth ◽  
Low Temperature Growth

CMOS-Compatible Synthesis of Large-Area, High-Mobility Graphene by Chemical Vapor Deposition of Acetylene on Cobalt Thin Films

ACS Nano ◽  
2011 ◽  
Vol 5 (9) ◽  
pp. 7198-7204 ◽  
Author(s):  
Michael E. Ramón ◽  
Aparna Gupta ◽  
Chris Corbet ◽  
Domingo A. Ferrer ◽  
Hema C. P. Movva ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Mobility ◽  
Chemical Vapor ◽  
Large Area ◽  
Cobalt Thin Films ◽  
Cmos Compatible
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