scholarly journals Conductivity Size Effect of Square Cross-Section Polycrystalline Nanowires

Materials ◽  
2019 ◽  
Vol 12 (13) ◽  
pp. 2129
Author(s):  
Rui Li ◽  
Lan Mi ◽  
Jian Wang ◽  
Mao Mao ◽  
Wenhua Gu ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Theoretical Model ◽  
Grain Boundary ◽  
Size Effect ◽  
Cross Section ◽  
External Surface ◽  
Surface Scattering ◽  
Boundary Scattering ◽  
Experiment Data ◽  
Carrier Scattering

A theoretical model for the electrical conductivity size effect of square nanowires is proposed in this manuscript, which features combining the three main carrier scattering mechanisms in polycrystalline nanowires together, namely, background scattering, external surface scattering, as well as grain boundary scattering. Comparisons to traditional models and experiment data show that this model achieves a higher correlation with the experiment data.

scholarly journals Response to Comments on Paper on Grain Boundary Scattering Model for Metals

1981 ◽  
Vol 9 (2) ◽  
pp. 105-109 ◽  
Author(s):  
F. Warkusz
Keyword(s):  
Electrical Conductivity ◽  
Grain Boundary ◽  
Electron Scattering ◽  
Metal Film ◽  
External Surface ◽  
Surface Scattering ◽  
Boundary Scattering ◽  
Surface Electron ◽  
Polycrystalline Metal ◽  
Grain Boundary Scattering

The electrical conductivity of a polycrystalline metal film has been studied for a model in which the background scattering and grain boundary scattering are independent. The external surface electron scattering has been analyzed by assuming it to be independent of background scattering and thus the external surface scattering can be conveniently described with the Cottey method.

Thermal and Electrical Conductivities of Polycrystalline Metallic Nanofilms Based on the Kinetic Theory

2008 ◽  
Author(s):  
Bo Feng ◽  
Zhixin Li ◽  
Xing Zhang
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Grain Boundary ◽  
Kinetic Theory ◽  
Size Effect ◽  
Free Path ◽  
Coulomb Blockade ◽  
Mean Free Path ◽  
Surface Scattering ◽  
Inelastic Electron

A model is developed for in-plane thermal conductivity of nanostructured metallic films based on the kinetic theory, which attributes the reduced thermal conductivity to the reduced mean free path of electrons. The partially inelastic electron-surface scattering and grain-boundary impedance by quantum mechanical treatment are elaborately included. Meanwhile, the mean free path of electrons is also used to study in-plane electrical conductivity of nanofilms. Both electrical conductivity and thermal conductivity, varying with film thickness and temperature, are observed to be lower than corresponding bulk values, agreeing well with the experimental data. The grain-boundary scattering is theoretically found to dominate over surface scattering to enhance the size effect on electrical and thermal conductivities. In addition, the size effect in low temperature appears more dramatic due to larger electron Knudsen number. We further examine the Lorenz number of nanofilms and find the Wiedemann-Franz law is seriously violated. The Coulomb blockade and the neutral excitation of electron-hole pair are used to offer a more detailed picture. Excessive thermal conductivity is also evaluated resorting to concepts in granular metals to show the validity of this account.

scholarly journals Understanding the thermally activated charge transport in NaPbmSbQm+2 (Q = S, Se, Te) thermoelectrics: weak dielectric screening leads to grain boundary dominated charge carrier scattering

2020 ◽  
Vol 13 (5) ◽  
pp. 1509-1518 ◽  
Author(s):  
Tyler J. Slade ◽  
Jann A. Grovogui ◽  
Jimmy Jiahong Kuo ◽  
Shashwat Anand ◽  
Trevor P. Bailey ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Grain Boundary ◽  
Charge Carrier ◽  
Charge Transport ◽  
Carrier Screening ◽  
Thermally Activated ◽  
Carrier Scattering ◽  
Dielectric Screening ◽  
Charge Carrier Scattering

Addressing the irregular electrical conductivity in PbQ–NaSbQ2 thermoelectrics. Increasing the NaSbSe2 fraction weakens charge carrier screening and strengthens GB scattering.

Enhancing the average thermoelectric figure of merit of elemental Te by suppressing grain boundary scattering

2020 ◽  
Vol 8 (17) ◽  
pp. 8455-8461 ◽  
Author(s):  
Yehao Wu ◽  
Feng Liu ◽  
Qi Zhang ◽  
Tiejun Zhu ◽  
Kaiyang Xia ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Grain Boundary ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Boundary Scattering ◽  
Thermoelectric Figure ◽  
Grain Boundary Scattering

Suppressed grain boundary scattering contributes to enhanced electrical conductivity and device zT in elemental Te based thermoelectric materials.

scholarly journals Size Effects in Metallic Films

1978 ◽  
Vol 5 (2) ◽  
pp. 99-105 ◽  
Author(s):  
F. Warkusz
Keyword(s):  
Grain Boundary ◽  
Film Thickness ◽  
Size Effects ◽  
Approximate Expression ◽  
Surface Scattering ◽  
Boundary Scattering ◽  
Metallic Films ◽  
Grain Boundary Scattering ◽  
Grain Diameter

Based on the theories so far developed, an approximate expression for the resistivity of metallic films is derived, which takes into account film thickness, grain diameter, as well as the coefficients of surface scattering and grain boundary scattering. The derived formulae are compared with the results achieved by other authors.

scholarly journals Size and Grain-Boundary Effects in the Electrical Conductivity of Thin Monocrystalline Films

1978 ◽  
Vol 5 (2) ◽  
pp. 127-131 ◽  
Author(s):  
C. R. Tellier
Keyword(s):  
Electrical Conductivity ◽  
Relaxation Time ◽  
Boltzmann Equation ◽  
Reflection Coefficient ◽  
Grain Boundary ◽  
Boundary Effects ◽  
Boundary Scattering ◽  
Single Relaxation Time ◽  
Monocrystalline Film ◽  
Film Conductivity

By assuming that the scattering processes from other sources than grain-boundaries can be described by a single relaxation timeτ∗and then by solving a Boltzmann equation in which grain-boundary scattering is accounted for, we have obtained an analytical expression for the thin monocrystalline film conductivity in terms of the reduced thicknesskand the grain-boundary reflection coefficientr. Numerical tables are given to show the agreement of the above expression with the Mayadas-Shatzkes expression.

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