scholarly journals Amorphous Silicon Thin Film Deposition for Poly-Si/SiO2 Contact Cells to Minimize Parasitic Absorption in the Near-Infrared Region

Energies ◽  
2021 ◽  
Vol 14 (24) ◽  
pp. 8199
Author(s):  
Changhyun Lee ◽  
Jiyeon Hyun ◽  
Jiyeon Nam ◽  
Seok-Hyun Jeong ◽  
Hoyoung Song ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Near Infrared ◽  
Infrared Region ◽  
Film Deposition ◽  
Solar Cell Performance ◽  
Tandem Solar Cells ◽  
Bottom Cell ◽  
Near Infrared Region

Tunnel oxide passivated contact (TOPCon) solar cells are key emerging devices in the commercial silicon-solar-cell sector. It is essential to have a suitable bottom cell in perovskite/silicon tandem solar cells for commercial use, given that good candidates boost efficiency through increased voltage. This is due to low recombination loss through the use of polysilicon and tunneling oxides. Here, a thin amorphous silicon layer is proposed to reduce parasitic absorption in the near-infrared region (NIR) in TOPCon solar cells, when used as the bottom cell of a tandem solar-cell system. Lifetime measurements and optical microscopy (OM) revealed that modifying both the timing and temperature of the annealing step to crystalize amorphous silicon to polysilicon can improve solar cell performance. For tandem cell applications, absorption in the NIR was compared using a semitransparent perovskite cell as a filter. Taken together, we confirmed the positive results of thin poly-Si, and expect that this will improve the application of perovskite/silicon tandem solar cells.

scholarly journals Material and solar cell research in high efficiency micromorph tandem solar cell

2015 ◽  
Vol 37 ◽  
pp. 434 ◽  
Author(s):  
Razagh Hafezi ◽  
Soroush Karimi ◽  
Sharie Jamalzae ◽  
Masoud Jabbari
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
High Efficiency ◽  
Crystalline Silicon ◽  
Chemical Vapour ◽  
Microcrystalline Silicon ◽  
Tandem Solar Cells ◽  
Bottom Cell

“Micromorph” tandem solar cells consisting of a microcrystalline silicon bottom cell and an amorphous silicon top cell are considered as one of the most promising new thin-film silicon solar-cell concepts. Their promise lies in the hope of simultaneously achieving high conversion efficiencies at relatively low manufacturing costs. The concept was introduced by IMT Neuchâtel, based on the VHF-GD (very high frequency glow discharge) deposition method. The key element of the micromorph cell is the hydrogenated microcrystalline silicon bottom cell that opens new perspectives for low-temperature thin-film crystalline silicon technology. This paper describes the use, within p–i–n- and n–i–p-type solar cells, of hydrogenated amorphous silicon (a-Si:H) and hydrogenated microcrystalline silicon (_c-Si:H) thin films (layers), both deposited at low temperatures (200_C) by plasma-assisted chemical vapour deposition (PECVD), from a mixture of silane and hydrogen. Optical and electrical properties of the i-layers are described. Finally, present performances and future perspectives for a high efficiency ‘micromorph’ (mc-Si:Hya-Si:H) tandem solar cells are discussed.

Annealing Kinetics of Amorphous Silicon Alloy Solar Cells Made at Various Deposition Rates

2001 ◽  
Vol 664 ◽  
Author(s):  
Baojie Yana ◽  
Jeffrey Yanga ◽  
Kenneth Lord ◽  
Subhendu Guha
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
High Frequency ◽  
Room Temperature ◽  
Defect Density ◽  
Very High Frequency ◽  
Solar Cell Performance ◽  
Kinetics Of ◽  
Very High

ABSTRACTA systematic study has been made of the annealing kinetics of amorphous silicon (a-Si) alloy solar cells. The cells were deposited at various rates using H2 dilution with radio frequency (RF) and modified very high frequency (MVHF) glow discharge. In order to minimize the effect of annealing during light soaking, the solar cells were degraded under 30 suns at room temperature to quickly reach their saturated states. The samples were then annealed at an elevated temperature. The J-V characteristics were recorded as a function of annealing time. The correlation of solar cell performance and defect density in the intrinsic layer was obtained by computer simulation. Finally, the annealing activation energy distribution (Ea) was deduced by fitting the experimental data to a theoretical model. The results show that the RF low rate solar cell with high H2 dilution has the lowest Ea and the narrowest distribution, while the RF cell with no H2 dilution has the highest Ea and the broadest distribution. The MVHF cell made at 8Å/s withhigh H2 dilution shows a lower Ea and a narrower distribution than the RF cell made at 3 Å/s, despite the higher rate. We conclude that different annealing kinetics plays an important role in determining the stabilized performance of a-Si alloy solar cells.

Polymer solar cells based on very narrow-bandgap polyplatinynes with photocurrents extended into the near-infrared region

2008 ◽  
pp. 5484 ◽  
Author(s):  
Xing-Zhu Wang ◽  
Wai-Yeung Wong ◽  
Kai-Yin Cheung ◽  
Man-Kin Fung ◽  
Aleksandra B. Djurišić ◽  
...  
Keyword(s):  
Solar Cells ◽  
Near Infrared ◽  
Polymer Solar Cells ◽  
Infrared Region ◽  
Narrow Bandgap ◽  
Near Infrared Region

Amorphous Silicon Alloy Materials and Solar Cells Near the Threshold of Microcrystallinity

1999 ◽  
Vol 557 ◽  
Author(s):  
J. Yang ◽  
S. Guha
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Triple Junction ◽  
High Efficiency ◽  
Spectral Response ◽  
High Quality ◽  
Silicon Alloys ◽  
Solar Cell Performance ◽  
Hydrogen Dilution

AbstractOne of the most effective techniques used to obtain high quality amorphous silicon alloys is the use of hydrogen dilution during film growth. The resultant material exhibits a more ordered microstructure and gives rise to high efficiency solar cells. As the hydrogen dilution increases, however, a threshold is reached, beyond which microcrystallites begin to form rapidly. In this paper, we review some of the interesting features associated with the thin film materials obtained from various hydrogen dilutions. They include the observation of linear-like objects in the TEM micrograph, a shift of the principal Si TO band in the Raman spectrum, a sharp, low temperature peak in the H2 evolution spectrum, a shift of the wagging mode in the IR spectrum, and a narrowing of the Si (111) peak in the X-ray diffraction pattern. These spectroscopic tools have allowed us to optimize deposition conditions to near the threshold of microcrystallinity and obtain desired high quality materials. Incorporation of the improved materials into device configuration has significantly enhanced the solar cell performance. Using a spectral-splitting, triple-junction configuration, the spectral response of a typical high efficiency device spans from below 350 nm to beyond 950 nm with a peak quantum efficiency exceeding 90%; the triple stack generates a photocurrent of 27 mA/cm2. This paper describes the effect of the improved materials on various solar cell structures, including a 13% active-area, stable triple-junction device.

Amorphous Silicon Solar Cell Techniques for High Temperature and/or Reactive Deposition Conditions

1999 ◽  
Vol 557 ◽  
Author(s):  
M. Kanbe ◽  
T. Komaru ◽  
K. Fukutani ◽  
T. Kamiya ◽  
C.M. Fortmann ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Silicon Solar Cell ◽  
Hydrogen Diffusion ◽  
Hydrogen Reduction ◽  
Poor Performance ◽  
N Deposition ◽  
Solar Cell Performance ◽  
Amorphous Silicon Solar Cell

AbstractSeveral promising new methods for amorphous silicon solar cell preparation involve high substrate temperatures and/or very reactive atmospheres. When incorporated into solar cells, the performance of these layers has often been less than expected due to enhanced diffusion and/or chemical reactions. This poor performance results from the harsh deposition environments. Deleterious effects include darken of TCO coated glass substrates due to hydrogen diffusion to and hydrogen reduction at the TCO interface when solar cells are prepared in the p-i-n deposition sequence. Alternatively, the deposition of TCO layers onto amorphous layers also involves rather harsh oxidizing conditions that have a deleterious effect on the top most amorphous silicon-based p-layers. Strategic use of blocking layers results in remarkably improved solar cell performance. A thin Cr layer (probably becoming Cr2O3) shows ability to improve the performance of both n-ip and p-i-n solar cells by inhibiting both O and H diffusion.

Amorphous Silicon Films from Dichlorosilane and SiH4 for Solar Cells

1996 ◽  
Vol 420 ◽  
Author(s):  
A. M. Payne ◽  
S. Wagner
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Transport Properties ◽  
Electronic Transport ◽  
Silicon Films ◽  
Cell Performance ◽  
Solar Cell Performance ◽  
Electronic Transport Properties ◽  
Standard Cells

AbstractWe have deposited amorphous silicon films from mixtures of dichlorosilane (SiH2C12, DCS), and silane (SiH4) and made the first p-i-n solar cells using i-layers of this material. We measured optical and electronic transport properties of the DCS-derived films and relate them to the solar cell performance. The DCS cells are compared to standard cells made with SilH4.

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