scholarly journals Phase Formation Behavior and Thermoelectric Transport Properties of P-Type YbxFe3CoSb12 Prepared by Melt Spinning and Spark Plasma Sintering

Materials ◽  
2019 ◽  
Vol 13 (1) ◽  
pp. 87 ◽  
Author(s):  
Kyu Hyoung Lee ◽  
Sang Hyun Bae ◽  
Soon-Mok Choi

Formation of multiple phases is considered an effective approach for enhancing the performance of thermoelectric materials since it can reduce the thermal conductivity and improve the power factor. Herein, we report the in-situ generation of a submicron-scale (~500 nm) heterograin structure in p-type Yb-filled (Fe,Co)4Sb12 skutterudites during the melt spinning process. Mixed grains of YbxFe3−yCo1+ySb12 and YbzFe3+yCo1−ySb12 were formed in melt spun ribbons due to uneven distribution of cations. By the formation of interfaces between two different grains, the power factor was enhanced due to the formation of an energy barrier for carrier transport, and simultaneously the lattice thermal conductivity was reduced due to the intensified boundary phonon scattering. A high thermoelectric figure of merit zT of 0.66 was obtained at 700 K.

2021 ◽  
Vol 11 (3) ◽  
pp. 910
Author(s):  
Hyun-Sik Kim ◽  
TaeWan Kim ◽  
Jiwoo An ◽  
Dongho Kim ◽  
Ji Hoon Jeon ◽  
...  

The formation of secondary phases of NiTe2 and NbTe2 in p-type Bi0.5Sb1.5Te3 thermoelectric alloys was investigated through in situ phase separation by using the melt spinning process. Adding stoichiometric Ni, Nb, and Te in a solid-state synthesis process of Bi0.5Sb1.5Te3, followed by rapid solidification by melt spinning, successfully segregated NiTe2 and NbTe2 in the Bi0.5Sb1.5Te3 matrix. Since heterointerfaces of Bi0.5Sb1.5Te3 with NiTe2 and NbTe2 form potential barriers of 0.26 and 0.08 eV, respectively, a low energy carrier filtering effect can be expected; higher Seebeck coefficients and power factors were achieved for Bi0.5Sb1.5Te3(NiTe2)0.01 (250 μV/K and 3.15 mW/mK2), compared to those of Bi0.5Sb1.5Te3 (240 μV/K and 2.69 mW/mK2). However, there was no power factor increase for NbTe2 segregated samples. The decrease in thermal conductivity was seen due to the possible additional phonon scattering by the phase segregations. Consequently, zT at room temperature was enhanced to 0.98 and 0.94 for Bi0.5Sb1.5Te3(NiTe2)0.01 and Bi0.5Sb1.5Te3(NbTe2)0.01, respectively, compared to 0.79 for Bi0.5Sb1.5Te3. The carrier filtering effect induced by NiTe2 segregations with an interface potential barrier of 0.26 eV effectively increased the Seebeck coefficient and power factor, thus improving the zT of p-type Bi0.5Sb1.5Te3, while the interface potential barrier of 0.08 eV of NbTe2 segregation appeared to be too small to induce an effective carrier filtering effect.


Molecules ◽  
2021 ◽  
Vol 26 (21) ◽  
pp. 6376
Author(s):  
Cong Wang ◽  
Zhiyuan Xu ◽  
Ke Xu ◽  
Guoying Gao

Although some atomically thin 2D semiconductors have been found to possess good thermoelectric performance due to the quantum confinement effect, most of their behaviors occur at a higher temperature. Searching for promising thermoelectric materials at room temperature is meaningful and challenging. Inspired by the finding of moderate band gap and high carrier mobility in monolayer GeP3, we investigated the thermoelectric properties by using semi-classical Boltzmann transport theory and first-principles calculations. The results show that the room-temperature lattice thermal conductivity of monolayer GeP3 is only 0.43 Wm−1K−1 because of the low group velocity and the strong anharmonic phonon scattering resulting from the disordered phonon vibrations with out-of-plane and in-plane directions. Simultaneously, the Mexican-hat-shaped dispersion and the orbital degeneracy of the valence bands result in a large p-type power factor. Combining this superior power factor with the ultralow lattice thermal conductivity, a high p-type thermoelectric figure of merit of 3.33 is achieved with a moderate carrier concentration at 300 K. The present work highlights the potential applications of 2D GeP3 as an excellent room-temperature thermoelectric material.


2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Syed Waqar Hasan ◽  
Hyeona Mun ◽  
Sang Il Kim ◽  
Jung Young Cho ◽  
Jong Wook Roh ◽  
...  

We herein report the electronic and thermal transport properties of p-type Bi0.5Sb1.5Te3polycrystalline bulks with dense pore structure. Dense pore structure was fabricated by vaporization of residual Te during the pressureless annealing of spark plasma sintered bulks of Te coated Bi0.5Sb1.5Te3powders. The lattice thermal conductivity was effectively reduced to the value of 0.35 W m−1 K−1at 300 K mainly due to the phonon scattering by pores, while the power factor was not significantly affected. An enhancedZTof 1.24 at 300 K was obtained in spark plasma sintered and annealed bulks of 3 wt.% Te coated Bi0.5Sb1.5Te3by these synergetic effects.


2017 ◽  
Vol 729 ◽  
pp. 1209-1214 ◽  
Author(s):  
Geonsik Son ◽  
Kyu Hyoung Lee ◽  
Hae-Woong Park ◽  
Arnaud Caron ◽  
Il-Ho Kim ◽  
...  

2018 ◽  
Vol 6 (39) ◽  
pp. 18928-18937 ◽  
Author(s):  
Yuchong Qiu ◽  
Ying Liu ◽  
Jinwen Ye ◽  
Jun Li ◽  
Lixian Lian

Doping Sn into the Cu2Te lattice can synergistically enhance the power factor and decrease thermal conductivity, leading to remarkably optimized zTs. The lone pair electrons from the 5s orbital of Sn can increase the DOS near the Fermi level of Cu2Te to promote PF and reduce κe by decreasing the carrier concentration. This study explores a scalable strategy to optimize the thermoelectric performance for intrinsically highly degenerate semiconductors.


2021 ◽  
Vol 871 ◽  
pp. 203-207
Author(s):  
Jian Liu

In this work, we use first principles DFT calculations, anharmonic phonon scatter theory and Boltzmann transport method, to predict a comprehensive study on the thermoelectric properties as electronic and phonon transport of layered LaSe2 crystal. The flat-and-dispersive type band structure of LaSe2 crystal offers a high power factor. In the other hand, low lattice thermal conductivity is revealed in LaSe2 semiconductor, combined with its high power factor, the LaSe2 crystal is considered a promising thermoelectric material. It is demonstrated that p-type LaSe2 could be optimized to exhibit outstanding thermoelectric performance with a maximum ZT value of 1.41 at 1100K. Explored by density functional theory calculations, the high ZT value is due to its high Seebeck coefficient S, high electrical conductivity, and low lattice thermal conductivity .


Nanoscale ◽  
2020 ◽  
Vol 12 (24) ◽  
pp. 12760-12766 ◽  
Author(s):  
Lei Chen ◽  
Weiyao Zhao ◽  
Meng Li ◽  
Guangsai Yang ◽  
Sheik Md Kazi Nazrul Islam ◽  
...  

Polycrystalline SnSe sample with graphene embedded in realized the enhancement of phonon scattering and achieved ultralow thermal conductivity.


2020 ◽  
Vol 93 (11) ◽  
Author(s):  
Neophytos Neophytou ◽  
Vassilios Vargiamidis ◽  
Samuel Foster ◽  
Patrizio Graziosi ◽  
Laura de Sousa Oliveira ◽  
...  

Abstract The field of thermoelectric materials has undergone a revolutionary transformation over the last couple of decades as a result of the ability to nanostructure and synthesize myriads of materials and their alloys. The ZT figure of merit, which quantifies the performance of a thermoelectric material has more than doubled after decades of inactivity, reaching values larger than two, consistently across materials and temperatures. Central to this ZT improvement is the drastic reduction in the material thermal conductivity due to the scattering of phonons on the numerous interfaces, boundaries, dislocations, point defects, phases, etc., which are purposely included. In these new generation of nanostructured materials, phonon scattering centers of different sizes and geometrical configurations (atomic, nano- and macro-scale) are formed, which are able to scatter phonons of mean-free-paths across the spectrum. Beyond thermal conductivity reductions, ideas are beginning to emerge on how to use similar hierarchical nanostructuring to achieve power factor improvements. Ways that relax the adverse interdependence of the electrical conductivity and Seebeck coefficient are targeted, which allows power factor improvements. For this, elegant designs are required, that utilize for instance non-uniformities in the underlying nanostructured geometry, non-uniformities in the dopant distribution, or potential barriers that form at boundaries between materials. A few recent reports, both theoretical and experimental, indicate that extremely high power factor values can be achieved, even for the same geometries that also provide ultra-low thermal conductivities. Despite the experimental complications that can arise in having the required control in nanostructure realization, in this colloquium, we aim to demonstrate, mostly theoretically, that it is a very promising path worth exploring. We review the most promising recent developments for nanostructures that target power factor improvements and present a series of design ‘ingredients’ necessary to reach high power factors. Finally, we emphasize the importance of theory and transport simulations for materialoptimization, and elaborate on the insight one can obtain from computational tools routinely used in the electronic device communities. Graphical abstract


Author(s):  
Tao Chen ◽  
Hongwei Ming ◽  
Xiaoying Qin ◽  
Chen Zhu ◽  
Lulu Huang ◽  
...  

As a thermoelectric material, p-type CuSbSe2 has attracted much attention due to its intrinsic low thermal conductivity and environment-friendly constituents. In this work, Sb deficient compounds CuSb1-xSe2 (x=0-0.12) are prepared...


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