scholarly journals Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS2

Materials ◽  
2018 ◽  
Vol 11 (12) ◽  
pp. 2464 ◽  
Author(s):  
Yue Yin ◽  
Fang Ren ◽  
Yunyu Wang ◽  
Zhiqiang Liu ◽  
Jinping Ao ◽  
...  
Keyword(s):  
Thin Film ◽  
Defect Density ◽  
2D Materials ◽  
Van Der Waals ◽  
Single Peak ◽  
Organic Chemical ◽  
High Quality ◽  
Single Crystalline ◽  
Light Emitting ◽  
Deep Ultraviolet

Van der Waals epitaxy (vdWE) has drawn continuous attention, as it is unlimited by lattice-mismatch between epitaxial layers and substrates. Previous reports on the vdWE of III-nitride thin film were mainly based on two-dimensional (2D) materials by plasma pretreatment or pre-doping of other hexagonal materials. However, it is still a huge challenge for single-crystalline thin film on 2D materials without any other extra treatment or interlayer. Here, we grew high-quality single-crystalline AlN thin film on sapphire substrate with an intrinsic WS2 overlayer (WS2/sapphire) by metal-organic chemical vapor deposition, which had surface roughness and defect density similar to that grown on conventional sapphire substrates. Moreover, an AlGaN-based deep ultraviolet light emitting diode structure on WS2/sapphire was demonstrated. The electroluminescence (EL) performance exhibited strong emissions with a single peak at 283 nm. The wavelength of the single peak only showed a faint peak-position shift with increasing current to 80 mA, which further indicated the high quality and low stress of the AlN thin film. This work provides a promising solution for further deep-ultraviolet (DUV) light emitting electrodes (LEDs) development on 2D materials, as well as other unconventional substrates.

scholarly journals Van der Waals epitaxy of nearly single-crystalline nitride films on amorphous graphene-glass wafer

2021 ◽  
Vol 7 (31) ◽  
pp. eabf5011
Author(s):  
Fang Ren ◽  
Bingyao Liu ◽  
Zhaolong Chen ◽  
Yue Yin ◽  
Jingyu Sun ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Internal Quantum Efficiency ◽  
Van Der Waals ◽  
Glass Wafer ◽  
High Quality ◽  
Single Crystalline ◽  
Light Emitting ◽  
Glass Substrates ◽  
Amorphous Graphene ◽  
Graphene Glass

Van der Waals epitaxy provides a fertile playground for the monolithic integration of various materials for advanced electronics and optoelectronics. Here, a previously unidentified nanorod-assisted van der Waals epitaxy is developed and nearly single-crystalline GaN films are first grown on amorphous silica glass substrates using a graphene interfacial layer. The epitaxial GaN-based light-emitting diode structures, with a record internal quantum efficiency, can be readily lifted off, becoming large-size flexible devices. Without the effects of the potential field from a single-crystalline substrate, we expect this approach to be equally applicable for high-quality growth of nitrides on arbitrary substrates. Our work provides a revolutionary technology for the growth of high-quality semiconductors, thus enabling the hetero-integration of highly mismatched material systems.

Fabrication of MISFET exhibiting normally-off characteristics using a single-crystalline InGaO3(ZnO)5 thin film

2002 ◽  
Vol 747 ◽  
Author(s):  
K. Nomura ◽  
H. Ohta ◽  
K. Ueda ◽  
T. Kamiya ◽  
M. Hirano ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Defect Density ◽  
Field Effect Transistors ◽  
Solid Phase ◽  
Oxide Semiconductor ◽  
Single Crystalline ◽  
Transparent Oxide ◽  
Improved Performance ◽  
Transparent Oxide Semiconductors

ABSTRACTTransparent metal-insulator-semiconductor field-effect transistors (MISFETs) were fabricated using a single-crystalline thin film of an n-type transparent oxide semiconductor, a homologous compound InGaO3(ZnO)5, grown by a reactive solid phase epitaxy method. The transparent MISFET exhibited good performances with “normally-off characteristics”, “an on/off current ratio as large as 105” and “insensitivity to visible light”. Field-effect mobility was about 2 cm2(Vs)-1, which is larger than those reported previously for MISFETs fabricated in transparent oxide semiconductors. These improved performance is thought to result from the low defect density and intrinsic-level carrier concentration of the single-crystalline InGaO3(ZnO)5 film.

Electro-Optic and Magneto-Optic Photonic Bandgap Materials Kevin

2004 ◽  
Vol 834 ◽  
Author(s):  
Y. Zou ◽  
Yanyun Wang ◽  
Kewen Li ◽  
Hua Jiang ◽  
Samir K. Mondal ◽  
...  
Keyword(s):  
Thin Film ◽  
Semiconductor Device ◽  
Photonic Bandgap ◽  
Organic Chemical ◽  
High Quality ◽  
Glass Substrates ◽  
Photonic Bandgap Materials ◽  
Electro Optic ◽  
Iron Garnet ◽  
Magneto Optic

ABSTRACTThis work presents a study of electro-optic and magneto-optic films made by a Metal-Organic Chemical Liquid Deposition (MOCLD) method. Electro-optic thin film, La-modified Pb(Mg1/3Nb2/3)O3-PbTiO3 (PLMNT) and magneto-optic thin film, rare earth doped yittrium iron garnet (YIG) have been grown at different conditions. Low temperature growth on buffered semiconductor substrates has been studied for semiconductor device integration. High quality PLMNT film with EO coefficient of 1x10-16 (m/V)2 was obtained with MOCLD. Doped and undoped YIG onto MgO and glass substrates and also onto buffered semiconductors were successfully deposited using MOCLD method. Several of these films had successful rotations that were of device quality. Based on these high quality functional films, two dimensional photonic bandgap waveguide structures were designed and simulated.

Demonstration of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on High-Quality AlN Templates

2010 ◽  
Vol 49 (2) ◽  
pp. 022102 ◽  
Author(s):  
Yusuke Sakai ◽  
Youhua Zhu ◽  
Shigeaki Sumiya ◽  
Makoto Miyoshi ◽  
Mitsuhiro Tanaka ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
High Quality ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

Growth of High Quality Fluorinated Silicon Dioxide for Thin Film Transistors

2002 ◽  
Vol 715 ◽  
Author(s):  
Roger Keen ◽  
Vikram L. Dalal
Keyword(s):  
Thin Film ◽  
Silicon Dioxide ◽  
Thin Film Transistors ◽  
Defect Density ◽  
Low Pressure ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
Oxide Interface ◽  
High Quality ◽  
Interface Defect

AbstractThin film transistors(TFT) in microcrystalline and amorphous Si require high quality gate insulators that can be grown at low temperatures. In this paper, we show that one can oxidize Si wafers to produce high quality fluorinated silicon dioxide gate insulator using a low pressure remote plasma. The insulating film was grown on c-Si substrates using a low pressure ECR oxygen plasma, with small quantities of fluorine added to the mixture. Helium was used as the carrier gas for both oxygen and fluorine. The growth temperatures were in the range of 400–450 C. MOS type capacitors were made to judge the quality of the oxide/semiconductor interface, and interface defect densities were measured using capacitance-voltage techniques. It was found that when no fluorine was present in the oxide, the interface defect density was ∼1-2 x 1011/cm2 eV. The addition of F2 to oxygen immediately reduced the defect density by an order of magnitude, to ∼1.5 x 1010/cm2eV. The addition of more F2 slowly increased the defect density. Thermal cycling measurements showed that the semiconductor/oxide interface is very stable under cycling.

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