scholarly journals Preparation of Cu3N/MoS2 Heterojunction through Magnetron Sputtering and Investigation of Its Structure and Optical Performance

Materials ◽  
2020 ◽  
Vol 13 (8) ◽  
pp. 1873
Author(s):  
Liwen Zhu ◽  
Xiu Cao ◽  
Chenyang Gong ◽  
Aihua Jiang ◽  
Yong Cheng ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Band Gap ◽  
Transmission Spectrum ◽  
Charge Separation ◽  
Potential Application ◽  
High Performance ◽  
Optical Band Gap ◽  
Type Ii ◽  
Optical Performance ◽  
Heterojunction Structure

Cu3N/MoS2 heterojunction was prepared through magnetron sputtering, and its optical band gap was investigated. Results showed that the prepared Cu3N/MoS2 heterojunction had a clear surface heterojunction structure, uniform surface grains, and no evident cracks. The optical band gap (1.98 eV) of Cu3N/MoS2 heterojunction was obtained by analyzing the ultraviolet-visible transmission spectrum. The valence and conduction band offsets of Cu3N/MoS2 heterojunction were 1.42 and 0.82 eV, respectively. The Cu3N film and multilayer MoS2 formed a type-II heterojunction. After the two materials adhered to form the heterojunction, the interface electrons flowed from MoS2 to Cu3N because the latter had higher Fermi level than the former. This behavior caused the formation of additional electrons in the Cu3N and MoS2 layers and the change in optical band gap, which was conducive to the charge separation of electrons in MoS2 or MoS2 holes. The prepared Cu3N/MoS2 heterojunction has potential application in various high-performance photoelectric devices, such as photocatalysts and photodetectors.

Optical band gap of zinc nitride films prepared by reactive rf magnetron sputtering

2006 ◽  
Vol 41 (9) ◽  
pp. 889-892 ◽  
Author(s):  
Wei Du ◽  
Fujian Zong ◽  
Honglei Ma ◽  
Jin Ma ◽  
Min Zhang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Band Gap ◽  
Optical Band Gap ◽  
Rf Magnetron Sputtering ◽  
Zinc Nitride ◽  
Reactive Rf Magnetron Sputtering

Optimization of RF Magnetron Sputtering Process Parameters Based on Genetic Algorithm and Neural Network

2015 ◽  
Vol 1109 ◽  
pp. 481-485
Author(s):  
Norlina Mohd Sabri ◽  
Nor Diyana Md Sin ◽  
Mazidah Puteh ◽  
Mohamad Rusop
Keyword(s):  
Neural Network ◽  
Genetic Algorithm ◽  
Magnetron Sputtering ◽  
Band Gap ◽  
Optical Band Gap ◽  
Optimal Parameter ◽  
Rf Magnetron Sputtering ◽  
Process Parameter ◽  
Thin Film Fabrication ◽  
Parameter Combination

A procedure for RF magnetron sputtering process parameter optimization is proposed in this paper. This study has been focusing on determining the optimal parameter combination for producing the desirable optical band gap. In this proposed procedure, Genetic Algorithm (GA) has been adapted as the optimization tool, while Artificial Neural Network (ANN) has been implemented as the prediction model. GA was adapted to search for the optimal parameter combination from the set of parameters, while later the ANN modeling had been utilized to predict the optical band gap energies for each of the parameter combinations. The result from the GA optimization is expected to produce the highest band gap value. The computational results from the proposed procedure were then compared with the actual laboratory experimental results from the ZnO thin film fabrication. Based on the comparison result, the performance of the proposed procedure had proven to be promising in determining the most optimized process parameter combination from the set of parameters.

scholarly journals High-efficiency photovoltaic cells with wide optical band gap polymers based on fluorinated phenylene-alkoxybenzothiadiazole

2017 ◽  
Vol 10 (6) ◽  
pp. 1443-1455 ◽  
Author(s):  
Seo-Jin Ko ◽  
Quoc Viet Hoang ◽  
Chang Eun Song ◽  
Mohammad Afsar Uddin ◽  
Eunhee Lim ◽  
...  
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
High Performance ◽  
Optical Band Gap ◽  
High Efficiency ◽  
Bulk Heterojunction ◽  
Polymer Solar Cells ◽  
Photovoltaic Cells ◽  
Wide Band ◽  
Wide Band Gap

A new series of wide band gap photovoltaic polymers based on a fluorinated phenylene-alkoxybenzothiadiazole unit with an optical band gap of over 1.90 eV are designed and utilized for high-performance single- and multi-junction bulk heterojunction polymer solar cells.

scholarly journals Effect of Deposition Pressure on the Microstructure and Optical Band Gap of Molybdenum Disulfide Films Prepared by Magnetron Sputtering

Coatings ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 570 ◽  
Author(s):  
Gong ◽  
Xiao ◽  
Zhu ◽  
Wang ◽  
Ma
Keyword(s):  
Crystal Structure ◽  
Grain Size ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Band Gap ◽  
Optical Band Gap ◽  
Exciton Energy ◽  
Deposition Pressure ◽  
Electronegativity Difference ◽  
Structure Surface

MoS2 films were prepared via magnetron sputtering under different deposition pressures, and the effects of deposition pressure on the crystal structure, surface morphology, and optical properties of the resulting films were investigated. The results show that the crystallinity of the films first increases and then decreases with increasing pressure. The surface of the films prepared by magnetron sputtering is dense and uniform with few defects. The deposition pressure affects the grain size, surface morphology, and optical band gap of the films. The films deposited at a deposition pressure of 1 Pa revealed remarkable crystallinity, a 30.35 nm grain size, and a 1.67 eV optical band gap. Given the large electronegativity difference between MoS2 molecules and weak van der Waals forces between layers, the MoS2 films are prone to defects at different deposition pressures, causing the exciton energy near defects to decrease and the modulation of the surrounding band.

scholarly journals Effect of Ge Addition on the Optical Band Gap and Refractive Index of Thermally Evaporated Thin Films

2008 ◽  
Vol 2008 ◽  
pp. 1-4 ◽  
Author(s):  
Pankaj Sharma ◽  
S. C. Katyal
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Band Gap ◽  
Density Of States ◽  
Spectral Range ◽  
Transmission Spectrum ◽  
Optical Band Gap ◽  
Thermal Evaporation ◽  
Thermal Evaporation Technique ◽  
Evaporation Technique

The present paper reports the effect of Ge addition on the optical band gap and refractive index of thin films. Thin films of and were prepared by thermal evaporation technique at base pressure  Pa. Optical band gap and refractive index were calculated by analyzing the transmission spectrum in the spectral range 400–1500 nm. The optical band gap decreases while the refractive index increases with the addition of Ge to . The decrease of optical band gap has been explained on the basis of density of states; and the increase in refractive index has been explained on the basis increase in disorder in the system.

Theoretical study on mesoscopic-size impurity effects in the charge separation process of organic photocells

2018 ◽  
Vol 20 (21) ◽  
pp. 14846-14854
Author(s):  
Tomomi Shimazaki ◽  
Motomichi Tashiro ◽  
Takahito Nakajima
Keyword(s):  
Charge Separation ◽  
High Performance ◽  
Theoretical Study ◽  
Bulk Heterojunction ◽  
Separation Process ◽  
Impurity Effects ◽  
Heterojunction Structure ◽  
Donor And Acceptor

A bulk-heterojunction structure is often employed to develop high-performance organic photocells, in which the donor and acceptor regions are complexly intertwined.

Transparent Conductive In-doped Cd3TeO6 Thin Films with Perovskite Structure Deposited by Radio Frequency Magnetron Sputtering

2005 ◽  
Vol 20 (9) ◽  
pp. 2256-2260 ◽  
Author(s):  
Hiroyuki Tetsuka ◽  
Yue Jin Shan ◽  
Keitaro Tezuka ◽  
Hideo Imoto ◽  
Kiyotaka Wasa
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Band Gap ◽  
Indium Tin Oxide ◽  
Optical Band Gap ◽  
Visible Region ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Average Transmittance

Transparent conductive In-doped Cd3TeO6 thin films were deposited on silica glass substrate by radio frequency magnetron sputtering using targets composed of CdO, TeO2, and In2O3 powders, and their electrical and optical properties were examined. The electrical resistivity of 3.2 × 10−3 Ωcm and an average transmittance above 80% in the visible region (400–800 nm) were obtained for the films deposited at the substrate temperature above 300 °C. The maximum optical band gap was 3.92 eV for the film deposited at 700 °C, demonstrating a large optical band gap comparable to indium tin oxide.

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