A 900 MHz RF energy harvesting system in 40 nm CMOS technology with efficiency peaking at 47% and higher than 30% over a 22dB wide input power range

2017 ◽  
Author(s):  
Jialue Wang ◽  
Yang Jiang ◽  
Johan Dijkhuis ◽  
Guido Dolmans ◽  
Hao Gao ◽  
...  
Keyword(s):  
Energy Harvesting ◽  
Cmos Technology ◽  
Input Power ◽  
Rf Energy Harvesting ◽  
Energy Harvesting System ◽  
Rf Energy

scholarly journals A Self Threshold Voltage Compensated Rectifier for RF Energy Harvesting using 45nm CMOS Technology

2021 ◽  
Vol 20 ◽  
pp. 244-248
Author(s):  
Chinmoy Bharali ◽  
Manash Pratim Sarma
Keyword(s):  
Energy Harvesting ◽  
Threshold Voltage ◽  
Rise Time ◽  
Input Power ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Rf Energy Harvesting ◽  
Good Efficiency ◽  
Energy Harvesting System ◽  
Rf Energy

A high frequency rectifier is the core of a RF energy harvesting system. It should offer a very good efficiency at low input power levels and to obtain that compensation of threshold voltage is a very important aspect. A threshold compensation scheme for MOSFETS for RF rectifier applicable in RF energy harvesting system is presented in this paper. The switching of the MOSFET is improved with overall enhancement of output rise time of the system. The design emphasis is to have a simplified circuit without the requirement of any external source so as to achieve self-sustainability in the true sense. The rectifier circuit is derived from the basic Dickson charge pump model and is evaluated using 45nm CMOS process. The design has utilized Metal Oxide Semiconductor Field Effect Transistor instead of basic diodes which ensures low power along with fabrication feasibility. The maximum measured PCE of the design is obtained to be 33% at 4dBm input power level at 500Mhz frequency with 1 Kilo Ohm load resistance. The output transient response rise time has been measured to be 85ns at 500MHz and 50.10ns at 1Ghz.

scholarly journals RF Energy Harvesting using Cross-couple Rectifier and DTMOS on SOTB with Phase Effect of Paired RF Inputs

2020 ◽  
Vol 18 (2) ◽  
pp. 170-178
Author(s):  
Thuy-Linh Nguyen ◽  
Shiho Takahashi ◽  
Van-Trung Nguyen ◽  
Yasuo Sato ◽  
Koichiro Ishibashi
Keyword(s):  
Energy Harvesting ◽  
Phase Difference ◽  
Output Voltage ◽  
Cmos Technology ◽  
Input Power ◽  
Phase Changes ◽  
Rf Energy Harvesting ◽  
Input Signals ◽  
Rf Energy ◽  
Rf Signal

In this paper, the design and evaluations of a cross-couple rectifier (CCR) with floating sub-circuit using Dynamic Threshold MOSFET (DTMOS) for RF energy harvesting is presented. The circuit is fabricated using 65nm Silicon on Thin Buried Box (SOTB) CMOS technology. The measurement result shows that circuit exceeds 1000 mV DC output at -14 dBm input power and obtains 48 % power conversion efficiency (PCE) at a level of -10 dBm input power. The proposed circuit generated 0.9 μW DC output power at a level of -21 dBm input power which equivalent to 10.6 % PCE when harvesting the 950 MHz LTE signal in the ambient environment. The study also indicates the effect of phase difference between the two RF input signals on the DC output voltage in CMOS CCR. The DC output voltage depends on the phase of the two RF input signals and reaches a maximum when the phase difference between the two RF signals is π. Experimental results demonstrate that the output voltage changes from 950 mV to -100 mV when the phase difference varies from π to 0 at an RF input power of -10 dBm. When the rectifier receives an RF signal from the environment at an input power of -21 dBm, the DC output voltage changes from 300 mV to -50 mV when the phase changes from π to 0.

Design of an enhanced RF energy harvesting system for wireless sensors

2013 ◽  
Author(s):  
Ahmed Al-Khayari ◽  
Hamed Al-Khayari ◽  
Sulaiman Al-Nabhani ◽  
Mohammed M. Bait-Suwailam ◽  
Zia Nadir
Keyword(s):  
Energy Harvesting ◽  
Wireless Sensors ◽  
Rf Energy Harvesting ◽  
Energy Harvesting System ◽  
Rf Energy

scholarly journals DESIGN OF RF ENERGY HARVESTING SYSTEM FOR ENERGIZING LOW POWER DEVICES

2012 ◽  
Vol 132 ◽  
pp. 49-69 ◽  
Author(s):  
Norashidah Md. Din ◽  
Chandan Kumar Chakrabarty ◽  
Aima Bin Ismail ◽  
Kavuri Kasi Annapurna Devi ◽  
Wan-Yu Chen
Keyword(s):  
Energy Harvesting ◽  
Low Power ◽  
Power Devices ◽  
Rf Energy Harvesting ◽  
Energy Harvesting System ◽  
Rf Energy

scholarly journals A 2.77 μW Ambient RF Energy Harvesting Using DTMOS Cross-Coupled Rectifier on 65 nm SOTB and Wide Bandwidth System Design

Electronics ◽  
2019 ◽  
Vol 8 (10) ◽  
pp. 1173
Author(s):  
Thuy-Linh Nguyen ◽  
Yasuo Sato ◽  
Koichiro Ishibashi
Keyword(s):  
Energy Harvesting ◽  
Orthogonal Frequency Division Multiplexing ◽  
Input Power ◽  
Potential Candidate ◽  
Wide Bandwidth ◽  
Rf Energy Harvesting ◽  
Ambient Environment ◽  
Rf Energy ◽  
Rf Signal ◽  
To Receive

This paper proposes a structure of the μ W RF energy harvesting (RFEH) system that is used for scavenging RF power from an ambient environment. A cross-coupled rectifier (CCR) with floating sub-circuit structures was utilized in the application of dynamic threshold MOSFET (DTMOS) on Silicon on Thin Buried Oxide (SOTB) to obtain high drain conductance of the MOSFET. A wide bandwidth matching between antenna and rectifier was designed to receive energy from the orthogonal frequency division multiplexing (OFDM) RF signal with a bandwidth of 15 MHz at 950 MHz band. Realistic measurements with a 950 MHz LTE mobile phone signal from the ambient environment indicate that an average DC output power of 2.77 μ W is harvested with the proposed RFEH system at a level of −19.4 dBm input power. The proposed RFEH system exhibits the best performance when compared to that of other realistic RFEH systems and is a potential candidate for battery-less Internet of Things (IoT) applications.

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