scholarly journals A 2.77 μW Ambient RF Energy Harvesting Using DTMOS Cross-Coupled Rectifier on 65 nm SOTB and Wide Bandwidth System Design

Electronics ◽  
2019 ◽  
Vol 8 (10) ◽  
pp. 1173
Author(s):  
Thuy-Linh Nguyen ◽  
Yasuo Sato ◽  
Koichiro Ishibashi
Keyword(s):  
Energy Harvesting ◽  
Orthogonal Frequency Division Multiplexing ◽  
Input Power ◽  
Potential Candidate ◽  
Wide Bandwidth ◽  
Rf Energy Harvesting ◽  
Ambient Environment ◽  
Rf Energy ◽  
Rf Signal ◽  
To Receive

This paper proposes a structure of the μ W RF energy harvesting (RFEH) system that is used for scavenging RF power from an ambient environment. A cross-coupled rectifier (CCR) with floating sub-circuit structures was utilized in the application of dynamic threshold MOSFET (DTMOS) on Silicon on Thin Buried Oxide (SOTB) to obtain high drain conductance of the MOSFET. A wide bandwidth matching between antenna and rectifier was designed to receive energy from the orthogonal frequency division multiplexing (OFDM) RF signal with a bandwidth of 15 MHz at 950 MHz band. Realistic measurements with a 950 MHz LTE mobile phone signal from the ambient environment indicate that an average DC output power of 2.77 μ W is harvested with the proposed RFEH system at a level of −19.4 dBm input power. The proposed RFEH system exhibits the best performance when compared to that of other realistic RFEH systems and is a potential candidate for battery-less Internet of Things (IoT) applications.

scholarly journals RF Energy Harvesting using Cross-couple Rectifier and DTMOS on SOTB with Phase Effect of Paired RF Inputs

2020 ◽  
Vol 18 (2) ◽  
pp. 170-178
Author(s):  
Thuy-Linh Nguyen ◽  
Shiho Takahashi ◽  
Van-Trung Nguyen ◽  
Yasuo Sato ◽  
Koichiro Ishibashi
Keyword(s):  
Energy Harvesting ◽  
Phase Difference ◽  
Output Voltage ◽  
Cmos Technology ◽  
Input Power ◽  
Phase Changes ◽  
Rf Energy Harvesting ◽  
Input Signals ◽  
Rf Energy ◽  
Rf Signal

In this paper, the design and evaluations of a cross-couple rectifier (CCR) with floating sub-circuit using Dynamic Threshold MOSFET (DTMOS) for RF energy harvesting is presented. The circuit is fabricated using 65nm Silicon on Thin Buried Box (SOTB) CMOS technology. The measurement result shows that circuit exceeds 1000 mV DC output at -14 dBm input power and obtains 48 % power conversion efficiency (PCE) at a level of -10 dBm input power. The proposed circuit generated 0.9 μW DC output power at a level of -21 dBm input power which equivalent to 10.6 % PCE when harvesting the 950 MHz LTE signal in the ambient environment. The study also indicates the effect of phase difference between the two RF input signals on the DC output voltage in CMOS CCR. The DC output voltage depends on the phase of the two RF input signals and reaches a maximum when the phase difference between the two RF signals is π. Experimental results demonstrate that the output voltage changes from 950 mV to -100 mV when the phase difference varies from π to 0 at an RF input power of -10 dBm. When the rectifier receives an RF signal from the environment at an input power of -21 dBm, the DC output voltage changes from 300 mV to -50 mV when the phase changes from π to 0.

scholarly journals Simple Adaptive Rectifier with High Efficiency over a Range of 21 dBm Input Power for RF Energy Harvesting Applications

2021 ◽  
pp. 8-15
Author(s):  
Eman M. Abdelhady ◽  
◽  
Hala M. Abdelkader ◽  
Amr A. Al-Awamry
Keyword(s):  
Energy Harvesting ◽  
Low Power ◽  
Breakdown Voltage ◽  
Adaptive Design ◽  
High Efficiency ◽  
Power Level ◽  
Input Power ◽  
Rf Energy Harvesting ◽  
High Input Power ◽  
Rf Energy

This paper presents a novel simple adaptive and efficient rectifier for Radio Frequency (RF) energy harvesting applications. Traditional rectifiers have maximum RF-DC Power Conversion Efficiency (PCE) over a narrow range of RF input power due to diode breakdown voltage restrictions. The proposed adaptive design helps to extend the PCE over a wider range of RF input power at 2.45GHz using a simple design. Two alternative paths arecontrolled depending on the RF input power level. Low input power levels activate the first path connected to a single rectifier; low power levels make the diode operate below its breakdown voltage and therefore avoiding PCE degradation. High input power levels activate the second path dividing it into three rectifiers. This keeps input power at each rectifier at a low power level to avoid exceeding the diode break down voltage. Simulated PCE of this work is kept above 50% over a range of 21.4 dBm input power from -0.8dBm to 20.6dBm.

scholarly journals An Efficient Reconfigurable RF-DC Converter With Wide Input Power Range for RF Energy Harvesting

IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 79310-79318 ◽  
Author(s):  
Danial Khan ◽  
Seong Jin Oh ◽  
Khuram Shehzad ◽  
Muhammad Basim ◽  
Deeksha Verma ◽  
...  
Keyword(s):  
Energy Harvesting ◽  
Input Power ◽  
Rf Energy Harvesting ◽  
Rf Energy

scholarly journals Design and Implementation of Wearable Microstrip Fabric Antenna for RF Energy Harvesting

2021 ◽  
Author(s):  
T. Rubesh kumar ◽  
Moorthi Madhavan
Keyword(s):  
Energy Harvesting ◽  
Base Station ◽  
Radiation Efficiency ◽  
Antenna Design ◽  
Wave Band ◽  
Wide Bandwidth ◽  
Rf Energy Harvesting ◽  
Dielectric Characterization ◽  
Rf Energy ◽  
Promising Source

Abstract In 5G network, the key parts are millimeter wave band (mmWave band) involving 26 GHz & 28 GHz which aims to solve issues related to traffic using its wide bandwidth. Features of 5G such as transmitters with high directivity, wide bandwidth and base station with high density project it as a promising source of RF energy harvesting. In order to harvest RF power from the full spectrum in an efficient way, broadband antenna design is demanded. This paper focuses on designing wearable microstrip fabric antenna operating in 5G spectrum at 26 GHz & 28 GHz for RF energy harvesting. Impedance bandwidth of the antenna is about 20 GHz to 30 GHz exhibiting omnidirectional pattern of radiation with on-body gain with a peak value of 7 dB making it suitable for harvesting RF energy. On body radiation efficiency & off body radiation efficiency are obtained as 40% and 60% when operating in the frequency range of 24 GHz & 30 GHz. In mmWave band, dielectric characterization of a two line fabric substrate microstrip antenna is obtained. Fabrication of the antenna is done using polyimide copper laminates etched with ultra thin size 150 µm on a woven polyester substrate of 310 µm thickness. Improved gain and stable bandwidth are achieved from the proposed antenna design when demonstrated in human proximity providing high robustness.

scholarly journals A Self Threshold Voltage Compensated Rectifier for RF Energy Harvesting using 45nm CMOS Technology

2021 ◽  
Vol 20 ◽  
pp. 244-248
Author(s):  
Chinmoy Bharali ◽  
Manash Pratim Sarma
Keyword(s):  
Energy Harvesting ◽  
Threshold Voltage ◽  
Rise Time ◽  
Input Power ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Rf Energy Harvesting ◽  
Good Efficiency ◽  
Energy Harvesting System ◽  
Rf Energy

A high frequency rectifier is the core of a RF energy harvesting system. It should offer a very good efficiency at low input power levels and to obtain that compensation of threshold voltage is a very important aspect. A threshold compensation scheme for MOSFETS for RF rectifier applicable in RF energy harvesting system is presented in this paper. The switching of the MOSFET is improved with overall enhancement of output rise time of the system. The design emphasis is to have a simplified circuit without the requirement of any external source so as to achieve self-sustainability in the true sense. The rectifier circuit is derived from the basic Dickson charge pump model and is evaluated using 45nm CMOS process. The design has utilized Metal Oxide Semiconductor Field Effect Transistor instead of basic diodes which ensures low power along with fabrication feasibility. The maximum measured PCE of the design is obtained to be 33% at 4dBm input power level at 500Mhz frequency with 1 Kilo Ohm load resistance. The output transient response rise time has been measured to be 85ns at 500MHz and 50.10ns at 1Ghz.

Sign in / Sign up

Export Citation Format

Share Document