scholarly journals Measuring the Electrical and Photonic Properties of Cobalt Oxide-Containing Composite Carbon Fibers

2020 ◽  
Vol 4 (4) ◽  
pp. 156
Author(s):  
Yong X. Gan ◽  
Jeremy B. Gan
Keyword(s):  
Cobalt Oxide ◽  
Carbon Fibers ◽  
Open Circuit Voltage ◽  
Composite Fiber ◽  
Cobalt Acetate ◽  
Glucose Sensing ◽  
Open Circuit ◽  
P Type ◽  
Composite Carbon ◽  
Semiconducting Behavior

In this work, cobalt acetate was incorporated into polyacrylonitrile (PAN) polymer through electrospinning as the cobalt oxide source. After oxidization and pyrolysis, a PAN-derived composite carbon fiber containing cobalt oxide was obtained. Measuring the electrical and photonic properties of the composite fiber under visible light irradiation was performed to evaluate the photoelectric behavior of the composite fiber. The p-type semiconducting behavior of the composite fiber was confirmed by measuring the open circuit voltage of a photochemical fuel cell consisting of the photosensitive electrode made from the composite fiber. The application of the composite fiber for glucose sensing was demonstrated.

Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers

2015 ◽  
Vol 5 (6) ◽  
pp. 1757-1761 ◽  
Author(s):  
Daniel Amkreutz ◽  
William D. Barker ◽  
Sven Kuhnapfel ◽  
Paul Sonntag ◽  
Onno Gabriel ◽  
...  
Keyword(s):  
Solar Cells ◽  
Liquid Phase ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Silicon Solar Cells ◽  
P Type

A p-Type NiO-Based Dye-Sensitized Solar Cell with an Open-Circuit Voltage of 0.35 V

2009 ◽  
Vol 48 (24) ◽  
pp. 4402-4405 ◽  
Author(s):  
Elizabeth A. Gibson ◽  
Amanda L. Smeigh ◽  
Loïc Le Pleux ◽  
Jérôme Fortage ◽  
Gerrit Boschloo ◽  
...  
Keyword(s):  
Solar Cell ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Dye Sensitized Solar Cell ◽  
Dye Sensitized ◽  
P Type

Built-in Potential and Open Circuit Voltage of Heterojunction CuIn1-xGaxSe2 Solar Cells

2005 ◽  
Vol 865 ◽  
Author(s):  
Akimasa Yamada ◽  
Koji Matsubara ◽  
Keiichiro Sakurai ◽  
Shogo Ishizuka ◽  
Hitoshi Tampo Hajime ◽  
...  
Keyword(s):  
Solar Cells ◽  
Conduction Band ◽  
Fermi Energy ◽  
Open Circuit Voltage ◽  
Material Selection ◽  
Open Circuit ◽  
Flat Band ◽  
Band Energy ◽  
Low X ◽  
P Type

AbstractThe reasons why the open circuit voltage (Voc) of high-x CuIn1-xGaxSe2 (CIGS)/ZnO solar cells remain low are discussed. Here it is shown that the Voc ceiling can be interpreted simply on the basis of a model that the valence-band energy (Ev) of CIGS is almost immovable irrespective of x. When the conduction-band energy (Ec) of ZnO is lower than that of high-x CIGS (DEc<0), the built-in potential (Vbi) of a CIGS/ZnO junction is equivalent to the flat-band potential (Vbi) that arises from the separation between the Fermi energies of the two materials. If the Ev (and therefore the Fermi energy) of p-type CIGS is constant with increasing x, the Vbi and Voc that follows the Vbi remain unchanged since the Fermi energy of ZnO is constant. This unchangeable Voc reduces the conversion efficiency of high-x CIGS cells in cooperation with reduced photocurrents due to a larger bandgap. A positive offset, ΔEc>o gives rise to a photoelectrons barrier in the conduction-band that partially cancels Voc, thus the Voc of a low-x CIGS cell is governed by the Ec of CIGS. Based upon this concept, a material selection guideline is given for the windows and transparent electrodes appropriate for high-x CIGS absorbers-based solar cells.

Increase in Open-circuit Voltage and Improved Stability of Organic Solar Cells by Inserting a Molybdenum Trioxide Buffer Layer

2009 ◽  
Vol 1154 ◽  
Author(s):  
Hideyuki Murata ◽  
Yoshiki Kinoshita ◽  
Yoshihiro Kanai ◽  
Toshinori Matsushima ◽  
Yuya Ishii
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Organic Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Type Material ◽  
Type Layer ◽  
Improved Stability ◽  
The Stability ◽  
P Type

AbstractWe report the increase in open-circuit voltage (Voc) by inserting of MoO3 layer on ITO substrate to improve built-in potential of organic solar cells (OSCs). In the OSCs using 5,10,15,20-tetraphenylporphyrine (H2TPP) as a p-type material and C60 as a n-type material, the Voc effectively increased from 0.57 to 0.97 V as increasing MoO3 thickness. The obtained highest Voc (0.97 V) is consistent with the theoretical value estimated from the energy difference between the LUMO (−4.50 eV) of C60 and the HOMO (−5.50 eV) of H2TPP layer. Importantly, the enhancement in the Voc was achieved without affecting the short-circuit current density (Jsc) and the fill-factor (FF). Thus, the power conversion efficiency of the device linearly increased from 1.24% to 1.88%. We also demonstrated that a MoO3 buffer layer enhances the stability of OSCs after photo-irradiation. We have investigated the stability of OSCs using H2TPP and N,N′-di(1-naphthyl)-N,N′-diphenylbenzidine as a p-type layer. The both devices with MoO3 layer showed improved stability. These results clearly suggest that the interface at ITO/p-type layer affects the device stability.

scholarly journals Lindqvist polyoxometalates as electrolytes in p-type dye sensitized solar cells

2019 ◽  
Vol 3 (1) ◽  
pp. 96-100 ◽  
Author(s):  
Tijmen M. A. Bakker ◽  
Simon Mathew ◽  
Joost N. H. Reek
Keyword(s):  
Solar Cells ◽  
Power Conversion Efficiency ◽  
Open Circuit Voltage ◽  
Power Conversion ◽  
Dye Sensitized Solar Cells ◽  
Open Circuit ◽  
Dye Sensitized ◽  
Redox Couples ◽  
P Type ◽  
Sensitized Solar Cells

The development of new redox couples provides a clear strategy to improve power conversion efficiency (PCE) in p-type dye-sensitized solar cells (p-DSSCs) through enabling improvements in open-circuit voltage (VOC).

Enhanced open-circuit voltage in p-type passivated emitter and rear cell by doped polysilicon layer as passivation contact

Solar Energy ◽  
2020 ◽  
Vol 207 ◽  
pp. 436-440
Author(s):  
Yajun Xu ◽  
Honglie Shen ◽  
Zhi Yang ◽  
Qingzhu Wei ◽  
Zhichun Ni ◽  
...  
Keyword(s):  
Open Circuit Voltage ◽  
Open Circuit ◽  
Polysilicon Layer ◽  
P Type

Deposition of P-Type Nanocrystalline Silicon Using High Pressure in a VHF-PECVD Single Chamber System

2011 ◽  
Vol 1321 ◽  
Author(s):  
Xiaodan Zhang ◽  
Guanghong Wang ◽  
Xinxia Zheng ◽  
Shengzhi Xu ◽  
Changchun Wei ◽  
...  
Keyword(s):  
High Pressure ◽  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Nanocrystalline Silicon ◽  
Open Circuit ◽  
Single Chamber ◽  
P Type

ABSTRACTIn this article, we present a study of boron-doped hydrogenated nanocrystalline silicon (nc-Si: H) films by very high frequency-plasma enhanced chemical vapor deposition (VHF-PECVD) using high deposition pressure. Electrical, structural and optical properties of the films were investigated. Dark conductivity as high as 2.75S/cm of p-type nc-Si: H prepared at 2.5Torr pressure has been achieved at a deposition rate of 1.75Å/s for 25nm thin film. By controlling boron and phosphorus contamination, single junction nc-Si: H solar cells incorporated p-layers prepared under high pressure and low pressure, respectively, were deposited. It has been proven that nanocrystalline silicon solar cells with incorporation of p layer prepared at high pressure has resulted in enhanced open circuit voltage, short circuit current density and subsequently high conversion efficiency. Through the optimization of the bottom solar cell and application of ZnO/Al back reflector, 10.59% initial conversion efficiency of micromorph tandem solar cell (1.027cm2) with an open circuit voltage of 1.3864V, has been fabricated, where the bottom solar cell using a high pressure p layer was deposited in a single chamber.

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