scholarly journals Experimental Evidence of PID Effect on CIGS Photovoltaic Modules

Energies ◽  
2020 ◽  
Vol 13 (3) ◽  
pp. 537 ◽  
Author(s):  
Sofiane Boulhidja ◽  
Adel Mellit ◽  
Sebastian Voswinckel ◽  
Vanni Lughi ◽  
Alessandro Ciocia ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Stress Test ◽  
Standard Test ◽  
Negative Potential ◽  
Leakage Currents ◽  
Copper Indium ◽  
Current Voltage ◽  
Positive Voltage ◽  
Pv Modules ◽  
Power Point

As well known, potential induced degradation (PID) strongly decreases the performance of photovoltaic (PV) strings made of several crystalline silicon modules in hot and wet climates. In this paper, PID tests have been performed on commercial copper indium gallium selenide (CIGS) modules to investigate if this degradation may be remarkable also for CIGS technology. The tests have been conducted inside an environmental chamber where the temperature has been set to 85 °C and the relative humidity to 85%. A negative potential of 1000 V has been applied to the PV modules in different configurations. The results demonstrate that there is a degradation affecting the maximum power point and the fill factor of the current-voltage (I-V) curves. In fact, the measurement of the I-V curves at standard test condition show that all the parameters of the PV modules are influenced. This reveals that CIGS modules suffer PID under high negative voltage: this degradation occurs by different mechanisms, such as shunting, observed only in electroluminescence images of modules tested with negative bias. After the stress test, PID is partially recovered by applying a positive voltage of 1000 V and measuring the performance recovery of the degraded modules. The leakage currents flowing during the PID test in the chamber are measured with both positive and negative voltages; this analysis indicates a correlation between leakage current and power losses in case of negative potential.

scholarly journals Mathematical Method for Parameters Calculation of electric Characteristic of Photovoltaic Module

2018 ◽  
Vol 3 (4) ◽  
pp. 190-200
Author(s):  
B. Benabdelkrim ◽  
A. Benatillah
Keyword(s):  
Standard Test ◽  
Photovoltaic Module ◽  
Unknown Parameters ◽  
Efficient Manner ◽  
Electric Characteristic ◽  
Precise Knowledge ◽  
Current Voltage ◽  
Pv Modules ◽  
Numerical Approaches ◽  
Parameters Calculation

The study of photovoltaic systems (PV) in an efficient manner requires a precise knowledge of the I-V characteristic curves of PV modules. An accurate current-voltage (I-V) model of PV modules is inherently implicit and non-linear and calls for iterative computations to obtain an analytical expression of current as a function of voltage. In this paper, numerical approaches are proposed to forecast the PV modules performance for engineering applications. The proposed approaches were implemented in a Matlab script and the results have been compared with the datasheet values provided by manufacturers in standard test conditions (STC). These approaches permit to extract the unknown parameters and also allow quantifying the effects of module temperature and irradiance on key cells parameters. In this work, a comparative study of the performance characteristics for different modules thin films and solid is analyzed by a single-diode equivalent circuit using four- and five-parameter models and two diode model.

scholarly journals Modeling of Photovoltaic Module Using the MATLAB

2019 ◽  
Vol 9 ◽  
pp. 59-69
Author(s):  
Alok Dhaundiyal ◽  
Divine Atsu
Keyword(s):  
Standard Test ◽  
Electrical Performance ◽  
Photovoltaic Module ◽  
Solar Pv ◽  
Pv Module ◽  
Proposed Model ◽  
Current Voltage ◽  
Pv Modules ◽  
The Impact ◽  
The Mathematical Model

This paper presents the modeling and simulation of the characteristics and electrical performance of photovoltaic (PV) solar modules. Genetic coding is applied to obtain the optimized values of parameters within the constraint limit using the software MATLAB. A single diode model is proposed, considering the series and shunt resistances, to study the impact of solar irradiance and temperature on the power-voltage (P-V) and current-voltage (I-V) characteristics and predict the output of solar PV modules. The validation of the model under the standard test conditions (STC) and different values of temperature and insolation is performed, as well as an evaluation using experimentally obtained data from outdoor operating PV modules. The obtained results are also subjected to comply with the manufacturer’s data to ensure that the proposed model does not violate the prescribed tolerance range. The range of variation in current and voltage lies in the domain of 8.21 – 8.5 A and 22 – 23 V, respectively; while the predicted solutions for current and voltage vary from 8.28 – 8.68 A and 23.79 – 24.44 V, respectively. The measured experimental power of the PV module estimated to be 148 – 152 W is predicted from the mathematical model and the obtained values of simulated solution are in the domain of 149 – 157 W. The proposed scheme was found to be very effective at determining the influence of input factors on the modules, which is difficult to determine through experimental means.

scholarly journals Variable Parameters for a Single Exponential Model of Photovoltaic Modules in Crystalline-Silicon

Energies ◽  
2018 ◽  
Vol 11 (8) ◽  
pp. 2138 ◽  
Author(s):  
Ali Murtaza ◽  
Umer Munir ◽  
Marcello Chiaberge ◽  
Paolo Di Leo ◽  
Filippo Spertino
Keyword(s):  
Crystalline Silicon ◽  
Weather Condition ◽  
Computation Time ◽  
Weather Conditions ◽  
Iterative Solution ◽  
Exponential Model ◽  
Standard Test ◽  
Photovoltaic Module ◽  
Proposed Model ◽  
Power Point

The correct approximation of parallel resistance (Rp) and series resistance (Rs) poses a major challenge for the single diode model of the photovoltaic module (PV). The bottleneck behind the limited accuracy of the model is the static estimation of resistive parameters. This means that Rp and Rs, once estimated, usually remain constant for the entire operating range of the same weather condition, as well as for other conditions. Another contributing factor is the availability of only standard test condition (STC) data in the manufacturer’s datasheet. This paper proposes a single-diode model with dynamic relations of Rp and Rs. The relations not only vary the resistive parameters for constant/distinct weather conditions but also provide a non-iterative solution. Initially, appropriate software is used to extract the data of current-voltage (I-V) curves from the manufacturer’s datasheet. By using these raw data and simple statistical concepts, the relations for Rp and Rs are designed. Finally, it is proved through root mean square error (RMSE) analysis that the proposed model holds a one-tenth advantage over numerous recently proposed models. Simultaneously, it is low complex, iteration-free (0 to voltage in maximum power point Vmpp range), and requires less computation time to trace the I-V curve.

Detection of shading effect by using the current and voltage at maximum power point of crystalline silicon PV modules

Solar Energy ◽  
2020 ◽  
Vol 211 ◽  
pp. 1365-1372
Author(s):  
Manit Seapan ◽  
Yoshihiro Hishikawa ◽  
Masahiro Yoshita ◽  
Keiichi Okajima
Keyword(s):  
Crystalline Silicon ◽  
Maximum Power ◽  
Maximum Power Point ◽  
Shading Effect ◽  
Pv Modules ◽  
Power Point

scholarly journals Investigation on Potential-Induced Degradation in a 50 MWp Crystalline Silicon Photovoltaic Power Plant

2018 ◽  
Vol 2018 ◽  
pp. 1-7 ◽  
Author(s):  
Jingsheng Huang ◽  
Hongtao Li ◽  
Yaojie Sun ◽  
He Wang ◽  
Hong Yang
Keyword(s):  
Power Plant ◽  
Crystalline Silicon ◽  
Standard Test ◽  
Photovoltaic Power ◽  
Positive Voltage ◽  
Degradation Pattern ◽  
Performance Deterioration ◽  
One Year ◽  
P Type ◽  
First Time

The regular performance deterioration of P-type crystalline silicon solar modules and module strings caused by potential-induced degradation in a photovoltaic power plant was found in the field. The PID-affected solar modules dismounted from the photovoltaic power plant were further investigated systematically in the laboratory. For the first time, we found that the neutral point of voltage in a module string moved forward to the positive pole for a PID-affected module string as time goes on. Even if low positive voltage is applied to a PID-prone module, it could cause PID. The thermographic and electroluminescence (EL) images of a PID-affected module string also exhibit a regular degradation pattern. This is in good agreement with the measured power loss of the dismounted solar modules under standard test conditions. The results obtained in this paper show that the maximum power degradation rate of solar modules was as high as 53.26% after only one year of operation because of PID in the field. Due to the vast amount of solar modules and incomplete recovery, this is a terrible catastrophe for the owner of a power plant and module producer.

scholarly journals Extracting Four Solar Model Electrical Parameters of Mono-Crystalline Silicon (mc-Si) and Thin Film (CIGS) Solar Modules using Different Methods

2021 ◽  
Vol 27 (4) ◽  
pp. 16-32
Author(s):  
Narjes Sadeq Katee ◽  
Oday Ibraheem Abdullah ◽  
Emad Talib Hashim
Keyword(s):  
Crystalline Silicon ◽  
Meteorological Condition ◽  
Monocrystalline Silicon ◽  
Photovoltaic Modules ◽  
Slope Method ◽  
Copper Indium ◽  
Current Voltage ◽  
Indium Gallium ◽  
Similar Kind ◽  
Copper Indium Gallium

Experimental measurements were done for characterizing current-voltage and power-voltage of two types of photovoltaic (PV) solar modules; monocrystalline silicon (mc-Si) and copper indium gallium di-selenide (CIGS). The conversion efficiency depends on many factors, such as irradiation and temperature. The assembling measures as a rule cause contrast in electrical boundaries, even in cells of a similar kind. Additionally, if the misfortunes because of cell associations in a module are considered, it is hard to track down two indistinguishable photovoltaic modules. This way, just the I-V, and P-V bends' trial estimation permit knowing the electrical boundaries of a photovoltaic gadget with accuracy. This measure gives extremely significant data to the plan, establishment, and upkeep of PV frameworks. Three methods, simplified explicit, slope, and iterative, are used to compute two solar models' parameters using MATLAB code. The percentage maximum power errors at (600 and 1000) W/m2 for both current-voltage and power-voltage values with the corresponding measured ones using the slope method are 0.5% and 3% for monocrystalline silicon copper indium gallium di-selenide, respectively. The iterative method is 5 % and 10% for monocrystalline silicon and copper indium gallium di-selenide. Finally, for the simplified explicit 8% and 9%, for monocrystalline silicon and copper indium gallium di-selenide, respectively. The slope method gives more close results with the corresponding measured values than the other two methods for the two PV solar modules used. Consequently, the slope method is less influenced by the meteorological condition.

scholarly journals Study on Mitigation Method of Solder Corrosion for Crystalline Silicon Photovoltaic Modules

2014 ◽  
Vol 2014 ◽  
pp. 1-9 ◽  
Author(s):  
Ju-Hee Kim ◽  
Jongsung Park ◽  
Donghwan Kim ◽  
Nochang Park
Keyword(s):  
Crystalline Silicon ◽  
Corrosion Mechanism ◽  
Photovoltaic Modules ◽  
Pv Module ◽  
Oxidation Reduction ◽  
Voltage Mapping ◽  
Current Voltage ◽  
Pv Modules ◽  
Mapping Analysis ◽  
In Series

The corrosion of 62Sn36Pb2Ag solder connections poses serious difficulties for outdoor-exposed photovoltaic (PV) modules, as connection degradation contributes to the increase in series resistance (RS) of PV modules. In this study, we investigated a corrosion mitigation method based on the corrosion mechanism. The effect of added sacrificial metal on the reliability of PV modules was evaluated using the oxidation-reduction (redox) reaction under damp heat (DH) conditions. Experimental results after exposure to DH show that the main reason for the decrease in power was a drop in the module’s fill factor. This drop was attributed to the increase ofRS. The drop in output power of the PV module without added sacrificial metal is greater than that of the sample with sacrificial metal. Electroluminescence and current-voltage mapping analysis also show that the PV module with sacrificial metal experienced less degradation than the sample without sacrificial metal.

scholarly journals In-field monitoring of eight photovoltaic plants: degradation rate along seven years of continuous operation

ACTA IMEKO ◽  
2019 ◽  
Vol 7 (4) ◽  
pp. 75 ◽  
Author(s):  
Alessio Carullo ◽  
Antonella Castellana ◽  
Alberto Vallan ◽  
Alessandro Ciocia ◽  
Filippo Spertino
Keyword(s):  
Thin Film ◽  
Degradation Rate ◽  
Crystalline Silicon ◽  
Electrical Characterization ◽  
Cigs Thin Film ◽  
Copper Indium ◽  
Degradation Rates ◽  
Pv Modules ◽  
Photovoltaic Plants ◽  
Silicon Based

<p class="Abstract">The results of more than seven years (October 2010-December 2017) of continuous monitoring are presented in this paper. Eight outdoor photovoltaic (PV) plants were monitored. The monitored plants use different technologies: mono-crystalline silicon (m-Si), poli-crystalline silicon (p-Si), string ribbon silicon, copper indium gallium selenide (CIGS), thin film, and cadmium telluride (CdTe) thin film. The thin-film and m-Si modules are used both in fixed installations and on x-y tracking systems. The results are expressed in terms of the degradation rate of the efficiency of each PV plant, which is estimated using the measurements provided by a multi-channel data acquisition system that senses both electrical and environmental quantities. A comparison with the electrical characterization of each plant obtained by means of the transient charge of a capacitive load is also made. In addition, three of the monitored plants are characterized at module level, and the estimated degradation rates are compared to the values obtained with the monitoring system. The main outcome of this work can be summarized as the higher degradation rate of thin-film based PV modules with respect to silicon-based PV modules.</p>

PV Modules Deterioration with Less than 15 Years Installation in Thailand

2014 ◽  
Vol 931-932 ◽  
pp. 1068-1072
Author(s):  
Buntoon Wiengmoon ◽  
Krissanapong Kirtikara ◽  
Chaya Jivacate ◽  
Dhirayut Chenvidhya
Keyword(s):  
Power Output ◽  
Visual Inspection ◽  
Crystalline Silicon ◽  
Standard Test ◽  
Single Crystalline Silicon ◽  
Battery Charging ◽  
Solar Water ◽  
Water Pumping ◽  
Pv Modules ◽  
Charging Stations

This paper presents the investigation on deterioration of PV modules installed in Thailand. The modules under this study were dismantled and collected from KMUTT installation in the Buriram province. Modules were same model of modules that were installed over a thousand of solar water pumping systems and battery charging stations by Green E-san project since end of the 1980's and in earlier of 1990's. There are 35 modules, single crystalline silicon sized 47 Wp, in this study that were exposed in the field with less than 15 years. The experiments consist of visual inspection and measurement of performance at standard test condition (STC 1000 W/m2, 25 °C AM1.5) according to IEC61215:2005 standard. It is found that physical deteriorations and power output degradations. The physical deteriorations in this study can be classified delamination on middle cell, delamination on bus bar, delamination of edge cell and discoloration. For power output degradation, there is no module that was degraded less than 20% of nameplate wattage. There are only 8 of 35 modules (~23%) having power output over 50% of power rating.

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