scholarly journals Characterization Circuit, Gate Driver and Fixture for Wide-Bandgap Power Semiconductor Device Testing

Electronics ◽  
2020 ◽  
Vol 9 (5) ◽  
pp. 703
Author(s):  
Osama Saadeh ◽  
Ahmad Al-Hmoud ◽  
Zakariya Dalala
Keyword(s):  
Semiconductor Device ◽  
Operating Temperature ◽  
Energy Systems ◽  
Wide Bandgap ◽  
Renewable Energy Systems ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Power Switches ◽  
Gate Driver ◽  
Reduce Emissions

The world is currently experiencing major advancement in the electrification of both the industrial and commercial sectors. This is part of an effort to reduce reliance on combustible fuels, reduce emissions, integrate renewable energy systems and increase efficiency. Due to the complexity of modern circuits and systems, any circuit’s design should start with proper simulation and device selection, to reduce overall cost and time of prototyping, both of which require accurate and thorough device characterization. Wide bandgap (WBG) power semiconductor devices offer superior characteristics over conventional devices, including faster switching speeds, higher breakdown voltage, lower losses, and higher operating temperature. These properties call for special test circuits and procedures for accurate characterization. In this work, custom characterization circuits and fixtures, suitable for WBG devices are designed, tested, and described. The circuits measure several of the main characteristics of voltage controlled WBG power switches. Different technology devices were tested and characterized.

scholarly journals Recent Advance and Future Progress of GaN Power Semiconductor Devices Used in PV Module Integrated Converters

2018 ◽  
Author(s):  
Oscar Miguel Rodríguez-Benítez ◽  
Mario Ponce Silva ◽  
Leobardo Hernández González ◽  
Juan Antonio Aqui-Tapia ◽  
Abraham Claudio Sánchez ◽  
...  
Keyword(s):  
Renewable Energy ◽  
Semiconductor Devices ◽  
Energy Systems ◽  
Basic Structure ◽  
Superior Performance ◽  
Renewable Energy Systems ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Switching Losses ◽  
New Generation

Power semiconductor devices are essential from the operation point of view, size, efficiency and cost, these components are used in a myriad of applications, providing features that make them an important part of the system in which they are operating. This document analyzes and compares the basic structure, properties, design aspects, as well as temperature performance, stability and switching losses, present in devices on silicon (Si), silicon carbide (SiC) and new generation devices fabricated in gallium nitride (GaN) applied in renewable energy systems. The main objective is determinate the viability of the new generation components, which present a superior performance in view of an increase in efficiency, conductivity, decreases in switching losses, lower resistances and parasitic capacitances as well as higher operating frequency range. Therefore demonstrating the GaN components are a strong and viable candidate to solve some of the problems present in renewable energy systems.

scholarly journals The current status of power semiconductors

2015 ◽  
Vol 28 (2) ◽  
pp. 193-203 ◽  
Author(s):  
Jan Vobecký
Keyword(s):  
Functional Performance ◽  
Wide Bandgap ◽  
Current Status ◽  
Design And Technology ◽  
Power Sector ◽  
Power Semiconductors ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Silicon Devices

Trends in the design and technology of power semiconductor devices are discussed on the threshold of the year 2015. Well established silicon technologies continue to occupy most of applications thanks to the maturity of switches like MOSFET, IGBT, IGCT and PCT. Silicon carbide (SiC) and gallium nitride (GaN) are striving to take over that of the silicon. The most relevant SiC device is the MPS (JBS) diode, followed by MOSFET and JFET. GaN devices are represented by lateral HEMT. While the long term reliability of silicon devices is well trusted, the SiC MOSFETs and GaN HEMTs are struggling to achieve a similar confidence. Two order higher cost of SiC equivalent functional performance at device level limits their application to specific cases, but their number is growing. Next five years will therefore see the co-existence of these technologies. Silicon will continue to occupy most of applications and dominate the high-power sector. The wide bandgap devices will expand mainly in the 600 - 1200 V range and dominate the research regardless of the voltage class.

A Survey of Wide Bandgap Power Semiconductor Devices

2014 ◽  
Vol 29 (5) ◽  
pp. 2155-2163 ◽  
Author(s):  
Jose Millan ◽  
Philippe Godignon ◽  
Xavier Perpina ◽  
Amador Perez-Tomas ◽  
Jose Rebollo
Keyword(s):  
Semiconductor Devices ◽  
Wide Bandgap ◽  
Power Semiconductor ◽  
Power Semiconductor Devices

High-Temperature Characterization and Comparison of 1.2 kV SiC Power Semiconductor Devices

2013 ◽  
Vol 10 (4) ◽  
pp. 138-143 ◽  
Author(s):  
Christina DiMarino ◽  
Zheng Chen ◽  
Dushan Boroyevich ◽  
Rolando Burgos ◽  
Paolo Mattavelli
Keyword(s):  
High Temperature ◽  
Semiconductor Devices ◽  
Wide Bandgap ◽  
Current Gain ◽  
Dynamic Characterization ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Unbiased Manner ◽  
Insight Into

Focused on high-temperature (200°C) operation, this paper seeks to provide insight into state-of-the-art 1.2 kV silicon carbide (SiC) power semiconductor devices; namely the MOSFET, BJT, SJT, and normally-off JFET. This is accomplished by characterizing and comparing the latest generation of these wide bandgap devices from various manufacturers (Cree, GE, ROHM, Fairchild, GeneSiC, and SemiSouth). To carry out this study, the static and dynamic characterization of each device is performed under increasing temperatures (25–200°C). Accordingly, this paper describes the experimental setup used and the different measurements conducted, which include: threshold voltage, current gain, specific on-resistance, and the turn-on and turn-off switching energies of the devices. The driving method used for each device is also detailed. Key trends and observations are reported in an unbiased manner throughout the paper and summarized in the conclusion.

Modeling of Wide Bandgap Power Semiconductor Devices—Part I

2015 ◽  
Vol 62 (2) ◽  
pp. 423-433 ◽  
Author(s):  
Homer Alan Mantooth ◽  
Kang Peng ◽  
Enrico Santi ◽  
Jerry L. Hudgins
Keyword(s):  
Semiconductor Devices ◽  
Wide Bandgap ◽  
Power Semiconductor ◽  
Power Semiconductor Devices
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