High performance and reduced charge recombination of CdSe/CdS quantum dot-sensitized solar cells

2012 ◽  
Vol 22 (24) ◽  
pp. 12058 ◽  
Author(s):  
Xiao-Yun Yu ◽  
Bing-Xin Lei ◽  
Dai-Bin Kuang ◽  
Cheng-Yong Su
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Performance ◽  
Charge Recombination ◽  
Cds Quantum Dot ◽  
Sensitized Solar Cells

High performance of TiO2/CdS quantum dot sensitized solar cells with a Cu–ZnS passivation layer

2017 ◽  
Vol 41 (5) ◽  
pp. 1914-1917 ◽  
Author(s):  
Young-Seok Lee ◽  
Chandu V. V. M. Gopi ◽  
Araveeti Eswar Reddy ◽  
Chandu Nagaraju ◽  
Hee-Je Kim
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Performance ◽  
Light Harvesting ◽  
Charge Recombination ◽  
Passivation Layer ◽  
Cds Quantum Dot ◽  
Sensitized Solar Cells

A Cu–ZnS passivation layer effectively suppresses the charge recombination and increases the light harvesting in QDSSCs.

scholarly journals ZnS/SiO2 Passivation Layer for High-Performance of TiO2/CuInS2 Quantum Dot Sensitized Solar Cells

Energies ◽  
2018 ◽  
Vol 11 (8) ◽  
pp. 1931
Author(s):  
Hee-Je Kim ◽  
Jin-Ho Bae ◽  
Hyunwoong Seo ◽  
Masaharu Shiratani ◽  
Chandu Venkata Veera Muralee Gopi
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Performance ◽  
Open Circuit Voltage ◽  
Charge Recombination ◽  
Open Circuit ◽  
Passivation Layer ◽  
Voltage Decay ◽  
Sensitized Solar Cells ◽  
Η Value

Suppressing the charge recombination at the interface of photoanode/electrolyte is the crucial way to improve the quantum dot sensitized solar cells (QDSSCs) performance. In this scenario, ZnS/SiO2 blocking layer was deposited on TiO2/CuInS2 QDs to inhibit the charge recombination at photoanode/electrolyte interface. As a result, the TiO2/CuInS2/ZnS/SiO2 based QDSSCs delivers a power conversion efficiency (η) value of 4.63%, which is much higher than the TiO2/CuInS2 (2.15%) and TiO2/CuInS2/ZnS (3.23%) based QDSSCs. Impedance spectroscopy and open circuit voltage decay analyses indicate that ZnS/SiO2 passivation layer on TiO2/CuInS2 suppress the charge recombination at the interface of photoanode/electrolyte and enhance the electron lifetime.

High-Performance TiO2/ZnO Photoanodes for CdS Quantum Dot-Sensitized Solar Cells

2019 ◽  
Vol 48 (11) ◽  
pp. 7320-7327 ◽  
Author(s):  
Chunyan Zhou ◽  
Huan Wang ◽  
Tianjiao Huang ◽  
Xiaoshan Zhang ◽  
Zhongfeng Shi ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Performance ◽  
Cds Quantum Dot ◽  
Sensitized Solar Cells

High performance CdS quantum-dot-sensitized solar cells with Ti-based ceramic materials as catalysts on the counter electrode

2013 ◽  
Vol 237 ◽  
pp. 141-148 ◽  
Author(s):  
Min-Hsin Yeh ◽  
Lu-Yin Lin ◽  
Chuan-Pei Lee ◽  
Chen-Yu Chou ◽  
Keng-Wei Tsai ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Performance ◽  
Counter Electrode ◽  
Ceramic Materials ◽  
Cds Quantum Dot ◽  
Sensitized Solar Cells

scholarly journals Improved light-harvesting and suppressed charge recombination by introduction of a nanograss-like SnO2 interlayer for efficient CdS quantum dot sensitized solar cells

RSC Advances ◽  
2019 ◽  
Vol 9 (65) ◽  
pp. 38047-38054
Author(s):  
Sangaraju Sambasivam ◽  
Chandu V. V. Muralee Gopi ◽  
Hee-Je Kim ◽  
Ihab M. Obaidat
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Intermediate Layer ◽  
Light Harvesting ◽  
Charge Recombination ◽  
Cds Quantum Dot ◽  
Sensitized Solar Cells

A SnO2 nanograss (NG) intermediate layer in QDSSCs can suppress charge recombination, enhance light-harvesting and improve the efficiency of the device.

scholarly journals ZnS/SiO2 Passivation Layer for High-Performance of TiO2/CuInS2 Quantum Dot Sensitized Solar Cells

2018 ◽  
Author(s):  
Hee-Je Kim ◽  
Jin-Ho Bae ◽  
Hyunwoong Seo ◽  
Masaharu Shiratani ◽  
Chandu Venkata Veera Muralee Gopi
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Performance ◽  
Electrochemical Impedance ◽  
Photovoltaic Performance ◽  
Charge Recombination ◽  
Open Circuit ◽  
Passivation Layer ◽  
Electrolyte Interface ◽  
Sensitized Solar Cells

Suppressing the charge recombination at the interface of photoanode/electrolyte is the crucial way to enhance the photovoltaic performance of quantum dot sensitized solar cells (QDSSCs). In this scenario, ZnS/SiO2 blocking layer was deposited on TiO2/CuInS2 QDs to inhibit the charge recombination at photoanode/electrolyte interface. As a result, the TiO2/CuInS2/ZnS/SiO2 based QDSSCs delivers a power conversion efficiency (η) value of 4.63%, which is significantly higher than the 2.15% and 3.23% observed for QDSSCs with a TiO2/CuInS2 device and TiO2/CuInS2/ZnS, respectively. Electrochemical impedance spectroscopy and open circuit voltage decay analyses indicate that ZnS/SiO2 passivation layer on TiO2/CuInS2 suppress the charge recombination at the photoanode/electrolyte interface and prolongs the electron lifetime.

High efficiency CdS quantum-dot-sensitized solar cells with boron and nitrogen co-doped TiO2 nanofilm as effective photoanode

2015 ◽  
Vol 169 ◽  
pp. 103-108 ◽  
Author(s):  
Ling Li ◽  
Junying Xiao ◽  
Xichuan Yang ◽  
Wenming Zhang ◽  
Huayan Zhang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Efficiency ◽  
Doped Tio2 ◽  
Cds Quantum Dot ◽  
Sensitized Solar Cells ◽  
Co Doped
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