scholarly journals Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis

Materials ◽  
2020 ◽  
Vol 13 (8) ◽  
pp. 1837 ◽  
Author(s):  
Viviana Scuderi ◽  
Cristiano Calabretta ◽  
Ruggero Anzalone ◽  
Marco Mauceri ◽  
Francesco La Via
Keyword(s):  
Cross Section ◽  
Room Temperature ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Stacking Faults ◽  
Theoretical Models ◽  
Free Standing ◽  
Raman Analysis ◽  
Silicon Interface

We report a comprehensive investigation on stacking faults (SFs) in the 3C-SiC cross-section epilayer. 3C-SiC growth was performed in a horizontal hot-wall chemical vapour deposition (CVD) reactor. After the growth (85 microns thick), the silicon substrate was completely melted inside the CVD chamber, obtaining free-standing 4 inch wafers. A structural characterization and distribution of SFs was performed by μ-Raman spectroscopy and room-temperature μ-photoluminescence. Two kinds of SFs, 4H-like and 6H-like, were identified near the removed silicon interface. Each kind of SFs shows a characteristic photoluminescence emission of the 4H-SiC and 6H-SiC located at 393 and 425 nm, respectively. 4H-like and 6H-like SFs show different distribution along film thickness. The reported results were discussed in relation with the experimental data and theoretical models present in the literature.

Electron microscope characterization of MOCVD-grown gap layers on Si

1986 ◽  
Vol 44 ◽  
pp. 724-725
Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson
Keyword(s):  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Lattice Match ◽  
Si Substrates ◽  
Metal Organic ◽  
Good Lattice ◽  
Antiphase Domains

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).

Synthesis and material characterization of amorphous and crystalline (α-) Al2O3via aerosol assisted chemical vapour deposition

RSC Advances ◽  
2016 ◽  
Vol 6 (105) ◽  
pp. 102956-102960 ◽  
Author(s):  
Sapna D. Ponja ◽  
Ivan P. Parkin ◽  
Claire J. Carmalt
Keyword(s):  
Chemical Vapour Deposition ◽  
Material Characterization ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Facile Synthesis ◽  
Quartz Substrates

The facile synthesis of Al2O3 in the amorphous and corundum phase on glass and quartz substrates, respectively, is reported.

scholarly journals Synthesis and Magnetic Characterization of Graphite-Coated Iron Nanoparticles

2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
A. M. Espinoza-Rivas ◽  
M. A. Pérez-Guzmán ◽  
R. Ortega-Amaya ◽  
J. Santoyo-Salazar ◽  
C. D. Gutiérrez-Lazos ◽  
...  
Keyword(s):  
Magnetite Nanoparticles ◽  
Iron Nanoparticles ◽  
Vapour Deposition ◽  
Magnetic Measurements ◽  
Chemical Vapour ◽  
Hydrogen Atmosphere ◽  
Iron Core ◽  
Carbon Excess ◽  
Raman Characterization

Graphite-coated iron nanoparticles were prepared from magnetite nanoparticles by chemical vapour deposition (CVD) under methane and hydrogen atmosphere. After being purified from carbon excess, graphite-coated iron nanoparticles were tested for morphological and magnetic properties. It was found that, during the thermal process, magnetite nanoparticles 6 nm in size coalesce and transform into graphite-coated iron 200 nm in size, as revealed by scanning electron microscopy (SEM). Raman characterization assessed that high-quality graphite coats the iron core. Magnetic measurements revealed the phase change (magnetite to iron) as an increase in the saturation magnetization from 50 to 165 emu/g after the CVD process.

Structural and optical characterization of hybrid ZnO/polymer core-shell nanowires fabricated by oxidative chemical vapour deposition

2015 ◽  
Vol 13 (7-9) ◽  
pp. 614-617 ◽  
Author(s):  
Stephanie Bley ◽  
Max Rückmann ◽  
Alejandra Castro-Carranza ◽  
Florian Meierhofer ◽  
Lutz Mädler ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Optical Characterization ◽  
Core Shell ◽  
Shell Nanowires

The Synthesis and Characterization of Novel Cadmium Sulphide Nanocrystallites and their Thin Films

2014 ◽  
Vol 875-877 ◽  
pp. 228-231
Author(s):  
Shafique Ahmed Arain ◽  
Christopher Wilkins ◽  
Hafiz Badaruddin
Keyword(s):  
Thin Films ◽  
Vapour Deposition ◽  
Hexagonal Phase ◽  
Chemical Vapour ◽  
Cadmium Sulphide ◽  
Spherical Shape ◽  
Sem Analysis ◽  
Diethyl Dithiocarbamate ◽  
Lower Temperature

Diethyl dithiocarbamate [Cd (S2CN Et2)2] complex is used to deposit the cadmium sulphide thin film at much lower temperature by Aerosol Assisted Chemical Vapour deposition (AACVD) and same precursor is used to synthesize the nanocrystals in Oleylamine at elevated temperature. Thermogravimetric analysis shows that precursor [Cd (S2CN Et2)2] decomposes in the single stage, losing 62% of total weight. Deposition of thin films at 300°C and 400°C showed the growth of CdS clusters which were made of granular crystallites. These results are confirmed by SEM analysis. Thermolysis of the precursor in oleylamine at 240°C gave the nanoparticles most of them are monodispersed spherical shape, few having mono and dipod structures. TEM images confirm the structures. XRD results show the thin films and nanoparticles have hexagonal phase of CdS.

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