scholarly journals Influences of Low Intensity on Diode Parameters of CdTe Solar Cells

Materials ◽  
2020 ◽  
Vol 13 (9) ◽  
pp. 2194
Author(s):  
Xiaobo Xu ◽  
Wenping Gu ◽  
Xiaoyan Wang ◽  
Wei Zhu ◽  
Lin Zhang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Series Resistance ◽  
Short Circuit ◽  
Illumination Intensity ◽  
Saturation Current ◽  
Shunt Resistance ◽  
Cdte Solar Cells ◽  
Parameter Variations ◽  
Small Intensity ◽  
Saturation Current Density

This study deals with the CdS/CdTe solar cells under low illumination intensity, with cell #1 for the shunt resistance exceeding 100,000 Ω·cm2 and cell #2 for the shunt resistance above 1000 Ω·cm2. The diode parameter variations with the decline of the irradiance intensity are illustrated by dividing 0–100 mW/cm−2 into a number of small intensity ranges for J–V measurements and assuming the diode parameters to be constant within each range, the diode parameters of each range including the series resistance, the shunt resistance, the reverse saturation current density and the ideality factor are then extracted by employing an analytical approach. The mechanism of the cell performance deviations are also investigated by basic theories, reports and experiments. For cell #1 with higher Rsh corresponding to less traps, Rsh shows a upward tendency as the irradiance declines, n and J0 exhibit a rise with the irradiance and keep nearly unchanged at the low irradiance values mainly due to recombination and carrier contributions, Rs shows a slight increase when the irradiance intensity goes down because of the resistance of CdTe absorption layer. For cell #2 with lower Rsh corresponding to more traps, with the decrease of the illumination intensity, Rsh increases sharply only for captured carrier reduction, Rs goes steadily up similarly, n and J0 exhibit a decline with the irradiance due to recombination shift. It should be pointed out that Rs varies much smoother than the traditional approximation of a reciprocal of differential at short circuit, and the distribution of Rsh is diverse, and an average Rsh of for each intensity range can reflect the variation trend.

scholarly journals Behaviour of PV cell with variation in parameters

2018 ◽  
Vol 3 (1) ◽  
pp. 11-13
Author(s):  
P. V. Ram Kumar ◽  
◽  
Aman Khurana ◽  
R. S. Mishra
Keyword(s):  
Open Circuit Voltage ◽  
Series Resistance ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Temperature Series ◽  
Saturation Current ◽  
Electrical Behavior ◽  
Uniform Illumination ◽  
Shunt Resistance

First electrical behavior i.e. short circuit current and open-circuit voltage is observed. The effect of different parameters on the I-V and P-V curve is studied considering uniform illumination. These parameters are insolation level, temperature, series resistance, shunt resistance, diode reverse saturation current. A variation on I-V and P-V curves are different with each parameter. With some parameters, the effect is significant while for others the effect is not so significant. For the parameters whose effect is not so significant large variation of inputs is taken for showing the effect. Simulation work is done in MATLAB

Specifies of tandem organic solar cells using optical spacers with recombination model

2015 ◽  
Vol 12 (1) ◽  
pp. 77-82 ◽  
Author(s):  
M.R. Merad Boudia ◽  
A Cheknane ◽  
B Benyoucef
Keyword(s):  
Solar Cells ◽  
Organic Solar Cells ◽  
Ideality Factor ◽  
Fill Factor ◽  
Series Resistance ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Shunt Resistance ◽  
Lumped Circuit Model

A numerical simulation study of a Tandem solar cell is presented. The parameters of single and two-diodes lumped-circuit model are usually the saturation current, the series resistance, the ideality factor, the shunt resistance and the photocurrent. It is found that the influence of the distributed series resistance on electrical characteristics can be described numerically by the application of the two models to Tandem organic solar cells. A description of the efficiency, fill factor, open circuit voltage and short circuit current on the devices are marked with series resistance, temperature and ideality factor. This approach allows one to obtain a set of parameters which is reasonable and representative of the physical system.

scholarly journals RESISTANCE, TEMPERATURE AND IRRADIANCE PARAMETER ANALYSIS OF A SINGLE DIODE PHOTOVOLTAIC CELL MODEL

2019 ◽  
pp. 97-107
Keyword(s):  
Output Power ◽  
Series Resistance ◽  
Cell Model ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Photovoltaic Cell ◽  
Open Circuit ◽  
Parameter Analysis ◽  
Shunt Resistance ◽  
Parameter Variations

This paper presents an analysis of parameter variations of a single-diode solar cell model. The parameters analyzed are the series resistance, shunt resistance, temperature and radiation change. Model equations are derived and simulated. All simulations were performed in MatLab using looping iterative method. Results obtained show that an increase in series resistance causes a decrease in short-circuit current and output power. A decrease in shunt resistance also causes a decrease in short circuit current and output power. An increase in temperature above the nominal value of 25oC causes a significant decrease in the open circuit voltage. An increase in irradiance above a nominal value of 1000 W/m2 causes the short circuit current to increase from 8.21A at 1000 W/m2 to 10.67A at 1300W/m2. It can be seen that parameter variations have a net effect on the current-voltage (I-V) and power-voltage (P – V) characteristics.

scholarly journals A new simplified method for efficient extraction of solar cells and modules parameters from datasheet information

2021 ◽  
Author(s):  
Fahmi F. Muhammadsharif
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Series Resistance ◽  
Peak Position ◽  
Saturation Current ◽  
Simulation Design ◽  
Shunt Resistance ◽  
Simplified Method ◽  
Efficient Extraction ◽  
Si Thin Film

Abstract An accurate and straightforward estimation of solar cells and modules parameters from the manufacturer’s datasheet is essential for the performance assessment, simulation, design, and quality control. In this work, a simple and efficient technique is reported to extract the parameters of solar cells and modules, namely ideality factor (n), series resistance (Rs), shunt resistance (Rsh), photocurrent (Iph) and saturation current (Io), from datasheet information. The method is based on defining the peak position of the function \(f\left(n,{R}_{sh}\right)=n\left({R}_{sh\_max}-{R}_{sh}\right)\), at which the five parameters are extracted. It was validated on four different technologies of solar cells and modules, including Poly-Si, Mono-Si, thin film and multijunction. Results showed that a simple and efficient extraction of the parameters can be realized by using this technique compared to that of the reported methods in literature.

scholarly journals Numerical Investigation of Graphene as a Back Surface Field Layer on the Performance of Cadmium Telluride Solar Cell

Molecules ◽  
2021 ◽  
Vol 26 (11) ◽  
pp. 3275
Author(s):  
Devendra KC ◽  
Deb Kumar Shah ◽  
M. Shaheer Akhtar ◽  
Mira Park ◽  
Chong Yeal Kim ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Doping Concentration ◽  
Carrier Lifetime ◽  
Short Circuit ◽  
Back Surface ◽  
Back Surface Field ◽  
Cdte Solar Cell ◽  
Cdte Solar Cells ◽  
Surface Field

This paper numerically explores the possibility of ultrathin layering and high efficiency of graphene as a back surface field (BSF) based on a CdTe solar cell by Personal computer one-dimensional (PC1D) simulation. CdTe solar cells have been characterized and studied by varying the carrier lifetime, doping concentration, thickness, and bandgap of the graphene layer. With simulation results, the highest short-circuit current (Isc = 2.09 A), power conversion efficiency (h = 15%), and quantum efficiency (QE ~ 85%) were achieved at a carrier lifetime of 1 × 103 ms and a doping concentration of 1 × 1017 cm−3 of graphene as a BSF layer-based CdTe solar cell. The thickness of the graphene BSF layer (1 mm) was proven the ultrathin, optimal, and obtainable for the fabrication of high-performance CdTe solar cells, confirming the suitability of graphene material as a BSF. This simulation confirmed that a CdTe solar cell with the proposed graphene as the BSF layer might be highly efficient with optimized parameters for fabrication.

Determination of Series Resistance in CdSeTe/CdTe Solar Cells by the Jsc–Voc Method

2020 ◽  
Author(s):  
Carey Reich ◽  
Arthur Onno ◽  
Alexandra Bothwell ◽  
Anna Kindvall ◽  
Zachary Holman ◽  
...  
Keyword(s):  
Solar Cells ◽  
Series Resistance ◽  
Cdte Solar Cells

scholarly journals Optical Losses of Frontal Layers in Superstrate CdS/CdTe Solar Cells Using OPAL2

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 943
Author(s):  
Nowshad Amin ◽  
Mohammad Rezaul Karim ◽  
Zeid Abdullah ALOthman
Keyword(s):  
Solar Cells ◽  
Short Circuit ◽  
Contact Potential Difference ◽  
Short Circuit Current ◽  
Optical Losses ◽  
Contact Potential ◽  
Conducting Oxides ◽  
Cdte Solar Cells ◽  
First Time ◽  
Defect Densities

In this paper, optical losses in CdS/CdTe solar cells are calculated on the basis of the designated reflective index of various frontal layers using an OPAL2 calculator for the first time. Two types of glass (0.1 mm ultra-thin Schott and 1.1 mm standard borosilicate glass) were assumed to be coated by different Transparent-Conducting-Oxides (TCOs) such as SnO2:F, ZnO:Al, and ITO forming frontal layers for CdS/CdTe solar cells in superstrate configuration. Absorption, reflectance, transmittance, and consequently optical bandgap energies are calculated as a function of common thicknesses, used in the literature. The results show that an increase in TCO thickness led to a decrease in optical band gap as well as an enhancement in contact potential difference, which can deteriorate device performance. The optimum thickness of 100 nm for SnO2:F was calculated, while 200 nm for ZnO:Al and ITO show reasonable optical losses caused by reflections at the interfaces’ and the layer’s absorption. It is seen that 80 to 150 nm CdS on ITO might be an effective range to satisfy a high short circuit current and low defect densities at the CdS/CdTe interface. Finally, a minimum 2 μm thickness for the CdTe on the ultra-thin Schott glass coated by optimum layers can result in the highest short circuit current of 28.69 mA/cm2. This work offers a practical equivalent strategy to be applied for any superstrate solar cells containing TCO and CdS frontal layers.

Efficiency Enhancement in Organic Solar Cells by Use of Cobalt Phthalocyanine (CoPc) Thin Films

2020 ◽  
Vol 20 (6) ◽  
pp. 3703-3709 ◽  
Author(s):  
S. S. Rawat ◽  
Ashish Kumar ◽  
R. Srivastava ◽  
C. K. Suman
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Energy Level ◽  
Buffer Layer ◽  
Organic Solar Cells ◽  
Fill Factor ◽  
Series Resistance ◽  
Short Circuit ◽  
Acid Methyl Ester ◽  
Cobalt Phthalocyanine

Cobalt phthalocyanine (CoPc) nano thin films have been introduced as a hole buffer layer in organic solar cells with active layer of Poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). The surface morphology and opto-electrical properties of the CoPc thin films have made it an applicable materials for organic solar cells. The nano-thin films of CoPc are continuously distributed over the studied area and the roughness are around 5 to 7 nm for all thickness. The dominant optical absorptions are in the visible range of wavelengths 500 to 800 nm. The CoPc buffer layer is suitable for energy level matching in energy level diagram and enhances the absorption spectrum as well, which facilitate the charge carrier generation, increases charge transport, decreases charge recombination, hence enhance the all device parameters short circuit current density (Jsc), open circuit voltage (Voc) and fill factor (FF). The solar cells efficiency increases by ˜70% and the fill factor increases by ˜45% in comparison to the standard cells. The increase in efficiency and the fill factors of the solar cells may also be attributed to the increasing of shunt and lowering the series resistance of the cells. The cole–cole plots of the devices may be modeled in electrical circuit as a single parallel resistance Rb and capacitance Cb network with a series resistance Rc.

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