scholarly journals Correlation of Different Electrical Parameters of Solar Cells with Silver Front Electrodes

Materials ◽  
2019 ◽  
Vol 12 (3) ◽  
pp. 366 ◽  
Author(s):  
Małgorzata Musztyfaga-Staszuk ◽  
Damian Janicki ◽  
Piotr Panek
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Electrical Properties ◽  
Strongly Correlated ◽  
Electrical Parameters ◽  
Cell Parameters ◽  
Current Voltage ◽  
Comparison Results ◽  
Tlm Method ◽  
Photovoltaic Solar Cells

This work presents comparison results of the selected electrical parameters of silicon solar cells manufactured with silver front electrodes which were co-fired in an infrared belt furnace in the temperature range of 840–960 °C. The commercial paste (PV19B) was used for the metallization process. Electrical properties of a batch of solar cells fabricated in one cycle were investigated. Three methods were used, including measurement of the current-voltage characteristics (I-V), measurement of contacts’ resistivity using the transmission Line model method (TLM), and measurement of contacts’ resistivity using the potential difference method (PD). This work is focused on both the different metallization temperatures of co-firing of solar cells and measurements using the above-mentioned methods. It is shown that the solar cell parameters measured with three methods have different, but strongly correlated values. Moreover, the comparative analysis was performed of the investigations of the same photovoltaic solar cells using both the TLM method and independent research stands (including one non-commercial and two commercial ones) at three different scientific units. In the PD and TLM methods, the same calculation formulae are used. It can be stated, comparing methods I-V, PD, and TLM, that for each, different parameters are determined to assess the electrical properties of the solar cell.

scholarly journals Comparison of the Values of Solar Cell Contact Resistivity Measured with the Transmission Line Method (TLM) and the Potential Difference (PD)

Materials ◽  
2021 ◽  
Vol 14 (19) ◽  
pp. 5590
Author(s):  
Małgorzata Musztyfaga-Staszuk
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Electrical Properties ◽  
Transmission Line ◽  
Contact Resistivity ◽  
Potential Difference ◽  
Firing Process ◽  
Measuring Instruments ◽  
Cell Contact ◽  
Cell Parameters

This work presents a comparison of values of the contact resistivity of silicon solar cells obtained using the following methods: the transmission line model method (TLM) and the potential difference method (PD). Investigations were performed with two independent scientific units. The samples were manufactured with silver front electrodes. The co-firing process was performed in an infrared belt furnace in a temperature range of 840 to 960 °C. The electrical properties of a batch of solar cells fabricated in two cycles were investigated. This work focuses on the different metallisation temperatures of co-firing solar cells and measurements were carried out using the methods mentioned. In the TLM and PD methods, the same calculation formulae were used. Moreover, solar cell parameters measured with these methods had the same, similar, or sometimes different but strongly correlated values. Based on an analysis of the selected databases, this article diagnoses the recent and current state of knowledge regarding the employment of the TLM and PD methods and the available hardware base. These methods are of interest to various research centres, groups of specialists dealing with the optimisation of the electrical properties of silicon photovoltaic cells, and designers of measuring instruments.

Parameter Optimization of Photovoltaic Solar Cell and Panel Using Genetic Algorithms Strategy

2016 ◽  
pp. 581-600
Author(s):  
Benmessaoud Mohammed Tarik ◽  
Fatima Zohra Zerhouni ◽  
Amine Boudghene Stambouli ◽  
Mustapha Tioursi ◽  
Aouad M'harer
Keyword(s):  
Genetic Algorithms ◽  
Solar Cells ◽  
Solar Cell ◽  
Numerical Technique ◽  
Simulated Data ◽  
Parameter Extraction ◽  
Electrical Parameters ◽  
Study Results ◽  
The One ◽  
Photovoltaic Solar Cells

In this chapter, we propose to perform a numerical technique based on genetic algorithms (GAs) to identify the electrical parameters (Is, Iph, Rs, Rsh, and n) of photovoltaic (PV) solar cells and modules. The one diode type approach is used to model the I–V characteristic of the solar cell. To extract electrical parameters, the approach is formulated as optimization problem. The GAs approach was used as a numerical technique in order to overcome problems involved in the local minima in the case optimization criteria. Compared to other methods, we find that the GAs is a very efficient technique to estimate the electrical parameters of photovoltaic solar cells and modules. Compared with other parameter extraction techniques, based on statistical study, results indicate the consistency and uniformity of method in terms of the quality of final solutions. In parallel, the simulated data with the extracted parameters of method base with GAs are in very good agreement with the experimental data in all cases.

Parameter Optimization of Photovoltaic Solar Cell and Panel Using Genetic Algorithms Strategy

2016 ◽  
pp. 1371-1390
Author(s):  
Benmessaoud Mohammed Tarik ◽  
Fatima Zohra Zerhouni ◽  
Amine Boudghene Stambouli ◽  
Mustapha Tioursi ◽  
Aouad M'harer
Keyword(s):  
Genetic Algorithms ◽  
Solar Cells ◽  
Solar Cell ◽  
Numerical Technique ◽  
Simulated Data ◽  
Parameter Extraction ◽  
Electrical Parameters ◽  
Study Results ◽  
The One ◽  
Photovoltaic Solar Cells

In this chapter, we propose to perform a numerical technique based on genetic algorithms (GAs) to identify the electrical parameters (Is, Iph, Rs, Rsh, and n) of photovoltaic (PV) solar cells and modules. The one diode type approach is used to model the I–V characteristic of the solar cell. To extract electrical parameters, the approach is formulated as optimization problem. The GAs approach was used as a numerical technique in order to overcome problems involved in the local minima in the case optimization criteria. Compared to other methods, we find that the GAs is a very efficient technique to estimate the electrical parameters of photovoltaic solar cells and modules. Compared with other parameter extraction techniques, based on statistical study, results indicate the consistency and uniformity of method in terms of the quality of final solutions. In parallel, the simulated data with the extracted parameters of method base with GAs are in very good agreement with the experimental data in all cases.

ELECTRICAL PROPERTIES OF P3HT (POLY [3-HEXYLTHIOPHENE])/n-TYPE CRYSTALLINE SILICON (n-c-Si) SOLAR CELLS

2011 ◽  
Vol 20 (04) ◽  
pp. 749-773 ◽  
Author(s):  
JAIRO C. NOLASCO ◽  
ALEJANDRA CASTRO-CARRANZA ◽  
BENJAMÍN IÑIGUEZ ◽  
JOSEP PALLARÈS ◽  
MAGALI ESTRADA
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Electrical Properties ◽  
Space Charge ◽  
Silicon Substrate ◽  
Dark Current ◽  
Crystalline Silicon ◽  
Space Charge Limited Current ◽  
Si Solar Cells ◽  
Current Voltage

Au / P 3 HT (poly [3-hexylthiophene])/n-type crystalline silicon ( n - c - Si ) solar cells have been fabricated. The Aluminum back contact is obtained by evaporation on silicon substrate. An 80 nm P 3 HT layer thick was spin-coated on silicon substrate followed by thermal annealing. Finally golden contacts are deposited by sputtering. The best characteristics of this flawed solar cell are: V oc =0.47 V , I sc =7.42 mA / cm 2 and an efficiency of 1.29%. The area of this device is 0.07 cm2. In order to get a deep understanding of the electrical properties of the heterojunction, capacitance-voltage and current-voltage-temperature measurements have been made. A compact electrical equivalent circuit has been used to describe the dark current-voltage characteristics. It is based on the combination of two exponential mechanisms, shunt and series resistances and space-charge limited current terms. From the temperature dependence of the extracted parameters we can obtain the limiting conduction mechanism. We found that the polymeric layer limits the current not only at low voltages, through Multi-Tunneling Capture Emission, but also at high voltages, through series resistance and Space-Charge Limited Current. On the other hand, the Silicon wafer limits the current at medium voltages, through the diffusion mechanism. In addition, the model is useful to estimate the open circuit voltage and built in voltage of the solar cell using only dark current voltage measurements.

Simulation and modeling of the influence of temperature on CdS/CdTe thin film solar cell

2019 ◽  
Vol 87 (3) ◽  
pp. 30101 ◽  
Author(s):  
Abdel-baset H. Mekky
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Influence Of Temperature ◽  
Cdte Solar Cell ◽  
Cell Parameters ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Influence Of Temperature On

Semiconductor materials cadmium sulfide (CdS) and cadmium telluride (CdTe) are employed in the fabrication of thin film solar cells of relatively excessive power conversion efficiency and low producing price. Simulations of thin film CdS/CdTe solar cell were carried out using SCAPS-1D. The influence of temperature field on the variation of CdTe solar cell parameters such as current–voltage, capacitance–voltage characteristics and the external quantum efficiency was investigated theoretically. For use temperatures, one obtains the external quantum efficiency has the same profiles. However, the effect of the temperature on the Mott-Schottky curves is slightly noted by variations on the characteristics. This conclusion can be used by solar cell manufacturers to improve the solar cell parameters with the biggest possible gain in device performance.

Study of Photoelectrochemical Solar Cell Using WSe2 Crystal

2013 ◽  
Vol 665 ◽  
pp. 330-335 ◽  
Author(s):  
Ripal Parmar ◽  
Dipak Sahay ◽  
R.J. Pathak ◽  
R.K. Shah
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Fill Factor ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Electrical Energy ◽  
Open Circuit ◽  
Cell Parameters ◽  
Photoelectrochemical Solar Cell ◽  
Photoelectrochemical Solar Cells

The solar cells have been used as most promising device to convert light energy into electrical energy. In this paper authors have attempted to fabricate Photoelectrochemical solar cell with semiconductor electrode using TMDCs. The Photoelectrochemical solar cells are the solar cells which convert the solar energy into electrical energy. The photoelectrochemical cells are clean and inexhaustible sources of energy. The photoelectrochemical solar cells are fabricated using WSe2crystal and electrolyte solution of 0.025M I2, 0.5M NaI, 0.5M Na2SO4. Here the WSe2crystals were grown by direct vapour transport technique. In our investigations the solar cell parameters like short circuit current (Isc) and Open circuit voltage (Voc) were measured and from that Fill factor (F.F.) and photoconversion efficiency (η) are investigated. The results obtained shows that the value of efficiency and fill factor of solar cell varies with the illumination intensities.

scholarly journals Theoretical Study of Proton Radiation Influence on the Performance of a Polycrystalline Silicon Solar Cell

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Tchouadep Guy Serge ◽  
Zouma Bernard ◽  
Korgo Bruno ◽  
Soro Boubacar ◽  
Savadogo Mahamadi ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
Short Circuit ◽  
Experimental Studies ◽  
High Energy ◽  
High Energy Particle ◽  
Proton Radiation ◽  
Electrical Parameters ◽  
Carrier Distribution

The aim of this work is to study the behaviour of a silicon solar cell under the irradiation of different fluences of high-energy proton radiation (10 MeV) and under constant multispectral illumination. Many theoretical et experimental studies of the effect of irradiation (proton, gamma, electron, etc.) on solar cells have been carried out. These studies point out the effect of irradiation on the behaviour of the solar cell electrical parameters but do not explain the causes of these effects. In our study, we explain fundamentally the causes of the effects of the irradiation on the solar cells. Taking into account the empirical formula of diffusion length under the effect of high-energy particle irradiation, we established new expressions of continuity equation, photocurrent density, photovoltage, and dynamic junction velocity. Based on these equations, we studied the behaviour of some electronic and electrical parameters under proton radiation. Theoretical results showed that the defects created by the irradiation change the carrier distribution and the carrier dynamic in the bulk of the base and then influence the solar cell electrical parameters (short-circuit current, open-circuit voltage, conversion efficiency). It appears also in this study that, at low fluence, junction dynamic velocity decreases due to the presence of tunnel defects. Obtained results could lead to improve the quality of the junction of a silicon solar cell.

scholarly journals An Analysis of Fill Factor Loss Depending on the Temperature for the Industrial Silicon Solar Cells

Energies ◽  
2020 ◽  
Vol 13 (11) ◽  
pp. 2931
Author(s):  
Kwan Hong Min ◽  
Taejun Kim ◽  
Min Gu Kang ◽  
Hee-eun Song ◽  
Yoonmook Kang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Temperature Dependence ◽  
Fill Factor ◽  
Crystalline Silicon ◽  
Crystalline Silicon Solar Cell ◽  
Initial State ◽  
Cell Parameters ◽  
Loss Analysis ◽  
Pv Module

Since the temperature of a photovoltaic (PV) module is not consistent as it was estimated at a standard test condition, the thermal stability of the solar cell parameters determines the temperature dependence of the PV module. Fill factor loss analysis of crystalline silicon solar cell is one of the most efficient methods to diagnose the dominant problem, accurately. In this study, the fill factor analysis method and the double-diode model of a solar cell was applied to analyze the effect of J01, J02, Rs, and Rsh on the fill factor in details. The temperature dependence of the parameters was compared through the passivated emitter rear cell (PERC) of the industrial scale solar cells. As a result of analysis, PERC cells showed different temperature dependence for the fill factor loss of the J01 and J02 as temperatures rose. In addition, we confirmed that fill factor loss from the J01 and J02 at elevated temperature depends on the initial state of the solar cells. The verification of the fill factor loss analysis was conducted by comparing to the fitting results of the injection dependent-carrier lifetime.

scholarly journals ANNEALING OF POLYCRYSTALLINE THIN FILM SILICON SOLAR CELLS IN WATER VAPOUR AT SUB-ATMOSPHERIC PRESSURES

2014 ◽  
Vol 54 (5) ◽  
pp. 341-347
Author(s):  
Peter Pikna ◽  
Vlastimil Píč ◽  
Vítězslav Benda ◽  
Antonín Fejfar
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Water Vapour ◽  
Elevated Temperatures ◽  
Voltage Response ◽  
In Situ Observation ◽  
Polycrystalline Thin Film ◽  
Cell Parameters

Thin film polycrystalline silicon (poly-Si) solar cells were annealed in water vapour at pressures below atmospheric pressure. PN junction of the sample was contacted by measuring probes directly in the pressure chamber filled with steam during passivation. Suns-VOC method and a Lock-in detector were used to monitor an effect of water vapour to VOC of the solar cell during whole passivation process (in-situ). Tested temperature of the sample (55°C – 110°C) was constant during the procedure. Open-circuit voltage of a solar cell at these temperatures is lower than at room temperature. Nevertheless, voltage response of the solar cell to the light flash used during Suns-VOC measurements was good observable. Temperature dependences for multicrystalline wafer-based and polycrystalline thin film solar cells were measured and compared. While no significant improvement of thin film poly-Si solar cell parameters by annealing in water vapour at under-atmospheric pressures was observed up to now, in-situ observation proved required sensitivity to changing VOC at elevated temperatures during the process.

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