scholarly journals Facile Process for Surface Passivation Using (NH4)2S for the InP MOS Capacitor with ALD Al2O3

Materials ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 3917
Author(s):  
Jung Sub Lee ◽  
Tae Young Ahn ◽  
Daewon Kim
Keyword(s):  
Photoelectron Spectroscopy ◽  
Surface Passivation ◽  
Treatment Time ◽  
Oxide Semiconductor ◽  
Native Oxide ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
Ammonium Sulfide ◽  
Inp Substrate ◽  
Capacitance Voltage

Ammonium sulfide ((NH4)2S) was used for the passivation of an InP (100) substrate and its conditions were optimized. The capacitance–voltage (C–V) characteristics of InP metal-oxide-semiconductor (MOS) capacitors were analyzed by changing the concentration of and treatment time with (NH4)2S. It was found that a 10% (NH4)2S treatment for 10 min exhibits the best electrical properties in terms of hysteresis and frequency dispersions in the depletion or accumulation mode. After the InP substrate was passivated by the optimized (NH4)2S, the results of x-ray photoelectron spectroscopy (XPS) and the extracted interface trap density (Dit) proved that the growth of native oxide was suppressed.

scholarly journals Эволюция физико-химических свойств поверхности GaSb(100) в растворах сульфида аммония

2019 ◽  
Vol 53 (7) ◽  
pp. 908
Author(s):  
М.В. Лебедев ◽  
Т.В. Львова ◽  
А.Л. Шахмин ◽  
О.В. Рахимова ◽  
П.А. Дементьев ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Photoelectron Spectroscopy ◽  
Treatment Time ◽  
Solution Concentration ◽  
Native Oxide ◽  
Semiconductor Surface ◽  
Native Oxide Layer ◽  
Force Microscopy ◽  
Fermi Level Pinning ◽  
Ammonium Sulfide

AbstractVarious conditions of passivation of the GaSb(100) surface by ammonium sulfide ((NH_4)_2S) solutions depending on the solution concentration, solvent, and treatment time are investigated by X-ray photoelectron spectroscopy and atomic-force microscopy. It is shown that treatment of the GaSb(100) surface by any (NH_4)_2S solution leads to removal of the native oxide layer from the semiconductor surface and the formation of a passivating layer consisting of various gallium and antimony sulfides and oxides. The surface with the lowest roughness (RMS = 0.85 nm) is formed after semiconductor treatment with 4% aqueous ammonium sulfide solution for 30 min. Herewith, the atomic concentration ratio Ga/Sb at the surface is ~2. It is also found that aqueous ammonium sulfide solutions do not react with elemental antimony incorporated into the native-oxide layer. The latter causes a leakage current and Fermi-level pinning at the GaSb(100) surface. However, a 4% (NH_4)_2S solution in isopropanol removes elemental antimony almost completely; herewith, the semiconductor surface remains stoichiometric if a treatment duration is up to 13 min.

Comprehensive physical and electrical characterizations of NO nitrided SiO2/4H-SiC(1120) interfaces

2021 ◽  
Author(s):  
Takato Nakanuma ◽  
Yu Iwakata ◽  
Arisa Watanabe ◽  
Takuji Hosoi ◽  
Takuma Kobayashi ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Nitrogen Concentration ◽  
Depth Profiling ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Mos Capacitors ◽  
X Ray ◽  
Capacitance Voltage ◽  
Experimental Findings ◽  
Electrical Characterizations

Abstract Nitridation of SiO2/4H-SiC(1120) interfaces with post-oxidation annealing in an NO ambient (NO-POA) and its impact on the electrical properties were investigated. Sub-nm-resolution nitrogen depth profiling at the interfaces was conducted by using a scanning x-ray photoelectron spectroscopy microprobe. The results showed that nitrogen atoms were incorporated just at the interface and that interface nitridation proceeded much faster than at SiO2/SiC(0001) interfaces, resulting in a 2.3 times higher nitrogen concentration. Electrical characterizations of metal-oxide-semiconductor capacitors were conducted through capacitance-voltage (C–V) measurements in the dark and under illumination with ultraviolet light to evaluate the electrical defects near the conduction and valence band edges and those causing hysteresis and shifting of the C–V curves. While all of these defects were passivated with the progress of the interface nitridation, excessive nitridation resulted in degradation of the MOS capacitors. The optimal conditions for NO-POA are discussed on the basis of these experimental findings.

Retarded Oxide Growth on 4H-SiC(0001) Substrates due to Sacrificial Oxidation

2014 ◽  
Vol 778-780 ◽  
pp. 562-565 ◽  
Author(s):  
Takuji Hosoi ◽  
Yusuke Uenishi ◽  
Yuki Nakano ◽  
Takashi Nakamura ◽  
Takayoshi Shimura ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Frequency Dispersion ◽  
Oxide Thickness ◽  
Oxide Semiconductor ◽  
Oxidation Treatment ◽  
Mos Capacitor ◽  
X Ray ◽  
Initial Stage ◽  
Capacitance Voltage ◽  
The Impact

The impact of a sacrificial oxidation treatment on subsequent gate oxide formation on 4H-SiC(0001) substrates was investigated. Although x-ray photoelectron spectroscopy (XPS) analysis revealed that the SiC surface after removing a 40-nm-thick sacrificial oxide by diluted HF solution was almost identical to that of an as-grown epilayer, the subsequent dry O2 oxidation resulted in a thinner SiO2 layer for the sample with the sacrificial oxidation in the ultrathin film regime (~3 nm). The metal-oxide-semiconductor (MOS) capacitor with sacrificial oxidation also exhibited a larger frequency dispersion in capacitance-voltage (C-V) characteristics, indicating that interface property had been degraded. However, when the oxide thickness reached about 10 nm, there was no difference in frequency dispersion with and without sacrificial oxidation. This means that the SiO2 growth in the initial stage of oxidation was significantly affected by the sacrificial oxidation treatment.

Analysis of 3-Dimensional 4H-SiC MOS Capacitors Grown by Atomic Layer Deposition of Al2O3

2018 ◽  
Vol 924 ◽  
pp. 490-493 ◽  
Author(s):  
Muhammad I. Idris ◽  
Nick G. Wright ◽  
Alton B. Horsfall
Keyword(s):  
Atomic Layer Deposition ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Oxide Semiconductor ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
3 Dimensional ◽  
Layer Deposition ◽  
Show Evidence ◽  
Flatband Voltage

3-Dimensional 4H-SiC metal-oxide-semiconductor capacitors have been fabricated to determine the effect of the sidewall on the characteristics of 3-Dimentional gate structures. Al2O3 deposited by Atomic Layer Deposition (ALD) was used as the gate dielectric layer on the trench structure. The 3-D MOS capacitors exhibit increasing accumulation capacitance with excellent linearity as the sidewall area increases, indicating that ALD results in a highly conformal dielectric film. The capacitance – voltage characteristics also show evidence of a second flatband voltage, located at a higher bias than that seen for purely planar devices on the same sample. We also observe that the oxide capacitance of planar and 3-D MOS capacitors increases with temperature. Finally, we have found that the 3-D MOS capacitor has a weaker temperature dependence of flatband voltage in comparison to the conventional planar MOS capacitor due to the incorporation of the (1120) plane in the sidewall.

scholarly journals Leakage Current Conduction Mechanism of Au-Pt-Ti/ HfO2-Al2O3/n-InAlAs Metal-Oxide-Semiconductor Capacitor under Reverse-Biased Condition

Coatings ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 720
Author(s):  
He Guan ◽  
Shaoxi Wang
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Photoelectron Spectroscopy ◽  
Metal Oxide Semiconductor ◽  
Schottky Emission ◽  
Oxide Semiconductor ◽  
Optimized Design ◽  
Mos Capacitors ◽  
Leakage Mechanism ◽  
High K

Au-Pt-Ti/high-k/n-InAlAs metal-oxide-semiconductor (MOS) capacitors with HfO2-Al2O3 laminated dielectric were fabricated. We found that a Schottky emission leakage mechanism dominates the low bias conditions and Fowler–Nordheim tunneling became the main leakage mechanism at high fields with reverse biased condition. The sample with HfO2 (4 m)/Al2O3 (8 nm) laminated dielectric shows a high barrier height ϕB of 1.66 eV at 30 °C which was extracted from the Schottky emission mechanism, and this can be explained by fewer In–O and As–O states on the interface, as detected by the X-ray photoelectron spectroscopy test. These effects result in HfO2 (4 m)/Al2O3 (8 nm)/n-InAlAs MOS-capacitors presenting a low leakage current density of below 1.8 × 10−7 A/cm2 from −3 to 0 V at 30 °C. It is demonstrated that the HfO2/Al2O3 laminated dielectric with a thicker Al2O3 film of 8 nm is an optimized design to be the high-k dielectric used in Au-Pt-Ti/HfO2-Al2O3/InAlAs MOS capacitor applications.

The Interface Properties of La2O3/GaAs System by Surface Passivation

2012 ◽  
Vol 557-559 ◽  
pp. 1815-1818 ◽  
Author(s):  
Ting Ting Jia ◽  
Xing Hong Cheng ◽  
Duo Cao ◽  
Da Wei Xu ◽  
You Wei Zhang ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Surface Passivation ◽  
Gate Dielectric ◽  
Surface Preparation ◽  
Atomic Layer ◽  
Native Oxide ◽  
Atomic Force ◽  
Transmission Electron ◽  
Layer Deposition

In this work, La2O3 gate dielectric film was deposited by plasma enhanced atomic layer deposition. we investigate the effect of surface preparation of GaAs substrate, for example, native oxide, S-passivation, and NH3 plasma in situ treatment. The interfacial reaction mechanisms of La2O3 on GaAs is studied by means of X-ray photoelectron spectroscopy(XPS), high-resolution transmission electron microscopy(HRTEM) and atomic force microscope (AFM). As-O bonding is found to get effectively suppressed in the sample GaAs structures with both S-passivation and NH3 plasma surface treatments.

Thick Oxide Layers on N and P SiC Wafers by a Depo-Conversion Technique

1999 ◽  
Vol 572 ◽  
Author(s):  
Q. Zhang ◽  
V. Madangarli ◽  
I. Khlebnikov ◽  
S. Soloviev ◽  
T. S. Sudarshan
Keyword(s):  
Electrical Properties ◽  
Effective Charge ◽  
High Frequency ◽  
Breakdown Field ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
Oxide Layers ◽  
Oxide Breakdown ◽  
Thermal Oxide ◽  
Capacitance Voltage

ABSTRACTThe electrical properties of thick oxide layers on n and p-type 6H-SiC obtained by a depoconversion technique are presented. High frequency capacitance-voltage measurements on MOS capacitors with a ∼ 3000 Å thick oxide indicates an effective charge density comparable to that of MOS capacitors with thermal oxide. The breakdown field of the depo-converted oxide obtained using a ramp response technique indicates a good quality oxide with average values in excess of 6 MV/cm on p-type SiC and 9 MV/cm on n-type SiC. The oxide breakdown field was observed to decrease with increase in MOS capacitor diameter.

Electrical Properties of Metal-Oxide-Semiconductor (MOS) Structures on 4H-SiC(0001) Formed by Oxidizing Pre-Deposited SixNy

2007 ◽  
Vol 556-557 ◽  
pp. 647-650 ◽  
Author(s):  
Jeong Hyun Moon ◽  
Dong Hwan Kim ◽  
Ho Keun Song ◽  
Jeong Hyuk Yim ◽  
Wook Bahng ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Metal Oxide ◽  
Current Density ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Field ◽  
Mos Capacitors ◽  
Dielectric Layers ◽  
Capacitance Voltage ◽  
Mos Structures

We have fabricated advanced metal-oxide-semiconductor (MOS) capacitors with ultra thin (5 nm) remote-PECVD SixNy dielectric layers and investigated electrical properties of nitrided SiO2/4H-SiC interface after oxidizing the SixNy in dry oxygen at 1150 °C for 30, 60, 90 min. Improvements of electrical properties have been revealed in capacitance-voltage (C-V) and current density-electrical field (J-E) measurements in comparison with dry oxide. The improvements of SiC MOS capacitors formed by oxidizing the pre-deposited SixNy have been explained in this paper.

Impact of Phosphorus Implantation on the Electrical Properties of SiO2/4H-SiC Interfaces Annealed in N2O

2016 ◽  
Vol 858 ◽  
pp. 701-704
Author(s):  
Patrick Fiorenza ◽  
Salvatore di Franco ◽  
Filippo Giannazzo ◽  
Simone Rascunà ◽  
Mario Saggio ◽  
...  
Keyword(s):  
High Temperature ◽  
High Resolution ◽  
Electrical Properties ◽  
Surface Region ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Activation ◽  
Mos Capacitors ◽  
Capacitance Voltage ◽  
Electrical Effect

In this work, the combined effect of a shallow phosphorus (P) pre-implantation and of a nitridation annealing in N2O on the properties of the SiO2/4H-SiC interface has been investigated. The peak carrier concentration and depth extension of the electrically active dopants introduced by the nitridation and by the combination of P pre-implantation and nitridation were determined by high resolution scanning capacitance microscopy (SCM). Macroscopic capacitance-voltage (C-V) measurements on metal oxide semiconductor (MOS) capacitors and nanoscale C-V analyses by SCM allowed to quantify the electrical effect of the donors introduced underneath the SiO2/4H-SiC interface. Phosphorous pre-implantation and subsequent high temperature electrical activation has been shown not only to produce an increased doping in the 4H-SiC surface region but also a better homogeneity of surface potential with respect to the use of N2O annealing only.

Angle Resolved XPS Analysis of Surface Region Defects in Rapid Thermal Annealed Antimony Implanted Silicon

1989 ◽  
Vol 163 ◽  
Author(s):  
S.N. Kumar ◽  
G. Chaussemy ◽  
A. Laugier ◽  
B. Canut ◽  
M. Charbonnier
Keyword(s):  
Photoelectron Spectroscopy ◽  
Oxygen Diffusion ◽  
Surface Region ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Dose ◽  
Thermal Treatments ◽  
X Ray ◽  
Capacitance Voltage

AbstractAngle-resolved X-ray photoelectron spectroscopy characterization of the surface region of high-dose Sb+ ion implanted silicon, after rapid thermal treatments over various temperatures, is reported. The results obtained are compared with the Rutherford backscattering data and the capacitance-voltage measurements on the metal-oxide-semiconductor mesa structures built on them. Rapid anneal at 1100 °C of the 1.4×1016 Sb+/cm2 samples showed an anomalous deep oxygen diffusion inside the implanted region.

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