scholarly journals Evidence of Stress Development as a Source of Driving Force for Grain-Boundary Migration in a Ni Bicrystalline TEM Specimen

Materials ◽  
2020 ◽  
Vol 13 (2) ◽  
pp. 360
Author(s):  
Sung Bo Lee ◽  
Jinwook Jung ◽  
Heung Nam Han
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Grain Boundary ◽  
Focused Ion Beam ◽  
Boundary Migration ◽  
Ion Beam ◽  
Grain Boundary Migration ◽  
Migration Behavior ◽  
Stress Development ◽  
Transmission Electron

In a previous study, using high-resolution transmission electron microscopy (HRTEM), we examined grain-boundary migration behavior in a Ni bicrystal. A specimen for transmission electron microscopy (TEM) was prepared using focused ion beam. The Ni lamella in the specimen was composed of two grains with surface normal directions of [1 0 0] and [1 1 0]. As the lamella was heated to 600 °C in a TEM, it was subjected to compressive stresses. The stress state of the Ni lamella approximated to the isostress condition, which was confirmed by a finite element method. However, the stress development was not experimentally confirmed in the previous study. In the present study, we present an observation of stacking faults with a length of 40–70 nm at the grain boundary as direct evidence of the stress development.

scholarly journals Cross-Sectional TEM Studies of DIGM in Irradiated Au-Cu Bilayers

1992 ◽  
Vol 279 ◽  
Author(s):  
Yuzun Gao ◽  
Dale E. Alexander ◽  
L. E. Rehn
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Grain Boundary ◽  
Energy Dispersive Spectroscopy ◽  
Boundary Migration ◽  
Grain Boundary Migration ◽  
Cross Sectional ◽  
X Ray ◽  
Small Probe ◽  
Transmission Electron

ABSTRACTCross-sectional transmission electron microscopy was used to study diffusion-induced grain boundary migration (DIGM) in irradiated and annealed Au/Cu bilayers. Using this technique, in combination with small probe X-ray energy dispersive spectroscopy, DIGM alloyed zones in Au were identified in an irradiated sample.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

Transmission Electron Microscopy (TEM) Specimen Preparation Technique using Focused Ion Beam (FIB): Application to Material Characterization of Chemical Vapor Deposition of Tungsten (W) and Tungsten Silicides (WSix)

1997 ◽  
Author(s):  
K. Doong ◽  
J.-M. Fu ◽  
Y.-C. Huang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Transmission Electron

Abstract The specimen preparation technique using focused ion beam (FIB) to generate cross-sectional transmission electron microscopy (XTEM) samples of chemical vapor deposition (CVD) of Tungsten-plug (W-plug) and Tungsten Silicides (WSix) was studied. Using the combination method including two axes tilting[l], gas enhanced focused ion beam milling[2] and sacrificial metal coating on both sides of electron transmission membrane[3], it was possible to prepare a sample with minimal thickness (less than 1000 A) to get high spatial resolution in TEM observation. Based on this novel thinning technique, some applications such as XTEM observation of W-plug with different aspect ratio (I - 6), and the grain structure of CVD W-plug and CVD WSix were done. Also the problems and artifacts of XTEM sample preparation of high Z-factor material such as CVD W-plug and CVD WSix were given and the ways to avoid or minimize them were suggested.

A Methodology to Reduce Ion Beam Induced Damage in TEM Specimens Prepared by FIB

2002 ◽  
Author(s):  
Chin Kai Liu ◽  
Chi Jen. Chen ◽  
Jeh Yan.Chiou ◽  
David Su
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Tem Analysis ◽  
Sensitive Issue ◽  
Transmission Electron

Abstract Focused ion beam (FIB) has become a useful tool in the Integrated Circuit (IC) industry, It is playing an important role in Failure Analysis (FA), circuit repair and Transmission Electron Microscopy (TEM) specimen preparation. In particular, preparation of TEM samples using FIB has become popular within the last ten years [1]; the progress in this field is well documented. Given the usefulness of FIB, “Artifact” however is a very sensitive issue in TEM inspections. The ability to identify those artifacts in TEM analysis is an important as to understanding the significance of pictures In this paper, we will describe how to measure the damages introduced by FIB sample preparation and introduce a better way to prevent such kind of artifacts.

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