scholarly journals Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors

Materials ◽  
2020 ◽  
Vol 13 (6) ◽  
pp. 1400 ◽  
Author(s):  
Ziyuan Li ◽  
Jeffery Allen ◽  
Monica Allen ◽  
Hark Hoe Tan ◽  
Chennupati Jagadish ◽  
...  
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Semiconductor Nanowires ◽  
Device Performance ◽  
Optical And Electrical Properties ◽  
Future Perspectives ◽  
Material Synthesis ◽  
One Dimensional ◽  
Single Nanowire ◽  
Tunable Bandgap

Recently, III-V semiconductor nanowires have been widely explored as promising candidates for high-performance photodetectors due to their one-dimensional morphology, direct and tunable bandgap, as well as unique optical and electrical properties. Here, the recent development of III-V semiconductor-based single nanowire photodetectors for infrared photodetection is reviewed and compared, including material synthesis, representative types (under different operation principles and novel concepts), and device performance, as well as their challenges and future perspectives.

One dimensional ternary Cu–Bi–S based semiconductor nanowires: synthesis, optical and electrical properties

2012 ◽  
Vol 22 (34) ◽  
pp. 17813 ◽  
Author(s):  
Jing Li ◽  
Haizheng Zhong ◽  
Huijuan Liu ◽  
Tianyou Zhai ◽  
Xi Wang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Semiconductor Nanowires ◽  
Optical And Electrical Properties ◽  
One Dimensional

scholarly journals High performance p-channel transistors on flexible substrate using direct roll transfer stamping

2021 ◽  
Author(s):  
Ayoub Abdulhafith Sadek Zumeit ◽  
Abhishek S Dahiya ◽  
Adamos Christou ◽  
Ravinder Dahiya
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Flexible Substrate ◽  
Electronic Devices ◽  
Silicon On Insulator ◽  
Flexible Substrates ◽  
Device Performance ◽  
Mechanical Bending ◽  
P Type

Abstract lexible electronics with high-performance devices is crucial for transformative advances in several emerging and traditional applications. To address this need, herein we present p-type silicon (Si) nanoribbons (NR)-based high-performance field-effect transistors (FETs) developed using innovative Direct Roll Transfer Stamping (DRTS) process. First, ultrathin Si NRs (~70 nm) are obtained from silicon on insulator (SOI) wafers using conventional top-down method, and then DRTS method is employed to directly place the NRs onto flexible substrates at room temperature (RT). The NRFETs are then developed following RT fabrication process which include deposition of high-quality SiNx dielectric. The fabricated p-channel transistors demonstrate high linear mobility ~100±10 cm2/Vs, current on/off ratio >10^4, and low gate leakage (<1nA). Further, the transistors showed robust device performance under mechanical bending and at wide temperature range (15 to 90 °C), showing excellent potential for futuristic high-performance flexible electronic devices/circuits.

Room-temperature water-vapor annealing for high-performance planar perovskite solar cells

2016 ◽  
Vol 4 (44) ◽  
pp. 17267-17273 ◽  
Author(s):  
Binbin Wang ◽  
Zhi-Guo Zhang ◽  
Senyun Ye ◽  
Haixia Rao ◽  
Zuqiang Bian ◽  
...  
Keyword(s):  
Solar Cells ◽  
Water Vapor ◽  
High Performance ◽  
Room Temperature ◽  
Perovskite Solar Cells ◽  
Photovoltaic Device ◽  
Device Performance ◽  
Vapor Annealing ◽  
Annealing Method ◽  
Temperature Water

A room-temperature water-vapor annealing method was developed to fabricate high crystallinity and void-free perovskite films, improving their photovoltaic device performance.

scholarly journals Plasmonic hollow gold nanoparticles induced high-performance Bi2S3 nanoribbon photodetector

Nanophotonics ◽  
2017 ◽  
Vol 6 (2) ◽  
pp. 494-501 ◽  
Author(s):  
Feng-Xia Liang ◽  
Cai-Wang Ge ◽  
Teng-Fei Zhang ◽  
Wei-Jie Xie ◽  
Deng-Yue Zhang ◽  
...  
Keyword(s):  
Gold Nanoparticles ◽  
High Performance ◽  
Performance Enhancement ◽  
Green Light ◽  
Semiconductor Nanostructures ◽  
Localized Surface Plasmon ◽  
Device Performance ◽  
Theoretical Simulation ◽  
One Dimensional ◽  
Hollow Gold Nanoparticles

AbstractA high performance hollow gold nanoparticles (HGNs) decorated one-dimensional (1-D) Bi2S3nanoribbon (NR) photodetector was fabricated for green light detection (560 nm). The single crystal 1-D Bi2S3NRs with growth orientation along [001] were synthesized by a simple solvothermal approach. Optoelectronic analysis reveals that the performance of the plasmonic photodetector was greatly enhanced after decoration with HGNs. For example, the responsivity increases from 1.4 × 102to 1.09 × 103AW−1, the conductivity gain from 2.68 × 102to 2.31 × 103, and the detectivity from 2.45 × 1012to 2.78 × 1013, respectively. Such performance enhancement was attributed to the localized surface plasmon resonance (LSPR) effect caused by the HGNs according to both experiment and theoretical simulation. This study is believed to open up new opportunities for managing light and enhancing the device performance of other 1-D semiconductor nanostructures based optoelectronic devices and systems.

scholarly journals High electron mobility in strained GaAs nanowires

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Leila Balaghi ◽  
Si Shan ◽  
Ivan Fotev ◽  
Finn Moebus ◽  
Rakesh Rana ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Electron Mobility ◽  
High Performance ◽  
Room Temperature ◽  
High Mobility ◽  
Semiconductor Nanowires ◽  
Core Shell ◽  
High Electron ◽  
Bulk Crystals ◽  
Gaas Nanowires

AbstractTransistor concepts based on semiconductor nanowires promise high performance, lower energy consumption and better integrability in various platforms in nanoscale dimensions. Concerning the intrinsic transport properties of electrons in nanowires, relatively high mobility values that approach those in bulk crystals have been obtained only in core/shell heterostructures, where electrons are spatially confined inside the core. Here, it is demonstrated that the strain in lattice-mismatched core/shell nanowires can affect the effective mass of electrons in a way that boosts their mobility to distinct levels. Specifically, electrons inside the hydrostatically tensile-strained gallium arsenide core of nanowires with a thick indium aluminium arsenide shell exhibit mobility values 30–50 % higher than in equivalent unstrained nanowires or bulk crystals, as measured at room temperature. With such an enhancement of electron mobility, strained gallium arsenide nanowires emerge as a unique means for the advancement of transistor technology.

High Performance Optoelectronic Devices Based on Bright Perovskite Nanocrystals Synthesized at Room Temperature

2018 ◽  
Author(s):  
Sotirios Christodoulou ◽  
Francesco Di Stasio ◽  
Santanu Pradhan ◽  
Inigo Ramiro ◽  
Yu Bi ◽  
...  
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Optoelectronic Devices ◽  
Perovskite Nanocrystals

Improving the Organic Semiconductor- Metal Contact Interface in Printed High Performance Organic TFTs

2012 ◽  
Vol 1402 ◽  
Author(s):  
Kanan Puntambekar ◽  
Lisa Stecker ◽  
Kurt Ulmer ◽  
Themistokles Afentakis ◽  
Steven Droes
Keyword(s):  
Organic Semiconductor ◽  
High Performance ◽  
Thin Film Transistor ◽  
Device Performance ◽  
Organic Thin Film ◽  
Contact Interface ◽  
Organic Thin Film Transistor ◽  
Metal Electrodes ◽  
Free Surfaces ◽  
Gas Plasma

ABSTRACTOptimization of the interface between the organic semiconductor (OSC) & the source-drain (S/D) electrode is critical in order to improve organic thin film transistor (OTFT) device performance. This process typically involves coating the metal S/D electrodes with an optimal self-assembled thiol layer; a process that requires pristine metal surfaces for successful treatment. Obtaining contamination free surfaces can be challenging in the case of printed metal electrodes. Here we demonstrate an effective strategy to address this issue by introducing a brief low power forming gas plasma treatment prior to the surface coating step. We show a two orders of magnitude decrease in the contact resistance as a result of this treatment.

Star-shaped arylacetylene resins derived from silicon

2020 ◽  
Vol 40 (8) ◽  
pp. 676-684
Author(s):  
Niping Dai ◽  
Junkun Tang ◽  
Manping Ma ◽  
Xiaotian Liu ◽  
Chuan Li ◽  
...  
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Mechanical Test ◽  
Flexural Modulus ◽  
Mechanical Analysis ◽  
Reinforced Composites ◽  
Scanning Calorimetry ◽  
Chemical Structures ◽  
Structures And Properties ◽  
High Performance Resin

AbstractStar-shaped arylacetylene resins, tris(3-ethynyl-phenylethynyl)methylsilane, tris(3-ethynyl-phenylethynyl) phenylsilane, and tris (3-ethynyl-phenylethynyl) silane (TEPHS), were synthesized through Grignard reaction between 1,3-diethynylbenzene and three types of trichlorinated silanes. The chemical structures and properties of the resins were characterized by means of nuclear magnetic resonance, fourier-transform infrared spectroscopy, Haake torque rheomoter, differential scanning calorimetry, dynamic mechanical analysis, mechanical test, and thermogravimetric analysis. The results show that the melt viscosity at 120 °C is lower than 150 mPa⋅s, and the processing windows are as wide as 60 °C for the resins. The resins cure at the temperature as low as 150 °C. The good processabilities make the resins to be suitable for resin transfer molding. The cured resins exhibit high flexural modulus and excellent heat-resistance. The flexural modulus of the cured TEPHS at room temperature arrives at as high as 10.9 GPa. Its temperature of 5% weight loss (Td5) is up to 697 °C in nitrogen. The resins show the potential for application in fiber-reinforced composites as high-performance resin in the field of aviation and aerospace.

scholarly journals High performance self-powered photodetector based on 1D Te-2D WS2 mixed-dimensional heterostructure

2021 ◽  
Author(s):  
Lixiang Han ◽  
Mengmeng Yang ◽  
Peiting Wen ◽  
Wei Gao ◽  
nengjie huo ◽  
...  
Keyword(s):  
High Performance ◽  
Van Der Waals ◽  
Sharp Interface ◽  
Two Dimensional ◽  
High Quality ◽  
One Dimensional ◽  
Self Powered

One dimensional (1D)-two dimensional (2D) van der Waals (vdWs) mixed-dimensional heterostructures with advantages of atomically sharp interface, high quality and good compatibility have attracted tremendous attention in recent years. The...

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