scholarly journals Suppression of Switching Crosstalk and Voltage Oscillations in a SiC MOSFET Based Half-Bridge Converter

Energies ◽  
2018 ◽  
Vol 11 (11) ◽  
pp. 3111 ◽  
Author(s):  
Haider Zaman ◽  
Xiaohua Wu ◽  
Xiancheng Zheng ◽  
Shahbaz Khan ◽  
Husan Ali
Keyword(s):  
High Frequency ◽  
Switching Frequency ◽  
Operating Voltage ◽  
High Power Density ◽  
Negative Power ◽  
Switching Losses ◽  
High Switching Frequency ◽  
Simulation And Experiment ◽  
Gate Driver ◽  
Voltage Spike

The silicon carbide (SiC) MOSFET is characterized by high operating voltage, temperature, switching frequency and efficiency which enables a converter to achieve high power density. However, at high switching frequency, the crosstalk phenomenon occurs when the gate voltage spike introduced by high dv/dt and voltage ringing forces false turn-on of SiC MOSFET which causes a crow-bar current thereby increasing switching losses. In order to increase the immunity against the crosstalk phenomenon in a half-bridge configuration, this paper presents a gate driver for SiC MOSFET capable of generating the negative turn-off voltage without using a negative power supply. In addition, the effect of parasitic inductances on the switching response is analyzed and an RC snubber is designed using high-frequency based circuit reduction technique to dampen the switching ringing. The performance of the proposed gate driver and the designed RC snubber is validated using simulation and experiment at the 1 MHz switching frequency. The results show that the proposed gate driver with RC snubber eliminates crosstalk by maintaining any spurious gate spike below the gate threshold voltage.

Research on the High Frequency Realization of High-Power Inverter

2011 ◽  
Vol 383-390 ◽  
pp. 1077-1083
Author(s):  
Run Hua Liu ◽  
Gang Wang
Keyword(s):  
High Power ◽  
High Frequency ◽  
Output Voltage ◽  
Harmonic Distortion ◽  
Soft Switching ◽  
Multilevel Inverter ◽  
Switching Frequency ◽  
Switching Losses ◽  
Simulation And Experiment

The paper presents the inverter method which based on cascade multilevel inverter and MOSFET-assisted soft-switching of IGBT and modulation strategy against the double requirement of high-power inverter and high frequency. The method can effectively improve the output voltage, reduce harmonic distortion and switching losses, improve the switching frequency and meet the double requirement of the high-power inverter and high frequency. The method proved to be feasible by simulation and experiment.

Comparison of Total Losses of 1.2 kV SiC JFET and BJT in DC-DC Converter Including Gate Driver

2011 ◽  
Vol 679-680 ◽  
pp. 649-652 ◽  
Author(s):  
Jang Kwon Lim ◽  
Georg Tolstoy ◽  
Dimosthenis Peftitsis ◽  
Jacek Rabkowski ◽  
Mietek Bakowski ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Surface Recombination ◽  
Current Gain ◽  
Surface Recombination Velocity ◽  
Switching Frequency ◽  
Switching Losses ◽  
Insulator Interface ◽  
Gate Driver ◽  
Recombination Velocity ◽  
Emitter Junction

The 1.2 kV SiC JFET and BJT devices have been investigated and compared with respect to total losses including the gate driver losses in a DC-DC converter configuration. The buried grid, Normally-on JFET devices with threshold voltage of -50 V and -10V are compared to BJT devices with ideal semiconductor and passivating insulator interface and an interface with surface recombination velocity of 4.5•104 cm/s yielding agreement to the reported experimental current gain values. The conduction losses of both types of devices are independent of the switching frequency while the switching losses are proportional to the switching frequency. The driver losses are proportional to the switching frequency in the JFET case but to a large extent independent of the switching frequency in the BJT case. The passivation of the emitter junction modeled here by surface recombination velocity has a significant impact on conduction losses and gate driver losses in the investigated BJT devices.

High Temperature Silicon-on-Insulator Gate Driver for SiC-FET Power Modules

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000152-000158
Author(s):  
J. Valle Mayorga ◽  
C. Gutshall ◽  
K. Phan ◽  
I. Escorcia ◽  
H. A. Mantooth ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
High Efficiency ◽  
Low Voltage ◽  
Silicon On Insulator ◽  
Switching Frequency ◽  
Cmos Process ◽  
High Power Density ◽  
Power Modules ◽  
Gate Driver

SiC power semiconductors have the capability of greatly outperforming Si-based power devices. Faster switching and smaller on-state losses coupled with higher voltage blocking and temperature capabilities, make SiC a very attractive semiconductor for high performance, high power density power modules. However, the temperature capabilities and increased power density are fully utilized only when the gate driver is placed next to the SiC devices. This requires the gate driver to successfully operate under these extreme conditions with reduced or no heat sinking requirements, allowing the full realization of a high efficiency, high power density SiC power module. In addition, since SiC devices are usually connected in a half or full bridge configuration, the gate driver should provide electrical isolation between the high and low voltage sections of the driver itself. This paper presents a 225 degrees Celsius operable, Silicon-On-Insulator (SOI) high voltage isolated gate driver IC for SiC devices. The IC was designed and fabricated in a 1 μm, partially depleted, CMOS process. The presented gate driver consists of a primary and a secondary side which are electrically isolated by the use of a transformer. The gate driver IC has been tested at a switching frequency of 200 kHz at 225 degrees Celsius while exhibiting a dv/dt noise immunity of at least 45 kV/μs.

scholarly journals A Fractional-Order Element (FOE)-Based Approach to Wireless Power Transmission for Frequency Reduction and Output Power Quality Improvement

Electronics ◽  
2019 ◽  
Vol 8 (9) ◽  
pp. 1029 ◽  
Author(s):  
Guidong Zhang ◽  
Zuhong Ou ◽  
Lili Qu
Keyword(s):  
Fractional Order ◽  
High Frequency ◽  
Power Efficiency ◽  
Power Transmission ◽  
Switching Frequency ◽  
Wireless Power ◽  
Wireless Power Transmission ◽  
High Switching Frequency ◽  
Power Quality Improvement ◽  
Power Inductors

A wireless power transmission (WPT) requires high switching frequency to achieve energy transmission; however, existing switching devices cannot satisfy the requirements of high-frequency switching, and the efficiency of current WPT is too low. Compared with the traditional power inductors and capacitors, fractional-order elements (FOEs) in WPT can realize necessary functions though requiring a lower switching frequency, which leads to a more favorable high-frequency switching performance with a higher efficiency. In this study, a generalized fractional-order WPT (FO-WPT) is established, followed by a comprehensive analysis on its WPT performance and power efficiency. Through extensive simulations of typical FO wireless power domino-resonators (FO-WPDRS), the functionality of the proposed FO-WPT for medium and long-range WPT is demonstrated. The numerical results show that the proposed FOE-based WPT solution has a higher power efficiency and lower switching frequency than conventional methods.

Designing of Improved Series Resonant Inverter with FPGA Controller for Heating Applications

2020 ◽  
pp. 2150088
Author(s):  
S. Dhayanandh ◽  
S. Manoharan
Keyword(s):  
High Frequency ◽  
Switching Frequency ◽  
Zero Voltage Switching ◽  
Resonant Inverter ◽  
Series Resonance ◽  
High Switching Frequency ◽  
Series Resonant ◽  
Higher Power ◽  
Series Resonant Inverter ◽  
And Control

Intensive utilization of Induction Heating (IH) innovations can be seen in numerous areas such as manufacturing industries, domestic or house hold and medicinal applications. The development of high switching frequency switches has encouraged the structure of high frequency inverters which are the key component of IH technology. Controlling the power output in a high frequency inverter for IH application is relatively complicated. This paper focuses on designing and developing a typical series resonance inverter and control it by FPGA-based controller. A MOSFET switch-based DC to AC converter is designed and Zero Voltage Switching (ZVS)-based switching strategy is accomplished to acquire less stress on switching devices and greater conversion efficiency. In this technique, secondary switched capacitor cell was proposed for resonant inverter of high frequency. To optimize the performance of the proposed inverter, the FPGA-based control system is implemented. Higher power density is the greatest advantage of this topology. The experimental and simulation model of the proposed series resonant inverter (SRI) for heating applications is developed and simulated using MATLAB/Simulink software.

scholarly journals Monolithic Integrated High Frequency GaN DC-DC Buck Converters with High Power Density Controlled by Current Mode Logic Level Signal

Electronics ◽  
2020 ◽  
Vol 9 (9) ◽  
pp. 1540
Author(s):  
Longkun Lai ◽  
Ronghua Zhang ◽  
Kui Cheng ◽  
Zhiying Xia ◽  
Chun Wei ◽  
...  
Keyword(s):  
Power Density ◽  
Current Mode ◽  
Buck Converter ◽  
Switching Frequency ◽  
High Power Density ◽  
Current Mode Logic ◽  
Power Stage ◽  
Amplifier Stage ◽  
Gate Driver ◽  
Logic Level

Integration is a key way to improve the switching frequency and power density for a DC-DC converter. A monolithic integrated GaN based DC-DC buck converter is realized by using a gate driver and a half-bridge power stage. The gate driver is composed of three stages (amplitude amplifier stage, level shifting stage and resistive-load amplifier stage) to amplify and modulate the driver control signal, i.e., CML (current mode logic) level of which the swing is from 1.1 to 1.8 V meaning that there is no need for an additional buffer or preamplifier for the control signal. The gate driver can provide sufficient driving capability for the power stage and improve the power density efficiently. The proposed GaN based DC-DC buck converter is implemented in the 0.25 μm depletion mode GaN-on-SiC process with a chip area of 1.7 mm × 1.3 mm, which is capable of operating at high switching frequency up to 200 MHz and possesses high power density up to 1 W/mm2 at 15 V output voltage. To the authors’ knowledge, this is the highest power density for GaN based DC-DC converter at the hundreds of megahertz range.

scholarly journals Analysis of Intrinsic Switching Losses in Superjunction MOSFETs Under Zero Voltage Switching

Energies ◽  
2020 ◽  
Vol 13 (5) ◽  
pp. 1124
Author(s):  
Maria Rogina ◽  
Alberto Rodriguez ◽  
Diego G. Lamar ◽  
Jaume Roig ◽  
German Gomez ◽  
...  
Keyword(s):  
Simulation Models ◽  
Soft Switching ◽  
Energy Losses ◽  
Switching Frequency ◽  
Zero Voltage Switching ◽  
Power Transistors ◽  
Switching Losses ◽  
Light Load ◽  
High Switching Frequency ◽  
Output Capacitance

Switching losses of power transistors usually are the most relevant energy losses in high-frequency power converters. Soft-switching techniques allow a reduction of these losses, but even under soft-switching conditions, these losses can be significant, especially at light load and very high switching frequency. In this paper, hysteresis and energy losses are shown during the charge and discharge of the output capacitance (COSS) of commercial high voltage Superjunction MOSFETs. Moreover, a simple methodology to include information about these two phenomena in datasheets using a commercial system is suggested to manufacturers. Simulation models including COSS hysteresis and a figure of merit considering these intrinsic energy losses are also proposed. Simulation and experimental measurements using an LLC resonant converter have been performed to validate the proposed mechanism and the usefulness of the proposed simulation models.

Comparative Evaluation and Analysis of Gate Driver Impacts on a SiC MOSFET-Gate Driver Integrated Power Module

2017 ◽  
Vol 2017 (1) ◽  
pp. 000247-000251
Author(s):  
Liqi Zhang ◽  
Suxuan Guo ◽  
Pengkun Liu ◽  
Alex Q. Huang
Keyword(s):  
Comparative Evaluation ◽  
Switching Frequency ◽  
Common Source ◽  
Power Module ◽  
Switching Speed ◽  
Switching Performance ◽  
Switching Losses ◽  
Power Modules ◽  
Gate Driver ◽  
The Common

Abstract SiC MOSFET-gate driver integrated power module is proposed to provide ultra-low stray inductance compared to traditional TO-247 or TO-220 packages. Kelvin connection eliminates the common source stray inductance and zero external gate resistor enables faster switching. This module can be operated at MHz switching frequency for high power applications with lower switching losses than discrete packages. Two different gate drivers and two different SiC MOSFETs are grouped and integrated into three integrated power modules. Comparative evaluation and analysis of gate driver impacts on switching speed of SiC MOSFET is shown in detail. The paper provides an insight of the gate driver impacts on the device switching performance in an integrated power module.

Low Switching Energy 1200V Normally-Off SiC VJFET Power Modules

2011 ◽  
Vol 679-680 ◽  
pp. 583-586 ◽  
Author(s):  
David C. Sheridan ◽  
Andrew Ritenour ◽  
Volodymyr Bondarenko ◽  
Jeff B. Casady ◽  
Robin L. Kelley
Keyword(s):  
High Frequency ◽  
High Efficiency ◽  
Bridge Circuit ◽  
Schottky Diodes ◽  
Power Module ◽  
Enhancement Mode ◽  
Switching Losses ◽  
Power Modules ◽  
Standard Module ◽  
Gate Driver

This work presents the progress in developing an all SiC based power module for use in high frequency and high efficiency applications. Using parallel combinations of 1200V enhancement mode SiC VJFETs (36mm2) and Schottky diodes (23mm2), a total on-resistance of only 10mOhm (2.7m-cm2) was achieved at ID=100A in a commercially available standard module configured as a half-bridge circuit. Careful attention to module layout, gate driver design, and the addition of optimized snubbers resulted in excellent switching waveforms with low total switching losses of 1.25mJ when switching 100A at 150oC.

scholarly journals Review and Simulation of Fixed and Adaptive Hysteresis Current Control Considering Switching Losses and High-Frequency Harmonics

2011 ◽  
Vol 2011 ◽  
pp. 1-6 ◽  
Author(s):  
Hani Vahedi ◽  
Abdolreza Sheikholeslami ◽  
Mohammad Tavakoli Bina ◽  
Mahmood Vahedi
Keyword(s):  
Fourier Transform ◽  
High Frequency ◽  
Current Control ◽  
Switching Frequency ◽  
Hysteresis Current Control ◽  
Switching Losses ◽  
Frequency Components ◽  
Source Current ◽  
Harmonic Components ◽  
The Fourier Transform

Hysteresis Current Control (HCC) is widely used due to its simplicity in implementation, fast and accurate response. However, the main issue is its variable switching frequency which leads to extraswitching losses and injecting high-frequency harmonics into the system current. To solve this problem, adaptive hysteresis current control (AHCC) has been introduced which produces hysteresis bandwidth which instantaneously results in smoother and constant switching frequency. In this paper the instantaneous power theory is used to extract the harmonic components of system current. Then fixed-band hysteresis current control is explained. Because of fixed-band variable frequency disadvantages, the adaptive hysteresis current control is explained that leads to fixing the switching frequency and reducing the high-frequency components in source current waveform. Due to these advantages of AHCC, the switching frequency and switching losses will be diminished appropriately. Some simulations are done in MATLAB/Simulink. The Fourier Transform and THD results of source and load currents and the instantaneous switching frequency diagram are discussed to prove the efficiency of this method. The Fourier Transform and THD results of source and load currents are discussed to prove the validity of this method.

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