scholarly journals Impact of Laser Attacks on the Switching Behavior of RRAM Devices

Electronics ◽  
2020 ◽  
Vol 9 (1) ◽  
pp. 200
Author(s):  
Daniel Arumí ◽  
Salvador Manich ◽  
Álvaro Gómez-Pau ◽  
Rosa Rodríguez-Montañés ◽  
Víctor Montilla ◽  
...  
Keyword(s):  
Embedded Systems ◽  
Random Access ◽  
Switching Behavior ◽  
Electronic Format ◽  
Secret Data ◽  
Promising Alternative ◽  
Private Data ◽  
Secure Embedded Systems ◽  
Iot Devices

The ubiquitous use of critical and private data in electronic format requires reliable and secure embedded systems for IoT devices. In this context, RRAMs (Resistive Random Access Memories) arises as a promising alternative to replace current memory technologies. However, their suitability for this kind of application, where the integrity of the data is crucial, is still under study. Among the different typology of attacks to recover information of secret data, laser attack is one of the most common due to its simplicity. Some preliminary works have already addressed the influence of laser tests on RRAM devices. Nevertheless, the results are not conclusive since different responses have been reported depending on the circuit under testing and the features of the test. In this paper, we have conducted laser tests on individual RRAM devices. For the set of experiments conducted, the devices did not show faulty behaviors. These results contribute to the characterization of RRAMs and, together with the rest of related works, are expected to pave the way for the development of suitable countermeasures against external attacks.

Characterization of Polarization Switching Behavior of Pt/SrBi2Ta2O9/Pt Ferroelectric Capacitors in Ferroelectric Random Access Memory

2002 ◽  
Vol 41 (Part 1, No. 2A) ◽  
pp. 694-697 ◽  
Author(s):  
Young Min Kang ◽  
Choong Heui Chung ◽  
Sang Hyun Oh ◽  
Beelyong Yang ◽  
Seaung Suk Lee ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Polarization Switching ◽  
Switching Behavior ◽  
Access Memory ◽  
Ferroelectric Random Access Memory ◽  
Ferroelectric Capacitors

Bringing Security to The Smallest Embedded Systems

2017 ◽  
Author(s):  
JOSEPH YIU
Keyword(s):  
Internet Of Things ◽  
Embedded Systems ◽  
Low Cost ◽  
Security Requirements ◽  
The Internet ◽  
Security Measures ◽  
Significant Challenge ◽  
Iot Devices

The increasing need for security in microcontrollers Security has long been a significant challenge in microcontroller applications(MCUs). Traditionally, many microcontroller systems did not have strong security measures against remote attacks as most of them are not connected to the Internet, and many microcontrollers are deemed to be cheap and simple. With the growth of IoT (Internet of Things), security in low cost microcontrollers moved toward the spotlight and the security requirements of these IoT devices are now just as critical as high-end systems due to:

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

scholarly journals Experiences on the characterization of parallel applications in embedded systems with Extrae/Paraver

2020 ◽  
Author(s):  
Adrian Munera ◽  
Sara Royuela ◽  
Germán Llort ◽  
Estanislao Mercadal ◽  
Franck Wartel ◽  
...  
Keyword(s):  
Embedded Systems ◽  
Parallel Applications

scholarly journals Isolation and Characterization of Salmonella Jumbo-Phage pSal-SNUABM-04

Viruses ◽  
2020 ◽  
Vol 13 (1) ◽  
pp. 27
Author(s):  
Jun Kwon ◽  
Sang Guen Kim ◽  
Hyoun Joong Kim ◽  
Sib Sankar Giri ◽  
Sang Wha Kim ◽  
...  
Keyword(s):  
Morphological Traits ◽  
Open Reading Frames ◽  
Genome Comparison ◽  
The Novel ◽  
Promising Alternative ◽  
Isolation And Characterization ◽  
Global Issue ◽  
Reading Frames ◽  
Predicted Function

The increasing emergence of antimicrobial resistance has become a global issue. Therefore, many researchers have attempted to develop alternative antibiotics. One promising alternative is bacteriophage. In this study, we focused on a jumbo-phage infecting Salmonella isolated from exotic pet markets. Using a Salmonella strain isolated from reptiles as a host, we isolated and characterized the novel jumbo-bacteriophage pSal-SNUABM-04. This phage was investigated in terms of its morphology, host infectivity, growth and lysis kinetics, and genome. The phage was classified as Myoviridae based on its morphological traits and showed a comparatively wide host range. The lysis efficacy test showed that the phage can inhibit bacterial growth in the planktonic state. Genetic analysis revealed that the phage possesses a 239,626-base pair genome with 280 putative open reading frames, 76 of which have a predicted function and 195 of which have none. By genome comparison with other jumbo phages, the phage was designated as a novel member of Machinavirus composed of Erwnina phages.

scholarly journals IoT Botnet Anomaly Detection Using Unsupervised Deep Learning

Electronics ◽  
2021 ◽  
Vol 10 (16) ◽  
pp. 1876
Author(s):  
Ioana Apostol ◽  
Marius Preda ◽  
Constantin Nila ◽  
Ion Bica
Keyword(s):  
Deep Learning ◽  
Detection System ◽  
False Positive Rate ◽  
Empirical Evaluation ◽  
Learning Approaches ◽  
Promising Alternative ◽  
Positive Rate ◽  
Unsupervised Deep Learning ◽  
Attack Surface ◽  
Iot Devices

The Internet of Things has become a cutting-edge technology that is continuously evolving in size, connectivity, and applicability. This ecosystem makes its presence felt in every aspect of our lives, along with all other emerging technologies. Unfortunately, despite the significant benefits brought by the IoT, the increased attack surface built upon it has become more critical than ever. Devices have limited resources and are not typically created with security features. Lately, a trend of botnet threats transitioning to the IoT environment has been observed, and an army of infected IoT devices can expand quickly and be used for effective attacks. Therefore, identifying proper solutions for securing IoT systems is currently an important and challenging research topic. Machine learning-based approaches are a promising alternative, allowing the identification of abnormal behaviors and the detection of attacks. This paper proposes an anomaly-based detection solution that uses unsupervised deep learning techniques to identify IoT botnet activities. An empirical evaluation of the proposed method is conducted on both balanced and unbalanced datasets to assess its threat detection capability. False-positive rate reduction and its impact on the detection system are also analyzed. Furthermore, a comparison with other unsupervised learning approaches is included. The experimental results reveal the performance of the proposed detection method.

A Novel Processing Route for the Fabrication of Monolithic and Composite Silicon Nitride

1992 ◽  
Vol 287 ◽  
Author(s):  
R. V. Raman ◽  
S. V. Rele
Keyword(s):  
Volume Fraction ◽  
Hot Isostatic Pressing ◽  
Thermal Exposure ◽  
Processing Route ◽  
Promising Alternative ◽  
Α Phase ◽  
Key Issues ◽  
Novel Processing ◽  
Composite Silicon

ABSTRACTCurrent hot isostatic consolidation methodology used for the fabrication of complex-shaped Si3N4-based components requires the use of an expensive glass encapsulation technique and extended thermal exposure (in hours) of the specimen. An alternative consolidation approach involving the use of solid pressure transmitting media under high pressure, has enabled the consolidation of Si3N4 alloys without the need for glass encapsulation.Characterization of microstructures and mechanical properties of this (MOR, fracture toughness) material has been carried out and will be presented. It has been noted that in Si 3N4/8%Y2O3-4%Al2O3 composition, consolidated using this approach, a significantly larger volume fraction of α phase has been retained compared with typically observed conversion in α⇒ β in hot isostatically pressed material or sintered material.Key issues for addressing densification and microstructure control using this process are presented. This rapid consolidation approach appears to be a promising alternative to hot isostatic pressing for the fabrication of complex-shaped Si3N4 components.

Effects of Thickness on Resistance Switching Properties of ZnMn2O4 Films Deposited by Magnetron Sputtering

2014 ◽  
Vol 941-944 ◽  
pp. 1275-1278
Author(s):  
Hua Wang ◽  
Zhi Da Li ◽  
Ji Wen Xu ◽  
Yu Pei Zhang ◽  
Ling Yang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Random Access ◽  
Random Access Memory ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Si Substrate ◽  
Access Memory ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Resistance Random Access Memory

ZnMn2O4films for resistance random access memory (RRAM) were fabricated on p-Si substrate by magnetron sputtering. The effects of thickness onI-Vcharacteristics, resistance switching behavior and endurance characteristics of ZnMn2O4films were investigated. The ZnMn2O4films with a structure of Ag/ZnMn2O4/p-Si exhibit bipolar resistive switching behavior. With the increase of thickness of ZnMn2O4films from 0.83μm to 2.3μm, both theVONand the number of stable repetition switching cycle increase, but theRHRS/RLRSratio decrease, which indicated that the ZnMn2O4films with a thickness of 0.83μm has the biggestRHRS/RLRSratio and the lowestVONandVOFF, but the worst endurance characteristics.

scholarly journals Characterization of coded random access with compressive sensing based multi-user detection

2014 ◽  
Author(s):  
Yalei Ji ◽  
Cedomir Stefanovic ◽  
Carsten Bockelmann ◽  
Armin Dekorsy ◽  
Petar Popovski
Keyword(s):  
Compressive Sensing ◽  
Random Access
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