scholarly journals Compact and Low Crosstalk Echelle Grating Demultiplexer on Silicon-On-Insulator Technology

Electronics ◽  
2019 ◽  
Vol 8 (6) ◽  
pp. 687 ◽  
Author(s):  
Daniele Melati ◽  
Pierre G. Verly ◽  
André Delâge ◽  
Shurui Wang ◽  
Jean Lapointe ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Channel Spacing ◽  
Wavelength Demultiplexer ◽  
Echelle Grating ◽  
Small Footprint ◽  
Silicon On Insulator Technology ◽  
Insertion Losses

We report on the design of an ultra-compact integrated wavelength demultiplexer in echelle configuration for the optical O-band realized on silicon-on-insulator technology. The device has four channels with channel spacing of 800 GHz and a small footprint of 260 × 83 μm2. Channel crosstalk lower than −28 dB across the four channels is experimentally demonstrated along with insertion losses of −1.5 dB.

TEM study of buried cobalt disilicide layers formed by ion implantation: Identification of cobalt monosilicide inclusions

1990 ◽  
Vol 48 (4) ◽  
pp. 576-577
Author(s):  
A. De Veirman ◽  
J. Van Landuyt ◽  
K.J. Reeson ◽  
R. Gwilliam ◽  
C. Jeynes ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Annealing Treatment ◽  
Silicon On Insulator ◽  
High Dose ◽  
Nitrogen Flow ◽  
Cobalt Disilicide ◽  
Transmission Electron ◽  
Beam Heating ◽  
Co Concentration ◽  
Silicon On Insulator Technology

In analogy to the formation of SIMOX (Separation by IMplanted OXygen) material which is presently the most promising silicon-on-insulator technology, high-dose ion implantation of cobalt in silicon is used to synthesise buried CoSi2 layers. So far, for high-dose ion implantation of Co in Si, only formation of CoSi2 is reported. In this paper it will be shown that CoSi inclusions occur when the stoichiometric Co concentration is exceeded at the peak of the Co distribution. 350 keV Co+ ions are implanted into (001) Si wafers to doses of 2, 4 and 7×l017 per cm2. During the implantation the wafer is kept at ≈ 550°C, using beam heating. The subsequent annealing treatment was performed in a conventional nitrogen flow furnace at 1000°C for 5 to 30 minutes (FA) or in a dual graphite strip annealer where isochronal 5s anneals at temperatures between 800°C and 1200°C (RTA) were performed. The implanted samples have been studied by means of Rutherford Backscattering Spectroscopy (RBS) and cross-section Transmission Electron Microscopy (XTEM).

scholarly journals Optimal Design of an Ultrasmall SOI-Based 1 × 8 Flat-Top AWG by Using an MMI

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Hongqiang Li ◽  
Yaoting Bai ◽  
Xiaye Dong ◽  
Enbang Li ◽  
Yang Li ◽  
...  
Keyword(s):  
Insertion Loss ◽  
Spectral Response ◽  
Beam Propagation Method ◽  
Silicon On Insulator ◽  
Optimized Design ◽  
Arrayed Waveguide Grating ◽  
Channel Spacing ◽  
Waveguide Grating ◽  
Passband Width ◽  
Arrayed Waveguide

Four methods based on a multimode interference (MMI) structure are optimally designed to flatten the spectral response of silicon-on-insulator- (SOI-) based arrayed-waveguide grating (AWG) applied in a demodulation integration microsystem. In the design for each method, SOI is selected as the material, the beam propagation method is used, and the performances (including the 3 dB passband width, the crosstalk, and the insertion loss) of the flat-top AWG are studied. Moreover, the output spectrum responses of AWGs with or without a flattened structure are compared. The results show that low insertion loss, crosstalk, and a flat and efficient spectral response are simultaneously achieved for each kind of structure. By comparing the four designs, the design that combines a tapered MMI with tapered input/output waveguides, which has not been previously reported, was shown to yield better results than others. The optimized design reduced crosstalk to approximately −21.9 dB and had an insertion loss of −4.36 dB and a 3 dB passband width, that is, approximately 65% of the channel spacing.

Advantages of Faceted P-Raised Source/Drain in Fully Depleted Silicon on Insulator Technology

2018 ◽  
Vol 86 (7) ◽  
pp. 199-206 ◽  
Author(s):  
Ömür Işıl Aydin ◽  
Judson Robert Holt ◽  
Cyrille Le Royer ◽  
Laks Vanamurthy ◽  
Thomas Feudel ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Fully Depleted ◽  
Silicon On Insulator Technology

scholarly journals Design of an On-Chip Plasmonic Modulator Based on Hybrid Orthogonal Junctions Using Vanadium Dioxide

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2507
Author(s):  
Gregory Beti Tanyi ◽  
Miao Sun ◽  
Christina Lim ◽  
Ranjith Rajasekharan Unnithan
Keyword(s):  
Vanadium Dioxide ◽  
Modulation Depth ◽  
Large Change ◽  
Silicon On Insulator ◽  
Nanometer Scale ◽  
High Modulation ◽  
Orthogonal Geometry ◽  
Potential Applications ◽  
On Chip ◽  
Insertion Losses

We present the design of a plasmonic modulator based on hybrid orthogonal silver junctions using vanadium dioxide as the modulating material on a silicon-on-insulator. The modulator has an ultra-compact footprint of 1.8 μm × 1 μm with a 100 nm × 100 nm modulating section based on the hybrid orthogonal geometry. The modulator takes advantage of the large change in the refractive index of vanadium dioxide during its phase transition to achieve a high modulation depth of 46.89 dB/μm. The simulated device has potential applications in the development of next generation high frequency photonic modulators for optical communications which require nanometer scale footprints, large modulation depth and small insertion losses.

scholarly journals Indication of the Coronavirus Model Using a Nanowire Biosensor

Proceedings ◽  
2020 ◽  
Vol 60 (1) ◽  
pp. 50
Author(s):  
Vladimir Generalov ◽  
Olga Naumova ◽  
Dmitry Shcherbakov ◽  
Alexander Safatov ◽  
Boris Zaitsev ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Negative Charge ◽  
Positive Charge ◽  
Silicon On Insulator ◽  
Nanowire Surface ◽  
Before And After ◽  
Effect Transistor ◽  
Current Value ◽  
Silicon On Insulator Technology

The presented results indicate virus-like particles of the coronavirus (CVP) using a nanowire (NW) biosensor based on silicon-on-insulator technology. In the experiment, we used suspensions of CVP and of specific antibodies to the virus. Measurements of the current value of the field-effect transistor before and after the introduction of the CVP on the surface of the nanowire were performed. Results showed antibody + CVP complexes on the phase section with the surface of the nanowire modulate the current of the field-effect transistor; CVP has an electrically positive charge on the phase section “nanowire surface-viral suspension»; antibody + CVP complexes have an electrically negative charge on the phase section “nanowire surface-viral suspension”; the sensitivity of the biosensor is made up of 10−18 M; the time display was 200–300 s.

A review of the mechanical stressors efficiency applied to the ultra-thin body & buried oxide fully depleted silicon on insulator technology

2016 ◽  
Vol 117 ◽  
pp. 100-116 ◽  
Author(s):  
Pierre Morin ◽  
Sylvain Maitrejean ◽  
Frederic Allibert ◽  
Emmanuel Augendre ◽  
Qing Liu ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Thin Body ◽  
Fully Depleted ◽  
Buried Oxide ◽  
Silicon On Insulator Technology
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